Intersil ITF87056DQT Datasheet

ITF87056DQT

Data Sheet March 2000

5A, 20V, 0.045 Ohm, Dual P-Channel,

2.5V Specified Power MOSFET
Packaging

TSSOP-8

5

1

2

4

3

Symbol

DRAIN1(1)

OURCE1(2)

SOURCE1(3)

GATE1(4)

(8) DRAIN2
(7) SOURCE2
(6) SOURCE2
(5) GATE2

File Number 4813.2

Features

• Ultra Low On-Resistance

-r

-r

-r

= 0.045Ω, VGS= −4.5V

DS(ON)

= 0.048Ω, VGS= −4.0V

DS(ON)

= 0.077Ω, VGS= −2.5V

DS(ON)

• 2.5V Gate Drive Capability

• Gate to Source Protection Diode

• Simulation Models

- Temperature Compensated PSPICE™ and SABER
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Switching Time vs R

GS

Curves

Ordering Information

PART NUMBER PACKAGE BRAND

ITF87056DQT TSSOP-8 87056

NOTE: When ordering, use the entire part number.ITF87056DQT2
is available only in tape and reel.

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TA = 25oC, VGS = -4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 25oC, VGS = -4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 100oC, VGS = -4.0V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 100oC, VGS = -2.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. TJ = 25oC to 125oC.

2. 62.5oC/W measured using FR-4 board with 0.50 in2(322.6 mm2) copper pad at 1 second.

3. 230oC/W measured using FR-4 board with 0.0022 in2 (1.44 mm2) copper pad at 1000 seconds.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified

A

DSS

DGR

GS

DM

STG

pkg

ITF87056DQT UNITS

-20 V

-20 V

±12 V

D
D
D
D

D

L

5.0

5.0

3.0

2.5

Figure 4

2.0
16

-55 to 150

300
260

A
A
A
A

W

mW/oC

o

C

o

C

o

C

1

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

SABER© is a Copyright of Analogy Inc. PSPICE® is a registered trademark of MicroSim Corporation.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

ITF87056DQT

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to
Ambient

SWITCHING SPECIFICATIONS (VGS = -2.5V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
SWITCHING SPECIFICATIONS (VGS = -4.5V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at -2V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID
DSS
GSS

GS(TH)VGS

DS(ON)ID

VDS = -20V, VGS = 0V - - -10 µA
VGS = ±12V - - ±10 µA

ID = 3.0A, VGS = -4.0V Figure 8 - 0.039 0.048 Ω
ID = 2.5A, VGS = -2.5V Figure 8 - 0.057 0.077 Ω

R

θJA

Pad Area = 0.50 in2(322.6 mm2) (Note 2) - - 62.5oC/W
Pad Area = 0.017 in2 (11.2 mm2) Figure 20 - - 199
Pad Area = 0.0022 in2 (1.44 mm2) Figure 20 - - 230

d(ON)

VDD = -10V, ID = 2.5A
VGS= -2.5V,

r

RGS = 15Ω

d(OFF)

d(ON)

Figures 14, 18, 19

f

VDD = -10V, ID = 5.0A
VGS= -4.5V,

r

RGS = 16Ω

d(OFF)

g(TOT)VGS

g(-2)

g(TH)

ISS

Figures 15, 18, 19

f

VGS = 0V to -2V - 4.1 - nC
VGS = 0V to -0.5V - 0.5 - nC

gs

gd

VDS = -10V, VGS = 0V,
f = 1MHz

OSS
RSS

Figure 12

= 250µA, VGS = 0V Figure 11 -20 - - V

= VDS, ID = 250µA Figure 10 -0.5 - -1.5 V

= 5.0A, VGS = -4.5V Figures 8, 9 - 0.037 0.045 Ω

o

C/W

o

C/W

- 470 - ns

- 1240 - ns

- 700 - ns

- 775 - ns

- 225 - ns

- 470 - ns

- 1200 - ns

- 800 - ns

= 0V to -4.5V VDD = -10V,

- 8.6 - nC
ID = 5.0A,
I

= 1.0mA

g(REF)

Figures 13, 16, 17

- 1.2 - nC

- 1.8 - nC

- 750 - pF

- 215 - pF

- 100 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD
rr
RR

ISD = -5.0A - -0.86 - V
ISD = -5.0A, dISD/dt = 10A/µs - 40 - ns
ISD = -5.0A, dISD/dt = 10A/µs-5-nC

Typical Performance Curves

ITF87056DQT

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs AMBIENT

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.1

0.01

, NORMALIZED

θJA

0.01

Z

THERMAL IMPEDANCE

0.001

-5

10

-4

10

SINGLE PULSE

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

-6

VGS= -4.5V, R

= 62.5oC/W

θJA

-4

-2

, DRAIN CURRENT (A)

D

I

VGS= -2.5V, R

0

25 50 75 100 125 150

= 230oC/W

θJA

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

R

= 230oC/W

θJA

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

θJA

1/t2

x R

10

θJA

2

t

2

+ T

A

3

10

-300

-100

VGS = -4.5V

-10

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-1

-5

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

VGS = -2.5V

-4

10

-3

10

-2

10

-1

10

0

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

R

= 230oC/W

θJA

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

1

10

150 - T

25

10

125

2

TC = 25oC

A

3

10

Typical Performance Curves (Continued)

ITF87056DQT

-100

-10

-1
, DRAIN CURRENT (A)
I

OPERATION IN THIS
AREA MAY BE

D

LIMITED BY r

R

θJA

-0.1

-1 -10

DS(ON)

= 230oC/W

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

SINGLE PULSE
TJ = MAX RATED
T

= 25oC

A

100ms

1ms

10ms

-40

-15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

-12

-9

-6

DRAIN CURRENT (A)

D,

I

-3

0

-0.5 -1.0 -1.5 -2.0 -2.5

TJ = 150oC

TJ = -55oC

TJ = 25oC

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. TRANSFER CHARACTERISTICS

-15
VGS = -4.5V

-12

VGS = -3V

-9

-6

, DRAIN CURRENT (A)

D

I

-3

0

0 -0.5 -1.0 -1.5 -2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= -2.5V

TA = 25oC

VGS = -2V

VGS = -1.5V

100

90

80

70

ID = -2.5A

60

, DRAIN TO SOURCE

50

ON RESISTANCE (mΩ)

DS(ON)

r

40

30

-1 -2 -3 -4 -5

ID = -5A

, GATE TO SOURCE VOLTAGE (V)

V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

0.8

ON RESISTANCE

0.6

NORMALIZED DRAIN TO SOURCE

0.4

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = -4.5V, ID = -5A

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.4

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

0.4

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = -250µA

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

4