Intersil RF3S49092SM, RF3V49092 Datasheet

RF3V49092, RF3S49092SM

Data Sheet November 1999 File Number 4600.1

20A/10A, 12V, 0.060/0.140 Ohm, Logic
Level, Complementary Power MOSFET

These complementary power MOSFETs are manufactured
using an advanced MegaFET process. This process, which
uses feature sizes approaching those of LSI integrated
circuits, gives optimum utilization of silicon, resulting in
outstanding performance. It is designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V to 5V range, thereby facilitating true
on-off power control directly from logic level (5V) integrated
circuits.

Formerly developmental type TA49092.

Ordering Information

PART NUMBER PACKAGE BRAND

RF3V49092 TS-001AA F3V49092
RF3S49092SM MO-169AB F3S49092

NOTE: Whenordering, use the entire part number.Forordering the
MO-169ABintape and reel, add thesuffix9A to the part number,i.e.,
RF3S49092SM9A.

Features

• 20A, 12V (N-Channel)
10A, 12V (P-Channel)

•r
r

• Temperature Compensating PSPICE

= 0.060Ω (N-Channel)

DS(ON)

= 0.140Ω (P-Channel)

DS(ON)

®

Model

• On-Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Symbol

S2
G2

D1

G1
S1

Packaging

JEDEC TS-001AA (ALTERNATE) JEDEC MO-169AB

S1

G1

D

S2

G2

G2

S2

D

G1

S1

4-30

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

1-888-INTERSIL or 321-727-9207

| Copyright © Intersil Corporation 1999

RF3V49092, RF3S49092SM

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

C

N-CHANNEL P-CHANNEL UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS= 20kΩ, Note 1). . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

12 -12 V
12 -12 V

±10 ±10 V

Drain Current

Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed (Figures 5, 26) . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating (Figures 6, 27). . . . . . . . . . . . .E

DM

AS

D

Refer to Peak Current Curve

20

10

Refer to Peak Current Curve

Refer to UIS Curve Refer to UIS Curve

A

Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

50

0.33

50

0.33

-55 to 175 -55 to 175

300
260

300
260

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications (N-Channel) T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

JC

θ

JA

θ

= 250µA, VGS = 0V, (Figure 13) 12 - - V

= VDS, ID = 250µA, (Figure 12) 1 - - V

VDS = 12V,
VGS = 0V

TC = 25oC--1µA
TC = 150oC--50µA

VGS = ±10V - - ±100 nA

= 20A, VGS = 5V, (Figure 9, 11) - - 0.060 Ω

VDD = 6V, ID≈ 20A, RL = 0.24Ω,
VGS= 5V, RGS = 25Ω
(Figure 10)

- - 100 ns

-18-ns

-60-ns

-50-ns

-60-ns

- - 140 ns

= 0V to 10V VDD = 9.6V,
VGS = 0V to 5V - 12 15 nC
VGS = 0V to 1V - 0.9 1.2 nC

ID = 20A,
RL = 0.42Ω
(Figure 15)

VDS = 10V, VGS = 0V, f = 1MHz
(Figure 14)

-2025nC

- 750 - pF

- 700 - pF

- 275 - pF

- - 3.00

TS-001AA, and MO-169AB - - 62

o
o

C/W
C/W

N-Channel Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Voltage V
Reverse Recovery Time t

4-31

SD

ISD = 20A - - 1.5 V
ISD = 20A, dISD/dt = 100A/µs - - 100 ns

rr

RF3V49092, RF3S49092SM

Electrical Specifications (P-Channel) T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r
Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at -5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DS(ON)ID

d(OFF)

= 25oC, Unless Otherwise Specified

C

DSSID

GS(TH)VGS

DSS

= 250µA, VGS = 0V, (Figure 34) -12 - - V

= VDS, ID = 250µA, (Figure 33) -1 - - V
VDS = -12V,

VGS = 0V

GSS

VGS = ±10V - - ±100 nA

= 10A, VGS = -5V, (Figures 30, 32) - - 0.140 Ω

ON

VDD = -6V, ID≈ 10A, RL = 0.62Ω,
VGS= -5V, RGS = 25Ω

d(ON)

OFF

g(TOT)VGS

g(-5)

g(TH)

ISS

(Figure 31)

r

f

= 0V to -10V VDD = -9.6V,
VGS = 0V to -5V - 10 14 nC
VGS = 0V to -1V - 0.8 1.1 nC
VDS = -10V, VGS = 0V, f = 1MHz

(Figure 35)

OSS
RSS

θJC

TS-001AA, and MO-169AB - - 62

JA

θ

TC = 25oC---1µA
TC = 150oC - - -50 µA

- - 115 ns

-25-ns

-65-ns

-40-ns

-45-ns

- - 110 ns

-1924nC
ID = 10A,
RL = 1.0Ω
(Figure 36)

- 775 - pF

- 550 - pF

- 150 - pF

- - 3.00

o
o

C/W
C/W

P-Channel Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Voltage V
Reverse Recovery Time t

SD

ISD = -10A - - -1.5 V
ISD = -10A, dISD/dt = -100A/µs - - 100 ns

rr

Typical Performance Curves (N-Channel)

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

125

175

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

25 50 75 100 125 175

TC, CASE TEMPERATURE (oC)

150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

4-32

RF3V49092, RF3S49092SM

Typical Performance Curves (N-Channel) (Continued)

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

JC

θ

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-5

10

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-3

10

10

t, RECTANGULAR PULSE DURATION (s)

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

-1

10

0

10

2

1/t2

x R

JC

θ

+ T

JC

C

θ

1

10

100

TJ = MAX RATED, TC = 25oC

1000

TC = 25oC

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

25

-1

10

10

, DRAIN CURRENT (A)

OPERATION IN THIS

D

I

AREA MAY BE
LIMITED BY r

1

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

5ms
10ms

100ms

1s

DC

10 50

100

VGS = 5V

TRANSCONDUCTANCE

, PEAK CURRENT CAPABILITY (A)

MAY LIMIT CURRENT

DM

I

IN THIS REGION

10

-5

10

10

I = I

-4

-3

10

-2

10

t, PULSE WIDTH (s)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

100

10

STARTING TJ = 150oC

If R = 0

, AVALANCHE CURRENT (A)

tAV = (L)(IAS)/(1.3*RATED BV

AS

I

If R ≠ 0
t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

1

0.01

0.1
tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

- VDD)

DSS

- VDD) +1]

DSS

1 10 100

50

V

= 10V

GS

VGS = 5V

40

30

20

, DRAIN CURRENT (A)

D

I

10

PULSE DURATION = 80µs, TC = 25oC

0

012345

VDS, DRAIN TO SOURCE VOLTAGE (V)

DUTY CYCLE = 0.5% MAX

C

150

0

10

VGS = 4.5V

VGS = 4V

VGS = 3V

67

1

10

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

4-33

FIGURE 7. SATURATION CHARACTERISTICS