Intersil JANSR2N7401 Datasheet
JANSR2N7401
Formerly FSS234R4
6A, 250V, 0.600 Ohm, Rad Hard,
N-Channel Power MOSFET
The Discrete Products Operation of Intersil has developed a
series of Radiation Hardened MOSFETs specifically
designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects
(SEE), Single Event Gate Rupture (SEGR) in particular, is
combined with 100K RADS of total dose hardness to provide
devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for
military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be operated directly from integrated circuits.
August 1998 File Number 4571
Features
• 6A, 250V, r
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
to 80% of Rated Breakdown and V
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 4.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
DS(ON)
= 0.600Ω
2
with VDS up
of 10V Off-Bias
GS
DSS
DM
2
Symbol
2
Also available at other radiation and screening levels. See us
on the web, Intersil’ home page: http://www.semi.intersil.com. Contact your local Intersil Sales Office for additional
information.
Ordering Information
PART NUMBER PACKAGE BRAND
JANSR2N7401 TO-257AA JANSR2N7401
Die Family TA17638.
MIL-PRF-19500/632.
Package
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
TO-257AA
S
D
G
4-1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
JANSR2N7401
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
JANSR2N7401 UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
250 V
250 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
D
D
DM
GS
6A
4A
18 A
±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
50 W
20 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.40 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . . . . . . . I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
SM
STG
Lead Temperature (During Soldering). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
S
L
18 A
6A
18 A
-55 to 150
300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
__
g
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On-State Voltage V
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge (Not on slash sheet) Q
g(TOT)VGS
Gate Charge at 12V Q
Threshold Gate Charge (Not on slash sheet) Q
Gate Charge Source Q
Gate Charge Drain Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
DSSID
DSS
GSS
r
f
g(12)
g(TH)
gs
gd
JC
θ
JA
θ
= 1mA, VGS = 0V 250 - - V
= VDS,
ID = 1mA
TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V
VDS = 200V,
VGS = 0V
TC = 25oC--25µA
TC = 125oC - - 250 µA
VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
= 12V, ID = 6A - - 3.78 V
= 4A,
VGS = 12V
VDD = 125V, ID = 6A,
RL = 20.8Ω, VGS = 12V,
RGS = 7.5Ω
TC = 25oC - 0.450 0.600 Ω
TC = 125oC - - 1.08 Ω
- - 70 ns
- - 140 ns
- - 120 ns
- - 95 ns
= 0V to 20V VDD = 125V,
VGS = 0V to 12V - 32 41 nC
ID = 6A
- - 62 nC
VGS = 0V to 2V - - 3.0 nC
- 7.3 11 nC
-1621nC
- - 2.5
o
C/W
--60oC/W
4-2
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
SD
rr
JANSR2N7401
ISD = 6A 0.6 - 1.8 V
ISD = 6A,dISD/dt = 100A/µs - - 420 ns
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r
DS(ON)12VGS
DSSVGS
GS(TH)VGS
GSS
DSS
DS(ON)VGS
= 0, ID = 1mA 250 - V
= VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 200V - 25 µA
= 12V, ID = 6A - 3.78 V
= 12V, ID = 4A - 0.600 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) Note 4
ENVIRONMENT (NOTE 5)
TEST SYMBOL
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Single Event Effects Safe Operating Area SEESOA Ni 26 43 -20 250
Br 37 36 -5 250
Br 37 36 -10 200
Br 37 36 -15 125
Br 37 36 -20 50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), TC = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
APPLIED
VGS BIAS
(V)
(NOTE 6)
MAXIMUM
VDSBIAS (V)
Typical Performance Curves
LET = 26MeV/mg/cm
300
200
(V)
DS
V
100
0
0 -10 -15 -20 -25
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
TEMP = 25oC
-5
(V)
V
GS
Unless Otherwise Specified
2
, RANGE = 43µ
LIMITING INDUCTANCE (HENRY)
1E-3
1E-4
1E-5
1E-6
1E-7
30
DRAIN SUPPLY (V)
ILM = 10A
30A
100A
300A
30010010
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
4-3
1000
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