Intersil RF1K49154 Datasheet
RF1K49154
Data Sheet October 1999
2A, 60V, 0.130 Ohm, Dual N-Channel,
LittleFET™ Power MOSFET
This Dual N-Channel powerMOSFETismanufacturedusing
the latest manufacturing process technology. This process,
which uses feature sizes approaching those of LSI
integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. It is designed for use
in applications such as switching regulators, switching
converters, motor drivers, relay drivers, and low voltage bus
switches. These devices can be operated directly from
integrated circuits.
Formerly developmental type TA49154.
Ordering Information
PART NUMBER PACKAGE BRAND
RF1K49154 MS-012AA RF1K49154
NOTE: When ordering, use the entire part number. For ordering in
tape andreel, add thesuffix96 to thepart number, i.e., RF1K4915496.
File Number 4143.3
Features
• 2A, 60V
•r
DS(ON)
• Temperature Compensating PSPICE
= 0.130Ω
®
Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D1(8)
D1(7)
S1(1)
G1(2)
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
D2(6)
D2(5)
S2(3)
G2(4)
5
3
4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
1-888-INTERSIL or 407-727-9207
| Copyright © Intersil Corporation 1999.
RF1K49154
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
A
RF1K49154 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS= 20kΩ, Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Current Continuous (Pulse width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
DSS
DGR
GS
DM
AS
D
Refer to Peak Current Curve
D
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
60 V
60 V
±20 V
2
Refer to UIS Curve
2
0.016
-55 to 150
300
260
A
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I
DSSID
GS(TH)VGS
DSS
= 250µA, VGS = 0V, (Figure 12) 60 - - V
= VDS, ID = 250µA, (Figure 11) 2 - 4 V
VDS = 55V, VGS = 0V - - 1 µA
VDS = 50V, VGS = 0V, TC = 150oC - - 250 µA
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R
GSS
ON
OFF
g(10)
g(TH)
ISS
OSS
RSS
θJA
VGS = ±20V - - ±10 µA
= 2A, VGS = 10V, (Figures 9, 10) - - 0.130 Ω
VDD = 30V, ID≈ 2A,
RL = 15Ω, VGS = 10V,
RGS = 25Ω
(Figure 14)
r
- - 50 ns
-10-ns
-25-ns
-70-ns
f
-35-ns
- - 155 ns
= 0V to 20V VDD = 48V,
VGS = 0V to 10V - 14 17 nC
VGS = 0V to 2V - 0.8 1.0 nC
ID = 2A,
RL = 24Ω
(Figure 14)
VDS = 25V, VGS = 0V,
f = 1MHz (Figure 13)
-2632nC
- 340 - pF
- 140 - pF
-40-pF
Pulse Width = 1s
- - 62.5
o
C/W
Device Mounted on FR-4 Material
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
2
SD
rr
ISD = 2A - - 1.5 V
ISD = 2A, dISD/dt = 100A/µs--62ns
RF1K49154
Typical Performance Curves T
= 25oC, Unless Otherwise Specified
A
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
125
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWERDISSIPATIONvs AMBIENT
TEMPERATURE
5
1
0.1
, NORMALIZED
θJA
Z
0.01
THERMAL IMPEDANCE
0.001
-5
10
DUTY CYCLE
DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-4
10
-3
10
2.5
2
1.5
1
, DRAIN CURRENT (A)
D
I
0.5
0
25 50 75 100 125 150
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
-2
10
t, RECTANGULAR PULSE DURATION (s)
-1
10
0
10
TA, AMBIENT TEMPERATURE (oC)
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
1
10
θJA
10
1/t2
2
x R
θJA
+ T
A
3
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
THERMAL IMPEDANCE
10
MAY LIMIT CURRENT
IN THIS REGION
, PEAK CURRENT CAPABILITY (A)
DM
I
1
-5
10
-4
10
V
= 20V
GS
VGS = 10V
-3
10
t, PULSE WIDTH (s)
FOR TEMPERATURES
ABOVE 25
o
CURRENT AS FOLLOWS:
I = I
25
-2
10
10
20
10
1
, DRAIN CURRENT (A)
D
OPERATION IN THIS
I
AREA MAY BE
LIMITED BY r
0.1
0.1
V
DS
TJ = MAX RATED
T
= 25oC
A
5ms
10ms
DS(ON)
V
DSS (MAX)
1 10 200
= 60V
100
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
3
TA = 25oC
C DERATE PEAK
150 - T
A
125
-1
0
10
1
10
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