Intersil JANSR2N7399 Datasheet

JANSR2N7399

Formerly FSS130R4

June 1998

Features

• 11A, 100V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm
V

up to 80% of Rated Breakdown and

DS

V

of 10V Off-Bias

GS

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 1.5nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Ordering Information

PART NUMBER PACKAGE BRAND

JANSR2N7399 T0-257AA JANSR2N7399

Die Family TA17636.

DS(ON)

= 0.210Ω

2

2

2

with

DSS

DM

11A, 100V, 0.210 Ohm, Rad Hard,

N-Channel Power MOSFET

Description

The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif­ically designed for commercial and military space applica­tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu­lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi­ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.

The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings. Numer­ous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc­ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula­tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.

Also available at other r adiation and screening le v els . See us
on the web, Intersil’s home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional
information.

MIL-PRF-19500/632.

Symbol

Package

TO-257AA

S

D

G

CAUTION: Beryllia Warning per MIL-S-19500

refer to package specifications.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

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File Number 4481

JANSR2N7399

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

JANSR2N7399 UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

100 V
100 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

D
D

DM

GS

11 A

7A

33 A

±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T
T

50 W
20 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.40 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

33 A
11 A
33 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

4.4

g

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

DSSID

GS(TH)VGS

= 1mA, VGS = 0V 100 - - V

= VDS,

ID = 1mA

TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

DSS

GSS

VDS = 80V,
VGS = 0V

TC = 25oC--25µA
TC = 125oC - - 250 µA

VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)12ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge (Not on slash sheet) Q

g(TOT)VGS

Gate Charge at 12V Q
Threshold Gate Charge (Not on slash sheet) Q
Gate Charge Source Q
Gate Charge Drain Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

r

f

g(12)

g(TH)

gs

gd

JC

θ

JA

θ

= 12V, ID = 11A - - 2.43 V

= 7A,

VGS = 12V

VDD = 50V, ID = 11A,
RL = 4.55Ω, VGS = 12V,
RGS = 7.5Ω

TC = 25oC - 0.140 0.210 Ω

TC = 125oC - - 0.351 Ω

- - 65 ns

- - 200 ns

- - 130 ns

- - 90 ns

= 0V to 20V VDD = 50V,

VGS = 0V to 12V - 32 42 nC

ID = 11A

- - 63 nC

VGS = 0V to 2V - - 2.4 nC

- 8.0 11 nC

-1723nC

- - 2.5

o

C/W

--60oC/W

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JANSR2N7399

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD
rr

Electrical Specifications up to 100K RAD T

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV

Single Event Effects (SEB, SEGR) (Note 4)

ISD = 11A 0.6 - 1.8 V
ISD = 11A, dISD/dt = 100A/µs - - 280 ns

= 25oC, Unless Otherwise Specified

C

DSS

GS(TH)

GSS
DSS

DS(ON)

DS(ON)12VGS

VGS = 0, ID = 1mA 100 - V
VGS = VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 80V - 25 µA
VGS = 12V, ID = 11A - 2.43 V

= 12V, ID = 7A - 0.210 Ω

DSS

.

ENVIRONMENT (NOTE 5)

APPLIED

VGS BIAS

TEST SYMBOL

Single Event Effects Safe Operating
Area

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

SEESOA Ni 26 43 -20 100

Br 37 36 -10 100
Br 37 36 -15 80
Br 37 36 -20 50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Typical Performance Curves

LET = 26MeV/mg/cm2, RANGE = 43µ

120

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

100

80

(V)

60

DS

V

40

20

TEMP = 25oC

0

0 -10

LET = 37MeV/mg/cm2, RANGE = 36µ

-5
(V)

V

GS

Unless Otherwise Specified

-15

-20 -25

1E-3

1E-4

1E-5

1E-6

LIMITING INDUCTANCE (HENRY)

1E-7

30

DRAIN SUPPLY (V)

(V)

30010010

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

ILM = 10A

30A

100A

300A

1000

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO I

AS

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