intersil PROFETBTS432E2 DATA SHEET

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PROFET

Smart Highside Power Switch

Features

1

•

Load dump and reverse battery protection

•

Clamp of negative voltage at output

•

Short-circuit protection

•

Current limitation

•

Thermal shutdown

•

Diagnostic feedback

•

Open load detection in ON-state

•

CMOS compatible input

•

Electrostatic discharge (ESD) protection

•

Loss of ground and loss of V

•

Overvoltage protection

•

Undervoltage and overvoltage shutdown with auto-

protection2)

bb

)

restart and hysteresis

Application

•

µC compatible power switch with diagnostic feedback

for 12 V and 24 V DC grounded loads

•

All types of resistive, inductive and capacitve loads

•

Replaces electromechanical relays and discrete circuits

Product Summary

V

Load dump

Vbb-V V

bb (operation)

V

bb (reverse)

80 V

Avalanche Clamp 58 V

OUT

4.5 ... 42 V

-32 V

RON 38 I

L(SCp)

I

L(SCr)

I

L(ISO)

44 A

35 A

11 A

5

Straight leads

1

SMD

®

BTS 432 E2

mΩ

5

1

Standard

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS

Voltage

source

V

Logic

Voltage

sensor

IN

2

ESD

4

ST

Logic



chip on chip technology. Providing protective functions.

+ V

bb

PROFET

bb

OUT



Overvoltage

protection

Charge pump

Level shifter

Rectifier

GND

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Open load

detection

Short circuit

detection

R

Temperature

sensor

1

Signal GND

Load GND

3

5

Load

1)

No external components required, reverse load current limited by connected load.

2)

Additional external diode required for charged inductive loads

Semiconductor Group 1 of 14 2003-Oct-01

BTS 432 E2

Pin Symbol Function

1 GND - Logic ground 2 IN I Input, activates the power switch in case of logical high signal 3 Vbb + Positive power supply voltage,

the tab is shorted to this pin 4 ST S Diagnostic feedback, low on failure 5 OUT

O Output to the load

(Load, L)

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 3) Vbb 63 V

3

Load dump protection V

LoadDump

= UA + Vs, UA = 13.5 V

)

V

66.5 V

s

RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) IL self-limited A Operating temperature range Storage temperature range Power dissipation (DC) P

Tj T

stg

125 W

tot

-40 ...+150

-55 ...+150

°C

Inductive load switch-off energy dissipation, single pulse Tj=150 °C: EAS 1.7 J

Electrostatic discharge capability (ESD)

V

2.0 kV

ESD

(Human Body Model) Input voltage (DC) VIN -0.5 ... +6 V Current through input pin (DC) Current through status pin (DC)

see internal circuit diagrams page 6...

Thermal resistance chip - case: junction - ambient (free air):

IIN IST

R

thJC

R

thJA

±5.0

mA

±5.0

≤ 1

≤ 75

K/W

SMD version, device on pcb4): ≤ tbd

3)

VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839

4)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

connection. PCB is vertical without blown air.

2

(one layer, 70µm thick) copper area for Vbb

Semiconductor Group 2 2003-Oct-01

BTS 432 E2 Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

min typ max

On-state resistance (pin 3 to 5) IL = 2 A Tj=25 °C:

RON

--

Tj=150 °C: Nominal load current (pin 3 to 5)

I

9 11 -- A

L(ISO)

ISO Proposal: VON = 0.5 V, TC = 85 °C Output current (pin 5) while GND disconnected or

I

L(GNDhigh)

-- -- 1 mA

GND pulled up, VIN= 0, see diagram page 7,

Tj =-40...+150°C

Turn-on time to 90% V Turn-off time to 10% V R

= 12 Ω, Tj =-40...+150°C

L

Slew rate on 10 to 30% V

OUT

, R

= 12 Ω, Tj =-40...+150°C

L

Slew rate off 70 to 40% V

, RL = 12 Ω, Tj =-40...+150°C

OUT

OUT OUT

:

ton

:

t

off

dV /dton 0.4 -- 2.5 V/µs

-dV/dt

1 -- 5 V/µs

off

50 10

Operating Parameters

Operating voltage 5) Tj =-40...+150°C: V Undervoltage shutdown Tj =-40...+150°C: V Undervoltage restart Tj =-40...+150°C: V Undervoltage restart of charge pump

V

4.5 -- 42 V

bb(on) bb(under) bb(u rst) bb(ucp)

2.4 -- 4.5 V

-- -- 4.5 V

-- 6.5 7.5 V

see diagram page 12 Tj =-40...+150°C: Undervoltage hysteresis

∆V

bb(under)

= V

bb(u rst)

- V

bb(under)

Overvoltage shutdown Tj =-40...+150°C: V Overvoltage restart Tj =-40...+150°C: V Overvoltage hysteresis Tj =-40...+150°C: ∆V Overvoltage protection

6)

Tj =-40°C: Ibb=40 mA Tj =25...+150°C: Standby current (pin 3) Tj=-40...+25°C: VIN=0 T

Leakage output current (included in I

VIN=0

bb(off)

=150°C:

j

)

Operating current (Pin 1)7), VIN=5 V

∆V

bb(over) bb(o rst)

V

bb(AZ)

bb(under)

bb(over)

-- 0.2 -- V

42 -- 52 V 42 -- -- V

-- 0.2 -- V

60

63

I

--

bb(off)

--

I

-- 6 -- µA

L(off)

I

-- 1.1 -- mA

GND

30 55

160

--

67 12

18

38

mΩ

70

300

µs

80

-- V

25

µA

60

5)

At supply voltage increase up to V

6)

see also V

7)

Add I

, if IST > 0, add IIN, if VIN>5.5 V

ST

in table of protection functions and circuit diagram page 7. Meassured without load.

ON(CL)

= 6.5 V typ without charge pump, V

bb

≈Vbb - 2 V

OUT

Semiconductor Group 3 2003-Oct-01

BTS 432 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

min typ max

Protection Functions8)

Initial peak short circuit current limit (pin 3 to 5)9), ( max 400 µs if VON > V

ON(SC)

)

=-40°C:

Tj

=25°C:

Tj

=+150°C:

Tj

Repetitive short circuit current limit I

I

--

L(SCp)

--

24

L(SCr)

44

--

Tj = Tjt (see timing diagrams, page 10) 22 35 -- A

Short circuit shutdown delay after input pos. slope

> V

V

ON

min value valid only, if input "low" time exceeds 30 µs

, Tj =-40..+150°C:

ON(SC)

Output clamp (inductive load switch off) at V

= Vbb - V

OUT

ON(CL)

IL= 30 mA

,

t

V

Short circuit shutdown detection voltage (pin 3 to 5) V

d(SC)

ON(CL)

ON(SC)

80

--

-- 400 µs

58 -- V

8.3 -- V Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis Inductive load switch-off energy dissipation

T

= 150 °C, single pulse Vbb = 12 V:

j Start

10)

,

Vbb = 24 V: Reverse battery (pin 3 to 1)

11)

-Vbb -- -- 32 V

∆

Tjt -- 10 -- K

E

AS

E

Load12

E

Load24

-- -- 1.7

Integrated resistor in Vbb line Rbb -- 120 -- Ω

Diagnostic Characteristics

Open load detection current Tj=-40 °C:

(on-condition) Tj=25..150°C:

I

2

L (OL)

2

--

74

1.3

1.0

900 750

A

--

J

mA

8)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

9)

Short circuit current limit for max. duration of 400 µs, prior to shutdown (see t

10)

While demagnetizing load inductance, dissipated energy in PROFET is EAS= V

V

2

= 1/

E

AS

11)

Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

Reverse current I these condition is dependent on the size of the heatsink. Reverse I external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7).

* L * I

2

* (

L

V

ON(CL)

of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under

GND

ON(CL)

- V

), see diagram page 8

bb

page 4)

d(SC)

* iL(t) dt, approx.

ON(CL)

can be reduced by an additional

GND

Semiconductor Group 4 2003-Oct-01

BTS 432 E2

Parameter and Conditions Symbol Values Unit

at Tj = 25 °C, Vbb = 12 V unless otherwise specified

Input and Status Feedback

12)

Input turn-on threshold voltage

T

=-40..+150°C:

j

Input turn-off threshold voltage

T

=-40..+150°C:

j

V

IN(T+)

V

IN(T-)

Input threshold hysteresis ∆ V Off state input current (pin 2) VIN = 0.4 V: I

On state input current (pin 2) VIN = 3.5 V: I

Status invalid after positive input slope (short circuit) Tj=-40 ... +150°C: Status invalid after positive input slope (open load) Tj=-40 ... +150°C:

IN(off)

IN(on)

t

d(ST SC)

t

d(ST)

min typ max

1.5 -- 2.4 V

1.0 -- -- V

-- 0.5 -- V

IN(T)

1 -- 30 µA

10 25 50 µA

80 200 400 µs

350 -- 1600 µs

Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+150°C, IST = +1.6 mA:

V

ST(high)

V

ST(low)

5.4

--

6.1

--

0.4

--

V

12)

If a ground resistor R

is used, add the voltage drop across this resistor.

GND

Semiconductor Group 5 2003-Oct-01