Intersil RF1S45N02L, RFP45N02L Datasheet
May 1997
RFP45N02L,
RF1S45N02L, RF1S45N02LSM
45A, 20V, 0.022 Ohm, N-Channel
Logic Level Power MOSFETs
Features
• 45A, 20V
•r
DS(ON)
Temperature Compensating
•
= 0.022Ω
PSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
C Operating Temperature
• 175
Ordering Information
P AR T NUMBER P ACKAGE BRAND
RFP45N02L TO-220AB FP45N02L
RF1S45N02L TO-262AA F45N02L
RF1S45N02LSM TO-263AB F45N02L
NOTE: When ordering, use the entire part number. Add the suffix,
9A, to obtain the TO-263AB variant in tape and reel, e.g.
RF1S45N02LSM9A.
Packaging
JEDEC TO-220AB JEDEC TO-262AA
Description
The RFP45N02L, RF1S45N02L, and RF1S45N02LSM are
N-Channel power MOSFETs manufactured using the
MegaFET process. This process, which uses feature sizes
approaching those of LSI circuits, gives optimum utilization
of silicon, resulting in outstanding performance. They were
designed for use in applications such as switching
regulators, switching converters, motor drivers and relay
drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49243.
Symbol
D
G
S
SOURCE
DRAIN
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
GATE
GATE
SOURCE
JEDEC TO-263AB
A
M
A
1
(FLANGE)
DRAIN
(FLANGE)
DRAIN
SOURCE
DRAIN
GATE
A
File Number 4342
RFP45N02L, RF1S45N02L, RF1S45N02LSM
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
C
RFP45N02L, RF1S45N02L,
RF1S45N02LSM UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
20 V
20 V
±10 V
Drain Current
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DM
AS
D
Refer to Peak Current Curve
D
Derate Above 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
STG
L
45
Refer to UIS Curve
90
0.606
-55 to 175
260
A
W
W/oC
o
C
o
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g(5)
g(TH)
ISS
OSS
RSS
θJC
θJA
= 250µA, VGS = 0V 20 - - V
= VDS, ID = 250µA1-2V
VDS = 20V,
VGS = 0V
TC = 25oC--1µA
TC = 150oC--50µA
VGS = ±10V - - ±100 nA
= 45A, VGS = 5V - - 0.022 Ω
VDD = 15V, I
RL = 0.33Ω, VGS = 5V,
RGS = 5Ω
≅ 45A,
D
- - 260 ns
-15-ns
- 160 - ns
-20-ns
-20-ns
- - 60 ns
= 0V to 10V VDD = 16V,
I
≅ 45A,
VGS = 0V to 5V - 30 36 nC
D
RL = 0.35Ω
-5060nC
VGS = 0V to 1V - 1.5 1.8 nC
VDS = 15V, VGS = 0V,
f = 1MHz
- 1300 - pF
- 724 - pF
- 250 - pF
- - 1.65
o
C/W
--80oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
SD
rr
ISD = 45A - - 1.5 V
ISD = 45A, dISD/dt = 100A/µs - - 125 ns
2
RFP45N02L, RF1S45N02L, RF1S45N02LSM
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 175
TC, CASE TEMPERATURE (oC)
125
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING
2
1
0.5
0.2
0.1
0.1
, NORMALIZED
JC
θ
Z
THERMAL IMPEDANCE
0.01
.05
.02
.01
SINGLE PULSE
-5
10
-4
10
10
50
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
150
25 50 75 100
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
-3
t, RECTANGULAR PULSE DURATION (s)
-2
10
125
TC, CASE TEMPERATURE (oC)
P
DM
t
1
t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x R
-1
10
2
1/t2
JC
θ
0
10
x Z
θ
150
JC
+ T
175
C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
TC = 25oC, TJ = MAX RATED
100
10
, DRAIN CURRENT (A)
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
1
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
V
DSS
MAX = 20V
10
100µs
1ms
10ms
100ms
DC
50
500
VGS = 10V
100
, PEAK CURRENT (A)
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
DM
IN THIS REGION
10
-5
10
-4
10
VGS = 5V
-3
10
10
t, PULSE WIDTH (s)
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
-2
o
C DERATE PEAK
175 - T
25
-1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
3
150
C
TC = 25oC
0
10
1
10
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