Intersil RF1S70N06SM, RFG70N06, RFP70N06 Datasheet

RFG70N06, RFP70N06, RF1S70N06SM

Data Sheet July 1999 File Number

70A, 60V, 0.014 Ohm, N-Channel Power
MOSFETs

These are N-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switchingregulators,switchingconverters, motor drivers and
relaydrivers. These transistors can be operated directly from
integrated circuits.

Formerly developmental type TA49007.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG70N06 TO-247 RFG70N06
RFP70N06 TO-220AB RFP70N06
RF1S70N06SM TO-263AB F1S70N06

NOTE: When ordering use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.

Features

• 70A, 60V

DS(on)

= 0.014Ω

®

Model

•r

• Temperature Compensated PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve (Single Pulse)

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

3206.5

Packaging

DRAIN

(BOTTOM

SIDE METAL)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

JEDEC TO-263AB

DRAIN

GATE

SOURCE

(FLANGE)

SOURCE

DRAIN

GATE

4-474

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG70N06, RFP70N06, RF1S70N06SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG70N06, RFP70N06

RF1S70N06SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

DM

GS

AS

D

Refer to Peak Current Curve

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V
70

±20 V

Refer to UIS Curve A

150

1.0

W/oC

-55 to 175

300
260

A

W

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)

Gate Charge at 10V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSS

DSS

GSS

(ON)

r

f

g(10)

g(TH)

ISS

OSS

RSS

θJC
θJA

ID = 250µA, VGS = 0V (Figure 11) 60 - - V
VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS = 60V, VGS = 0V - - 1 µA
VDS = 0.8 x Rated BV

, TC = 150oC--25µA

DSS

VGS = ±20V - - ±100 nA
ID = 70A, VGS = 10V (Figure 9) - - 0.014 Ω
VDD = 30V, I

VGS = 10V, RGS = 2.5Ω
(Figure 13)

≈ 70A, R

D

= 0.43Ω,

L

- - 125 ns

-12- ns

-50- ns

-40- ns

-15- ns

- - 125 ns
VGS = 0V to 20V VDD = 48V, ID = 70A,
VGS = 0V to 10V - 100 115 nC
VGS = 0V to 2V - 5.5 6.5 nC

RL = 0.68Ω
I

= 2.2mA

g(REF)

(Figure 13)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- 185 215 nC

- 3000 - pF

- 900 - pF

- 300 - pF

- - 1.0oC/W
TO-220 and TO-263 - - 62
TO-247 - - 30

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse test: pulse width ≤ 300ms, duty cycle ≤ 2%.

3. Repetitive rating:pulse width is limited bymaximum junction temperature. SeeTransient Thermal Impedance curve (Figure3) and Peak Current
Capability Curve (Figure 5).

4-475

ISD = 70A - 1.5 V
ISD = 70A, dISD/dt = 100A/µs - 125 ns

RFG70N06, RFP70N06, RF1S70N06SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

0.5

150

80

70

60

50

40

30

, DRAIN CURRENT (A)

20

D

I

10

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

125

150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.2

0.1

0.1

, NORMALIZED

JC

θ

Z

500

100

10

, DRAIN CURRENT (A)

D

I

1

1

0.05

0.02

THERMAL IMPEDANCE

0.01

0.01

-5

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

TC = 25oC

= MAX RATED

T

J

SINGLE PULSE

VDS, DRAIN TO SOURCE VOLTAGE (V)

SINGLE PULSE

DS(ON)

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

-1

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

1000

100µs

1ms

10ms

100ms

DC

10

100

, PEAK CURRENT (A)

DM

100

I

50

10

VGS = 10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

-4

10

10

t, PULSE WIDTH (s)

-3

P

DM

t

1

t

2

1/t2

x R

JC

θ

0

10

TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

=

II

-2

10

+ T

JC

C

θ

–

175 T




25



10

----------------------­150

-1

C

0

10

1

10

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-476