Intersil ITF86172SK8T Datasheet

ITF86172SK8T

[ /Title
(HUF7
6400S
K8)
/Sub­ject
(60V,

0.072
Ohm,
4A, N­Chan­nel,
Logic
Level
UltraFE
T
Power
MOS­FET)
/Author
()
/Key­words
(Inter­sil
Semi­conduc­tor, N­Chan­nel,
Logic
Level
UltraFE
T
Power

Data Sheet January 2000

10A, 30V, 0.016 Ohm, P-Channel, Logic
Level, Power MOSFET

Packaging

SO8 (JEDEC MS-012AA)

BRANDING DASH

5

1

2

3

4

Symbol

SOURCE(1)

SOURCE(2)

SOURCE(3)

GATE(4)

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TA= 25oC, VGS = 10V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 25oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA= 100oC, VGS = 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. TJ = 25oC to 125oC.

2. 50oC/W measured using FR-4 board with 0.76 in2 (490.3 mm2) copper pad at 10 second.

DRAIN(8)

DRAIN(7)

DRAIN(6)

DRAIN(5)

= 25oC, Unless Otherwise Specified

A

Features

• Ultra Low On-Resistance

-r

-r

-r

• Gate to Source Protection Diode

• Simulation Models

- Temperature Compensated PSPICE™ and SABER
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Switching Time vs R

= 0.016Ω, VGS= −10V

DS(ON)

= 0.023Ω, VGS= −4.5V

DS(ON)

= 0.026Ω, VGS= −4V

DS(ON)

GS

Ordering Information

PART NUMBER PACKAGE BRAND

ITF86172SK8T SO8 86172

NOTE: When ordering, use the entire part number. ITF86172SK8T
is available only in tape and reel.

DSS

DGR

GS

D
D
D
D

DM

D

STG

L

pkg

File Number 4809.1

Curves

ITF86172SK8T UNITS

-30 V

-30 V

±20 V

10.0

8.0

5.0

5.0

Figure 4

2.5
20

-55 to 150

300
260

A
A
A
A

W

mW/oC

o

C

o

C

o

C

1

SABER© is a Copyright of Analogy Inc.http://www.intersil.com or 321-727-9207

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

| Copyright © Intersil Corporation 1999

ITF86172SK8T

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Ambi­ent

SWITCHING SPECIFICATIONS (VGS = -4.5V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
SWITCHING SPECIFICATIONS (VGS = -10V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at -5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID
DSS
GSS

GS(TH)VGS

DS(ON)ID

VDS = -30V, VGS = 0V - - -1 µA
VGS = ±20V - - ±10 uA

ID = 5.0A, VGS = -4.5V Figure 8 - 0.017 0.023 Ω
ID = 5.0A, VGS = -4.0V Figure 8 - 0.019 0.026 Ω

R

θJA

Pad Area = 0.76 in2(490.3 mm2) (Note 2) - - 50
Pad Area = 0.054 in2 (34.8 mm2) Figure 20 - - 152
Pad Area = 0.0115 in2 (7.42 mm2) Figure 20 - - 189

d(ON)

d(OFF)

d(ON)

d(OFF)

g(TOT)VGS

g(-5)

g(TH)

ISS
OSS
RSS

VDD = -15V, ID = 5.0A
VGS= -4.5V,

r

RGS = 7.5Ω
Figures 14, 18, 19

f

VDD = -15V, ID = 10.0A
VGS= -10V,

r

RGS = 7.5Ω
Figures 15, 18, 19

f

VGS = 0V to -5V - 22 - nC
VGS = 0V to -1V - 2 - nC

gs
gd

VDS = -25V, VGS = 0V,
f = 1MHz
Figure 12

= 250µA, VGS = 0V Figure 11 -30 - - V

= VDS, ID = 250µA Figure 10 -1.0 - -2.5 V

= 10.0A, VGS = -10V Figures 8,9 - 0.0125 0.016 Ω

o

C/W

o

C/W

o

C/W

-20-ns

-87-ns

-48-ns

-62-ns

-12-ns

-81-ns

-76-ns

-80-ns

= 0V to -10V VDD = -15V,

-38-nC
ID = 8.0A,
I

= -1.0mA

g(REF)

Figures 13, 16, 17

- 6.8 - nC

- 9.2 - nC

- 1930 - pF

- 470 - pF

- 215 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD
rr
RR

ISD = -8.0A - -0.8 - V
ISD = -8.0A, dISD/dt = 100A/µs - 26 - ns
ISD = -8.0A, dISD/dt = 100A/µs - 13 - nC

Typical Performance Curves

ITF86172SK8T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

3

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

Z

0.01

THERMAL IMPEDANCE

0.001

-5

10

-4

10

10

-3

SINGLE PULSE

-2

10

t, RECTANGULAR PULSE DURATION (s)

-12

-10

VGS= -10V, R

θJA

= 50oC/W

-8

-6

-4

, DRAIN CURRENT (A)

D

I

-2

VGS= -4.0V, R

= 189oC/W

θJA

0

25

50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

R

θJA

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

θJA

1/t2

x R

10

θJA

2

+ T

= 50oC/W

t

2

A

3

10

-800

-100

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE

-10

MAY LIMIT CURRENT
IN THIS REGION

-5

-5

10

VGS = -4.5V

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

= 50oC/W

θJA

-3

10

-2

10

-1

10

0

10

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

TC = 25oC
FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

1

150 - T

25

125

2

10

A

3

10

Typical Performance Curves (Continued)

ITF86172SK8T

-500

-100

-10

, DRAIN CURRENT (A)

D

I

-1

R

= 50oC/W

θJA

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

DS(ON)

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

-10 -60-1

SINGLE PULSE
TJ = MAX RATED

= 25oC

T

A

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

-40

-30

-20

, DRAIN CURRENT (A)

-10

D

I

= -10V

V

GS

VGS = -5V
V

= -4.5V

GS

V

= -4V

GS

TA = 25oC

0

0 -0.5 -1.0 -1.5

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = -3.5V

VGS = -3V

100µs

1ms

10ms

-40

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

-30

-20

DRAIN CURRENT (A)

D,

-10

I

0

-1.5 -2.0 -2.5 -3.0 -3.5

TJ = 150oC

TJ = 25oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

FIGURE 6. TRANSFER CHARACTERISTICS

30

25

20

ID = -2A

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

15

DS(ON)

r

10

-2 -4 -6 -8 -10

ID = -10A

-3 -5 -7 -9
, GATE TO SOURCE VOLTAGE (V)

V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

0.5

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = -10V, ID = -10A

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

1.0

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.6

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = -250µA

FIGURE 10. NORMALIZED GATETHRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

4