Intersil ITF87008DQT Datasheet

ITF87008DQT

Data Sheet March 2000

7.0A, 20V, 0.023 Ohm, Dual N-Channel,

2.5V Specified Power MOSFET
Packaging

TSSOP-8

5

1

2

4

3

Symbol

DRAIN1(1)
SOURCE1(2)
SOURCE1(3)

GATE1(4)

(8) DRAIN2
(7) SOURCE2
(6) SOURCE2
(5) GATE2

File Number 4814.2

Features

• Ultra Low On-Resistance

-r

-r

-r

= 0.023Ω, VGS= 4.5V

DS(ON)

= 0.024Ω, VGS= 4.0V

DS(ON)

= 0.029Ω, VGS= 2.5V

DS(ON)

• 2.5 Volt Gate Drive Capability

• Gate to Source Protection Diode

• Simulation Models

- Temperature Compensated PSPICE™ and SABER
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Switching Time vs R

GS

Curves

Ordering Information

PART NUMBER PACKAGE BRAND

ITF87008DQT TSSOP-8 87008

NOTE: When ordering, use the entirepart number. ITF87008DQT2
is available only in tape and reel.

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TA = 25oC, VGS = 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 25oC, VGS = 4.0V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 100oC, VGS = 4.0V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 100oC, VGS = 2.5V) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

NOTES:

1. TJ = 25oC to 125oC.

2. 62.5oC/W measured using FR-4 board with 0.50 in2(322.6 mm2) copper pad at 1 second.

3. 230oC/W measured using FR-4 board with 0.0022 in2 (1.44 mm2) copper pad at 1000 seconds.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

= 25oC, Unless Otherwise Specified

A

DSS

DGR

GS

DM

STG

pkg

ITF87008DQT UNITS

20 V
20 V

±12 V

D
D
D
D

D

L

7.0

7.0

2.0

2.0

Figure 4

2.0
16

-55 to 150

300
260

A
A
A
A

W

mW/oC

o

C

o

C

o

C

1

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

SABER© is a Copyright of Analogy Inc. PSPICE® is a registered trademark of MicroSim Corporation.

1-888-INTERSIL or 321-724-7143

| Copyright © Intersil Corporation 2000

ITF87008DQT

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to
Ambient

SWITCHING SPECIFICATIONS VGS = 2.5V
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
SWITCHING SPECIFICATIONS VGS = 4.5V
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 2V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID
DSS
GSS

GS(TH)VGS

DS(ON)ID

VDS = 20V, VGS = 0V - - 10 µA
VGS = ±12V - - ±10 µA

ID = 2.0A, VGS = 4.0V Figure 8 - 0.018 0.024 Ω
ID = 2.0A, VGS = 2.5V Figure 8 - 0.022 0.029 Ω

R

θJA

Pad Area = 0.50 in2(322.6 mm2) (Note 2) - - 62.5oC/W
Pad Area = 0.017 in2 (11.2 mm2) Figure 20 - - 199
Pad Area = 0.0022 in2 (1.44 mm2) Figure 20 - - 230

d(ON)

VDD = 10V, ID = 2.0A
VGS= 2.5V,

r

RGS = 12Ω

d(OFF)

d(ON)

Figures 14, 18, 19

f

VDD = 10V, ID = 7.0A
VGS= 4.5V,

r

RGS = 13Ω

d(OFF)

g(TOT)VGS

g(2)

g(TH)

ISS

Figures 15, 18, 19

f

VGS = 0V to 2.0V - 5.7 - nC
VGS = 0V to 0.5V - 0.5 - nC

gs

gd

VDS = 10V, VGS = 0V,
f = 1MHz

OSS
RSS

Figure 12

= 250µA, VGS = 0V Figure 11 20 - - V

= VDS, ID = 250µA Figure 10 0.5 - 1.5 V

= 7.0A, VGS = 4.5V Figures 8,9 - 0.017 0.023 Ω

o

C/W

o

C/W

- 110 - ns

- 475 - ns

- 180 - ns

- 265 - ns

-60-ns

- 185 - ns

- 300 - ns

- 280 - ns

= 0V to 4.5V VDD = 10V,

- 9.7 - nC
ID = 7.0A,
I

= 1.0mA

g(REF)

Figures 13, 16, 17

- 1.1 - nC

- 2.9 - nC

- 980 - pF

- 300 - pF

- 160 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD
rr
RR

ISD = 7.0A - 0.83 - V
ISD = 7.0A, dISD/dt = 15A/µs - 44 - ns
ISD = 7.0A, dISD/dt = 15A/µs - 2.2 - nC

Typical Performance Curves

ITF87008DQT

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.1

0.01

, NORMALIZED

θJA

Z

0.01

THERMAL IMPEDANCE

0.001

-5

10

-4

10

10

-3

SINGLE PULSE

-2

10

t, RECTANGULAR PULSE DURATION (s)

8

6

VGS= 4.5V, R

= 62.5oC/W

θJA

4

, DRAIN CURRENT (A)

D

2

I

VGS= 2.5V, R

= 230oC/W

θJA

0

25

50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

R

θJA

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

θJA

1/t2

x R

10

θJA

2

+ T

= 230oC/W

t

2

A

3

10

400

100

, PEAK CURRENT (A)

DM

I

VGS = 4.5V

10

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

2

-5

10

VGS = 2.5V

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

= 230oC/W

θJA

-3

10

-2

10

-1

10

0

10

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

1

150 - T

25

125

2

10

A

3

10

Typical Performance Curves (Continued)

ITF87008DQT

200
100

10

OPERATION IN THIS
AREA MAY BE

1

, DRAIN CURRENT (A)

LIMITED BY r

D

I

R

= 230oC/W

0.1

θJA

V

DS

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

SINGLE PULSE
TJ = MAX RATED

= 25oC

T

A

10 401

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

25

20

15

VGS = 4.5V
V

= 3.0V

GS

V

= 2.5V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

TA = 25oC

VGS = 2.0V

100µs

1ms

10ms

25

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

20

15

10

DRAIN CURRENT (A)

D,

I

5

0

0.5 1.0 1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 150oC

TJ = -55oC

TJ = 25oC

FIGURE 6. TRANSFER CHARACTERISTICS

40

35

30

ID = 1A

ID = 7A

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

10

, DRAIN CURRENT (A)

D

I

5

VGS = 1.5V

0

0 0.5 1.0 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

1.5

25

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

20

DS(ON)

r

15

12345

, GATE TO SOURCE VOLTAGE (V)

V

GS

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = 4.5V, ID = 7A

1.4

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

0.4

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4

FIGURE 10. NORMALIZED GATETHRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE