Datasheet JANSR2N7407 Datasheet (Intersil)

JANSR2N7407

Data Sheet December 1998 File Number

Formerly Available As FSF254R4,
Radiation Hardened, SEGR Resistant,
N-Channel Power MOSFETs

The Discrete Products Operation of Intersil has developeda
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity toSingleEvent Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space
environments. The dose rate and neutron tolerance
necessary for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, motor drives,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate drive power.
This type can be operated directly from integrated circuits.

Features

• 18A, 250V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
to 80% of Rated Breakdown and V

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 15nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm

• Usable to 1E14 Neutrons/cm

DS(ON)

= 0.170Ω

2

2

with VDS up

of 10V Off-Bias

GS

2

Symbol

4636

DSS

DM

Also availableat other radiation and screening levels.See us
on the web, Intersil’ home page:www.semi.intersil.com.
Contact your local Intersil Sales Office for additional
information.

Ordering Information

PART NUMBER PACKAGE BRAND

JANSR2N7407 TO-254AA JANSR2N7407

Die Family TA17658.
MIL-PRF-19500/634.

Packaging

CAUTION: Beryllia Warning per MIL-S-19500

TO-254AA

G

S

D

refer to package specifications.

4-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

JANSR2N7407

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

JANSR2N7407 UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

DGR

250 V
250 V

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

18 A
12 A
54 A

±20 V

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T
T

125 W

50 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.00 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

Lead Temperature (During Soldering). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

54 A
18 A
54 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

Weight (Typical). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

9.3

g

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 250 - - V

= VDS,

ID = 1mA

TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = 200V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge (Not on slash sheet) Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge (Not on slash sheet) Q
Gate Charge Source Q
Gate Charge Drain Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

r

f

g(12)

g(TH)

gs

gd

JC

θ

JA

θ

= 12V, ID = 18A - - 3.21 V

= 12A,

VGS = 12V

VDD = 125V, ID = 18A,
RL = 6.94Ω, VGS = 12V,
RGS = 2.35Ω

TC = 25oC - 0.120 0.170 Ω

TC = 125oC - - 0.306 Ω

- - 130 ns

- - 160 ns

- - 160 ns

- - 65 ns

= 0V to 20V VDD = 125V,

VGS = 0V to 12V - 120 150 nC

ID = 18A

- - 230 nC

VGS = 0V to 2V - - 7.6 nC

-2228nC

-5671nC

- - 1.00

o

C/W

--48oC/W

4-2

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

JANSR2N7407

ISD = 18A 0.6 - 1.8 V
ISD = 18A, dISD/dt = 100A/µs - - 690 ns

Electrical Specifications up to 100K RAD T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

DS(ON)12VGS

DSS

GS(TH)VGS

GSS
DSS

DS(ON)VGS

VGS = 0, ID = 1mA 250 - V

= VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 200V - 25 µA

= 12V, ID = 18A - 3.21 V

= 12V, ID = 12A - 0.170 Ω

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

DSS

.

Single Event Effects (SEB, SEGR) Note 4

ENVIRONMENT (NOTE 5)

TEST SYMBOL

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

Single Event Effects Safe Operating Area SEESOA Ni 26 43 -20 250

Br 37 36 -5 250
Br 37 36 -10 200
Br 37 36 -15 125
Br 37 36 -20 50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

APPLIED

V

BIAS

GS

(V)

(NOTE 6)

MAXIMUM

VDSBIAS (V)

Typical Performance Curves

LET = 26MeV/mg/cm

300

200

(V)

DS

V

100

0

0 -10 -15 -20 -25

LET = 37MeV/mg/cm2, RANGE = 36µ

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

-5
(V)

V

GS

Unless Otherwise Specified

2

, RANGE = 43µ

LIMITING INDUCTANCE (HENRY)

1E-3

1E-4

1E-5

1E-6

1E-7

30

DRAIN SUPPLY (V)

ILM = 10A

30A

100A

300A

30010010

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO I

AS

4-3

1000

JANSR2N7407

Typical Performance Curves

24

20

16

12

, DRAIN (A)

D

I

8

4

0

-50
TC, CASE TEMPERATURE (oC)

500

Unless Otherwise Specified (Continued)

100

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

150

100

TC = 25oC

10

1

, DRAIN CURRENT (A)
I

OPERATION IN THIS

D

AREA MAY BE
LIMITED BY r

0.1
1 10 100

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

2.5

PULSE DURATION = 250µs, VGS = 12V, ID = 12A

2.0

100µs

1ms

10ms

100ms

700

12V

V

Q

GS

G

Q

G

Q

GD

CHARGE

DS(ON)

1.5

1.0

NORMALIZED r

0.5

0.0

-80 -40 0 40 80 120 160

FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED r

10

)

1

θJC

NORMALIZED

THERMAL RESPONSE (Z

0.001

0.1

0.01

0.5

0.2

0.1

0.05

0.02

0.01
SINGLE PULSE

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

-2

10

T

, JUNCTION TEMPERATURE (oC)

J

vs JUNCTION TEMPERA TURE

DS(ON)

P

DM

2

+ T

θJC

C

-1

10

t
t

0

10

1
2

1

10

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

4-4

JANSR2N7407

Typical Performance Curves

100

10

, AVALANCHE CURRENT (A)

AS

I

Test Circuits and Waveforms

ELECTRONIC SWITCH OPENS

WHEN I

V

DS

Unless Otherwise Specified (Continued)

STARTING TJ = +25oC

STARTING TJ = +150oC

IF R = 0

tAV = (L) (IAS) / (1.3 RATED BV

IF R ≠ 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BV

1

0.01

0.1 1 10

, TIME IN AVALANCHE (ms)

t

AV

DSS

- VDD)

DSS

- VDD) + 1]

FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING

IS REACHED

AS

L

BV

DSS

P

t

AV

VARY t

TO OBTAIN

P

REQUIRED PEAK I

VGS≤ 20V

t

0V

P

CURRENT

TRANSFORMER

50Ω

AS

+

I

AS

-

+

V

DD

-

DUT

50Ω

50V-150V

t

I

AS

FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS

t

t

d(ON)

90%

ON

10%

t

r

PULSE WIDTH

0V

VGS = 12V

V

DD

R

L

V

DS

DUT

R

GS

V

DS

V

GS

10%

V

DS

t

d(OFF)

90%

t

OFF

50%50%

V

t

f

10%

DD

90%

FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

4-5

JANSR2N7407

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).

Delta Tests and Limits (JANS) T

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

= 25oC, Unless Otherwise Specified

C

Gate to Source Leakage Current I
Zero Gate Voltage Drain Current I
Drain to Source On Resistance r
Gate Threshold Voltage V

NOTES:

7. Or 100% of Initial Reading (whichever is greater).

8. Of Initial Reading.

DS(ON)

GS(TH)

GSS

DSS

VGS = ±20V ±20 (Note 7) nA
VDS = 80% Rated Value ±25 (Note 7) µA
TC = 125oC at Rated I
ID = 1.0mA ±20% (Note 8) V

D

±20% (Note 8) Ω

Screening Information

TEST JANS

Gate Stress VGS = 30V, t = 250µs
Pind Required
Pre Burn-In Tests (Note 9) MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC)

Steady State Gate
Bias (Gate Stress)

Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table
Steady State Reverse

Bias (Drain Stress)

MIL-STD-750, Method 1042, Condition B
VGS = 80% of Rated Value,
TA = 150oC, Time = 48 hours

MIL-STD-750, Method 1042, Condition A
VDS = 80% of Rated Value,

TA = 150oC, Time = 240 hours
PDA 5%
Final Electrical Tests (Note 9) MIL-S-19500, Group A,

Subgroups 2 and 3

NOTE:

9. Test limits are identical pre and post burn-in.

Additional Screening Tests

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Safe Operating Area SOA VDS = 200V, t = 10ms 1.35 A
Unclamped Inductive Switching I
Thermal Response ∆V
Thermal Impedance ∆V

AS

SD

SD

V

GS(PEAK)

tH = 100ms; VH = 25V; IH = 4A 136 mV
tH = 500ms; VH = 25V; IH = 4A 187 mV

= 15V, L = 0.1mH 54 A

4-6

JANSR2N7407

Rad Hard Data Packages - Intersil Power Transistors

1. JANS Rad Hard - Standard Data Package

A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet

- Hi-Rel Lot Traveler

- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data

F. Group A - Attributes Data Sheet
G. Group B - Attributes Data Sheet
H. Group C - Attributes Data Sheet

I. Group D - Attributes Data Sheet

2. JANS Rad Hard - Optional Data Package

A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet

- Hi-Rel Lot Traveler

- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data

- X-Ray and X-Ray Report

F. Group A - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups A2, A3, A4, A5 and A7 Data

G. Group B - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups B1, B3, B4, B5 and B6 Data

H. Group C - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups C1, C2, C3 and C6 Data

I. Group D - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Pre and Post Radiation Data

4-7

TO-254AA

3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE

JANSR2N7407

A

A

1

J

1

SYMBOL

A 0.249 0.260 6.33 6.60 -

A

1

Øb 0.035 0.045 0.89 1.14 2, 3

D 0.790 0.800 20.07 20.32 ­E 0.535 0.545 13.59 13.84 -

e 0.150 TYP 3.81 TYP 4

e

1

H

1

J

1

L 0.520 0.560 13.21 14.22 -

ØP 0.139 0.149 3.54 3.78 -

Q 0.110 0.130 2.80 3.30 -

NOTES:

1. These dimensions are within allowabledimensions of Rev.A of
JEDEC outline TO-254AA dated 11-86.

2. Add typically 0.002 inches (0.05mm) for solder coating.

3. Lead dimension (without solder).

4. Positionof leadtobe measured 0.250inches(6.35mm) frombottom
of dimension D.

5. Die to base BeO isolated, terminals to case ceramic isolated.

6. Controlling dimension: Inch.

7. Revision 1 dated 1-93.

TYP.

b

Ø

ØP

H

1

E

Q

D

0.065 R MAX.

L

12 3

e

e

1

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

0.040 0.050 1.02 1.27 -

0.300 BSC 7.62 BSC 4

0.245 0.265 6.23 6.73 -

0.140 0.160 3.56 4.06 4

WARNING!

BERYLLIA WARNING PER MIL-S-19500

Packagescontaining beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation
which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be
subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds.

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly , the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

Sales Office Headquarters

NORTH AMERICA

Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: [phone]
FAX: [phone]

EUROPE

Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: [phone]
FAX: [phone]

ASIA

Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: [phone]
FAX: [phone]

4-8