Intersil RF1K49221 Datasheet

RF1K49221

Data Sheet August 1999

2.5A, 60V, 0.130 Ohm, ESD Rated, Dual
N-Channel LittleFET™ Power MOSFET

The RF1K49221 Dual N-Channel power MOSFET is
manufactured using an advanced MegaFET process. This
process, which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
integrated circuits.

The RF1K49221 incorporates ESD protection and is
designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49221.

Ordering Information

PART NUMBER PACKAGE BRAND

RF1K49221 MS-012AA RF1K49221

NOTE: When ordering, use the entire part number. For ordering in
tape and reel, add the suffix 96 to the part number, i.e.RF1K4922196.

File Number

Features

• 2.5A, 60V

DS(ON)

= 0.130Ω

•r

• 2kV ESD Protected

®

• Temperature Compensating PSPICE

Model

• Thermal Impedance PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D1(8)
D1(7)

S1(1)

G1(2)

4314.1

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

D2(6)
D2(5)

S2(3)

G2(4)

5

3

4

8-136

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RF1K49221

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

A

RF1K49221 UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

60 V
60 V

±20 V

Drain Current

Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DM

AS

D

Refer to Peak Current Curve

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . . ESD 2 kV

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

2.5

Refer to UIS Curve

2

0.016

-55 to 150

300
260

A

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate to Source Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSSID

GS(TH)VGS

DSS

GSS

= 250µA, VGS = 0V, (Figure 12) 60 - - V

= VDS, ID = 250µA, (Figure 11) 1 - 3 V

VDS = 60V,
VGS = 0V

TA = 25oC--1µA

TA = 150oC--50µA
VGS = ±20V, TA = 25oC--10µA
VGS = ±10V, TA = 85oC--25µA

Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

ON

r

f

OFF

g(10)

g(TH)

ISS

OSS

RSS

θJA

= 2.5A,

(Figures 9, 10)

VDD = 30V, I
RL = 12Ω, VGS = 10V,
RGS = 25Ω,
(Figure 14)

VGS = 10V - - 0.130 Ω

VGS = 4.5V - - 0.350 Ω

≅ 2.5A,

D

- - 50 ns

-10-ns

-25-ns

-68-ns

-32-ns

- - 150 ns

= 0V to 20V VDD = 48V, I
VGS = 0V to 10V - 13 16 nC
VGS = 0V to 2V - 0.8 1.0 nC

RL = 19.2Ω
I

g(REF)

(Figure 14)

VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)

D

= 1.0mA

≅ 2.5A,

-2429nC

- 365 - pF

- 140 - pF

-40-pF

Pulse Width = 1s

- - 62.5

o

C/W

Device mounted on FR-4 material

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

8-137

SD

rr

ISD = 2.5A - - 1.25 V
ISD = 2.5A, dISD/dt = 100A/µs--58ns

Typical Performance Curves

1.2

RF1K49221

3.0

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs AMBIENT

TEMPERATURE

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

1

0.05

0.02

0.01

0.1

, NORMALIZED

JA

θ

Z

0.01

THERMAL IMPEDANCE

0.001

-5

10

SINGLE PULSE

-4

10

-3

10

10

t, RECTANGULAR PULSE DURATION (s)

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

0

25

50

75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

-1

10

0

10

1

10

θ

2

2

x R

JA

+ T

JA

A

θ

2

10

3

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

50

10

1

, DRAIN CURRENT (A)

0.1

D

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.01

0.1
V

DS

TJ = MAX RATED
T

= 25oC

A

5ms

10ms

100ms

1s

DS(ON)

V

DSS(MAX)

1 10 200

= 60V

DC

100

, DRAIN TO SOURCE VOLTAGE (V)

100

VGS = 20V

VGS = 10V

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT

, PEAK CURRENT (A)

IN THIS REGION

DM

I

1

-5

10

-4

10

TA = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

-3

10

-2

10

t, PULSE WIDTH (s)

o

25

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

8-138

C DERATE PEAK

150 - T

A

125

-1

0

10

1

10