Intersil RF1S30N06LESM, RFP30N06LE Datasheet

RFP30N06LE, RF1S30N06LESM

/
j

/

/

[ /Title
(RFP3
0N06L
E,
RF1S3
0N06L
ESM)

Sub-

ect
(30A,
60V,
ESD
Rated,

0.047
Ohm,
Logic
Level
N­Chan­nel
Power
MOS­FETs)

Autho
r ()

Key­words
(Inter­sil
Corpo­ration,
ESD
Rated,

0.047
Ohm,
Logic
Level
N­Chan-

Data Sheet April 1999 File Number

30A, 60V, ESD Rated, 0.047 Ohm, Logic
Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.

These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49027.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP30N06LE TO-220AB F30N06LE
RF1S30N06LESM TO-263AB 1S30N06L

NOTE: Whenordering usethe entire part number.Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.

Packaging

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

Features

• 30A, 60V

•r

• 2kV ESD Protected

• Temperature Compensating PSPICE™ Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.047Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

DRAIN

GATE

SOURCE

(FLANGE)

3629.2

6-260

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE™ is a trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP30N06LE, RF1S30N06LESM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

A

RFP30N06LE, RF1S30N06LESM UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

GS

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD 2 kV

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

60 V
60 V

+10, -8 V

30

Refer to UIS Curve

96

0.645

-55 to 175

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

θJC

θJA

= 250µA, VGS = 0V, Figure 11 60 - - V

= VDS, ID = 250µA, Figure 10 1 - 2 V
VDS = Rated B
VDS = 0.8 x Rated B

, VGS = 0 - - 25 µA

VDSS

, VGS = 0, TC = 150oC - - 250 µA

VDSS

VGS = +10, -8V - - ±10 µA

= 30A, VGS = 5V, Figure 9 - - 0.047 Ω

VDD = 30V, ID = 30A, RL = 1Ω, VGS = 5V,
RGS = 2.5Ω,
Figures 13, 16, 17

- - 140 ns

-11-ns

-88-ns

-30-ns

-40-ns

- - 100 ns

= 0V to 10V VDD = 48V,
VGS = 0V to 5V - 28 34 nC
VGS = 0V to 1V - 1.8 2.6 nC

ID = 30A,
RL = 1.6Ω
Figures 18, 19

VDS = 25V, VGS = 0V,
f = 1MHz
Figure 12

-5162nC

- 1350 - pF

- 290 - pF

-85-pF

- - 1.55oC/W

--80oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V

SD

Diode Reverse Recovery Time t

NOTES:

2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.

3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).

6-261

ISD = 30A - - 1.5 V
ISD = 30A, dISD/dt = 100A/µs - - 125 ns

rr

RFP30N06LE, RF1S30N06LESM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

25 50 75 100

0

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE

TEMPERATURE

1

0.5

150

175

40

30

20

, DRAIN CURRENT (A)

10

D

I

0

25 50 75 100

TC, CASE TEMPERATURE (oC)

125 150

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

175

0.2

0.1

0.1

THERMAL IMPEDANCE

0.01

0.05

0.02

0.01
SINGLE PULSE

-5

10

-4

10

-3

10

, NORMALIZED

JC

θ

Z

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

200

100

10

, DRAIN CURRENT (A)
I

D

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25oC

= MAX RATED

T

J

-2

10

t, RECTANGULAR PULSE DURATION (s)

500

100ms

1ms

10ms

100ms

DC

VGS = 10V

100

, PEAK CURRENT CAPABILITY (A)

DM

I

20

-6

10

VGS = 5V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

P

DM

t

1

t

2

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-1

10

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

-5

10

-4

10

10-310

t, PULSE WIDTH (s)

1/t2

x R

JC

θ

0

10

o

C DERATE PEAK

175 Tc–



II

=

---------------------- -



25



-2

+ T

JC

C

θ

1

10

150

TC = 25oC

10-110010

1

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

6-262

FIGURE 5. PEAK CURRENT CAPABILITY