Intersil ITF87012SVT Datasheet

ITF87012SVT

Data Sheet March 2000

6A, 20V, 0.035 Ohm, N-Channel,

2.5V Specified Power MOSFET
Packaging

TSOP-6

1

2

3

4

Symbol

DRAIN(1)

DRAIN(2)

GATE(3)

DRAIN(6)

DRAIN(5)

SOURCE(4)

File Number 4810.2

Features

• Ultra Low On-Resistance

-r

-r

-r

= 0.035Ω, VGS= 4.5V

DS(ON)

= 0.038Ω, VGS= 4.0V

DS(ON)

= 0.045Ω, VGS= 2.5V

DS(ON)

• 2.5 V Gate Drive Capability

• Small Profile Package

• Gate to Source Protection Diode

• Simulation Models

- Temperature Compensated PSPICE™ and SABER
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Switching Time vs R

GS

Curves

Ordering Information

PART NUMBER PACKAGE BRAND

ITF87012SVT TSOP-6 (SC-95) 012

NOTE: Whenordering, usethe entire part number. ITF87012SVTis
available only in tape and reel.

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TA= 25oC, VGS = 4.5V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 25oC, VGS = 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 2.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. TJ = 25oC to 125oC.

2. 62.5oC/W measured using FR-4 board with 0.40 in2 (258.1 mm2) copper pad at 2 second.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified

A

DSS

DGR

GS

DM

STG

pkg

ITF87012SVT UNITS

20 V
20 V

±12V

D
D
D
D

D

L

6.0

5.5

3.5

3.0

Figure 4

2

16

-55 to 150

300
260

A
A
A
A
A

W

mW/oC

o

C

o

C

o

C

1

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

SABER© is a Copyright of Analogy Inc., PSPICE® is a registered trademark of MicroSim Corporation.

www.intersil.com or 321-724-7143

| Copyright © Intersil Corporation 2000

ITF87012SVT

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambi­ent

SWITCHING SPECIFICATIONS (VGS = 2.5V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 2V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID

DSS

GSS

GS(TH)VGS

DS(ON)ID

VDS = 20V, VGS = 0V - - 10 µA
VGS = ±12V - - ±10 uA

ID = 3.5A, VGS = 4.0V (Figure 8) - 0.029 0.038 Ω
ID = 3.0A, VGS = 2.5V (Figure 8) - 0.037 0.045 Ω

R

θJA

Pad Area = 0.40 in2(258.1 mm2) (Note 2) - - 62.5oC/W
Pad Area = 0.0163 in2 (10.54 mm2) (Figure 20) - - 198.2oC/W
Pad Area = 0.0056 in2 (3.60 mm2) (Figure 20) - - 218.4oC/W

d(ON)

d(OFF)

d(ON)

d(OFF)

g(TOT)VGS

g(2)

g(TH)

ISS
OSS
RSS

VDD = 10V, ID = 3.0A
VGS= 2.5V,

r

RGS = 15 Ω
(Figures 14, 18, 19 )

f

VDD = 10V, ID = 6.0A
VGS= 4.5V,

r

RGS = 16 Ω
(Figures 15, 18, 19 )

f

VGS = 0V to 2V - 4.0 - nC
VGS = 0V to 0.5V - 0.30 - nC

gs

gd

VDS = 10V, VGS = 0V,
f = 1MHz
(Figures 12 )

= 250µA, VGS = 0V (Figure 11) 20 - - V

= VDS, ID = 250µA (Figure 10) 0.5 - 1.5 V

= 6.0A, VGS = 4.5V (Figures 8, 9) - 0.028 0.035 Ω

-79-ns

- 315 - ns

- 154 - ns

- 188 - ns

-42-ns

- 142 - ns

- 236 - ns

- 200 - ns

= 0V to 4.5V VDD = 10V,

- 7.7 - nC
ID = 5.5A,
I

= 1.0mA

g(REF)

(Figures 13, 16, 17 )

- 1.1 - nC

- 2.7 - nC

- 655 - pF

- 227 - pF

- 118 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

rr

RR

ISD = 5.5A - 0.84 - V
ISD = 5.5A, dISD/dt = 50A/µs - 22 - ns
ISD = 5.5A, dISD/dt = 50A/µs - 6.1 - nC

Typical Performance Curves

ITF87012SVT

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vs AMBIENT

TEMPERATURE

3

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

0.01

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.001

-5

10

-4

10

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

8

6

VGS= 4.5V, R

= 62.5oC/W

θJA

4

, DRAIN CURRENT (A)

D

I

2

VGS= 2.5V, R

= 218.4oC/W

θJA

0

25

50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

R

= 62.5oC/W

θJA

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

θJA

1/t2

x R

10

θJA

2

+ T

2

A

3

10

500

100

VGS = 2.5V

10

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

1

-5

10

VGS = 4.5V

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

= 62.5oC/W

θJA

-3

10

-2

10

-1

10

0

10

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

TA = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

1

150 - T

25

125

2

10

A

3

10

Typical Performance Curves (Continued)

ITF87012SVT

200

100

10

, DRAIN CURRENT (A)

OPERATION IN THIS

D

I

AREA MAY BE
LIMITED BY r

R

1

1

θJA

V

DS

DS(ON)

= 62.5oC/W

, DRAIN TO SOURCE VOLTAGE (V)

SINGLE PULSE
TJ = MAX RATED

= 25oC

T

A

100µs

1ms

10ms

10 50

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

20

15

10

, DRAIN CURRENT (A)

5

D

I

0

0 0.5 1.0 2.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

TA = 25oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 4.5V
VGS = 3V

VGS = 2.5V

VGS = 2V

VGS = 1.5V

1.5

20

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

15

10

DRAIN CURRENT (A)

D,

5

I

0

0.5 2.0 2.5 3.0

TJ = 150oC

1.0 1.5
VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25oC

TJ = -55oC

FIGURE 6. TRANSFER CHARACTERISTICS

100

80

ID = 6A

60

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

DS(ON)

r

ID =3A

40

20

12345

, GATE TO SOURCE VOLTAGE (V)

V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = 4.5V, ID = 6A

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.4

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

0.4

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

4