Intersil RFD10P03L, RFD10P03LSM, RFP10P03L Datasheet
RFD10P03L, RFD10P03LSM, RFP10P03L
Data Sheet July 1999 File Number
10A, 30V, 0.200 Ohm, Logic Level,
P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49205.
Ordering Information
P AR T NUMBER P ACKAGE BRAND
RFD10P03L TO-251AA 10P03L
RFD10P03LSM TO-252AA 10P03L
RFP10P03L TO-220AB F10P03L
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252AAvariant in tape andreel,i.e.RFD10P03LSM9A..
Features
• 10A, 30V
DS(ON)
= 0.200Ω
•r
• Temperature Compensating PSPICE
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
C Operating Temperature
• 175
Symbol
D
G
S
®
Model
3515.2
Packaging
DRAIN (FLANGE)
JEDEC TO-251AA JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
7-3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFD10P03L, RFD10P03LSM, RFP10P03L
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specifie
C
RFD10P03L, RFD10P03LSM,
RFP10P03L UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
= 20KΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
-30 V
-30 V
±10 V
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
J
STG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
DM
AS
D
10
See Figure 5
Refer to UIS Curve
D
65
0.43
-55 to 175
L
300
A
W
W/oC
o
C
o
C
(0.063in (1.6mm) from case for 10s)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ= 25oC to 150oC
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
DSS
GS(TH)
DSS
ID = 250µA, VGS = 0V (Figure 11) -30 - - V
VGS = VDS, ID = 250µA (Figure 12) -1 - -2 V
VDS = -30V, TC = 25oC---1µA
VGS = 0V TC = 150oC - - -50 µA
Gate to Source Leakage Current I
Drain to Source On Resistance
r
DS(ON)ID
(Note 1)
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)
Gate Charge at -5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R
GSS
ON
r
f
OFF
g(-5)
g(TH)
ISS
OSS
RSS
θJC
θJA
VGS = ±10V - - ±100 nA
= 10A, VGS = -5V (Figures 9, 10) - - 0.200 Ω
ID = 10A, VGS = -4.5V (Figures 9, 10) 0.220 Ω
VDD = 15V, ID≅ 10A, RL = 1.5Ω,
RGS = 5Ω, VGS = -5V
(Figure 13)
- - 100 ns
-15-ns
-50-ns
-35-ns
-20-ns
- - 80 ns
VGS = 0 to -10V VDD = -24V, ID≅ 10A,
VGS = 0 to -5V - 13 16 nC
VGS = 0 to -1V - 1.2 1.5 nC
RL = 2.4Ω
I
= -0.25mA
g(REF)
(Figure 14)
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 15)
-2530nC
- 1035 - pF
- 340 - pF
-35-pF
- - 2.30
RFD10P03L, RFD10P03LSM - - 100
RFP10P03L 80
o
o
o
C/W
C/W
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Forward Voltage V
Reverse Recovery Time t
NOTE:
2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.
7-4
SD
rr
ISD = -10A - - -1.5 V
ISD = -10A, dISD/dt = -100A/µs--75ns
RFD10P03L, RFD10P03LSM, RFP10P03L
Typical Performance Curves
Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
125
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZEDPOWER DISSIPATION vs CASE
TEMPERATURE
2.0
1.0
0.5
150
-12
-10
-8
-6
-4
, DRAIN CURRENT (A)
D
I
-2
0
25 50 75 100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUMCONTINUOUSDRAIN CURRENT vs
CASE TEMPERATURE
175
0.2
0.1
0.1
0.05
0.02
0.01
, NORMALIZED THERMAL IMPEDANCE
θJC
Z
0.01
10
SINGLE PULSE
-5
-100
-10
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
-1
-1 -10
DS(ON)
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
NOTES: DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
-4
10
-3
10
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-100
VGS = -10V
VGS = -5V
-10
, PEAK CURRENT CAPABILITY (A)
DM
I
-5
-5
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-4
10
-3
10
t, PULSE WIDTH (s)
V
DSS
MAX = -30V
TJ = MAX RATED
= 25oC
T
C
100µs
1ms
10ms
100ms
DC
-100
P
DM
t
1
t
2
2
xR
θJC
+ T
C
10
θJC
0
10
TC = 25oC
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175 TC–
II
=
----------------------- -
25
150
-2
10
-1
10
0
10
1
1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
7-5
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