Intersil IRF9640, RF1S9640SM Datasheet

IRF9640, RF1S9640SM

Data Sheet July 1999

11A, 200V, 0.500 Ohm, P-Channel Power
MOSFETs

These are P-Channel enhancement mode silicon-gate
power field-effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and as drivers for
other high-power switching devices. The high input
impedance allows these types to be operated directly from
integrated circuits.

Formerly developmental type TA17522.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF9640 TO-220AB IRF9640
RF1S9640SM TO-263AB RF1S9640

NOTE: When ordering, usetheentirepartnumber.Add the suffix 9Ato
obtain the TO-263AB variant in the tape and reel, i.e., RF1S9640SM9A.

File Number

Features

• 11A, 200V

DS(ON)

= 0.500Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2284.2

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN

(FLANGE)

4-33

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF9640, RF1S9640SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF9640, RF1S9640SM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

-200 V

-200 V

-11

-7

-44 A
±20 V
125 W

A
A

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W/oC

Single Pulse Avalanche Energy Rating (Note 3, 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

790 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 2) I

D(ON)VDS

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Forward Transconductance (Note 2) g
Turn-On Delay Time t

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t

Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

= -250µA, VGS = 0V (Figure 10) -200 - - V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

> I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TC = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = -10V -11 - - A

VGS = ±20V - - ±100 nA

= -6A, VGS = -10V (Figures 8, 9) - 0.350 0.500 Ω

VDS > I

= 0.5 x Rated BV
VGS = -10V (Figures 17, 18)
RL = 8.4Ω for V
RL = 6.1Ω for V
MOSFET Switching Times are Essentially Indepen-

D(ON)

x r

DS(ON)MAX

DSS
DSS

, ID = -6A (Figure 12) 4 6 - S

, ID≈ -11A, RG = 9.1Ω

DSS

= -100V
= -75V

-1822ns

-4568ns

-7590ns

-2944ns

dent of Operating Temperature

= -10V, ID = -11A, VDS = 0.8 x Rated BV
I

= -1.5mA (Figures 14, 19, 20)

g(REF)

Gate Charge is Essentially Independent of
Operating Temperature

VDS = -25V, VGS = 0V, f = 1MHz
(Figure 11)

DSS

-7090nC

-55- nC

-15- nC

- 1100 - pF

- 375 - pF

- 150 - pF

Measured From the
Contact Screw on Tab To
Center of Die

Measured From the Drain
Lead, 6mm (0.25in) from
Package to Center of Die

MeasuredFromthe Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad

Modified MOSFET
Symbol Showing the In­ternal Devices
Inductances

D

L

D

G

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

- - 1.0

o

C/W

Typical Socket Mount - - 62.5oC/W

4-34

IRF9640, RF1S9640SM

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 3)

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
Reverse Recovery Charge Q

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 9.8mH, RG= 25Ω, peak IAS = 11A. See Figures 15, 16.

Modified MOSFET Sym­bol Showing the Integral
Reverse

D

- - -11 A

- - -44 A

P-N Junction Diode

G

S

TJ = 25oC, ISD = -11A, VGS = 0V (Figure 13) - - -1.5 V

SD

TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs - 300 - ns

rr

TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs - 1.9 - µC

RR

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

-15

-10

-5

, DRAIN CURRENT (A)

D

I

0

050

TC, CASE TEMPERATURE (oC)

100

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

150

0.2

0.1

0.1

, NORMALIZED

θJC

Z

TRANSIENT THERMAL IMPEDANCE

0.01

0.05

0.02

0.01

-5

10

SINGLE PULSE

10

4-35

-4

-3

10

t1, RECTANGULAR PULSE DURATION (s)

-2

10

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

P

DM

t

1

t

2

1/t2

x R

θJC

+ T

C

10

θJC

1