Intersil RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Datasheet
RFD12N06RLE, RFD12N06RLESM,
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j
/
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RFP12N06RLE
July 1999 File Number 2407.4Data Sheet
[ /Title
(RFD1
2N06R
LE,
RFD12
N06RL
ESM,
RFP12
N06RL
E)
Sub-
ect
(12A,
60V,
0.135
Ohm,
NChannel,
Logic
Level,
Power
MOSFETs)
Autho
r ()
Keywords
(Intersil
Corporation,
NChannel,
Logic
Level,
Power
MOS-
12A, 60V, 0.135 Ohm, N-Channel, Logic
Level, Power MOSFETs
These N-Channel logic level ESD protected power
MOSFETs are manufactured using the MegaFET process.
This process, which uses featuresizesapproachingthoseof
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor drivers,
relay drivers, and emitter switches for bipolar transistors.
This performance is accomplished through a special gate
oxide design which provides full rated conductance at gate
biases in the 3V to 5V range, thereby facilitating true on-off
power control directly from logic circuit supply voltages.
Formerly developmental type TA09861.
Ordering Information
PART NUMBER PACKAGE BRAND
RFD12N06RLE TO-251AA 12N6LE
RFD12N06RLESM TO-252AA 12N6LE
RFP12N06RLE TO-220AB 12N06RLE
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain theTO-252AAvariant in tape and reel, i.e., RFD12N06RLESM9A.
Packaging
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
(FLANGE)
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-220AB
Features
• 12A, 60V
•r
• Electrostatic Discharge Protected
• UIS Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.135Ω
DS(ON)
Components to PC Boards”
Symbol
D
G
S
DRAIN
GATE
SOURCE
SOURCE
DRAIN
GATE
(FLANGE)
6-12
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFD12N06RLE,
RFD12N06RLESM,
RFP12N06RLE UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
DM
GS
D
60 V
60 V
12
26
-5 to10 V
40 W
A
A
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32 W/oC
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Electrostatic Discharge Rating ESD, MIL-STD-883, Category B(2)
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
Refer to UIS SOA Curve
2kV
-55 to 150
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
DS(ON)ID
DSSID
GS(TH)VGS
DSS
GSS
= 250µA, VGS = 0V 60 - - V
= VDS, ID = 250µA1-2V
VDS = Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
DSS,VGS
= 0V, TC= 150oC- - 25 µA
VGS = -5 to 10V - - ±10 µA
= 12A, VGS = 5V (Figures 7, 8) - - 0.135 Ω
ID = 12A, VGS = 4V - - 0.160 Ω
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
(OFF)
g(TOT)VGS
Gate Charge at 5V Q
Threshold Gate Charge Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
(ON)
g(TH)VGS
VDD = 30V, I
VGS= 5V, (Figures 15, 16)
r
≈ 6A, R
D
= 5Ω, RGS = 6.25Ω,
L
- - 60 ns
-12- ns
-20- ns
-24- ns
f
-12- ns
- - 60 ns
= 0V to 10V VDD = 48V, ID = 12A,
VGS = 0V to 5V - - 20 nC
g(5)
= 0V to 1V - - 1.5 nC
θJC
TO-251AA and TO-252AA - - 100
θJA
RL = 4Ω,
I
= 0.25mA
G(REF)
(Figures 17, 18)
- - 40 nC
- - 3.125oC/W
TO-220AB - - 62
o
o
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
SD
Reverse Recovery Time t
NOTES:
2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
6-13
ISD = 12A - - 1.2 V
ISD = 12A, dISD/dt = 100A/µs - - 200 ns
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