Intersil RF1S25N06SM, RFP25N06 Datasheet
RFP25N06, RF1S25N06SM
Data Sheet July 1999 File Number
25A, 60V, 0.047 Ohm, N-Channel Power
MOSFETs
These N-Channel power MOSFETs are manufacturedusing
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relaydrivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09771.
Ordering Information
P AR T NUMBER P ACKAGE BRAND
RFP25N06 TO-220AB RFP25N06
RF1S25N06SM TO-263AB F1S25N06
NOTE: When ordering use the entire part number. Add the suffix, 9A,
toobtaintheTO-263ABvariant in tape and reel, e.g. RF1S25N06SM9A.
Features
• 25A, 60V
DS(ON)
= 0.047Ω
®
Model
•r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
o
C Operating Temperature
• 175
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
1492.4
Packaging
DRAIN
(FLANGE)
S
JEDEC TO- 220AB JEDEC TO-263AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
4-511
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RFP25N06, RF1S25N06SMS
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP25N06,
RF1S25N06SM UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
DSS
DGR
GS
D
DM
AS
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60 V
60 V
±20 V
25
(Figure 5)
(Figure 6)
72
0.48
-55 to 175
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 150oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I
DSS ID
GS(TH) VGS
DSS
= 250µA, VGS = 0V (Figure 11) 60 - - V
= VDS, ID = 250µA (Figure 10) 2 - 4 V
VDS= 60V TC = 25oC--1µA
VGS = 0V TC = 150oC--50µA
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON) ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT) VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
GSS
OFF
g(10)
g(TH)
OSS
VGS = ±20V - - ±100 nA
= 25A, VGS = 10V (Figure 9) - - 0.047 Ω
VDD = 30V, ID = 12.5A
ON
RL = 2.4Ω, VGS = 10V
RGS = 10Ω
(Figure 13)
r
- - 60 ns
-14-ns
-30-ns
-45-ns
f
-22-ns
- - 100 ns
= 0 to 20V VDD = 48V, ID = 25A,
VGS = 0 to 10V - - 45 nC
VGS = 0 to 2V - - 3 nC
VDS = 25V, VGS = 0V
ISS
RL= 1.92Ω
I
= 0.75mA
g(REF)
(Figure 13)
f = 1MHz
(Figure 12)
RSS
(Figure 3) - - 2.083oC/W
θJC
θJA
- - 80 nC
- 975 - pF
- 330 - pF
-95-pF
--62oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
4-512
ISD = 25A - - 1.5 V
SD
ISD = 25A, dISD/dt = 100A/µs - - 125 ns
rr
RFP25N06, RF1S25N06SM
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
Unless Otherwise Specified
POWER DISSIPATION MULTIPLIER
0
025
50
TC, CASE TEMPERATURE (oC)
75 100
125
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
1
0.5
150
175
30
25
20
15
10
, DRAIN CURRENT (A)
D
I
5
0
25 50 75 100
TC, CASE TEMPERATURE (oC)
125
150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
175
0.2
0.1
0.1
, NORMALIZED
Z
200
100
10
, DRAIN CURRENT (A)
D
I
1
1
0.05
JC
0.02
θ
0.01
THERMAL IMPEDANCE
0.01
-5
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
V
DS
SINGLE PULSE
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TC = 25oC
T
J
SINGLE PULSE
DS(ON)
10
, DRAIN TO SOURCE VOLTAGE (V)
-3
10
t1, RECTANGULAR PULSE DURATION (s)
= MAX RATED
100µs
1ms
10ms
100ms
DC
100
-2
10
200
100
, PEAK CURRENT (A)
DM
I
10
-1
10
VGS = 20V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
10
-4
10
P
DM
NOTES:
DUTY FACTOR: D = t1/t
PEAK TJ = PDM x Z
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
VGS = 10V
-3
10
t, PULSE WIDTH (s)
10
II
-2
2
x R
C
J
θ
0
10
=
25
-1
10
t
1
t
2
C
J
θ
175 TC–
----------------------- 150
+ T
C
10
TC = 25oC
0
10
1
1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
4-513
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