Intersil JANSR2N7396 Datasheet
JANSR2N7396
Formerly FSL230R4
June 1998
Features
• 5A, 200V, r
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
V
up to 80% of Rated Breakdown and
DS
V
of 10V Off-Bias
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
- Usable to 1E14 Neutrons/cm
Ordering Information
DS(ON)
= 0.460Ω
2
2
2
with
DSS
DM
5A, 200V, 0.460 Ohm, Rad Hard,
N-Channel Power MOSFET
Description
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
PART NUMBER PACKAGE BRAND
JANSR2N7396 TO-205AF JANSR2N7396
Die Family TA17637.
MIL-PRF-19500/631.
Package
Also available at other r adiation and screening le v els . See us
on the web, Intersil’ home page:http://www.intersil.com.
Contact your local Intersil Sales Office for additional
information.
Symbol
TO-205AF
G
S
D
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
2-34
File Number 4452.1
JANSR2N7396
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
JANSR2N7396 UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
DGR
200 V
200 V
Continuous Drain Current
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
D
D
DM
GS
5A
3A
15 A
±20 V
Maximum Power Dissipation
TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
T
T
25 W
10 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . I
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
AS
S
SM
L
15 A
5A
15 A
-55 to 150
300
o
C
o
C
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
1.0
g
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
DSSID
GS(TH)VGS
= 1mA, VGS = 0V 200 - - V
= VDS,
ID = 1mA
TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
DSS
GSS
VDS = 160V,
VGS = 0V
TC = 25oC--25µA
TC = 125oC - - 250 µA
VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - - 200 nA
Drain to Source On-State Voltage V
Drain to Source On Resistance r
Turn-On Delay Time t
DS(ON)VGS
DS(ON)12ID
d(ON)
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Total Gate Charge (Not on slash sheet) Q
g(TOT)VGS
Gate Charge at 12V Q
Threshold Gate Charge (Not on slash sheet) Q
Gate Charge Source Q
Gate Charge Drain Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R
r
f
g(12)
g(TH)
gs
gd
JC
θ
JA
θ
= 12V, ID = 5A - - 2.42 V
= 3A,
VGS = 12V
VDD = 100V, ID = 5A,
RL = 20Ω, VGS = 12V,
RGS = 7.5Ω
TC = 25oC - 0.340 0.460 Ω
TC = 125oC - - 0.805 Ω
- - 65 ns
- - 150 ns
- - 120 ns
- - 85 ns
= 0V to 20V VDD = 100V,
VGS = 0V to 12V - 31 38 nC
ID = 5A
- - 58 nC
VGS = 0V to 2V - - 2.6 nC
- 6.1 8.4 nC
-1520nC
- - 5.0
o
C/W
- - 175oC/W
2-35
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Forward Voltage V
Reverse Recovery Time t
SD
rr
JANSR2N7396
ISD = 5A 0.6 - 1.8 V
ISD = 5A, dISD/dt = 100A/µs - - 360 ns
Electrical Specifications up to 100K RAD T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS
Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r
DS(ON)12
DSS
GS(TH)
GSS
DSS
DS(ON)
VGS = 0, ID = 1mA 200 - V
VGS = VDS, ID = 1mA 1.5 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 160V - 25 µA
VGS = 12V, ID = 5A - 2.42 V
VGS = 12V, ID = 3A - 0.460 Ω
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BV
DSS
.
Single Event Effects (SEB, SEGR) (Note 4)
ENVIRONMENT (NOTE 5)
APPLIED
VGS BIAS
TEST SYMBOL
Single Event Effects Safe Operating
Area
ION
SPECIES
SEESOA Ni 26 43 -20 200
Br 37 36 -5 200
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Br 37 36 -10 160
Br 37 36 -15 100
Br 37 36 -20 40
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
(V)
(NOTE 6)
MAXIMUM
VDS BIAS
(V)
Typical Performance Curves
LET = 26MeV/mg/cm2, RANGE = 43µ
240
200
160
(V)
120
DS
V
80
40
0
0 -10
LET = 37MeV/mg/cm2, RANGE = 36µ
FLUENCE = 1E5 IONS/cm2 (TYPICAL)
TEMP = 25oC
-5
(V)
V
GS
Unless Otherwise Specified
-15
-20 -25
1E-3
1E-4
1E-5
1E-6
LIMITING INDUCTANCE (HENRY)
1E-7
30
DRAIN SUPPLY (V)
ILM = 10A
30A
100A
300A
30010010
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
2-36
1000
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