Intersil ITF86116SQT Datasheet

ITF86116SQT

Data Sheet March 2000

10A, 30V, 0.012 Ohm, N-Channel, Logic
Level, Power MOSFET

Packaging

TSSOP8

5

1

2

4

3

Symbol

DRAIN(1)

SOURCE(2)

SOURCE(3)

DRAIN(8)

SOURCE(7)

SOURCE(6)

File Number 4808.2

Features

• Ultra Low On-Resistance

-r

-r

= 0.012Ω, VGS= 10V

DS(ON)

= 0.016Ω, VGS= 4.5V

DS(ON)

• Gate to Source Protection Diode

• Simulation Models

- Temperature Compensated PSPICE™ and SABER
Electrical Models

- Spice and SABER Thermal Impedance Models

- www.intersil.com

• Peak Current vs Pulse Width Curve

• Transient Thermal Impedance Curve vs Board Mounting
Area

• Switching Time vs R

GS

Curves

Ordering Information

PART NUMBER PACKAGE BRAND

ITF86116SQT TSSOP-8 86116

NOTE: When ordering, use the entire part number. ITF86116SQT2
is available only in tape and reel.

GATE(4)

Absolute Maximum Ratings T

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

Continuous (TA = 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 25oC, VGS = 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Continuous (TA = 100oC, VGS = 4.5V) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Technical Brief TB370 . . . . . . . . . . . . . . . . . . . . . . . . . . .T

NOTES:

1. TJ = 25oC to 125oC.

2. 62.5oC/W measured using FR-4 board with 1.00 in2 (645.2 mm2) copper pad at 10 second.

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

DRAIN(5)

= 25oC, Unless Otherwise Specified

A

DSS

DGR

GS

DM

STG

pkg

ITF86116SQT UNITS

30 V
30 V

±20 V

D
D
D

D

L

10.0

9.0

5.0

Figure 4

2

16

-55 to 150

300
260

A
A
A
A

W

mW/oC

o

C

o

C

o

C

1

CAUTION: These devices are sensitive to electrostatic discharge. Follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

SABER© is a Copyright of Analogy Inc. www.intersil.com or 321-724-7143

| Copyright © Intersil Corporation 2000

ITF86116SQT

Electrical Specifications T

= 25oC, Unless Otherwise Specified

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage V
Drain to Source On Resistance r

THERMAL SPECIFICATIONS

Thermal Resistance Junction to
Ambient

SWITCHING SPECIFICATIONS (VGS = 4.5V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
SWITCHING SPECIFICATIONS (VGS = 10V)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t

GATE CHARGE SPECIFICATIONS

Total Gate Charge Q
Gate Charge at 5V Q
Threshold Gate Charge Q
Gate to Source Gate Charge Q
Gate to Drain “Miller” Charge Q

CAPACITANCE SPECIFICATIONS

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

DSSID
DSS
GSS

GS(TH)VGS

DS(ON)ID

VDS = 30V, VGS = 0V - - 10 µA
VGS = ±20V - - ±10 µA

ID = 5.0A, VGS = 4.5V (Figure 8) - 0.011 0.016 Ω

R

θJA

Pad Area = 1.00 in2(645.2 mm2) (Note 2) - - 62.5oC/W
Pad Area = 0.035 in2 (22.4 mm2) (Figure 20) - - 165.4oC/W
Pad Area = 0.0045 in2 (2.88 mm2) (Figure 20) - - 206.8oC/W

d(ON)

VDD = 15V, ID = 5.0A
VGS= 4.5V,

r

RGS = 8.2Ω

d(OFF)

d(ON)

(Figures 14, 18, 19)

f

VDD = 15V, ID = 10.0A
VGS= 10V,

r

RGS = 9.1Ω

d(OFF)

g(TOT)VGS

g(5)

g(TH)

ISS

(Figures 15, 18, 19)

f

VGS = 0V to 5V - 18.6 - nC
VGS = 0V to 1V - 2 - nC

gs
gd

VDS = 25V, VGS = 0V,
f = 1MHz

OSS
RSS

(Figures 12)

= 250µA, VGS = 0V (Figure 11) 30 - - V

= VDS, ID = 250µA (Figure 10) 1.0 - 2.5 V

= 10.0A, VGS = 10V (Figures 8, 9) - 0.0086 0.012 Ω

- 21.5 - ns

-82-ns

-29-ns

-31-ns

-12-ns

-63-ns

-47-ns

-46-ns

= 0V to 10V VDD = 15V,

-34-nC
ID = 9.0A,
I

= 1.0mA

g(REF)

(Figures 13, 16, 17)

- 6.4 - nC

- 7.2 - nC

- 1770 - pF

- 390 - pF

- 163 - pF

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage V
Reverse Recovery Time t
Reverse Recovered Charge Q

2

SD

rr

RR

ISD = 9.0A - 0.81 - V
ISD = 9.0A, dISD/dt = 100A/µs - 27 - ns
ISD = 9.0A, dISD/dt = 100A/µs - 13.5 - nC

Typical Performance Curves

ITF86116SQT

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

125

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATIONvs AMBIENT

TEMPERATURE

3

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJA

Z

0.01

THERMAL IMPEDANCE

0.001

-5

10

-4

10

10

-3

SINGLE PULSE

-2

10

t, RECTANGULAR PULSE DURATION (s)

12

10

VGS= 10V, R

= 62.5oC/W

θJA

8

6

4

, DRAIN CURRENT (A)

D

I

2

VGS= 4.5V, R

= 206.8oC/W

θJA

0

25

50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

R

θJA

P

DM

t

1

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-1

10

0

10

1

10

θJA

1/t2

x R

10

θJA

2

= 62.5oC/W

t

2

+ T

A

3

10

1000

100

, PEAK CURRENT (A)

DM

I

TRANSCONDUCTANCE

10

MAY LIMIT CURRENT
IN THIS REGION

5

-5

10

VGS = 4.5V

-4

10

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

R

= 62.5oC/W

θJA

-3

10

-2

10

-1

10

0

10

10

t, PULSE WIDTH (s)

FIGURE 4. PEAK CURRENT CAPABILITY

3

TA = 25oC

FOR TEMPERATURES
ABOVE 25

o

C DERATE PEAK

CURRENT AS FOLLOWS:

I = I

1

150 - T

25

125

2

10

A

3

10

Typical Performance Curves (Continued)

ITF86116SQT

500

100

10

, DRAIN CURRENT (A)

OPERATION IN THIS

D

I

AREA MAY BE
LIMITED BY r

1

1

V

DS

DS(ON)

10 100

, DRAIN TO SOURCE VOLTAGE (V)

R

= 62.5oC/W

θJA

SINGLE PULSE
TJ = MAX RATED
T

= 25oC

A

100µs

1ms

10ms

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA

40

VGS = 10V

VGS = 5V

30

20

, DRAIN CURRENT (A)

10

D

I

TA = 25oC

0

0 0.2 0.4 0.6 1.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 4V

VGS = 4.5V

VGS = 3.5V

VGS = 3V

0.8

40

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

30

TJ = 150oC

20

TJ = 25oC

DRAIN CURRENT (A)

10

D,

I

0

2.0 2.5 3.0 3.5 4.0
VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

FIGURE 6. TRANSFER CHARACTERISTICS

25

20

ID = 1A

15

, DRAIN TO SOURCE

ON RESISTANCE (mΩ)

10

DS(ON)

r

5

246810

ID = 10A

, GATE TO SOURCE VOLTAGE (V)

V

GS

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

FIGURE 7. SATURATION CHARACTERISTICS FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

1.6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.4

1.2

1.0

ON RESISTANCE

0.8

NORMALIZED DRAIN TO SOURCE

0.6

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 10A

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

1.2

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

4