Intersil RF1K49093 Datasheet
RF1K49093
Data Sheet August 1999 File Number
2.5A, 12V, 0.130 Ohm, Logic Level, Dual
P-Channel LittleFET™ Power MOSFET
This Dual P-Channel power MOSFET is manufacturedusing
an advanced MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It is designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and low voltage bus switches. This product
achieves full rated conduction at a gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.
Formerly developmental type TA49093.
Ordering Information
PART NUMBER PACKAGE BRAND
RF1K49093 MS-012AA RF1K49093
NOTE: When ordering, use the entire part number. For ordering in
tape andreel, add thesuffix 96 tothe part number,i.e., RF1K4909396.
Features
• 2.5A, 12V
DS(ON)
= 0.130Ω
®
Model
•r
• Temperature Compensating PSPICE
• On-Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D1 (8)
D1 (7)
S1 (1)
G1 (2)
3969.5
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
D2 (6)
D2 (5)
S2 (3)
G2 (4)
5
3
4
8-152
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RF1K49093
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
A
RF1K49093 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS= 20kΩ, Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
-12 V
-12 V
±10 V
Drain Current
Continuous (Pulse width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
DM
AS
D
Refer to Peak Current Curve
2.5
Refer to UIS Curve
A
Power Dissipation
TA = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
2
0.016
-55 to 150
300
260
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at -5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g(-5)
g(TH)
ISS
OSS
RSS
JA
θ
= 250µA, VGS = 0V, (Figure 13) -12 - - V
= VDS, ID = 250µA, (Figure 12) -1 - -2 V
VDS = -12V,
VGS = 0V
TA = 25oC---1µA
TA = 150oC - - -50 µA
VGS = ±10V - - ±100 nA
= 2.5A, VGS = -5V, (Figure 9, 11) - - 0.130 Ω
VDD = -6V, ID≈ 2.5A,
RL = 2.40Ω, VGS = -5V,
RGS = 25Ω
(Figure 10)
- - 115 ns
-25-ns
-65-ns
-40-ns
-45-ns
- - 110 ns
= 0V to -10V VDD = -9.6V,
VGS = 0V to -5V - 10 14 nC
VGS = 0V to -1V - 0.8 1.1 nC
ID = 2.5A,
RL = 3.84Ω
(Figure 15)
VDS = -10V, VGS = 0V,
f = 1MHz (Figure 14)
-1924nC
- 775 - pF
- 550 - pF
- 150 - pF
Pulse width = 1s
- - 62.5
o
C/W
Device mounted on FR-4 material
Source to Drain Diode Ratings and Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
8-153
SD
ISD = -2.5A - - -1.25 V
ISD = -2.5A, dISD/dt = -100A/µs--55ns
rr
Typical Performance Curves
RF1K49093
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0.0
0 25 50 75 100 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
AMBIENT TEMPERATURE
10
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
1
0.01
125
-3.0
-2.5
-2.0
-1.5
-1.0
, DRAIN CURRENT (A)
D
I
-0.5
0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
P
DM
, NORMALIZED
JA
0.1
θ
Z
THERMAL IMPEDANCE
0.01
-3
10
-100
-10
-1
, DRAIN CURRENT (A)
-0.1
D
I
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
-0.01
-0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE
-2
10
-1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
TJ = MAX RATED, TA = 25oC
V
MAX = -12V
DSS
5ms
10ms
100ms
1s
DC
DS(ON)
-1 -10 -100
0
10
t, RECTANGULAR PULSE DURATION (s)
-200
-100
VGS = -10V
-10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
, PEAK CURRENT CAPABILITY (A)
IN THIS REGION
DM
I
-1
-5
10
1
10
VGS = -5V
-4
10
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
2
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
I = I
-3
10
-2
10
t, PULSE WIDTH (s)
t
1
t
2
1/t2
x R
JA
θ
θ
o
C DERATE PEAK
150 - T
25
-1
10
JA
125
+ T
A
3
10
A
TA = 25oC
0
10
1
10
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
8-154
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