Intersil RF1S4N100SM, RFP4N100 Datasheet
RFP4N100, RF1S4N100SM
Data Sheet August 1999 File Number
4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Formerly developmental type TA09850.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP4N100 TO-220AB RFP4N100
RF1S4N100SM TO-263AB F1S4N100
NOTE: When ordering, use the entire part number.
Features
• 4.3A, 1000V
DS(ON)
= 3.500Ω
•r
• UIS Rating Curve (Single Pulse)
o
C to 150oC Operating Temperature
• -55
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
2457.4
Packaging
DRAIN (FLANGE)
JEDEC TO-220AB JEDEC TO-263AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
4-528
CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP4N100, RF1S4N100SM
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP4N100,
RF1S4N100SM UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
DS
DM
GS
AS
D
(See UIS SOA Curve)
1000 V
1000 V
4.3 A
17 A
±20 V
mJ
(Figures 4, 14, 15)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
150
1.2
-55 to 150
300
260
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge
Q
(Gate to Source + Gate to Drain)
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
DSSID
GS(TH)VGS
DSS
VDS = 1000V, VGS = 0V - - 25 µA
VDS = 800V, VGS = 0V, TC = 150oC - - 100 µA
GSS
DS(ON)ID
d(ON)
VGS = ±20V - - ±100 nA
VDD = 500V, I
RL = 120Ω)
r
d(OFF)
f
g(TOT)VGS
(Figure 13)
θJC
θJA
= 250µA, VGS = 0V (Figure 10) 1000 - - V
= VDS, ID = 250µA2-4V
= 2.5A, VGS = 10V (Figures 8, 9) - - 3.500 Ω
≈ 3.9A, R
D
GS
= 9.1Ω,
--30ns
--50ns
- - 170 ns
--50ns
= 20V, ID = 3.9A, VDS = 800V
- - 120 nC
- - 0.83
o
C/W
--62oC/W
Source to Drain Diode Voltage V
Reverse Recovery Time t
SD
ISD = 4.3A - - 1.8 V
ISD = 3.9A, dISD/dt = 100A/µs - - 1000 ns
rr
NOTES:
2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
4-529
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