Intersil ITF86174SQT Datasheet

ITF86174SQT
Data Sheet March 2000
9A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
Packaging
TSSOP-8
5
1
2
4
3
Symbol
DRAIN(1)
SOURCE(2)
SOURCE(3)
GATE(4)
DRAIN(8)
SOURCE(7)
SOURCE(6)
DRAIN(5)
File Number 4799.3
Features
-r
-r
-r
= 0.016Ω, VGS= −10V
DS(ON)
= 0.024Ω, VGS= −4.5V
DS(ON)
= 0.027Ω, VGS= −4V
DS(ON)
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
• Switching Time vs R
GS
Curves
Ordering Information
PART NUMBER PACKAGE BRAND
ITF86174SQT TSSOP-8 86174
NOTE: When ordering, use the entire part number. ITF86174SQT2 is available only in tape and reel.
Absolute Maximum Ratings T
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (TA = 25oC, VGS = 10V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TA = 25oC, VGS = 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TA = 100oC, VGS = 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TA = 100oC, VGS = 4.0V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB370. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
1. TJ = 25oC to 125oC.
2. 62.5oC/W measured using FR-4 board with 1.0in2 (645.2mm2) copper pad at 10s.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
= 25oC, Unless Otherwise Specified
A
CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.
SABER© is a Copyright of Analogy Inc.
ITF86174SQT UNITS
DSS
DGR
GS
D D D D
DM
D
STG
L
pkg
PSPICE® is a registered trademark of MicroSim Corporation.
| 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
-30 V
-30 V
±20 V
9.0
7.0
4.5
4.0
Figure 4
2.0 16
-55 to 150
300 260
A A A A
W
mW/oC
o
C
o
C
o
C
ITF86174SQT
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV Zero Gate Voltage Drain Current I Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Ambient
SWITCHING SPECIFICATIONS VGS = -4.5V Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t SWITCHING SPECIFICATIONS VGS = -10V Turn-On Delay Time t Rise Time t Turn-Off Delay Time t Fall Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q Gate Charge at -5V Q Threshold Gate Charge Q Gate to Source Gate Charge Q Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C
DSSID DSS GSS
GS(TH)VGS
DS(ON)ID
VDS = -30V, VGS = 0V - - -1 µA VGS = ±20V - - ±10 µA
ID = 4.5A, VGS = -4.5V Figure 8 - 0.018 0.024 ID = 4.0A, VGS = -4.0V Figure 8 - 0.020 0.027
R
θJA
Pad Area = 1.0 in2(645.2 mm2) (Note 2) - - 62.5oC/W Pad Area = 0.035 in2 (22.4 mm2) Figure 20 - - 165.4oC/W Pad Area = 0.0045 in2 (2.88 mm2) Figure 20 - - 206.8oC/W
d(ON)
VDD = -15V, ID = 4.5A VGS= -4.5V,
r
RGS = 6.8
d(OFF)
d(ON)
Figures 14, 18, 19
f
VDD = -15V, ID = 9.0A VGS= -10V,
r
RGS = 7.5
d(OFF)
g(TOT)VGS
g(-5)
g(TH)
ISS
Figures 15, 18, 19
f
VGS = 0V to -5V - 22 - nC VGS = 0V to -1V - 2 - nC
gs
gd
VDS = -25V, VGS = 0V, f = 1MHz
OSS RSS
Figure 12
= 250µA, VGS = 0V Figure 11 -30 - - V
= VDS, ID = 250µA Figure 10 -1.0 - -2.5 V
= 9.0A, VGS = -10V Figures 8, 9 - 0.012 0.016
-19-ns
-64-ns
-40-ns
-48-ns
-13-ns
-52-ns
-67-ns
-62-ns
= 0V to -10V VDD = -15V,
-39-nC ID = 7.0A, I
= -1.0mA
g(REF)
Figures 13, 16, 17
- 5.7 - nC
- 8.8 - nC
- 2000 - pF
- 475 - pF
- 215 - pF
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V Reverse Recovery Time t Reverse Recovered Charge Q
2
SD rr RR
ISD = -9.0A - -0.8 - V ISD = -9.0A, dISD/dt = 100A/µs - 26 - ns ISD = -9.0A, dISD/dt = 100A/µs - 14 - nC
Typical Performance Curves
ITF86174SQT
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
125
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
3
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJA
Z
0.01
THERMAL IMPEDANCE
0.001
-5
10
-4
10
10
-3
SINGLE PULSE
-2
10
t, RECTANGULAR PULSE DURATION (s)
-10
-8 VGS= -10V, R
= 62.5oC/W
θJA
-6
-4
, DRAIN CURRENT (A)
D
I
-2
VGS= -4.0V, R
= 187.7oC/W
θJA
0
25
50 75 100 125 150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
R
θJA
P
DM
t
1
NOTES: DUTY FACTOR: D = t PEAK TJ = PDM x Z
-1
10
0
10
1
10
θJA
1/t2
x R
10
θJA
2
= 62.5oC/W
t
2
+ T
A
3
10
-800
-100
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE MAY LIMIT CURRENT
-10 IN THIS REGION
-5
-5
10
VGS = -4.0V
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
R
= 62.5oC/W
θJA
-3
10
-2
10
-1
10
0
10
10
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
3
TC = 25oC FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
1
150 - T
25
125
2
10
A
3
10
Typical Performance Curves (Continued)
ITF86174SQT
-500
-100
-10
, DRAIN CURRENT (A)
D
I
-1
R
= 62.5oC/W
θJA
OPERATION IN THIS AREA MAY BE LIMITED BY r
DS(ON)
, DRAIN TO SOURCE VOLTAGE (V)
V
DS
SINGLE PULSE TJ = MAX RATED TA = 25oC
-10 -60-1
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
-40
-30
-20
= -10V
V
GS
VGS = -5V V
= -4.5V
GS
= -4V
V
GS
VGS = -3.5V
VGS = -3V
100µs
1ms
10ms
-40
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V
= -15V
DD
-30
-20
DRAIN CURRENT (A)
-10
D,
I
0
-1.5 -2.0 -2.5 -3.0 -3.5
TJ = 150oC
TJ = -55oC
TJ = 25oC
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
30
ID = -9A
25
20
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
, DRAIN CURRENT (A)
-10
D
I
TA = 25oC
0
0 -0.5 -1.0 -1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
, DRAIN TO SOURCE
ON RESISTANCE (m)
DS(ON)
r
ID = -1A
15
10
-3 -5 -7 -9
-2 -4 -6 -8 -10 , GATE TO SOURCE VOLTAGE (V)
V
GS
FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.6
PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
ON RESISTANCE
0.8
NORMALIZED DRAIN TO SOURCE
0.6
-80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
VGS = -10V, ID = -9A
1.2
1.0
0.8
NORMALIZED GATE
THRESHOLD VOLTAGE
0.6
-80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)
VGS = VDS, ID = -250µA
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4
FIGURE 10. NORMALIZED GATETHRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
Loading...
+ 8 hidden pages