Intersil JANSR2N7294 Datasheet

JANSR2N7294

Formerly FRF250R4

June 1998

Features

• 23A, 200V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 12nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Ordering Information

PART NUMBER PACKAGE BRAND

DS(ON)

= 0.115Ω

2

2

DSS

DM

23A, 200V, 0.115 Ohm, Rad Hard,

N-Channel Power MOSFET

Description

The Intersil Corporation has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-Chan­nel and P-Channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as
25mΩ. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate hard­ness (GAMMA DOT) exists for rates to 1E9 without current
limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc­ture. It is specially designed and processed to exhibit mini­mal characteristic changes to total dose (GAMMA) and
neutron (n
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.

Also availableat other radiation and screening levels. See us
on the web, Intersil’ home page: http://www.intersil.com.
Contact your local Intersil Sales Office for additional informa­tion.

o

) exposures. Design and processing efforts are

JANSR2N7294 TO-254AA JANSR2N7294

Die family TA17652.
MIL-PRF-19500/605.

Package

CAUTION: Beryllia Warning per MIL-S-19500

Symbol

TO-254AA

G

S

D

refer to package specifications.

D

G

S

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000.

2-23

File Number 4292.1

JANSR2N7294

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

JANSR2N7294 UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

200 V
200 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

23 A
15 A
69 A

±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T
T

125 W

50 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.00 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

69 A
23 A
69 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.3 g

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge (Not on slash sheet) Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge (Not on slash sheet) Q
Gate Charge Source Q
Gate Charge Drain Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

r

f

g(10)

g(TH)

gs

gd

JC

θ

JA

θ

= 1mA, VGS = 0V 200 - - V

= VDS,

ID = 1mA

VDS = 160V,
VGS = 0V

TC = -55oC - - 5.0 V

= 25oC 2.0 - 4.0 V

T

C

= 125oC 1.0 - - V

T

C

TC = 25oC--25µA

= 125oC - - 250 µA

T

C

VGS = ±20V TC = 25oC - - 100 nA

= 125oC - - 200 nA

T

C

= 10V, ID = 23A - - 2.78 V

= 15A,

VGS = 10V
VDD = 100V, ID = 23A,

RL = 4.35Ω, VGS = 10V,
RGS = 25Ω

TC = 25oC - - 0.115 Ω

= 125oC - - 0.253 Ω

T

C

- - 156 ns

- - 510 ns

- - 574 ns

- - 280 ns

= 0V to 20V VDD = 100V,

VGS = 0V to 10V - - 298 nC

ID = 23A

- - 558 nC

VGS = 0V to 2V - - 20 nC

- - 66 nC

- - 144 nC

- - 1.0

o

C/W

--48oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

ISD = 25A 0.6 - 1.8 V
ISD = 25A, dISD/dt = 100A/µs - - 1700 ns

2-24

JANSR2N7294

Electrical Specifications up to 100K RAD T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drainto Source BreakdownVolts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

DS(ON)

DSS

GS(TH)

GSS

DSS

DS(ON)

VGS = 0, ID = 1mA 200 - V
VGS = VDS, ID = 1mA 2.0 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 160V - 25 µA
VGS = 10V, ID = 23A - 2.78 V
VGS = 10V, ID = 15A - 0.115 Ω

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 10V, VDS = 0V and VGS = 0V, VDS = 80% BV

Typical Performance Curves Unless Otherwise Specified

28

24

100

DSS

.

TC = 25oC

20

16

12

, DRAIN (A)

D

I

8

4

0

TC, CASE TEMPERATURE (oC)

FIGURE 1. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

10

1

, DRAIN CURRENT (A)

D

I

150100500-50

0.1

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

DS(ON)

10

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

100

100µs

1ms

10ms
100ms

FIGURE 2. FORWARD BIAS SAFE OPERATING AREA

2-25