Intersil RF1K49092 Datasheet

RF1K49092

Data Sheet August 1999 File Number

3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET™ Power MOSFET

This complementary power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and low voltage bus switches. This product achieves full rated conduction at a gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49092.

Ordering Information

PART NUMBER PACKAGE BRAND

RF1K49092 MS-012AA RF1K49092

NOTE: When ordering, use the entire part number. For ordering in tape andreel, add the suffix 96 to the partnumber, i.e .,RF1K4909296.

Features

• 3.5A, 12V (N-Channel)

2.5A, 12V (P-Channel)

•r r

• Temperature Compensating PSPICE

= 0.050Ω (N-Channel)

DS(ON)

= 0.130Ω (P-Channel)

DS(ON)

Model

• On-Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D1 (8) D1 (7)

S1 (1)

G1 (2)

3968.5

Packaging

JEDEC MS-012AA

BRANDING DASH

D2 (6) D2 (5)

S2 (3)

G2 (4)

9-3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

RF1K49092

Absolute Maximum Ratings T

= 25oC Unless Otherwise Speciﬁed

N-CHANNEL P-CHANNEL UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS= 20kΩ, Note 1). . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

12 -12 V 12 -12 V

±10 ±10 V

Drain Current

Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . .I

Pulsed (Figures 5, 26) . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Avalanche Rating (Figures 6, 27). . . . . . . . . . . . . E

Refer to Peak Current Curve

3.5

2.5

Refer to Peak Current Curve

Refer to UIS Curve Refer to UIS Curve

Power Dissipation

TA = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

pkg

0.016

-55 to 150 -55 to 150

300 260

W/oC

NOTE:

1. TJ = 25oC to 125oC.

N-Channel Electrical Speciﬁcations T

= 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t Turn-On Delay Time t

d(ON)

Rise Time t Turn-Off Delay Time t

d(OFF)

Fall Time t Turn-Off Time t Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q Threshold Gate Charge Q

Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

OFF

g(5)

g(TH)

ISS OSS RSS

= 250µA, VGS = 0V, (Figure 13) 12 - - V

= VDS, ID = 250µA, (Figure 12) 1 - 2 V

VDS = 12V, VGS = 0V

TA = 25oC--1µA TA = 150oC--50µA

VGS = ±10V - - ±100 nA

= 3.5A, VGS = 5V, (Figures 9, 11) - - 0.050 Ω

VDD = 6V, ID≈ 3.5A, RL = 1.71Ω, VGS = 5V, RGS = 25Ω (Figure 10)

- - 100 ns

-18-ns

-60-ns

-50-ns

-60-ns

- - 140 ns

= 0V to 10V VDD = 9.6V, VGS = 0V to 5V - 12 15 nC VGS = 0V to 1V - 0.9 1.2 nC

ID = 3.5A, RL = 2.74Ω (Figure 15)

VDS = 10V, VGS = 0V, f = 1MHz (Figure 14)

-2025nC

- 750 - pF

- 700 - pF

- 275 - pF

Pulse width = 1s

- - 62.5

C/W

Device mounted on FR-4 material

N-Channel Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Voltage V Reverse Recovery Time t

9-4

ISD = 3.5A - - 1.25 V ISD = 3.5A, dISD/dt = 100A/µs--70ns

RF1K49092

P-Channel Electrical Speciﬁcations T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV Gate Threshold Voltage V Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I Drain to Source On Resistance r Turn-On Time t Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t Turn-Off Time t Total Gate Charge Q Gate Charge at -5V Q Threshold Gate Charge Q Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Thermal Resistance Junction-to-Ambient R

= 25oC, Unless Otherwise Speciﬁed

DSSID

GS(TH)VGS

DSS

GSS

DS(ON)ID

= 250µA, VGS = 0V, (Figure 34) -12 - - V

= VDS, ID = 250µA, (Figure 33) -1 - -2 V VDS = -12V,

VGS = 0V

TA = 25oC---1µA TA = 150oC - - -50 µA

VGS = ±10V - - ±100 nA

= 2.5A, VGS = -5V - - 0.130 Ω

VDD = -6V, ID≈ 2.5A, RL = 2.40Ω, VGS = -5V,

d(ON)

d(OFF)

OFF

g(TOT)VGS

g(-5)

g(TH)

ISS

RGS = 25Ω (Figure 31)

= 0V to -10V VDD = -9.6V, VGS = 0V to -5V - 10 14 nC VGS = 0V to -1V - 0.8 1.1 nC

ID = 2.5A, RL = 3.84Ω (Figure 36)

VDS = -10V, VGS = 0V, f = 1MHz (Figure 35)

OSS RSS

θJA

Pulse width = 1s Device mounted on FR-4 material

- - 115 ns

-25-ns

-65-ns

-40-ns

-45-ns

- - 110 ns

-1924nC

- 775 - pF

- 550 - pF

- 150 - pF

- - 62.5

C/W

P-Channel Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Voltage V Reverse Recovery Time t

ISD = -2.5A - - -1.25 V ISD = -2.5A, dISD/dt = -100A/µs--55ns

Typical Performance Curves (N-Channel)

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0 0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vsAMBIENT

TEMPERATURE

125

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

1.0

0.5

0.0 25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUSDRAIN CURRENTvs

AMBIENT TEMPERATURE

9-5

RF1K49092

Typical Performance Curves (N-Channel)

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

, NORMALIZED

0.1

THERMAL IMPEDANCE

SINGLE PULSE

0.01

100

-3

-2

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

-1

t, RECTANGULAR PULSE DURATION (s)

TJ = MAX RATED

= 25oC

MAX = 12V

DSS

5ms 10ms

100ms

(Continued)

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

200

100

TA = 25oC

FOR TEMPERATURES ABOVE 25 CURRENT AS FOLLOWS:

I = I

VGS = 5V

1/t2

x R

C DERATE PEAK

150 - T

125

+ T

, DRAIN CURRENT (A)

0.1

OPERATION IN THIS AREA MAY BE LIMITED BY r

0.01

0.1 VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

1 10 100

, PEAK CURRENT CAPABILITY (A)

-5

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-4

-3

t, PULSE WIDTH (s)

-2

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

If R = 0

, AVALANCHE CURRENT (A)

tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0 t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

0.1 tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC

STARTING TJ = 150oC

- VDD)

DSS

- VDD) +1]

DSS

1 10 100

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

= 10V

VGS = 5V

= 4.5V

= 4V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TA = 25oC

2345

NOTE: Refer to Intersil Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

FIGURE 7. SATURATION CHARACTERISTICS

-1

= 3V

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