Intersil ITF86130SK8T Datasheet
TM
ITF86130SK8T
Data Sheet June 2000
14A, 30V, 0.0078 Ohm, N-Channel, Logic
Level, Power MOSFET
Packaging
SO8 (JEDEC MS-012AA)
BRANDING DASH
5
1
2
3
4
Symbol
SOURCE(1)
SOURCE(2)
SOURCE(3)
GATE(4)
DRAIN(8)
DRAIN(7)
DRAIN(6)
DRAIN(5)
File Number 4798.4
Features
• Ultra Low On-Resistance
-r
-r
-r
= 0.0078Ω, VGS= 10V
DS(ON)
= 0.010Ω, VGS= 4.5V
DS(ON)
= 0.012Ω, VGS= 4.0V
DS(ON)
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting
Area
• Switching Time vs R
GS
Curves
Ordering Information
PART NUMBER PACKAGE BRAND
ITF86130SK8T SO8 86130
NOTE: When ordering, use the entire part number. ITF86130SK8T
is available only in tape and reel.
Absolute Maximum Ratings T
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Continuous (TA= 25oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TA= 100oC, VGS = 4.5V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Continuous (TA= 100oC, VGS = 4.0V) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Tech brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
NOTES:
1. TJ = 25oC to 125oC.
2. 50oC/W measured using FR-4 board with 0.76in2 (490.3mm2) copper pad at 10s.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1
= 25oC, Unless Otherwise Specified
A
ITF86130SK8T UNITS
DSS
DGR
GS
D
D
D
D
DM
D
STG
L
pkg
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000
PSPICE® is a registered trademark of MicroSim Corporation.
30 V
30 V
±20 V
14.0
12.0
7.0
7.0
Figure 4
2.5
20
-55 to 150
300
260
A
A
A
A
A
W
mW/oC
o
C
o
C
o
C
ITF86130SK8T
Electrical Specifications T
= 25oC, Unless Otherwise Specified
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage V
Drain to Source On Resistance r
THERMAL SPECIFICATIONS
Thermal Resistance Junction to
Ambient
SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
GATE CHARGE SPECIFICATIONS
Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q
CAPACITANCE SPECIFICATIONS
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
DSSID
DSS
GSS
GS(TH)VGS
DS(ON)ID
VDS = 30V, VGS = 0V - - 10 µA
VGS = ±20V - - ±10 uA
ID = 7.0A, VGS = 4.5V (Figure 8) - 0.007 0.010 Ω
ID = 7.0A, VGS = 4.0V (Figure 8) - 0.008 0.012 Ω
R
θJA
Pad Area = 0.76 in2(490.3 mm2) (Note 2) - - 50
Pad Area = 0.054 in2 (34.8 mm2) (Figure 20) - - 152
Pad Area = 0.0115 in2 (7.42 mm2) (Figure 20) - - 189
d(ON)
VDD = 15V, ID = 7.0A,VGS= 4.5V,
RGS = 4.7Ω (Figures 14, 18, 19)
r
d(OFF)
f
d(ON)
VDD = 15V, ID = 14.0A, VGS= 10V,
RGS = 5.1Ω
r
(Figures 15, 18, 19)
d(OFF)
f
g(TOT)VGS
g(5)
g(TH)
ISS
VGS = 0V to 5V - 31.5 - nC
VGS = 0V to 1V - 3 - nC
gs
gd
VDS = 25V, VGS = 0V,
f = 1MHz
OSS
RSS
(Figure 12)
= 250µA, VGS = 0V (Figure 11) 30 - - V
= VDS, ID = 250µA (Figure 10) 1.5 - 2.5 V
= 14.0A, VGS = 10V (Figures 8, 9) - 0.0058 0.0078 Ω
o
C/W
o
C/W
o
C/W
-23-ns
-84-ns
-33-ns
-42-ns
-14-ns
- 106 - ns
-49-ns
-69-ns
= 0V to 10V VDD = 15V,
-58-nC
ID = 12.0A,
I
= 1.0mA,
g(REF)
(Figures 13, 16, 17)
- 9.5 - nC
-12-nC
- 3050 - pF
- 675 - pF
- 285 - pF
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q
2
SD
RR
ISD = 12.0A - 0.79 - V
rr
ISD = 12.0A, dISD/dt = 100A/µs - 33 - ns
ISD = 12.0A, dISD/dt = 100A/µs - 32 - nC
Typical Performance Curves
ITF86130SK8T
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 150
125
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vsAMBIENT
TEMPERATURE
3
DUTY CYCLE - DESCENDING ORDER
0.5
1
0.2
0.1
0.05
0.02
0.01
0.1
, NORMALIZED
θJA
Z
0.01
THERMAL IMPEDANCE
0.001
-5
10
-4
10
SINGLE PULSE
-3
10
-2
10
t, RECTANGULAR PULSE DURATION (s)
15
12
VGS= 10V, R
θJA
= 50oC/W
9
6
, DRAIN CURRENT (A)
D
I
3
0
25
VGS= 4.0V, R
50 75 100 125 150
= 189oC/W
θJA
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAINCURRENT vs
AMBIENT TEMPERATURE
R
θJA
P
DM
t
1
NOTES:
DUTY FACTOR: D = t
PEAK TJ = PDM x Z
-1
10
0
10
1
10
θJA
1/t2
x R
10
θJA
2
+ T
= 50oC/W
t
2
A
3
10
2000
1000
100
, PEAK CURRENT (A)
DM
I
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10
-5
10
VGS = 4.5V
-4
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
R
= 50oC/W
θJA
-3
10
-2
10
-1
10
0
10
10
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
3
TA = 25oC
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
1
150 - T
25
125
2
10
A
3
10
Typical Performance Curves (Continued)
ITF86130SK8T
500
100
10
OPERATION IN THIS
, DRAIN CURRENT (A)
D
I
AREA MAY BE
LIMITED BY r
1
1
V
DS
R
θJA
SINGLE PULSE
TJ = MAX RATED
= 25oC
T
A
DS(ON)
10 100
, DRAIN TO SOURCE VOLTAGE (V)
= 50oC/W
100µs
1ms
10ms
60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
= 15V
V
50
DD
40
30
20
, DRAIN CURRENT (A)
D
I
10
0
2.0 2.5 3.0 3.5 4.0
TJ = 150oC
TJ = -55oC
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. TRANSFER CHARACTERISTICS
60
VGS = 10V
VGS = 5V
50
VGS = 4.5V
40
30
PULSE DURATION = 80µs
20
, DRAIN CURRENT (A)
D
I
10
0
0 0.2 0.4 0.6 1.0
TA = 25oC
VDS, DRAIN TO SOURCE VOLTAGE (V)
DUTY CYCLE = 0.5% MAX
VGS = 4V
VGS = 3.5V
VGS = 3V
0.8
20
16
12
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
ID = 5A
8
DS(ON)
r
4
246810
ID = 14A
, GATE TO SOURCE VOLTAGE (V)
V
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 25oC
FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1.3
1.0
ON RESISTANCE
NORMALIZED DRAIN TO SOURCE
0.7
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
VGS = 10V, ID = 14A
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.2
1.0
0.8
NORMALIZED GATE
0.6
THRESHOLD VOLTAGE
0.4
-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
VGS = VDS, ID = 250µA
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
4
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