Intersil RF1K49224 Datasheet

RF1K49224

Data Sheet August 1999 File Number

3.5A/2.5A, 30V, 0.060/0.150 Ohms,
Complementary LittleFET™ Power
MOSFET

The RF1K49224 complementary power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
intergrated circuits.

Formerly developmental type TA49224.

Ordering Information

PART NUMBER PACKAGE BRAND

RF1K49224 MS-012AA RF1K49224

NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e.RF1K4922496.

Features

• 3.5A, 30V (N-Channel)

2.5A, 30V (P-Channel)

•r
r

• Temperature Compensating PSPICE

= 0.060Ω (N-Channel)

DS(ON)

= 0.150Ω (P-Channel)

DS(ON)

®

Model

• Thermal Impedance PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D1(8)
D1(7)

S1(1)

G1(2)

4330.1

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

D2(6)
D2(5)

S2(3)

G2(4)

5

3

4

9-16

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RF1K49224

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

A

N-CHANNEL P-CHANNEL UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS= 20kΩ ) . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 -30 V
30 -30 V

±20 ±20 V

Drain Current

Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . .I

Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

3.5

2.5

Refer to Peak Current Curve

Refer to UIS Curve Refer to UIS Curve

2

0.016

2

0.016

-55 to 150 -55 to 150

300
260

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

N-Channel Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

DSSID

GS(TH)VGS

DSS

GSS

= 250µA, VGS = 0V 30 - - V

= VDS, ID = 250µA 1-3V

VDS = 30V,
VGS = 0V

TA = 25oC--1µA
TA = 150oC--50µA

VGS = ±20V - - 100 nA

= 3.5A VGS = 10V - - 0.060 Ω

VGS = 4.5V 0.132 Ω
Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

ON

OFF

g(10)

g(TH)

ISS

OSS

RSS

θ

VDD = 15V, I
RL = 4.29Ω, VGS = 10V,
RGS = 25Ω

r

≅ 3.5A,

D

- - 50 ns

-10-ns

-30-ns

-60-ns

f

-45-ns

- - 130 ns

= 0V to 20V VDD = 24V,

I

≅ 3.5A,

VGS = 0V to 10V - 13 17 nC
VGS = 0V to 2V - 2.3 2.9 nC

D

RL = 6.86Ω

I

= 1.0mA

g(REF)

VDS = 25V, VGS = 0V,
f = 1MHz

-3545nC

- 575 - pF

- 275 - pF

- 100 - pF

JA

Pulse width = 1s

- - 62.5

Device mounted on FR-4 material

o

C/W

N-Channel Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

9-17

SD

ISD = 3.5A - - 1.25 V
ISD = 3.5A, dISD/dt = 100A/µs--45ns

rr

RF1K49224

P-Channel Electrical Specifications T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

Turn-On Time t
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Turn-Off Time t
Total Gate Charge Q
Gate Charge at -10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

= 25oC, Unless Otherwise Specified

A

DSSID

GS(TH)VGS

DSS

GSS

DS(ON)ID

= 250µA, VGS = 0V -30 - - V

= VDS, ID = 250µA -1 - -3 V

VDS = -30V,
VGS = 0V

TA = 25oC---1µA
TA = 150oC - - -50 µA

VGS = ±20V - - 100 nA

= 2.5A VGS = -10V - - 0.150 Ω

VGS = -4.5v 0.360 Ω

ON

VDD = -15V, I

≅ 2.5A,

D

RL = 6Ω, VGS = -10V,

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(-10)
g(TH)

ISS

RGS = 25Ω

r

f

= 0V to -20V V
VGS = 0V to -10V - 15 19 nC
VGS = 0V to -2V - 1.5 1.9 nC

I
RL = 9.6Ω
I

VDS = -25V, VGS = 0V,
f = 1MHz

OSS
RSS

θJA

Pulse width = 1s
Device mounted on FR-4 material

DD

≅ 2.5A,

D

g(REF)

= -24V,

= -1.0mA

- - 40 ns

-9-ns

-19-ns

-60-ns

-34-ns

- - 140 ns

-2835nC

- 580 - pF

- 260 - pF

-38-pF

- - 62.5

o

C/W

P-Channel Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

ISD = -2.5A - - -1.25 V

SD

ISD = -2.5A, dISD/dt = -100A/µs--49ns

rr

Typical Performance Curves (N-Channel)

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZEDPOWER DISSIPATIONvs AMBIENT

TEMPERATURE

125

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

1.0

D

I

0.5
0

25

50

TA, AMBIENT TEMPERATURE (oC)

75 100 125 150

FIGURE 2. MAXIMUM CONTINUOUSDRAINCURRENTvs

AMBIENT TEMPERATURE

9-18

RF1K49224

Typical Performance Curves (N-Channel)

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

1

0.05

0.02

0.01

0.1

, NORMALIZED

JA

θ

Z

0.01

THERMAL IMPEDANCE

0.001

-5

10

100

10

1

, DRAIN CURRENT (A)

D

0.1

OPERATION IN THIS

I

AREA MAY BE
LIMITED BY r

0.01

0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

SINGLE PULSE

-4

10

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TJ = MAX RATED
T

= 25oC

A

5ms

10ms

100ms

1s

V

DSS(MAX)

= 30V

1 10 100

DC

(Continued)

10

-1

10

200

100

VGS = 10V

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT

, PEAK CURRENT (A)

IN THIS REGION

DM

I

1

-5

10

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0

1

10

TA = 25oC

θ

FOR TEMPERATURES
ABOVE 25

2

1/t2

x R

JA

+ T

JA

θ

2

10

o

C DERATE PEAK

A

3

10

CURRENT AS FOLLOWS:

150 - T

I = I

25

-4

10

-3

10

-2

10

10

A

125

-1

0

10

1

10

t, PULSE WIDTH (s)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

20

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

10

DSS

- VDD)

DSS

- VDD) +1]

25

V

= 20V

20

GS

VGS = 10V

15

, AVALANCHE CURRENT (A)

AS

I

STARTING TJ = 150oC

1

0.1
tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

1 10 100

10

, DRAIN CURRENT (A)

D

I

5

0

012345

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 25oC

T

A

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

FIGURE 7. SATURATION CHARACTERISTICS

9-19

VGS = 5V

VGS = 4.5V

VGS = 4V

V

= 3V

GS

RF1K49224

Typical Performance Curves (N-Channel)

25

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

20

15

10

5

, ON-STATE DRAIN CURRENT (A)

D(ON)

I

0

0

VGS, GATE TO SOURCE VOLTAGE (V)

3.0 4.5 6.0 7.51.5

25oC

-55oC
150oC

FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. DRAIN TO SOURCE ON RESISTANCEvsGATE

2.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 3.5A

1.5

V

= 15V

DD

(Continued)

250

= 7.0A

I

200

150

100

, DRAIN TO SOURCE

ID = 0.5A

ON RESISTANCE (mΩ)

DS(ON)

50

r

0

38910

D

I

= 3.5A

D

ID = 1.75A

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD= 15V

6475

VOLTAGE AND DRAIN CURRENT

2.0
VGS = VDS, ID = 250µA

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2.0
ID = 250µA

1.5

1.0

0.5

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0

-80

-40 0 40 80 120
, JUNCTION TEMPERATURE (oC)

T

J

160

1.0

0.5

NORMALIZED GATE

THRESHOLD VOLTAGE

0

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

1000

750

C

ISS

500

C

OSS

C, CAPACITANCE (pF)

250

C

RSS

0

0 5 10 15 20

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

= CGS + C

C
C
C

ISS
RSS
OSS

= C

GD

= CDS + C

GD

GD

25

FIGURE 12. NORMALIZEDDRAINTO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

9-20

FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE