Intersil MCTG35P60F1 Datasheet

Semiconductor

MCTG35P60F1

PART WITHDRAWN

April 1999

PROCESS OBSOLETE - NO NEW DESIGNS

Features

• 35A, -600V
= -1.3V(Maximum) at I = 35A and +150oC

•V

TM

• 800A Surge Current Capability

• 800A/µs di/dt Capability

• MOS Insulated Gate Control

o

• 50A Gate Turn-Off Capability at +150

C

Description

The MCT is an MOS Controlled Thyristor designed for
switching currents on and off by negative and positive pulsed
control of an insulated MOS gate. It is designed for use in
motor controls, inverters, line switches and other power
switching applications.

The MCT is especially suited for resonant (zero voltage or
zero current switching) applications. The SCR like forward
drop greatly reduces conduction power loss.

MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at
junction temperatures up to +150

PART NUMBER INFORMATION

PART NUMBER PACKAGE BRAND

MCTG35P60F1 TO-247 M35P60F1

NOTE: When ordering, use the entire part number.

o

C with active switching.

35A, 600V

P-Type MOS Controlled Thyristor (MCT)

Package

JEDEC STYLE TO-247

A

K

G

Symbol

GA

K

Absolute Maximum Ratings T

Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Continuous Cathode Current (See Figure 2)

TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +115oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Non-Repetitive Peak Cathode Current (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . dv/dt See Figure 11

Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt 800 A/µs

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

(0.063" (1.6mm) from case for 10s)
NOTE:

1. Maximum Pulse Width of 250µs (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1999

= +25oC, Unless Otherwise Specified

C

2-2

I

K25

I

K115
KSM
KC

T

DRM
RRM

GA
GAM

T

L

MCTG35P60F1 UNITS

-600 V
+5 V

60
35

800 A

50 A

±20 V
±25 V

178 W

STG

-55 to +150
260

File Number 3602.5

A
A

o

C

o

C

Specifications MCTG35P60F1

Electrical Specifications T

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Peak Off-State Blocking
Current

Peak Reverse Blocking
Current

On-State Voltage V

Gate-Anode Leakage Current I

Input Capacitance C

Current Turn-On Delay Time t

Current Rise Time t

Current Turn-Off Delay Time t

Current Fall Time t

= +25oC, Unless Otherwise Specified

C

I

DRM

VKA = -600V,
VGA = +18V

I

RRM

VKA = +5V
VGA = +18V

TM

IK = I

K115

,

VGA = -10V

GAS

ISS

VGA = ±20V - - 100 nA

VKA = -20V, TJ = +25oC
VGA = +18V

D(ON)I

L = 200µH, IK = I

K115

RG = 1Ω, VGA = +18V, -7V

RI

TJ = +125oC
VKA = -300V

D(OFF)I

FI

TC = +150oC - - 1.5 mA

TC = +25oC- - 50µA

TC = +150oC- - 2 mA

TC = +25oC- - 50µA

TC = +150oC - - 1.35 V

TC = +25oC - - 1.4 V

-5-nF

- 140 - ns

- 180 - ns

- 640 - ns

- 1.1 1.4 µs

Turn-Off Energy E

Thermal Resistance R

OFF

θJC

Typical Performance Curves

100

PULSE TEST
PULSE DURATION = 250µs

50

DUTY CYCLE < 2%

30
20

10

TJ = +150oC

5
3

, CATHODE CURRENT (A)

K

I

2

1

0 0.5 1.0 1.5 2.0

V

, CATHODE VOLTAGE (V)

TM

FIGURE 1. CATHODE CURRENT vs SATURATIONVOLTAGE

(TYPICAL)

TJ = -40oC

TJ = +25oC

- 5.6 - mJ

o

C/W

100

90
80
70
60
50
40
30
20

, DC CATHODE CURRENT (A)

K

I

10

0

20

PACKAGE LIMIT

40

30

50 60

- 0.6 0.7

70 80 90

TC, CASE TEMPERATURE (oC)

100

110 120 130 140 150

FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT

2-3