Intersil JANSR2N7278 Datasheet

JANSR2N7278

Formerly FRL234R4

June 1998

Features

• 4A, 250V, r

• Total Dose

- Meets Pre-RAD Specifications to 100K RAD (Si)

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 4nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Ordering Information

PART NUMBER PACKAGE BRAND

JANSR2N7278 TO-205AF JANSR2N7278

DS(ON)

= 0.700Ω

2

2

DSS

DM

4A, 250V, 0.700 Ohm, Rad Hard,

N-Channel Power MOSFET

Description

The Intersil Corporation has designed a series of SECOND
GENERATION hardened power MOSFETs of both N-Chan­nel and P-Channel enhancement types with ratings from
100V to 500V, 1A to 60A, and on resistance as low as
25mΩ. Total dose hardness is offered at 100K RAD (Si) and
1000K RAD (Si) with neutron hardness ranging from 1E13
for 500V product to 1E14 for 100V product. Dose rate hard­ness (GAMMA DOT) exists for rates to 1E9 without current
limiting and 2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS) struc­ture. It is specially designed and processed to exhibit mini­mal characteristic changes to total dose (GAMMA) and
neutron (no) exposures. Design and processing efforts are
also directed to enhance survival to dose rate (GAMMA
DOT) exposure.

Also available at other r adiation and screening le v els . See us
on the web, Intersil’s home page:
http://www.semi.harris.com. Contact your local Intersil
Sales Office for additional information.

Die family TA17633.
MIL-PRF-19500/604.

Packaging

Symbol

TO-205AF

G

S

D

D

G

S

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

2-13

File Number 4295.1

JANSR2N7278

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

JANSR2N7278 UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

250 V
250 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

D
D

DM

GS

4A
2A

12 A

±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

T
T

25 W
10 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

AS

S

SM

L

12 A

4A

12 A

-55 to 150
300

o

C

o

C

(Distance >0.063in (1.6mm) from Case, 10s Max)

Weight (Typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 g

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I

Drain to Source On-State Voltage V
Drain to Source On Resistance r

Turn-On Delay Time t

DS(ON)VGS

DS(ON)ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Total Gate Charge (Not on Slash Sheet) Q

g(TOT)

Gate Charge at 10V Q
Threshold Gate Charge (Not on Slash Sheet) Q
Gate Charge Source Q
Gate Charge Drain Q
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

DSSID

DSS

GSS

r

f

g(10)

g(TH)

gs

gd

JC

θ

JA

θ

= 1mA, VGS = 0V 250 - - V

= VDS,

ID = 1mA

VDS = 200V,
VGS = 0V

TC = -55oC - - 5.0 V

= 25oC 2.0 - 4.0 V

T

C

= 125oC 1.0 - - V

T

C

TC = 25oC--25µA

= 125oC - - 250 µA

T

C

VGS = ±20V TC = 25oC - - 100 nA

T

= 125oC - - 200 nA

C

= 10V, ID = 4A - - 2.94 V

= 2A,

VGS = 10V

VDD = 125V, ID = 4A,
RL = 31.3Ω, VGS = 10V,
RGS = 25Ω

TC = 25oC - - 0.700 Ω
T

= 125oC - - 1.68 Ω

C

- - 35 ns

- - 85 ns

- - 195 ns

- - 75 ns
VGS = 0V to 20V VDD = 125V,
VGS = 0V to 10V - - 62 nC

ID = 4A

- - 120 nC

VGS = 0V to 2V - - 4 nC

- - 12 nC

- - 30 nC

- - 5.0

- - 175

o

C/W

o

C/W

2-14

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage V
Reverse Recovery Time t

SD

rr

JANSR2N7278

ISD = 4A 0.6 - 1.8 V
ISD = 4A, dISD/dt = 100A/µs - - 800 ns

Electrical Specifications up to 100K RAD T

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BV
Gate to Source Threshold Volts (Note 3) V
Gate to Body Leakage (Notes 2, 3) I
Zero Gate Leakage (Note 3) I
Drain to Source On-State Volts (Notes 1, 3) V
Drain to Source On Resistance (Notes 1, 3) r

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both V

Typical Performance Curves

5

4

3

, DRAIN (A)

2

D

I

1

0

TC, CASE TEMPERATURE (oC)

= 10V, VDS = 0V and VGS = 0V, VDS = 80% BV

GS

Unless Otherwise Specified

= 25oC, Unless Otherwise Specified

C

DSS

GS(TH)VGS

GSS
DSS

DS(ON)VGS

DS(ON)VGS

VGS = 0, ID = 1mA 250 - V

= VDS, ID = 1mA 2.0 4.0 V
VGS = ±20V, VDS = 0V - 100 nA
VGS = 0, VDS = 200V - 25 µA

= 10V, ID = 4A - 2.94 V

= 10V, ID = 2A - 0.700 Ω

40

10

1

, DRAIN CURRENT (A)

D

I

150100500-50

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

0.1
1

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

10

DSS

.

TC = 25oC

100µs

1ms

10ms

100ms

100

700

FIGURE 1. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

)

JC

θ

1

0.5

0.2

0.1

0.1

0.05

0.01

0.02

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

NORMALIZED

THERMAL IMPEDANCE (Z

0.001

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

2-15

FIGURE 2. FORWARD BIAS SAFE OPERATING AREA

P

DM

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

-2

10

-1

10

2

+ T

JC

C

θ

t

1

t

2

0

10

1

10