Intersil ITF87072DK8T Datasheet

TM

ITF87072DK8T

Data Sheet March 2000

6A, 20V, 0.037 Ohm, Dual P-Channel,

2.5V Specified Power MOSFET
Packaging

SO8 (JEDEC MS-012AA)

BRANDING DASH

5

1

2

3

4

Symbol

DRAIN1(8)
DRAIN1(7)

SOURCE1(1)

GATE1(2)

DRAIN2(6)
DRAIN2(5)

SOURCE2(3)

GATE2(4)

File Number 4812.3

Features

• Ultra Low On-Resistance

-r

-r

-r

= 0.037Ω, VGS= −4.5V

DS(ON)

= 0.039Ω, VGS= −4.0V

DS(ON)

= 0.059Ω, VGS= −2.5V

DS(ON)

• Gate to Source Protection Diode

• Simulation Models

- Temperature Compensated PSPICE™ and SABER
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Switching Time vs R

GS

Curve

Ordering Information

PART NUMBER PACKAGE BRAND

ITF87072DK8T SO8 87072

NOTE: When ordering, use the entire part number. ITF87072DK8T
is available only in tape and reel.

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TA = 25oC, VGS = -4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 25oC, VGS = -4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 100oC, VGS = -4.0V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 100oC, VGS = -2.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Technical Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board with 0.14 in2 (90.3 mm2) copper pad at 1 second.

3. 228oC/W measured using FR-4 board with 0.006 in2 (3.9 mm2) copper pad at 1000 second.

= 25oC, Unless Otherwise Specified

A

DSS

DGR

GS

DM

STG

pkg

ITF87072DK8T UNITS

-20 V

-20 V

±12 V

D
D
D
D

D

L

6.0

6.0

1.5

1.5

Figure 4

2.5
20

-55 to 150

300
260

A
A
A
A

W

mW/oC

o

C

o

C

o

C

1

1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

SABER© is a Copyright of Analogy Inc. , PSPICE® is a registered trademark of MicroSim Corporation.

ITF87072DK8T

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to
Ambient

SWITCHING SPECIFICATIONS (VGS = -2.5V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
SWITCHING SPECIFICATIONS (VGS = -4.5V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at -2V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID
DSS
GSS

GS(TH)VGS

DS(ON)ID

VDS = -20V, VGS = 0V - - -1 µA
VGS = ±12V - - ±10 uA

ID = 1.5A, VGS = -4.0V Figure 8 - 0.030 0.039 Ω
ID = 1.5A, VGS = -2.5V Figure 8 - 0.044 0.059 Ω

R

θJA

Pad Area = 0.14 in2(90.3 mm2) (Note 2) - - 50
Pad Area = 0.027 in2 (17.4 mm2) Figure 20 - - 191
Pad Area = 0.006 in2 (3.9 mm2) Figure 20 - - 228

d(ON)

VDD = -10V, ID = 1.5A
VGS= -2.5V,

r

RGS = 10Ω

d(OFF)

d(ON)

Figures 14, 18, 19

f

VDD = -10V, ID = 6.0A
VGS= -4.5V,

r

RGS = 10Ω

d(OFF)

g(TOT)VGS

g(-2)

g(TH)

ISS

Figures 15, 18, 19

f

VGS = 0V to -2V - 6 - nC
VGS = 0V to -0.5V - 0.7 - nC

gs
gd

VDS = -10V, VGS = 0V,
f = 1MHz

OSS
RSS

Figure 12

= 250µA, VGS = 0V Figure 11 -20 - - V

= VDS, ID = 250µA Figure 10 -0.5 - -1.5 V

= 6.0A, VGS = -4.5V Figures 8, 9 - 0.028 0.037 Ω

o

C/W

o

C/W

o

C/W

-13-ns

-85-ns

-55-ns

-62-ns

-9-ns

-72-ns

-81-ns

-82-ns

= 0V to -4.5V VDD = -10V,

-12-nC
ID = 6.0A,
I

= 1.0mA

g(REF)

Figures 13, 16, 17

- 2.5 - nC

- 3.5 - nC

- 1200 - pF

- 325 - pF

- 130 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD
rr
RR

ISD = -6.0A - -0.85 - V
ISD = -6.0A, dISD/dt = 100A/µs - 24 - ns
ISD = -6.0A, dISD/dt = 100A/µs - 17 - nC

Typical Performance Curves

ITF87072DK8T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs AMBIENT

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.1

0.01

-8

-6
VGS= -4.5V, R

θJA

= 50oC/W

-4

, DRAIN CURRENT (A)

-2

D

I

VGS= -2.5V, R

0

25 50 75 100 125 150

= 228oC/W

θJA

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

R

= 228oC/W

θJA

, NORMALIZED

0.01

θJA

Z

THERMAL IMPEDANCE

0.001

-5

10

-400

-100

-10

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-1

-5

10

-4

10

VGS = -4.5V

-4

10

SINGLE PULSE

3

10

-2

10

-1

10

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0

1

10

t, RECTANGULAR PULSE DURATION (s)

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

= 228oC/W

θJA

VGS = -2.5V

-3

10

-2

10

-1

10

t, PULSE WIDTH (s)

0

10

1

10

P

DM

t

1

t

2

1/t2

x R

θJA

+ T

θJA

A

2

10

TC = 25oC
FOR TEMPERATURES

ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

150 - T

I = I

25

A

125

2

10

3

10

3

10

FIGURE 4. PEAK CURRENT CAPABILITY

3

Typical Performance Curves (Continued)

ITF87072DK8T

-200

-100

-10

, DRAIN CURRENT (A)

OPERATION IN THIS

D

I

AREA MAY BE
LIMITED BY r

-1

-1 -10

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

SINGLE PULSE
TJ = MAX RATED
T

= 25oC

A

R

= 228oC/W

θJA

100µs

1ms

10ms

-50

-25

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

-20

-15

-10

DRAIN CURRENT (A)

D,

I

-5

TJ = 25oC

-0

-1.0 -1.5 -2.0 -2.5 -3.0

TJ = 150oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. TRANSFER CHARACTERISTICS

-25
TA = 25oC

-20

VGS = -4.5V

-15

-10

, DRAIN CURRENT (A)

D

I

-5

0

0 -0.5 -1.0 -1.5 -2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = -3V

V

GS

VGS = -2V

VGS = -1.5V

= -2.5V

80

ID = -1.5A

60

ID = -6A

, DRAIN TO SOURCE

40

ON RESISTANCE (mΩ)

DS(ON)

r

20

-1 -2 -3 -4 -5
, GATE TO SOURCE VOLTAGE (V)

V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.4

1.2
VGS = -4.5V, ID = -6A

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.4

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

0.4

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = -250µA

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

4