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)
bb (reverse)
)
L(SCr)
L(ISO)
Smart Highside Power Switch
PROFET® BTS 432 F2
Features
1
•
Load dump and reverse battery protection
•
Clamp of negative voltage at output
•
Short-circuit protection
•
Current limitation
•
Thermal shutdown
•
Diagnostic feedback
•
Open load detection in ON-state
•
CMOS compatible input
•
Electrostatic discharge (ESD) protection
•
Loss of ground and loss of V
•
Overvoltage protection
•
Undervoltage and overvoltage shutdown with auto-
protection
bb
)
2)
restart and hysteresis
Application
•
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
•
Most suitable for inductive loads
•
Replaces electromechanical relays and discrete circuits
Product Summary
V
Load dump
V
-
V
bb
V
bb (operation
Avalanche Clamp 58 V
OUT
V
R
ON
I
L(SCp
I
I
5
1
Straight leads
SMD
80 V
4.5 ... 42 V
-32 V
38
21 A
10 A
11 A
5
1
Standard
mΩ
1
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
5
Voltage
source
V
Logic
Voltage
sensor
IN
2
ESD
4
ST
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
GND
Current
limit
unclamped
Open load
Short circuit
Gate
protection
Limit for
ind. loads
detection
detection
Temperature
sensor
1
Signal GND
1)
No external components required, reverse load current limited by connected load.
2)
Additional external diode required for charged inductive loads
R
bb
PROFET
+ V
bb
OUT
Load GND
3
5
Load
Infineon Technologies AG 1 22.03.99
PROFET® BTS 432 F2
V
U
V
U
R
R
t
T
E
)
Pin Symbol Function
1 GND - Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3Vbb+ Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5 OUT
O Output to the load
(Load, L)
Maximum Ratings at T
j = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3)
Load dump protection
= 2 Ω,
I
= 1.1 Ω,
L
LoadDump
= 200 ms, IN= low or high
d
=
+
,
s
= 13.5 V
A
A
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
V
V
I
T
T
P
bb
3
)
s
L
j
stg
tot
self-limited A
-40 ...+150
-55 ...+150
63 V
66.5 V
°C
125 W
Inductive load switch-off energy dissipation,
single pulse
Electrostatic discharge capability (ESD
=150 °C:
j
V
AS
ESD
1.7 J
2.0 kV
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
V
I
I
IN
ST
IN
-0.5 ... +6 V
±5.0
mA
±5.0
Thermal resistance chip - case:
junction - ambient (free air):
R
R
thJC
thJA
≤ 1
≤ 75
K/W
SMD version, device on pcb4): ≤ tbd
3)
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
4)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB is vertical without blown air.
2
(one layer, 70µm thick) copper area for V
bb
Infineon Technologies AG 2 22.03.99
PROFET® BTS 432 F2
j
V
R
T
T
V
V
V
)
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C,
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
I
= 2 A
L
Nominal load current (pin 3 to 5)
ISO Proposal:
Output current (pin 5) while GND disconnected or
GND pulled up, V
T
=-40...+150°C
Turn-on time to 90%
Turn-off time to 10%
R
= 12 Ω,
L
Slew rate on
10 to 30%
Slew rate off
70 to 40%
V
= 12 V unless otherwise specified
bb
V
= 0.5 V,
ON
= 0, see diagram page 7,
IN
T
=-40...+150°C
j
V
,
R
,
= 12 Ω,
L
= 12 Ω,
L
OUT
OUT
T
= 85 °C
C
T
=-40...+150°C
j
=-40...+150°C
j
T
=25 °C:
j
T
=150 °C:
j
V
V
OUT
OUT
:
:
R
I
I
t
t
d
-dV/dt
ON
L(ISO)
L(GNDhigh)
on
off
V
/dt
on
off
min typ max
-- 30
55
38
70
mΩ
911 --A
-- -- 1 mA
50
10
160
300
--
80
µs
0.4 -- 2.5 V/µs
1--5V/µs
Operating Parameters
Operating voltage
Undervoltage shutdown
Undervoltage restart
5)
T
j
T
j
T
j
Undervoltage restart of charge pump
see diagram page 12
j
Undervoltage hysteresis
∆
bb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection
I
bb
=
=40 mA
bb(u rst)
-
bb(under)
6)
T
j
T
j
T
j
T
Standby current (pin 3)
VIN=0
Leakage output current (included in
VIN=0
Operating current (Pin 1)7),
5)
6)
)
7
V
At supply voltage increase up to
see also
Add
V
I
, if
ST
in table of protection functions and circuit diagram page 7. Meassured without load.
ON(CL)
I
> 0, add
ST
I
, if
V
IN
=5 V
IN
V
= 6.5 V typ without charge pump,
bb
>5.5 V
IN
=-40...+150°C:
=-40...+150°C:
=-40...+150°C:
=-40...+150°C:
=-40...+150°C:
=-40...+150°C:
=-40...+150°C: ∆
T
=-40°C:
j
=25...+150°C:
j
T
=-40...+25°C:
j
T
=150°C:
j
I
)
bb(off
V
bb(on)
V
bb(under)
V
bb(u rst)
V
bb(ucp)
∆
V
bb(under)
V
bb(over)
V
bb(o rst)
V
bb(over)
V
bb(AZ)
I
bb(off)
I
L(off)
I
GND
V
4.5 -- 42 V
2.4 -- 4.5 V
-- -- 4.5 V
-- 6.5 7.5 V
-- 0.2 -- V
42 -- 52 V
42 -- -- V
-- 0.2 -- V
60
63
--
--
--
67
12
18
-- 6 -- µA
-- 1.1 -- mA
≈
V
OUT
bb
- 2 V
-- V
25
60
µA
Infineon Technologies AG 3 22.03.99
PROFET® BTS 432 F2
)
T
j
T
j
T
V
V
T
t
)
I
V
V
T
j
T
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C,
Protection Functions
Initial peak short circuit current limit (pin 3 to 5
( max 400 µs if VON > V
Repetitive short circuit current limit
T
j
Short circuit shutdown delay after input pos. slope
>
ON
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off
at V
OUT
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis ∆
Inductive load switch-off energy dissipation9),
T
j Start
Reverse battery (pin 3 to 1)
Integrated resistor in Vbb line
V
= 12 V unless otherwise specified
bb
8)
,
I
L(SCp)
ON(SC)
)
=-40°C:
=25°C:
=+150°C:
j
I
L(SCr)
=
T
(see timing diagrams, page 10) 610 --A
jt
,
ON(SC)
= Vbb - V
ON(CL)
= 30 mA
,
L
= 150 °C, single pulse
10)
=-40..+150°C:
j
V
= 12 V:
bb
V
= 24 V:
bb
d(SC)
ON(CL)
ON(SC)
T
jt
T
E
AS
E
Load12
E
Load24
-
V
bb
R
bb
jt
min typ max
--
-7
--
21
--
35
--
--
80 -- 400 µs
-- 58 -- V
-- 8.3 -- V
150 -- -- °C
-- 10 -- K
-- -- 1.7
1.3
1.0
-- -- 32 V
-- 120 -- Ω
A
J
Diagnostic Characteristics
Open load detection current
(on-condition)
8)
Short circuit current limit for max. duration of 400 µs, prior to shutdown (see t
9)
While demagnetizing load inductance, dissipated energy in PROFET is
V
2
E
= 1/
AS
2
10)
Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
these condition is dependent on the size of the heatsink. Reverse I
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
L
*
I
*
L
ON(CL)
* (
V
ON(CL)
of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
GND
), see diagram page 8
-
V
bb
=-40 °C:
=25..150°C:
j
I
L (OL)
2
2
d(SC)
E
= ∫
V
AS
can be reduced by an additional
GND
ON(CL)
page 4)
*
--
--
i
(t) dt, approx.
L
900
750
mA
Infineon Technologies AG 4 22.03.99
PROFET® BTS 432 F2
T
T
Parameter and Conditions Symbol Values Unit
at Tj = 25 °C,
V
= 12 V unless otherwise specified
bb
min typ max
Input and Status Feedback
Input turn-on threshold voltage
Input turn-off threshold voltage
11)
=-40..+150°C:
j
=-40..+150°C:
j
V
V
Input threshold hysteresis ∆
Off state input current (pin 2)
On state input current (pin 2)
Status invalid after positive input slope
(short circuit)
T
Status invalid after positive input slope
(open load)
T
V
= 0.4 V:
IN
V
= 3.5 V:
IN
=-40 ... +150°C:
j
=-40 ... +150°C:
j
I
I
t
t
Status output (open drain)
Zener limit voltage
ST low voltage
T
=-40...+150°C,
j
T
=-40...+150°C,
j
I
= +1.6 mA:
ST
I
= +1.6 mA:
ST
V
V
IN(T+)
IN(T-)
V
IN(T)
IN(off)
IN(on)
d(ST SC)
d(ST)
ST(high)
ST(low)
1.5 -- 2.4 V
1.0 -- -- V
-- 0.5 -- V
1--30µA
10 25 50 µA
80 200 400 µs
350 -- 1600 µs
5.4
--
6.1
--
--
0.4
V
11)
If a ground resistor R
is used, add the voltage drop across this resistor.
GND
Infineon Technologies AG 5 22.03.99
Truth Table
PROFET® BTS 432 F2
Input- Output Status
Normal
operation
Open load L
Short circuit
to GND
Short circuit
to V
bb
Overtemperature
Undervoltage
Overvoltage L
L = "Low" Level
H = "High" Level
Terms
I
IN
2
I
ST
V
IN
V
bb
4
V
ST
level level 432
D2
H (L
L
L
I
L
5
H
H
H
L
H
L
H
L
L
14)
14)
L
L
IN
ST
L
H
H
L
H
L
H
L
H
L
H
12
L
H
)
H
L
L
H
H
L
L
L
L
L
H
R
GND
I
bb
3
V
bb
PROFET
GND
1
L
I
GND
OUT
13)
432
E2/F2
H
H
H
L
H
L
H
H (L
13)
)
L
L
H
H
H
H
432
I2
H
H
L
H
H
L
L
)
H
L
L
14)
L
14)
L
L
L
Status output
+5V
R
V
V
ON
OUT
ST(ON)
GND
ESD-Zener diode: 6.1 V typ., max 5 mA;
R
< 250 Ω at 1.6 mA, ESD zener diodes are not
ST(ON)
designed for continuous current
ST
ESDZD
Input circuit (ESD protection)
R
IN
ZDI1 6.1 V typ., ESD zener diodes are not designed for
continuous current
12)
Power Transistor off, high impedance
13)
Low resistance short
14)
No current sink capability during undervoltage shutdown
I
ESD-
ZD ZD
I1 I2
GND
V
bb
I
I
to output may be detected by no-load-detection
Short Circuit detection
Fault Condition:
Logic
unit
V
> 8.3 V typ.; IN high
ON
Short circuit
detection
+ V
OUT
bb
V
ON
Infineon Technologies AG 6 22.03.99
PROFET® BTS 432 F2
Inductive and overvoltage output clamp
+ V
bb
V
Z
V
ON
OUT
GND
VON clamped to 58 V typ.
Overvolt. and reverse batt. protection
+ V
R
bb
V
R
IN
IN
Logic
ST
R
ST
Z
V
OUT
GND
PROFET
GND disconnect
3
V
IN
2
ST
4
V
V
bb
V
IN
ST
Any kind of load. In case of Input=high is V
Due to V
>0, no VST = low signal available.
GND
bb
PROFET
GND
1
V
GND
OUT
OUT
5
≈ VIN - V
IN(T+)
.
GND disconnect with GND pull up
bb
3
V
IN
2
ST
4
bb
PROFET
GND
1
OUT
5
R
GND
Signal GND
Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add
, RIN, RST for extended protection
R
GND
Open-load detection
ON-state diagnostic condition:
high
ON
Logic
unit
Open load
detection
V
ON
< R
ON
* I
L(OL)
+ V
OUT
; IN
bb
V
ON
V
V
bb
V
Any kind of load. If V
Due to V
>0, no VST = low signal available.
GND
ST
IN
>
VIN - V
GND
V
GND
device stays off
IN(T+)
Vbb disconnect with charged inductive
load
3
high
V
bb
high
IN
2
ST
4
IN
2
ST
4
V
bb
PROFET
GND
1
3
V
bb
PROFET
GND
1
OUT
OUT
5
5
V
bb
Infineon Technologies AG 7 22.03.99
Inductive Load switch-off energy
dissipation
E
bb
E
V
IN
bb
AS
E
PROFET® BTS 432 F2
Load
PROFET
=
ST
GND
OUT
E
Energy dissipated in PROFET EAS = Ebb + EL - ER.
E
Load
<
1
E
,
L
/
E
=
2
L
* L *
2
I
L
E
L
R
Infineon Technologies AG 8 22.03.99
PROFET® BTS 432 F2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type BTS
Logic version
Overtemperature protection
15)16
>150 °C, latch function
T
j
T
>150 °C, with auto-restart on cooling
j
)
Short-circuit to GND protection
switches off when
(when first turned on after approx. 200 µs)
V
>8.3 V typ.
ON
15)
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
Undervoltage shutdown with auto restart
Overvoltage shutdown with auto restart
Status feedback for
overtemperature
short circuit to GND
short to V
open load
undervoltage
overvoltage
bb
Status output type
CMOS
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - V
ON(CL)
Load current limit
high level (can handle loads with high inrush currents)
medium level
low level
(better protection of application)
432D2 432E2 432F2 432I2
DEF I
X
X
XXX X
XXX
XXX X
XXX X
X
X
17)
X
X
X
X
XXX X
XX
X
X
17)
X
-
-
X X
X X
X
X
17)
X
-
-
X
X
X
X
X
X
X
X
X
X
15)
Latch except when
0 V only if forced externally). So the device remains latched unless
between turn on and t
16)
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
17)
Low resistance short
V
-
V
bb
OUT
.
d(SC)
V
to output may be detected by no-load-detection
bb
<
V
ON(SC)
after shutdown. In most cases
V
bb
<
V
= 0 V after shutdown (
OUT
V
ON(SC)
(see page 4). No latch
V
OUT
Infineon Technologies AG 9 22.03.99
≠
Timing diagrams
PROFET® BTS 432 F2
Figure 1a: Vbb turn on:
IN
t
V
V
bb
OUT
d(bb IN)
A
ST open drain
A
in case of too early VIN=high the device may not turn on (curve A)
t
approx. 150 µs
d(bb IN)
Figure 3a: Turn on into short circuit,
IN
ST
V
OUT
t
d(SC)
I
L
t
t
approx. 200µs if Vbb - V
d(SC)
> 8.3 V typ.
OUT
t
Figure 2a: Switching an inductive load
IN
d(ST)
t
ST
*)
V
OUT
I
L
I
L(OL)
*) if the time constant of load is too large, open-load-status may
occur
Figure 3b: Turn on into overload,
IN
I
L
I
L(SCp)
I
L(SCr)
ST
t
Heating up may require several milliseconds , Vbb - V
typ.
OUT
t
< 8.3 V
Infineon Technologies AG 10 22.03.99
PROFET® BTS 432 F2
Figure 3c: Short circuit while on:
IN
ST
V
OUT
I
L
**) current peak approx. 20 µs
**)
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
t
ST
d(ST)
V
OUT
I
L
open
t
t
Figure 4a: Overtemperature,
T
<
T
Reset if (IN=low) and (
)
j
jt
IN
ST
V
OUT
T
J
*) ST goes high , when VIN=low and Tj<T
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
t
d(ST OL1)
t
d(OL ST2)
ST
V
OUT
I
normal
L
open
t
jt
t
d(ST OL1)
= tbd µs typ., t
d(ST OL2)
= tbd µs typ
normal
t
Infineon Technologies AG 11 22.03.99
PROFET® BTS 432 F2
Figure 6a: Undervoltage:
IN
V
bb
V
OUT
ST open drain
V
bb(under)
V
bb(u cp)
V
bb(u rst)
Figure 7a: Overvoltage:
IN
V
bb
V
OUT
ST
t
V
ON(CL)
V
bb(over)
V
bb(o rst)
t
Figure 6b: Undervoltage restart of charge pump
[V]
V
ON
V
V
on
ON(CL)
off
V
V
bb(o rst)
bb(over)
off
V
bb(u rst)
V
V
bb(under)
charge pump starts at V
bb(u cp)
bb(ucp)
on
=6.5 V typ.
V
bb
V
[V]
bb
Infineon Technologies AG 12 22.03.99
Package and Ordering Code
All dimensions in mm
PROFET® BTS 432 F2
Standard TO-220AB/5 Ordering code
BTS 432 F2 Q67060-S6203-A2
TO-220AB/5, Option E3043 Ordering code
BTS 432 F2 E3043 Q67060-S6203-A4
SMD TO-220AB/5, Opt. E3062 Ordering code
BTS432F2 E3062A T&R: Q67060-S6203-A6
Infineon Technologies AG 13 22.03.99
PROFET® BTS 432 F2
Edition 22.03.99
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2000.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address
list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Infineon Technologies AG 14 22.03.99
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