Intersil MCTV35P60F1D Datasheet

Semiconductor

MCTV35P60F1D

April 1999

PROCESS OBSOLETE - NO NEW DESIGNS

Features

PART WITHDRAWN

• 35A, -600V
= -1.35V (Max) at I = 35A and +150oC

•V

TM

• 800A Surge Current Capability

• 800A/µs di/dt Capability

• MOS Insulated Gate Control

• 50A Gate Turn-Off Capability at +150

o

C

• Anti-Parallel Diode

Description

The MCT is an MOS Controlled Thyristor designed for s witch­ing currents on and offby negative and positive pulsed control
of an insulated MOS gate. It is designed for use in motor con­trols, inverters, line switches and other power switching appli­cations. The MCT is especially suited for resonant (zero
voltage or zero current switching) applications. The SCR like
forward drop greatly reduces conduction pow er loss .

MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150
This device features a discrete anti-parallel diode that shunts
current around the MCT in the reverse direction without
introducing carriers into the depletion region.

PART NUMBER INFORMATION

PART NUMBER PACKAGE BRAND

MCTV35P60F1D TO-247 M35P60F1D

NOTE: When ordering, use the entire part number.

Formerly developmental type TA9789 (MCT) and TA49054
(diode).

o

C with active switching.

35A, 600V P-Type MOS Controlled

Thyristor (MCT) with Anti-Parallel Diode

Package

JEDEC STYLE TO-247

A

A

K

GR

G

Symbol

GA

K

Absolute Maximum Ratings T

Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Cathode Current (See Figure 2)

TC = +25oC (Package Limited). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = +90oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate-Anode Voltage (Continuous). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt SeeFigure 11

Rate of Change of Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .di/dt 800 A/µs

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43 W/oC

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

(0.063" (1.6mm) from case for 10s)
NOTE: 1. Maximum Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1999

= +25oC, Unless Otherwise Specified

C

2-8

MCTV35P60F1D UNITS

DRM

K25

K115
KSM

KC

GA1

GAM

T

STG

L

-600 V

60
35

800 A

50 A

±20 V
±25 V

178 W

-55 to +150
260

File Number 3694.4

A
A

o

C

o

C

Specifications MCTV35P60F1D

Electrical Specifications T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Peak Off-State
Blocking Current

On-State Voltage V

Gate-Anode
Leakage Current

Input Capacitance C

Current Turn-On
Delay Time

Current Rise Time t

Current Turn-Off Delay Time t

Current Fall Time t

Turn-Off Energy E

= +25oC, Unless Otherwise Specified

C

I

DRM

VKA = -600V TC = +150oC- - 5 mA

VGA = +18V TC = +25oC - - 200 µA

IK = I

K115

V

= -7V

GA

VGA = ±20V - - 100 nA

VKA = -20V, TJ = +25oC

I

GAS

TM

ISS

VGA = +18V

t

D(ON)I

L = 200µH, IK = I

K115

RG = 1Ω, VGA = +18V, -7V
TJ = +125oC

RI

D(OFF)I

FI

OFF

VKA = -300V

TC = +150oC - - 1.35 V

= +25oC - - 1.4 V

T

C

-5-nF

- 140 - ns

- 180 - ns

- 640 - ns

- 1.1 1.4 µs

- 5.6 - mJ

Thermal Resistance (MCT) R

Thermal Resistance (Diode) R

Diode Forward Voltage V

Diode Reverse Recovery Time t

θJC

θJC

KA

RR

IKA= 35A - - 1.4 V

IKA= 35A, di/dt = 100A/µs - - 600 ns

Typical Performance Curves

100

PULSE TEST
PULSE DURATION = 250µs

50

DUTY CYCLE < 2%

30
20

10

TJ = +150oC

5
3

, CATHODE CURRENT (A)

K

I

2

1

0 0.5 1.0 1.5 2.0

VTM, CATHODE VOLTAGE (V)

TJ = -40oC

TJ = +25oC

-.6.7oC/W

- 1.1 1.2

= +150oC

T

100

80

PACKAGE LIMIT

60

40

20

, DC CATHODE CURRENT (A)

K

I

0

20 40 60 80 100 120 140 160

TC, CASE TEMPERATURE (oC)

MCT SWITCHING LIMIT

DIODE

J

MCT

o

C/W

FIGURE 1. CATHODECURRENT vs SATURATION VOLTAGE

(TYPICAL)

FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT

2-9