Intersil RF1S45N03L, RFP45N03L Datasheet

Semiconductor

/

September 1998

RFP45N03L,

RF1S45N03L, RF1S45N03LSM

45A, 30V, 0.022 Ohm,

Logic Level, N-Channel Power MOSFETs

[ /Title
(RFP45
N03L,
RF1S45
N03L,
RF1S45
N03LS
M)

Subject
(45A,
30V,

0.022
Ohm,

Features

• 45A, 30V

•r

DS(ON)

Temperature Compensating

•

• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.022Ω

PSPICE Model

o

C Operating Temperature

Components to PC Boards”

Ordering Information

PART NUMBER PACKAGE BRAND

RFP45N03L TO-220AB FP45N03L
RF1S45N03L TO-262AA F45N03L
RF1S45N03LSM TO-263AB F45N03L

Description

These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum utili­zation of silicon, resulting in outstanding performance. They
were designed for use in applications such as switching reg­ulators, switching conv erters, motor drivers and rela y drivers .
These transistors can be operated directly from integrated
circuits.

Formerly developmental type TA49030.

Symbol

D

G

S

NOTE: When ordering, use the entire part number. Add the suffix 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.

Packaging

JEDEC TO-220AB JEDEC TO-262AA

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

JEDEC TO-263AB

GATE

SOURCE

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1998

7-1

File Number 4005.2

RFP45N03L, RF1S45N03L, RF1S45N03LSM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP45N03L, RF1S45N03L,

RF1S45N03LSM UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage RGS = 20kΩ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

30 V
30 V

±10 V

45

Refer to UIS Curve

90

0.606

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Case R
Thermal Resistance Junction-to-Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V 30 - - V

= VDS, ID = 250µA1-2V
VDS = Rated BV
VDS = Rated BV

, VGS = 0V - - 25 µA

DSS

, VGS = 0V, TC = 150oC - - 250 µA

DSS

VGS = ±10V - - ±100 nA

= 45A, VGS = 5V (Figure 11 - - 0.022 Ω

VDD = 15V, ID = 45A, RL = 0.33Ω,
VGS = 5V, RGS = 5Ω
(Figures 15, 18, 19)

- - 260 ns

-15- ns

- 160 - ns

-20- ns

-20- ns

- - 60 ns

= 0V to 10V VDD = 24V, ID = 45A,
VGS = 0V to 5V - 30 36 nC
VGS = 0V to 1V - 1.5 1.8 nC

RL = 0.533Ω
I

= 0.6mA

G(REF)

(Figures 20, 21)

VDS = 25V, VGS = 0V, f = 1MHz
(Figure 14)

-5060nC

- 1650 - pF

- 575 - pF

- 200 - pF

- - 1.65oC/W

--80oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

ISD = 45A - - 1.5 V
ISD = 45A, dISD/dt = 100A/µs - - 125 ns

rr

7-2

RFP45N03L, RF1S45N03L, RF1S45N03LSM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

150

125

FIGURE 1. NORMALIZED POWER DISSIP ATION vs CASE

TEMPERA TURE

2

1

50

40

30

20

, DRAIN CURRENT (A)

D

I

10

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

125

150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.5

0.2

0.1

0.1

, NORMALIZED

JC

θ

Z

500

100

, DRAIN CURRENT (A)

D

I

0.05

0.02

THERMAL IMPEDANCE

0.01
SINGLE PULSE

0.01

-5

10

TC = 25oC, TJ = MAX RATED

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

500

VGS = 10V

DS(ON)

100µs

1ms

10ms

100ms

DC

10

50

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT

DM

10

10

IN THIS REGION

-5

, PEAK CURRENT CAPABILITY (A)
I

-4

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

VGS = 5V

-3

10

t, PULSE WIDTH (s)

P

DM

t

1

t

2

1/t2

x R

150

+ T

JC

θ

C

TC = 25oC

10

JC

θ

0

10

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

10

I = I

-2

o

C DERATE PEAK

175 - T

25

-1

10

C

1

10

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

7-3