Intersil RF1K49088 Datasheet

RF1K49088

Data Sheet August 1999 File Number

3.5A, 30V, 0.06 Ohm, Logic Level, Dual
N-Channel LittleFET™ Power MOSFET

This Dual N-Channel powerMOSFETismanufacturedusing
an advanced MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It is designed for use in applications such as
switching regulators, switching converters, motor drivers,
relay drivers, and low voltage bus switches. This product
achieves full rated conduction at a gate bias in the 3V - 5V
range, thereby facilitating true on-off power control directly
from logic level (5V) integrated circuits.

Formerly developmental type TA49088.

Ordering Information

PART NUMBER PACKAGE BRAND

RF1K49088 MS-012AA RF1K49088

NOTE: When ordering, use the entire part number. For ordering in
tape andreel, add the suffix 96 to the partnumber ,i.e.,RF1K4908896.

Features

• 3.5A, 30V

DS(ON)

= 0.060Ω

®

Model

•r

• Temperature Compensating PSPICE

• On-Resistance vs Gate Drive Voltage Curves

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D1(8)
D1(7)

S1(1)

G1(2)

3952.5

Packaging

JEDEC MS-012AA

BRANDING DASH

1

2

D2(6)
D2(5)

S2(3)

G2(4)

5

3

4

8-94

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RF1K49088

Absolute Maximum Ratings T

= 25oC Unless Otherwise Specified

A

RF1K49088 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS= 20kΩ, Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

GS

30 V
30 V

±10 V

Drain Current

Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

DM

AS

D

Refer to Peak Current Curve

3.5

Refer to UIS Curve

A

Power Dissipation

TA = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

2

0.016

-55 to 150

300
260

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance r

DS(ON)ID

Turn-On Time t
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Turn-Off Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 5V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction-to-Ambient R

DSSID

DSS

GSS

ON

r

f

OFF

g(5)

g(TH)

ISS
OSS
RSS

JA

θ

= 250µA, VGS = 0V, (Figure 13) 30 - - V

= VDS, ID = 250µA, (Figure 12) 1 - 2 V

VDS = 30V,
VGS = 0V

TA = 25oC--1µA
TA = 150oC--50µA

VGS = ±10V - - ±100 nA

= 3.5A, VGS = 5V, (Figures 9, 11) - - 0.060 Ω

VDD = 15V, ID≈ 3.5A,
RL = 4.29Ω, VGS = 5V,
RGS = 25Ω
(Figure 10)

- - 100 ns

-18-ns

-60-ns

-53-ns

-47-ns

- - 125 ns

= 0V to 10V VDD = 24V,
VGS = 0V to 5V - 13 17 nC
VGS = 0V to 1V - 0.8 1.0 nC

ID = 3.5A,
RL = 6.86Ω
(Figure 15)

VDS = 25V, VGS = 0V,
f = 1MHz (Figure 14)

-2430nC

- 750 - pF

- 275 - pF

- 100 - pF

Pulse width = 1s

- - 62.5

o

C/W

Device mounted on FR-4 material

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t

8-95

SD

rr

ISD = 3.5A - - 1.25 V ISD = 3.5A, dISD/dt = 100A/µs--50ns

Typical Performance Curves

RF1K49088

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

10

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

, NORMALIZED

JA

0.1

θ

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.01

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION (s)

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

1.0

D

I

0.5
0

25

50

75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0

10

1

10

10

2

1/t2

x R

JA

JA

θ

θ

2

+ T

A

3

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

100

10

1

, DRAIN CURRENT (A)

D

0.1

OPERATION IN THIS

I

AREA MAY BE
LIMITED BY r

0.01

0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)

TJ = MAX RATED

= 25oC

T

A

DS(ON)

V

DSS(MAX)

= 30V

1 10 100

5ms

10ms

100ms

1s

DC

200

100

10

, PEAK CURRENT CAPABILITY (A)

DM

I

1

-5

10

VGS = 10V

VGS = 5V

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

-3

10

t, PULSE WIDTH (s)

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

25

-2

10

10

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY

8-96

o

C DERATE PEAK

150 - T

A

125

TA = 25oC

-1

0

10

1

10