Intersil RF1S60P03SM, RFG60P03, RFP60P03 Datasheet

RFG60P03, RFP60P03, RF1S60P03SM

Data Sheet July 1999

60A, 30V, 0.027 Ohm, P-Channel Power
MOSFETs

These P-Channel power MOSFETs are manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

Formerly developmental type TA49045.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG60P03 TO-247 RFG60P03
RFP60P03 TO-220AB RFP60P03
RF1S60P03SM TO-263AB F1S60P03

NOTE: When ordering,use theentirepart number. Add the suffix 9Ato
obtain the TO-263AB variant in tape and reel, i.e. RF1S60P03SM9A.

File Number

Features

• 60A, 30V

DS(ON)

= 0.027Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

3951.3

Packaging

DRAIN

(BOTTOM

SIDE METAL)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

GATE
SOURCE

DRAIN

(FLANGE)

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

4-140

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG60P03, RFP60P03, RF1S60P03SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG60P03, RFP60P03, RFS60P03SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage, (Rgs = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

-30 V

-30 V

±20 V

60

Figure 6

176

1.17

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(-10)VGS
g(TH)VGS

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V (Figure 11) -30 - - V

= VDS, ID = 250µA (Figure 10) -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - -1 µA

DSS

, TC = 150oC - - -50 µA

DSS

VGS = ±20V - - ±100 nA

= 60A, VGS = 10V - - 0.027 Ω

VDD = 15V, I
VGS = -10V, RG = 2.5Ω,
(Figure 13)

≈ 60A, R

D

= 0.25Ω,

L

- - 140 ns

-20-ns

-75-ns

-35-ns

-40-ns

- - 115 ns
= 0 to -20V VDD = -24V, ID≈ 60A,
= 0 to -10V - 100 120 nC
= 0 to -2V - 7.5 9 nC

RL = 0.4Ω
I

= -3mA

g(REF)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 12)

- 190 230 nC

- 3000 - pF

- 1500 - pF

- 525 - pF

(Figure 3) - - 0.85oC/W
TO-220AB, TO- 263AB - - 62
TO-247 - - 30

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

NOTE:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3)

4-141

ISD = -60A - - -1.75 V
ISD = -60A, dISD/dt = 100A/µs - - 200 ns

RFG60P03, RFP60P03, RF1S60P03SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

1

-70

-60

-50

-40

-30

-20

, DRAIN CURRENT (A)

D

I

-10

0

25 50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

0.5

0.2

0.1

THERMAL IMPEDANCE

0.01
10

-5

0.1

0.05

0.02

0.01
SINGLE PULSE

-4

10

NORMALIZED

JC,

θ

Z

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-500

-100

OPERATION IN THIS

-10

AREA MAY BE

, DRAIN CURRENT (A)

D

I

LIMITED BY r
TC = 25oC

= MAX RATED

T

J

-1

-1 -10 -60

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

-3

10

t, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

100ms
DC

-2

10

3

-10

, PEAK CURRENT (A)

2

DM

-10

I

-50
10

-1

10

TC = 25oC

VGS = -20V

VGS = -10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-6

-5

10

10

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

-4

-3

10

t, PULSE WIDTH (ms)

1/t2

x R

JC

θ

0

10

175 TC–



II

=

----------------------- -



25

150



-2

10

10

JC

θ

-1

+ T

10

C

1

10

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-142