Intersil ITF86182SK8T Datasheet

ITF86182SK8T

[ /Title
(ITF86
182SK
8T)
/Sub­ject
(11A,
30V,

0.0115
Ohm,
P­Chan­nel,
Logic
Level,
Power
MOS­FET)
/Author
()
/Key­words
(Inter­sil,
Semi­conduc­tor, P­Chan­nel,
Logic
Level
Power
MOS­FET,
SO8)

Data Sheet January 2000

11A, 30V, 0.0115 Ohm, P-Channel, Logic
Level, Power MOSFET

Packaging

SO8 (JEDEC MS-012AA)

BRANDING DASH

5

1

2

3

4

Symbol

SOURCE(1)

SOURCE(2)

SOURCE(3)

GATE(4)

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TA= 25oC, VGS = 10V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 25oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

DRAIN(8)

DRAIN(7)

DRAIN(6)

DRAIN(5)

Features

• Ultra Low On-Resistance

-r

-r

-r

• Gate to Source Protection Diode

• Simulation Models

- Temperature Compensated PSPICE™ and SABER
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Switching Time vs R

= 0.0115Ω, VGS= −10V

DS(ON)

= 0.016Ω, VGS= −4.5V

DS(ON)

= 0.0175Ω, VGS= −4V

DS(ON)

Ordering Information

PART NUMBER PACKAGE BRAND

ITF86182SK8T SO8 86182

NOTE: When ordering, use the entire part number. ITF86182SK8T
is available only in tape and reel.

DSS

DGR

STG

GS

DM

pkg

File Number 4797.2

Curves

GS

ITF86182SK8T UNITS

-30 V

-30 V

±20 V

D
D
D
D

D

L

-11.0

-9.0

-6.0

-6.0

Figure 4

2.5
20

-55 to 150

300
260

A
A
A
A

W

mW/oC

o

C

o

C

o

C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.

1

SABER© is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

| Copyright © Intersil Corporation 2000

ITF86182SK8T

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

ITF86182SK8TOFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I

DSSID
DSS
GSS

= 250µA, VGS = 0V Figure 11 -30 - - V
VDS = -30V, VGS = 0V - - -1 µA
VGS = ±20V - - ±10 uA

ITF86182SK8TON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

GS(TH)VGS

DS(ON)ID

= -11.0A, VGS = -10V Figures 8, 9 - 0.0085 0.0115 Ω
ID = -6.0A, VGS = -4.5V Figure 8 - 0.011 0.016 Ω
ID = -6.0A, VGS = -4.0V Figure 8 - 0.012 0.0175 Ω

ITF86182SK8TTHERMAL SPECIFICATIONS

Thermal Resistance Junction to
Ambient

R

θJA

Pad Area = 0.76 in2(490.3 mm2) (Note 2) - - 50
Pad Area = 0.054 in2 (34.8 mm2) Figure 20 - - 152
Pad Area = 0.0115 in2 (7.42 mm2) Figure 20 - - 189

ITF86182SK8TSWITCHING SPECIFICATIONS (VGS = -4.5V)
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t

VDD = -15V, ID = -6.0A
VGS= -4.5V,

r

RGS = 4.9Ω
Figures 14, 18, 19

f

ITF86182SK8TSWITCHING SPECIFICATIONS (VGS = -10V)
Turn-On Delay Time t

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t

VDD = -15V, ID = -11.0A
VGS= -10V,

r

RGS = 4.9Ω
Figures 15, 18, 19

f

ITF86182SK8TGATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at -5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

g(TOT)VGS

g(-5)

g(TH)

VGS = 0V to -5V - 37 - nC
VGS = 0V to -1V - 3.4 - nC

gs
gd

ITF86182SK8TCAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

ISS
OSS
RSS

VDS = -25V, VGS = 0V,
f = 1MHz
Figure 12

= VDS, ID = 250µA Figure 10 -1.0 - -2.5 V

o

C/W

o

C/W

o

C/W

-20-ns

-80-ns

-70-ns

-80-ns

-16-ns

-85-ns

- 100 - ns

- 105 - ns

= 0V to -10V VDD = -15V,

-67-nC
ID = -6.0A,
I

= -1.0mA

g(REF)

Figures 13, 16, 17

-8-nC

- 13.5 - nC

- 3375 - pF

- 790 - pF

- 375 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

rr

RR

ISD = -6.0A - -0.8 - V
ISD = -6.0A, dISD/dt = 100A/µs - 33 - ns
ISD = -6.0A, dISD/dt = 100A/µs - 20 - nC

Typical Performance Curves

ITF86182SK8T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZEDPOWER DISSIPATIONvs AMBIENT

TEMPERATURE

3

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

1

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

0.01

Z

THERMAL IMPEDANCE

SINGLE PULSE

0.001

-5

10

-4

10

-3

10

10

t, RECTANGULAR PULSE DURATION (s)

-12
VGS= -10V, R

θJA

= 50oC/W

-9

-6

, DRAIN CURRENT (A)

-3

D

I

VGS= -4.0V, R

= 189oC/W

θJA

0

25 50 75 100 120 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUSDRAIN CURRENT vs

AMBIENT TEMPERATURE

R

= 50oC/W

θJA

P

DM

t

1

t

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

-1

10

0

10

1

10

θJA

1/t2

10

x R

2

+ T

θJA

A

2

3

10

-1000

-100

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-10

-5

-5

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

θJA

VGS = -4.5V

-4

10

-3

10

-2

10

-1

10

0

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

= 50oC/W

TC = 25oC
FOR TEMPERATURES

ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I

1

10

150 - T

25

125

2

10

A

3

10

Typical Performance Curves (Continued)

ITF86182SK8T

-300

-100

-10

OPERATION IN THIS

, DRAIN CURRENT (A)

D

I

AREA MAY BE
LIMITED BY r

-1

-1 -10 -100

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

SINGLE PULSE
TJ = MAX RATED
T

A

= 25oC

R

θJA

100µs

1ms

10ms

= 50oC/W

-40

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

= 15V

DD

-30

-20
TJ = 150oC

DRAIN CURRENT (A)

-10

D,

I

0

-1 -1.5 -2.0 -2.5 -3.0

TJ = 25oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. TRANSFER CHARACTERISTICS

-40

-30

-20

V

= -10V

GS

VGS = -5V

= -4.5V

V

GS

VGS = -3.5V

25

ID = -11A

20

15

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = -3V

, DRAIN CURRENT (A)

-10

D

I

0

TA = 25oC

0 -0.2 -0.4 -0.6 -0.8 -1

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

, DRAIN TO SOURCE

10

ON RESISTANCE (mΩ)

DS(ON)

r

5

ID = -2A

-2 -4 -6 -8 -10
VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCEON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.4

1.2
VGS = -10V, ID = -11A

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

1.2

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = -250µA

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

4

FIGURE 10. NORMALIZED GATETHRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE