Intersil JANSR2N7281 Datasheet

JANSR2N7281

Formerly FRL430R4

Data Sheet November 1998 File Number

Radiation Hardened, N-Channel
Power MOSFET

The Intersil has designed a series of SECOND
GENERATION hardened power MOSFETs of both N­Channel and P-Channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as
25mΩ. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate
hardness (GAMMA DOT) exists for rates to 1E9 without
current limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specially designed and processed to exhibit
minimal characteristic changes to total dose (GAMMA) and
neutron (n
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.

Also availableatotherradiation and screening levels.Seeus
on the web, Intersil’ home page: www.semi.intersil.com.
Contact your local Intersil Sales Office for additional
information.

o

) exposures. Design and processing efforts are

Ordering Information

Features

• 2A, 500V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 8nA Per-RAD (Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications for 3E12
Neutrons/cm

- Usable to 3E13 Neutrons/cm

DS(ON)

2

= 2.50Ω

2

Symbol

D

G

S

4294

DSS

DM

PART NUMBER PACKAGE BRAND

JANSR2N7281 TO-205AF JANSR2N7281

Die family TA17635.
MIL-PRF-19500/604.

Package

TO-205AF

G

S

D

4-1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

JANSR2N7281

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

JANSR2N7281 UNITS

Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

DS

DGR

500 V
500 V

Continuous Drain Current

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

2A
1A
6A

±20 V

Maximum Power Dissipation

TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

T
T

25 W
10 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJC, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

6A
2A
6A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 g

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On-State Voltage V
On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge Q

g(TOT)VGS

Gate Charge at 10V Q
Threshold Gate Charge Q
Gate Charge Source Q
Gate Charge Drain Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

r

f

g(10)

g(TH)

gs

gd

JC

θ

JA

θ

= 1mA, VGS = 0V 500 - - V

= VDS,

ID = 1mA

VDS = 400V,
VGS = 0V

TC = -55oC - - 5.0 V

= 25oC 2.0 - 4.0 V

T

C

= 125oC 1.0 - - V

T

C

TC = 25oC--25µA

= 125oC - - 250 µA

T

C

VGS = ±20V TC = 25oC - - 100 nA

= 125oC 200 nA

T

C

= 10V, ID = 2A 5.25 V

= 1A,

VGS = 10V
VDD = 250V, ID = 2A,

RL = 125Ω, VGS = 10V,
RGS =25Ω

TC = 25oC - - 2.50 Ω

= 125oC - - 6.50 Ω

T

C

- - 46 ns

- - 58 ns

- - 208 ns

- - 54 ns

= 0V to 20V VDD = 250V,

VGS = 0V to 10V - - 64 nC

ID = 2A,
RL = 125Ω

- - 130 nC

VGS = 0V to 2V - - 4 nC

- - 12 nC

- - 32 nC

- - 5.0

- - 175

o
o

C/W
C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

4-2

SD

rr

ISD = 2A 0.6 - 1.8 V
ISD = 2A, dISD/dt = 100A/µs - - 900 ns

JANSR2N7281

Electrical Specifications up to 100K RAD T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero-Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

DS(ON)VGS

DS(ON)VGS

DSS

GS(TH)VGS

GSS
DSS

VGS = 0, ID = 1mA 500 - V

= VDS, ID = 1mA 2.0 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 400V - 25 µA

= 10V, ID = 2A - 5.25 V

= 10V, ID = 1A - 2.5 Ω

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 10V, VDS = 0V and VGS = 0V, VDS = 80% BV

Typical Performance Curves

2

, DRAIN (A)

D

1

I

0

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

150100500-50

30

10

1

, DRAIN CURRENT (A)

0.1

D

I

0.01

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DSS

DS(ON)

10

.

TC = 25oC

100µs

1ms

10ms

100ms

100

1000

FIGURE 1. MAXIMUMCONTINUOUSDRAIN CURRENT vs

CASE TEMPERATURE

1.0

0.5

)

qJC

0.01

NORMALIZED

THERMAL RESPONSE (Z

0.001

0.1

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

-5

10

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

FIGURE 2. FORWARD BIAS SAFE OPERATING AREA

P

+ T

10

DM

C

0

NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z

-2

10

-1

10

1/t2

qJC

t

1

t

2

1

10

4-3