Intersil IRF640, RF1S640SM Datasheet

IRF640, RF1S640SM

Data Sheet June 1999

18A, 200V, 0.180 Ohm, N-Channel Power
MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA17422.

Ordering Information

PART NUMBER PACKAGE BRAND

IRF640 TO-220AB IRF640
RF1S640SM TO-263AB RF1S640

NOTE: Whenordering, usethe entire part number. Addthe suffix 9Ato
obtain the TO-263AB variant in the tape and reel, i.e., RF1S640SM9A.

File Number

Features

• 18A, 200V

DS(ON)

= 0.180Ω

•r

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speed

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

1585.5

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE
SOURCE

DRAIN
(FLANGE)

4-208

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

IRF640, RF1S640SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

IRF640, RF1S640SM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC= 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DS

D
D

DM

GS

D

200 V
200 V

18
11

72 A
±20 V
125 W

A
A

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

580 mJ

-55 to 150

300
260

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

On-State Drain Current (Note 1) I

D(ON)

Gate to Source Leakage Current I
Drain toSource On Resistance (Note1) r

DS(ON)ID

Forward Transconductance (Note 1) g
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge

Q

g(TOT)VGS

(Gate to Source + Gate to Drain)
Gate to Source Charge Q
Gate to Drain “Miller” Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Internal Drain Inductance L

Internal Source Inductance L

Thermal Resistance Junction to Case R
Thermal Resistance Junction to

Ambient

R
R

DSSID

DSS

GSS

fs

r

f

gs
gd

ISS
OSS
RSS

D

S

θJC

θJA

θJA

= 250µA, VGS = 0V, (Figure 10) 200 - - V

= VDS, ID = 250µA2-4V
VDS = Rated BV
VDS = 0.8 x Rated BV
VDS > I

D(ON)

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TJ = 125oC - - 250 µA

DSS

x r

DS(ON)MAX

, VGS = 10V (Figure 7) 18 - - A

VGS = ±20V - - ±100 nA

= 10A, VGS = 10V (Figures 8, 9) - 0.14 0.18 Ω
VDS≥ 10V, ID = 11A (Figure 12) 6.7 10 - S
VDD = 100V, ID≈ 18A, RGS = 9.1Ω, RL = 5.4Ω,

MOSFET Switching Times are Essentially
Independent of Operating Temperature

-1321ns

-5077ns

-4668ns

-3554ns

= 10V, ID≈ 18A, VDS = 0.8 x Rated BV

DSS

-4364nC
(Figure 14)Gate Charge isEssentially Independent
of Operating Temperature
I

= 1.5mA

G(REF)

-8-nC

-22- nC
VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) - 1275 - pF

- 400 - pF

- 100 - pF
Measured From the

Contact Screw on Tab to
Center of Die

Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die

Measured From the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad

Modified MOSFET
Symbol Showing the
Internal Devices
Inductances

G

D

L

D

L

S

S

- 3.5 - nH

- 4.5 - nH

- 7.5 - nH

--1oC/W
Free Air Operation, IRF640 - - 62
RF1S640SM Mounted on FR-4 Board with

--62oC/W

o

C/W

Minimum Mounting Pad

4-209

IRF640, RF1S640SM

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I
Pulse Source to Drain Current

SD

I

SDM

(Note 2)

Source to Drain Diode Voltage (Note 2) V

SD

Reverse Recovery Time t
Reverse Recovery Charge Q

RR

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD= 50V, starting TJ= 25oC, L = 3.37mH, RG= 25Ω, peak IAS = 18A.

Modified MOSFET
Symbol Showing the
Integral Reverse P-N

D

- - 18 A

- - 72 A

Junction Diode

G

S

TJ = 25oC, ISD = 18A, VGS = 0V, (Figure 13) - - 2.0 V
TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs 120 240 530 ns

rr

TJ = 25oC, ISD = 18A, dISD/dt = 100A/µs 1.3 2.8 5.6 µC

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZEDPOWER DISSIPATION vs CASE

TEMPERATURE

10

1

C/W)

o

, TRANSIENT

θJC

Z

THERMAL IMPEDANCE (

0.1

0.01

0.001

0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

-4

10

20

16

12

8

, DRAIN CURRENT (A)

D

I

4

0

25 50 75 100

FIGURE 2. MAXIMUMCONTINUOUS DRAIN CURRENT vs

-3

10

tP, RECTANGULAR PULSE DURATION (s)

-2

10

TC, CASE TEMPERATURE (oC)

CASE TEMPERATURE

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

125

P

DM

t

1

t

2

1/t2

+ T

θJC

1

150

C

10

4-210

FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE