Intersil RF1K49156 Datasheet

RF1K49156

Data Sheet August 1999 File Number

6.3A, 30V, 0.030 Ohm, Logic Level, Single
N-Channel LittleFET™ Power MOSFET

This Single N-Channel power MOSFET is manufactured
using an advanced MegaFET process. This process, which
uses feature sizes approaching those of LSI integrated
circuits, gives optimum utilization of silicon, resulting in
outstanding performance. It was designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. This product achieves full rated conduction at a
gate bias in the 3V - 5V range, thereby facilitating true on-off
power control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49156.

Ordering Information

PART NUMBER PACKAGE BRAND

RF1K49156 MS-012AA RF1K49156

NOTE: When ordering,usethe entire part number.Forordering intape
and reel, add the suffix 96 to the part number, i.e., RF1K4915696.

Features

• 6.3A, 30V

DS(ON)

= 0.030Ω

®

Model

•r

• Temperature Compensating PSPICE

• On-Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

NC (1)

SOURCE (2)

DRAIN (8)

DRAIN (7)

4011.3

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

SOURCE (3)

GATE (4)

5

3

4

DRAIN (6)

DRAIN (5)

8-115

CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.

LittleFET™ is a trademark of Intersil Corporation. PSPICE™ is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RF1K49156

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

A

RF1K49156 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS= 20kΩ, Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

GS

30 V
30 V

±10 V

Drain Current

Continuous (Pulse width = 1s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

DM

AS

D

Refer to Peak Current Curve

6.3

Refer to UIS Curve

A

Power Dissipation

TA = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

2

0.016

-55 to 150

300
260

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

JA

θ

= 250µA, VGS = 0V, (Figure 13) 30 - - V

= VDS, ID = 250µA, (Figure 12) 1 - 2 V

VDS = 30V,
VGS = 0V

TA = 25oC--1µA
TA = 150oC--50µA

VGS = ±10V - - ±100 nA

= 6.3A, VGS = 5V, (Figures 9, 11) - - 0.030 Ω

VDD = 15V, ID≈ 6.3A,
RL = 2.38Ω, VGS = 5V,
RGS = 25Ω
(Figure 10)

- - 165 ns

-35-ns

- 100 - ns

- 150 - ns

-95-ns

- - 300 ns

= 0V to 10V VDD = 24V,
VGS = 0V to 5V - 29 37 nC
VGS = 0V to 1V - 1.8 2.3 nC

ID = 6.3A,
RL = 3.81Ω
(Figure 15)

VDS = 25V, VGS = 0V,
f = 1MHz (Figure 14)

-5265nC

- 2030 - pF

- 625 - pF

- 105 - pF

Pulse Width = 1s

- - 62.5

o

C/W

Device Mounted on FR-4 Material

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

8-116

SD

rr

ISD = 6.3A - - 1.05 V
ISD = 6.3A, dISD/dt = 100A/µs--58ns

Typical Performance Curves

RF1K49156

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vsAMBIENT

TEMPERATURE

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

1

0.01

7

6

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

P

DM

, NORMALIZED

0.1

θJA

Z

THERMAL IMPEDANCE

0.01

-3

10

100

10

1

, DRAIN CURRENT (A)

D

0.1

I

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.01

0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)

SINGLE PULSE

-2

10

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

TJ = MAX RATED, TA = 25oC

V

MAX = 30V

DSS

DS(ON)

1 10 100

-1

0

10

t, RECTANGULAR PULSE DURATION (s)

200

100

5ms
10ms

10

100ms

TRANSCONDUCTANCE

1s

DC

MAY LIMIT CURRENT

, PEAK CURRENT CAPABILITY (A)

IN THIS REGION

DM

I

1

-5

10

1

10

VGS = 5V

-4

10

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

2

10

FOR TEMPERATURES

ABOVE 25

CURRENT AS FOLLOWS:

I = I

-3

10

-2

10

t, PULSE WIDTH (s)

t

1

t

2

1/t2

x R

JA

θ

θ

o

C DERATE PEAK

150 - T

25

-1

10

JA

125

+ T

A

A

TA = 25oC

10

3

10

0

1

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

8-117