Intersil MCT3A65P100F2, MCT3D65P100F2 Datasheet

April 1999

Semiconductor

PROCESS OBSOLETE - NO NEW DESIGNS

PART WITHDRAWN

MCT3A65P100F2,

MCT3D65P100F2

65A, 1000V, P-Type

MOS-Controlled Thyristor (MCT)

[ /Title
(MCT3
A65P1
00F2,
MCT3
D65P1
00F2)
/Sub­ject
(65A,
1000V,
P­Type
MOS­Con­trolled
Thyris­tor
(MCT)
)
/Autho
r ()
/Key­words
()
/Cre­ator ()
/DOCI
NFO
pdf­mark

Features

• 65A, -1000V
= -1.4V (Max) at I = 65A and 150oC

•V

TM

• 2000A Surge Current Capability

• 2000A/µs di/dt Capability

• MOS Insulated Gate Control

o

• 100A Gate Turn-Off Capability at 150

C

Part Number Information

PART NUMBER PACKAGE BRAND

MCT3A65P100F2 TO-247 M65P100F2
MCT3D65P100F2 MO-093AA M65P100F2

NOTE: When ordering, use the entire part number.

Packaging

JEDEC MO-093AA JEDEC STYLE TO-247

ANODE

ANODE

CATHODE

CATHODE
(FLANGE)

GATE RETURN

GATE

Description

The MCT is an MOS Controlled Thyristor designed for switching
currents on and off by negative and positive pulsed control of an
insulated MOS gate. It is designed for use in motor controls,
inverters, line switches, and other po wer s witching applications.

The MCT is especially suited for resonant (zero voltage or zero
current switching) applications. The SCR like forward drop
greatly reduces conduction power loss.

MCTs allow the control of high power circuits with very small
amounts of input energy. They feature the high peak current
capability common to SCR type thyristors, and operate at junc­tion temperatures up to 150

Formerly developmental type TA49226.

o

C with active switching.

Symbols

(ANODE KELVIN)

GATE RETURN

GATE

CATHODE

CATHODE

(BOTTOM SIDE

METAL)

ANODE

CATHODE (TAB)

ANODE

GATE

ANODE

CATHODE

ANODE

CATHODE

GATE RETURN

GATE

[
/Page­Mode
/Use­Out­lines
/DOC­VIEW

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright

© Harris Corporation 1999

1

File Number 4454.2

MCT3A65P100F2, MCT3D65P100F2

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

MCT3A65P100F2
MCT3D65P100F2 UNITS

Peak Off-State Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DRM
RRM

-1000 V
5V

Continuous Cathode Current

At TC = 25oC (Package Limited). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

= 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

At T

C

Non-repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Peak Controllable Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

K25

K110

KSM

KC
GA
GA

85 A
65 A

2000 A

100 A

±15 V
±20 V

Rate of Change of Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .dv/dt Figure 11

Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . di/dt 2000 A/µs

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Power Dissipation Derating T

> 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.32 W/oC

C

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . T

T

, T

J

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maxim um Ratings” ma y cause permanent damage to the device . This is a stress only rating and oper ation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

290 W

-55 to 150

300

o

C

o

C

NOTES:

1. Maximum Pulse Width of 200µs (Half Sine). Assume TJ(Initial) = 90oC and TJ(Final) = TJ(Max) = 150oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Peak Off-State Blocking Current I

Peak Reverse Blocking Current I

On-State Voltage V

Gate to Anode Leakage Current I
Input Capacitance C
Current Turn-On Delay Time t

d(ON)I

Current Rise Time t
Current Turn-Off Delay Time t

d(OFF)I

Current Fall Time t
Turn-On Energy E
Turn-Off Energy (Note 2) E
Thermal Resistance Junction To Case R

DRM

RRM

TM

GAS

ISS

rI

fI

ON

OFF

θJC

VKA= -1000V
VGA= 15V

VK= 5V
VGA= 15V

IK = I

K110

VGA = -10V

TC = 150oC--3mA
TC = 25oC - - 100 µA
TC = 150oC--4mA
TC = 25oC - - 100 µA
TC = 150oC - 1.25 1.4 V

TC = 25oC - 1.35 1.5 V
VGA = ±20V - - 200 nA
VGA = 15V, VKA = -20V, f = 1MHz - 12 - nF
TC = 150oC

L = 200µH
IK = I

K110

= 65A

VKA = -400V

- 125 - ns

-70- ns

- 770 - ns

VGA = 15V/-10V
RG = 2.2Ω
Test Circuit (Figure 13)

- 1000 1400 ns

- 2.8 - mJ

-15- mJ

- - 0.43

NOTE:

2. Turn-Off Energy Loss (E

) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and

OFF

ending at the point where the cathode current equals zero (IK = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses
include losses due to diode recovery.

o

C/W

2

MCT3A65P100F2, MCT3D65P100F2

Typical Performance Curves

300

PULSE TEST
PULSE DURATION - 250µs

100

DUTY CYCLE < 2%

10

, CATHODE CURRENT (A)

K

I

1

TJ = 150oC

TJ = 25oC

TJ = -40oC

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

V

, CATHODE VOLTAGE (V)

TM

(Unless Otherwise Specified)

, DC CATHODE CURRENT (A)

K

I

100

80

60

40

20

0

20 60 80 100 120 140 160

PACKAGE LIMIT

40

T

, CASE TEMPERATURE (oC)

C

FIGURE 1. CATHODE CURRENT vs SATURATION VOLTA GE FIGURE 2. DC CATHODE CURRENT vs CASE TEMPERA TURE

180

160

140

120

100

, TURN-ON DELAY TIME (ns)

80

d(ON)I

t

60

TJ = 150oC, RG = 2.2Ω, L = 200µH

VKA = -400V

VKA = -500V

100 20304050607080 100

I

, CATHODE CURRENT (A)

K

90

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

, TURN-OFF DELAY TIME (µs)

0.4

0.2

d(OFF)i

t

TJ = 150oC, RG = 2.2Ω, L = 200µH

VKA = -500V

VKA = -400V

0

0

10 20 30 40 50 60 70 80 90 100

, CATHODE CURRENT (A)

I

K

FIGURE 3. TURN-ON DELAY TIME vs CATHODE CURRENT FIGURE 4. TURN-OFF DELAY TIME vs CATHODE CURRENT

80

TJ = 150oC, RG = 2.2Ω, L = 200µH

70

60

50

40

30

, RISE TIME (ns)

rI

t

20

10

0

0

VKA = -400V

10 20 30 40 50 60 70 80 90

I

, CATHODE CURRENT (A)

K

VKA = -500V

100

1.2
TJ = 150oC, RG = 2.2Ω, L = 200µH

1.0

0.8

0.6

, FALL TIME (µs)

0.4

fI

t

0.2

0

0

10 20 30 40 50 60 70 80 90 100

VKA = -400V

I

K

VKA = -500V

, CATHODE CURRENT (A)

FIGURE 5. TURN-ON RISE TIME vs CATHODE CURRENT FIGURE 6. TURN-OFF FALL TIME vs CATHODE CURRENT

3