Intersil RF1K49157 Datasheet
RF1K49157
Data Sheet August 1999
6.3A, 30V, 0.030 Ohm, Single N-Channel
LittleFET™ Power MOSFET
This Single N-Channel power MOSFET is manufactured
using an advanced MegaFET process. This process, which
uses feature sizes approaching those of LSI integrated
circuits, gives optimum utilization of silicon, resulting in
outstanding performance. It was designed for use in
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and low voltage bus
switches. This device can be operated directly from
integrated circuits.
Formerly developmental type TA49157.
Ordering Information
PART NUMBER PACKAGE BRAND
RF1K49157 MS-012AA RF1K49157
NOTE: Whenordering, use the entire partnumber.For ordering in tape
and reel, add the suffix 96 to the part number, i.e., RF1K4915796.
File Number
Features
• 6.3A, 30V
DS(ON)
= 0.030Ω
•r
• Temperature Compensating PSPICE™ Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
NC (1)
SOURCE (2)
DRAIN (8)
DRAIN (7)
4012.5
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
SOURCE (3)
GATE (4)
5
3
4
DRAIN (6)
DRAIN (5)
8-122
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET™ is a trademark of Intersil Corporation. PSPICE™ is a trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RF1K49157
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
A
RF1K49157 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
DGR
GS
30 V
30 V
±20 V
Drain Current
Continuous (Pulse width = 1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
DM
AS
D
Refer to Peak Current Curve
6.3
Refer to UIS Curve
A
Power Dissipation
TA = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
2
0.016
-55 to 150
300
260
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g(10)
g(TH)
ISS
OSS
RSS
JA
θ
= 250µA, VGS = 0V, (Figure 12) 30 - - V
= VDS, ID = 250µA, (Figure 11) 1 - 3 V
VDS = 30V,
VGS = 0V
TA = 25oC--1µA
TA = 150oC--50µA
VGS = ±20V - - ±100 nA
= 6.3A
(Figures 9, 10)
VDD = 15V, ID≈ 6.3A,
RL = 2.38Ω, VGS = 10V,
RGS = 25Ω
VGS = 10V - - 0.030 Ω
VGS = 4.5V - - 0.060 Ω
- - 85 ns
-22-ns
-43-ns
- 125 - ns
-85-ns
- - 265 ns
= 0V to 20V VDD = 24V,
VGS = 0V to 10V - 38 48 nC
VGS = 0V to 2V - 2.8 3.5 nC
ID = 6.3A,
RL = 3.81Ω
(Figure 14)
VDS = 25V, VGS = 0V,
f = 1MHz
(Figure 13)
-7088nC
- 1575 - pF
- 700 - pF
- 200 - pF
Pulse width = 1s
- - 62.5
o
C/W
Device mounted on FR-4 material
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
8-123
SD
rr
ISD = 6.3A - - 1.25 V
ISD = 6.3A, dISD/dt = 100A/µs--60ns
Typical Performance Curves
RF1K49157
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
TA, AMBIENT TEMPERATURE (oC)
125
FIGURE 1. NORMALIZED POWERDISSIPATION vs AMBIENT
TEMPERATURE
10
1
0.5
0.1
THERMAL IMPEDANCE
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-3
10
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (s)
, NORMALIZED
θJA
Z
7
6
5
4
3
2
, DRAIN CURRENT (A)
D
I
1
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAINCURRENT vs
AMBIENT TEMPERATURE
P
DM
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
0
10
1
10
1/t2
x R
JA
θ
2
10
t
1
t
2
+ T
JA
A
θ
3
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
10
1
, DRAIN CURRENT (A)
D
0.1
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
0.01
0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
1 10 100
TJ = MAX RATED, TA = 25oC
V
DSS(MAX)
= 30V
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
8-124
5ms
10ms
100ms
1s
DC
300
100
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
, PEAK CURRENT CAPABILITY (A)
I = I
I
DM
1
25
-5
10
10
FIGURE 5. PEAK CURRENT CAPABILITY
VGS = 20V
VGS = 10V
o
C DERATE PEAK
150 - T
A
125
-4
-3
10
t, PULSE WIDTH (s)
TA = 25oC
-2
10
-1
10
0
10
1
10
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