Intersil MCTA75P60E118, MCTV75P60E1 Datasheet
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1999
2-18
Semiconductor
MCTV75P60E1,
MCTA75P60E1
75A, 600V
P-Type MOS Controlled Thyristor (MCT)
Package
JEDEC STYLE TO-247 5-LEAD
JEDEC MO-093AA (5-LEAD TO-218)
Symbol
ANODE
ANODE
CATHODE
GATE RETURN
GATE
ANODE
ANODE
CATHODE
GATE RETURN
GATE
G
A
K
Features
• 75A, -600V
•V
TM
= -1.3V(Maximum) at I = 75A and +150oC
• 2000A Surge Current Capability
• 2000A/µs di/dt Capability
• MOS Insulated Gate Control
• 120A Gate Turn-Off Capability at +150
o
C
Description
The MCT is an MOS Controlled Thyristor designed for switching
currents on and off by negative and positivepulsedcontrolofan
insulated MOS gate. It is designed for use in motor controls,
inverters, line switches and other power s witching applications .
The MCT is especially suited for resonant (zero voltage or
zero current switching) applications. The SCR like forward
drop greatly reduces conduction power loss.
MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150
o
C with active switching.
PART NUMBER INFORMATION
PART NUMBER PACKAGE BRAND
MCTV75P60E1 TO-247 MV75P60E1
MCTA75P60E1 MO-093AA MA75P60E1
NOTE: When ordering, use the entire part number.
April 1999
Absolute Maximum Ratings T
C
= +25oC, Unless Otherwise Specified
MCTV75P60E1
MCTA75P60E1 UNITS
Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DRM
-600 V
Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
+5 V
Continuous Cathode Current (See Figure 2)
TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
K25
I
K90
85
75
A
A
Non-Repetitive Peak Cathode Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
KSM
2000 A
Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
KC
120 A
Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GA
±20 V
Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GAM
±25 V
Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt See Figure11
Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt 2000 A/µs
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
208 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to +150
o
C
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(0.063" (1.6mm) from case for 10s)
T
L
260
o
C
NOTE:
1. Maximum Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC
File Number 3374.6
PART WITHDRAWN
PROCESS OBSOLETE - NO NEW DESIGNS
2-19
Specifications MCTV75P60E1, MCTA75P60E1
Electrical Specifications T
C
= +25oC Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Peak Off-State
Blocking Current
I
DRM
VKA = -600V,
VGA = +18V
TC = +150oC- - 3 mA
TC = +25oC - - 100 µA
Peak Reverse
Blocking Current
I
RRM
VKA = +5V
VGA = +18V
TC = +150oC- - 4 mA
TC = +25oC - - 100 µA
On-State Voltage V
TM
IK = I
K90
,
VGA = -10V
TC = +150oC - - 1.3 V
TC = +25oC - - 1.4 V
Gate-Anode
Leakage Current
I
GAS
VGA = ±20V - - 200 nA
Input Capacitance C
ISS
VKA = -20V, TJ = +25oC
VGA = +18V
-10-nF
Current Turn-On
Delay Time
t
D(ON)I
L = 200µH, IK = I
K90
RG = 1Ω, VGA = +18V, -7V
TJ = +125oC
VKA = -300V
- 300 - ns
Current Rise Time t
RI
- 200 - ns
Current Turn-Off
Delay Time
t
D(OFF)I
- 700 - ns
Current Fall Time t
FI
- 1.15 1.4 µs
Turn-Off Energy E
OFF
-10-mJ
Thermal Resistance R
θJC
-.5.6oC/W
Typical Performance Curves
FIGURE 1. CATHODE CURRENTvs SATURATIONVOLTAGE
(TYPICAL)
FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT
300
100
10
1
I
K
, CATHODE CURRENT (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
TM
, CATHODE VOLTAGE (V)
PULSE TEST
PULSE DURATION - 250µs
DUTY CYCLE < 2%
TJ = +150oC
TJ = +25oC
TJ = -40oC
120
110
100
90
80
70
60
50
40
30
20
10
0
25 35 45 55 65 75 85 95 105 115 125 135 145 155
T
C
, CASE TEMPERATURE (oC)
I
K
, DC CATHODE CURRENT (A)
PACKAGE LIMIT
Loading...