Intersil RF1K49086 Datasheet
RF1K49086
Data Sheet August 1999 File Number
3.5A, 30V, 0.06 Ohm, Dual N-Channel
LittleFET™ Power MOSFET
This Dual N-Channel powerMOSFETismanufacturedusing
an advanced MegaFET process. This process, which uses
feature sizes approaching those of LSI integrated circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. It is designed for use in applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and low voltage bus switches. This device can
be operated directly from integrated circuits.
Formerly developmental type TA49086.
Ordering Information
PART NUMBER PACKAGE BRAND
RF1K49086 MS-012AA RF1K49086
NOTE: When ordering, use the entire part number. For ordering in
tape andreel, add the suffix 96 to the partnumber ,i.e.,RF1K4908696.
Features
• 3.5A, 30V
DS(ON)
= 0.060Ω
®
Model
•r
• Temperature Compensating PSPICE
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D1(8)
D1(7)
S1(1)
G1(2)
3986.5
Packaging
JEDEC MS-012AA
BRANDING DASH
1
2
D2(6)
D2(5)
S2(3)
G2(4)
5
3
4
8-87
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
LittleFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
RF1K49086
Absolute Maximum Ratings T
= 25oC Unless Otherwise Specified
A
RF1K49086 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS= 20kΩ, Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
DGR
GS
30 V
30 V
±20 V
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
DM
AS
D
Refer to Peak Current Curve
3.5
Refer to UIS Curve
A
Power Dissipation
TA = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
2
0.016
-55 to 150
300
260
W
W/oC
o
C
o
C
o
C
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance r
DS(ON)ID
Turn-On Time t
Turn-On Delay Time t
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Turn-Off Time t
Total Gate Charge Q
g(TOT)VGS
Gate Charge at 10V Q
Threshold Gate Charge Q
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
ON
r
f
OFF
g(10)
g(TH)
ISS
OSS
RSS
θJA
= 250µA, VGS = 0V, (Figure 12) 30 - - V
= VDS, ID = 250µA, (Figure 11) 1 - 3 V
VDS = 30V,
VGS = 0V
TA = 25oC--1µA
TA = 150oC--50µA
VGS = ±20V - - ±100 nA
= 3.5A
(Figures 9, 10)
VDD = 15V, ID≈ 3.5A,
RL = 4.29Ω, VGS = 10V,
RGS = 25Ω
VGS = 10V - - 0.060 Ω
VGS = 4.5V - - 0.132 Ω
- - 50 ns
-10-ns
-30-ns
-60-ns
-45-ns
- - 130 ns
= 0V to 20V VDD = 24V,
VGS = 0V to 10V - 13 17 nC
VGS = 0V to 2V - 2.3 2.9 nC
ID = 3.5A,
RL = 6.86Ω
(Figure 14)
VDS = 25V, VGS = 0V,
f = 1MHz (Figure 13)
-3545nC
- 575 - pF
- 275 - pF
- 100 - pF
Pulse Width = 1s
- - 62.5
o
C/W
Device mounted on FR-4 material
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
8-88
SD
rr
ISD = 3.5A - - 1.25 V
ISD = 3.5A, dISD/dt = 100A/µs--45ns
Typical Performance Curves
RF1K49086
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0.0
0 25 50 75 100 150
125
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
10
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
, NORMALIZED
JA
0.1
θ
Z
THERMAL IMPEDANCE
SINGLE PULSE
0.01
-3
10
-2
10
-1
10
t, RECTANGULAR PULSE DURATION (s)
4.0
3.5
3.0
2.5
2.0
1.5
, DRAIN CURRENT (A)
1.0
D
I
0.5
0.0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
P
DM
t
1
t
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
0
10
1
10
10
2
1/t2
x R
JA
JA
θ
θ
2
+ T
A
3
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
10
1
, DRAIN CURRENT (A)
D
0.1
OPERATION IN THIS
I
AREA MAY BE
LIMITED BY r
0.01
0.1
VDS, DRAIN TO SOURCE VOLTAGE (V)
TJ = MAX RATED
= 25oC
T
A
DS(ON)
V
DSS(MAX)
= 30V
1 10 100
5ms
10ms
100ms
1s
DC
200
100
VGS = 10V
10
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
, PEAK CURRENT CAPABILITY (A)
DM
I
1
-5
10
TA = 25oC
FOR TEMPERATURES
ABOVE 25
o
CURRENT AS FOLLOWS:
I = I
25
-4
10
-3
10
-2
10
10
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
8-89
C DERATE PEAK
150 - T
A
125
-1
0
10
1
10
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