Intersil RF1S30P05SM, RFG30P05, RFP30P05 Datasheet

RFG30P05, RFP30P05, RF1S30P05SM

Data Sheet July 1999

30A, 50V, 0.065 Ohm, P-Channel Power
MOSFETs

These are P-Channel power MOSFETs manufactured
using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as s witching regulators, switching conv erters, motor
drivers, and relay drivers. These transistors can be
operated directly from integrated circuits.

Formerly developmental type TA09834.

Ordering Information

PART NUMBER PACKAGE BRAND

RFG30P05 TO-247 RFG30P05
RFP30P05 TO-220AB RFP30P05
RF1S30P05SM TO-263AB F1S30P05

NOTE: When ordering,usethe entirepart number. Addthesuffix 9Ato
obtain the TO-263AB variant in tape and reel, i.e., RF1S30P05SM9A.

File Number

Features

• 30A, 50V

DS(ON)

= 0.065Ω

®

Model

•r

• Temperature Compensating PSPICE

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

o

C Operating Temperature

• 175

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2436.4

Packaging

DRAIN

(BOTTOM

SIDE METAL)

JEDEC STYLE TO-247 JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

GATE

SOURCE

(FLANGE)

DRAIN

(FLANGE)

DRAIN

SOURCE

DRAIN

GATE

4-126

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFG30P05, RFP30P05, RF1S30P05SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFG30P05, RFP30P05

RF1S30P05SM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

GS

DM

D

Refer to Peak Current Curve

D

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Rating (Figure 6). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

AS

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

-50 V

-50 V

±20 V

30

120

0.8

Refer to UIS Curve

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

(OFF)
g(TOT)VGS

Gate Charge at -10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Ambient R

DSSID

DSS

GSS

(ON)

r

f

g(-10)
g(TH)

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V -50 - - V

= VDS, ID = 250µA -2 - -4 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - -1 µA

DSS

, TC = 150oC - - -25 µA

DSS

VGS = ±20V - - ±100 nA

= 30A, VGS = -10V (Figure 9) - - 0.065 Ω

VDD = -25V, ID = 15A,
RL = 1.67Ω, VGS = -10V,
RG = 6.25Ω
(Figure 13)

- - 80 ns

-15-ns

-23-ns

-28-ns

-18-ns

- - 100 ns

= 0 to -20V VDD = -40V,
VGS = 0 to -10V - 70 85 nC
VGS = 0 to -2V - 5.5 6.6 nC

ID = 30A, RL = 1.33Ω,
I

= 1.6mA

G(REF)

VDS = -25V, VGS = 0V
f = 1MHz
(Figure 12)

- 140 170 nC

- 3200 - pF

- 800 - pF

- 175 - pF

- - 1.25oC/W
TO-220, TO-263 - - 62
TO-247 - - 30

o

C/W

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

SD

rr

NOTES:

2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4-127

ISD = -30A - - -1.5 V
ISD = -30A, dISD/dt = -100A/µs - - 150 ns

RFG30P05, RFP30P05, RF1S30P05SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 175

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

2

1

150

-40

-30

-20

, DRAIN CURRENT (A)

D

-10

I

0

25

50 75 100 125 150 175

TC, CASE TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENTvs

CASE TEMPERATURE

0.5

0.2

0.1

0.1

, NORMALIZED

θJC

Z

-200

-100

-10

, DRAIN CURRENT (A)

D

I

-1

-1

0.05

THERMAL IMPEDANCE

0.02

0.01

0.01

-5

10

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

V

SINGLE PULSE

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

DS(ON)

V

MAX = -50V

DSS

T

= 25oC

C

-10

, DRAIN TO SOURCE VOLTAGE (V)

DS

-3

10

t, RECTANGULAR PULSE DURATION (s)

100µs

1ms

10ms

100ms

DC

-100

-2

10

-500

-100

, PEAK CURRENT (A)

DM

I

-10
10

-1

10

VGS = -20V

VGS = -10V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-5

-4

10

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z

10

= 25oC

T

C

FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

II

=

-3

10

t, PULSE WIDTH (s)

-2

10

2

x R

θJC

θJC

0

–

175 T

---------------------

150

-1

10

C



25



10

+ T

C

1

10

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

4-128