intersil PROFETBTS432F2 DATA SHEET

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)

bb (reverse)

)

L(SCr)

L(ISO)

Smart Highside Power Switch

PROFET® BTS 432 F2

Features

1

•

Load dump and reverse battery protection

•

Clamp of negative voltage at output

•

Short-circuit protection

•

Current limitation

•

Thermal shutdown

•

Diagnostic feedback

•

Open load detection in ON-state

•

CMOS compatible input

•

Electrostatic discharge (ESD) protection

•

Loss of ground and loss of V

•

Overvoltage protection

•

Undervoltage and overvoltage shutdown with auto-

protection

bb

)

2)

restart and hysteresis

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

•

Most suitable for inductive loads

•

Replaces electromechanical relays and discrete circuits

Product Summary

V

Load dump

V

-

V

bb

V

bb (operation

Avalanche Clamp 58 V

OUT

V R

ON

I

L(SCp

I I

5

1

Straight leads

SMD

80 V

4.5 ... 42 V

-32 V 38

21 A 10 A 11 A

5

1

Standard

mΩ

1

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection functions.

5

Voltage source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

unclamped

Open load

Short circuit

Gate

protection

Limit for

ind. loads

detection

Temperature

sensor

1

Signal GND

1)

No external components required, reverse load current limited by connected load.

2)

Additional external diode required for charged inductive loads

R

bb

PROFET

+ V

bb

OUT



Load GND

3

5

Load

Infineon Technologies AG 1 22.03.99

PROFET® BTS 432 F2

V

U

V

U

R

t

T

E

)

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3Vbb+ Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

Maximum Ratings at T

j = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Load dump protection

= 2 Ω,

I

= 1.1 Ω,

L

LoadDump

= 200 ms, IN= low or high

d

=

+

,

s

= 13.5 V

A

Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC)

V V

I T T P

bb

3

)

s

L

j

stg

tot

self-limited A

-40 ...+150

-55 ...+150

63 V

66.5 V

°C

125 W

Inductive load switch-off energy dissipation, single pulse

Electrostatic discharge capability (ESD

=150 °C:

j

V

AS

ESD

1.7 J

2.0 kV

(Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6...

V I I

IN

ST

IN

-0.5 ... +6 V

±5.0

mA

±5.0

Thermal resistance chip - case:

junction - ambient (free air):

R R

thJC

thJA

≤ 1

≤ 75

K/W

SMD version, device on pcb4): ≤ tbd

3)

VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839

4)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm connection. PCB is vertical without blown air.

2

(one layer, 70µm thick) copper area for V

bb

Infineon Technologies AG 2 22.03.99

PROFET® BTS 432 F2

j

V

R

T

V

)

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C,

Load Switching Capabilities and Characteristics

On-state resistance (pin 3 to 5) I

= 2 A

L

Nominal load current (pin 3 to 5) ISO Proposal: Output current (pin 5) while GND disconnected or

GND pulled up, V

T

=-40...+150°C

Turn-on time to 90% Turn-off time to 10%

R

= 12 Ω,

L

Slew rate on 10 to 30% Slew rate off

70 to 40%

V

= 12 V unless otherwise specified

bb

V

= 0.5 V,

ON

= 0, see diagram page 7,

IN

T

=-40...+150°C

j

V

,

R

,

= 12 Ω,

L

= 12 Ω,

L

OUT

T

= 85 °C

C

T

=-40...+150°C

j

=-40...+150°C

j

T

=25 °C:

j

T

=150 °C:

j

V V

OUT

: :

R

I

t t

d

-dV/dt

ON

L(ISO)

L(GNDhigh)

on

off

V

/dt

on

off

min typ max

-- 30 55

38 70

mΩ

911 --A

-- -- 1 mA

50 10

160

300

--

80

µs

0.4 -- 2.5 V/µs

1--5V/µs

Operating Parameters

Operating voltage Undervoltage shutdown Undervoltage restart

5)

T

j

T

j

T

j

Undervoltage restart of charge pump see diagram page 12

j

Undervoltage hysteresis

∆

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Overvoltage protection

I

bb

=

=40 mA

bb(u rst)

-

bb(under)

6)

T

j

T

j

T

j

T

Standby current (pin 3) VIN=0

Leakage output current (included in

VIN=0

Operating current (Pin 1)7),

5)

6)

)

7

V

At supply voltage increase up to see also Add

V

I

, if

ST

in table of protection functions and circuit diagram page 7. Meassured without load.

ON(CL)

I

> 0, add

ST

I

, if

V

IN

=5 V

IN

V

= 6.5 V typ without charge pump,

bb

>5.5 V

IN

=-40...+150°C: =-40...+150°C: =-40...+150°C:

=-40...+150°C:

=-40...+150°C: =-40...+150°C: =-40...+150°C: ∆

T

=-40°C:

j

=25...+150°C:

j

T

=-40...+25°C:

j

T

=150°C:

j

I

)

bb(off

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

∆

V

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

V

bb(AZ)

I

bb(off)

I

L(off)

I

GND

V

4.5 -- 42 V

2.4 -- 4.5 V

-- -- 4.5 V

-- 6.5 7.5 V

-- 0.2 -- V

42 -- 52 V 42 -- -- V

-- 0.2 -- V

60 63

--

67 12

18

-- 6 -- µA

-- 1.1 -- mA

≈

V

OUT

bb

- 2 V

-- V

25 60

µA

Infineon Technologies AG 3 22.03.99

PROFET® BTS 432 F2

)

T

j

T

j

T

V

T

t

)

I

V

T

j

T

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C,

Protection Functions

Initial peak short circuit current limit (pin 3 to 5 ( max 400 µs if VON > V

Repetitive short circuit current limit

T

j

Short circuit shutdown delay after input pos. slope

>

ON

min value valid only, if input "low" time exceeds 30 µs

Output clamp (inductive load switch off at V

OUT

Short circuit shutdown detection voltage (pin 3 to 5)

Thermal overload trip temperature Thermal hysteresis ∆ Inductive load switch-off energy dissipation9),

T

j Start

Reverse battery (pin 3 to 1) Integrated resistor in Vbb line

V

= 12 V unless otherwise specified

bb

8)

,

I

L(SCp)

ON(SC)

)

=-40°C:

=25°C:

=+150°C:

j

I

L(SCr)

=

T

(see timing diagrams, page 10) 610 --A

jt

,

ON(SC)

= Vbb - V

ON(CL)

= 30 mA

,

L

= 150 °C, single pulse

10)

=-40..+150°C:

j

V

= 12 V:

bb

V

= 24 V:

bb

d(SC)

ON(CL)

ON(SC)

T

jt

T

E

AS

E

Load12

E

Load24

-

V

bb

R

bb

jt

min typ max

--

-7

--

21

--

35

--

80 -- 400 µs

-- 58 -- V

-- 8.3 -- V

150 -- -- °C

-- 10 -- K

-- -- 1.7

1.3

1.0

-- -- 32 V

-- 120 -- Ω

A

J

Diagnostic Characteristics

Open load detection current

(on-condition)

8)

Short circuit current limit for max. duration of 400 µs, prior to shutdown (see t

9)

While demagnetizing load inductance, dissipated energy in PROFET is

V

2

E

= 1/

AS

2

10)

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current I these condition is dependent on the size of the heatsink. Reverse I external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

L

*

I

*

L

ON(CL)

* (

V

ON(CL)

of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under

GND

), see diagram page 8

-

V

bb

=-40 °C:

=25..150°C:

j

I

L (OL)

2 2

d(SC)

E

= ∫

V

AS

can be reduced by an additional

GND

ON(CL)

page 4)

*

--

i

(t) dt, approx.

L

900 750

mA

Infineon Technologies AG 4 22.03.99

PROFET® BTS 432 F2

T

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C,

V

= 12 V unless otherwise specified

bb

min typ max

Input and Status Feedback

Input turn-on threshold voltage

Input turn-off threshold voltage

11)

=-40..+150°C:

j

=-40..+150°C:

j

V

Input threshold hysteresis ∆ Off state input current (pin 2)

On state input current (pin 2)

Status invalid after positive input slope

(short circuit)

T

Status invalid after positive input slope (open load)

T

V

= 0.4 V:

IN

V

= 3.5 V:

IN

=-40 ... +150°C:

j

=-40 ... +150°C:

j

I

t

Status output (open drain) Zener limit voltage ST low voltage

T

=-40...+150°C,

j

T

=-40...+150°C,

j

I

= +1.6 mA:

ST

I

= +1.6 mA:

ST

V V

IN(T+)

IN(T-)

V

IN(T)

IN(off)

IN(on)

d(ST SC)

d(ST)

ST(high)

ST(low)

1.5 -- 2.4 V

1.0 -- -- V

-- 0.5 -- V 1--30µA

10 25 50 µA

80 200 400 µs

350 -- 1600 µs

5.4

--

6.1

--

0.4

V

11)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Infineon Technologies AG 5 22.03.99