intersil ISL84780 DATA SHEET

®
ISL84780
Data Sheet
Ultra Low ON-Resistance, Low Voltage, Single Supply, Quad 2:1 Analog Multiplexer
The Intersil ISL84780 device is a low ON-resistance, low voltage, bidirectional, Quad SPDT (Dual DPDT) analog switch designed to operate from a single +1.6V to +3.6V supply. Targeted applications include battery-powered equipment that benefit from low on-resistance, and fast switching speeds (t input is 1.8V logic-compatible when using a single +3V supply.
Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins may be limited and digital geometries are not well suited to analog switch performance. This family of parts may be used to “mux-in” additional functionality while reducing ASIC design risk. The ISL84780 is offered in small form factor packages, alleviating board space limitations.
The ISL84780 is a committed Quad SPDT that consists of four normally open (NO) and four normally closed (NC) switches. This configuration can also be used as a diff dual 2­to-1 multiplexer/demultiplexer or a quad 2-to1 multiplexer/demultiplexer. The ISL84780 is pin compatible with the MAX4780.
TABLE 1. FEATURES AT A GLANCE
Number of Switches 4
SW Quad SPDT (Dual DPDT)
3.0V R
3.0V t
ON/tOFF
1.8V R
1.8V t
ON/tOFF
Packages 16Ld 3x3 TQFN, 16Ld TSSOP
ON
ON
ON
= 12ns, t
= 8ns). The digital logic
OFF
ISL84780
0.36
12ns/8ns
0.54
19ns/11ns
October 11, 2004 FN6099.0
Features
• Pin Compatible Replacement for the MAX4780
• ON Resistance (R
ON
)
- V+ = +3.0V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.36
- V+ = +1.8V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.54
•R
Matching between Channels. . . . . . . . . . . . . . . . . 0.13
ON
Flatness Across Signal Range . . . . . . . . . . . . . . . 0.05
•R
ON
• Single Supply Operation . . . . . . . . . . . . . . . . .+1.6V to +3.6V
• Low Power Consumption (PD) . . . . . . . . . . . . . . . . . <0.2µW
• Fast Switching Action
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12ns
-t
ON
-t
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8ns
OFF
• Guaranteed Break-Before-Make
• 1.8V Logic Compatible (+3V supply)
• Available in 16 lead 3x3 thin QFN and 16 lead TSSOP
• ESD HBM Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6kV
Applications
• Battery Powered, Handheld, and Portable Equipment
- Cellular/Mobile Phones
- Pagers
- Laptops, Notebooks, Palmtops
• Portable Test and Measurement
• Medical Equipment
• Audio and Video Switching
Related Literature
• Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)”
• Application Note AN557 “Recommended Test Procedures for Analog Switches”
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
All other trademarks mentioned are the property of their respective owners.
Copyright Intersil Americas Inc. 2004. All Rights Reserved
ISL84780
Pinouts (Note 1)
ISL84780 (TSSOP)
TOP VIEW
IN1-2
1
NC1
2
NO1
3
COM1
4
5
NC2
6
NO2
COM2
7
GND
8
ISL84780 (3X3 THIN QFN)
TOP VIEW
NC1
IN1-2
1516 14 13
1
NO1
2
COM1
NC2
3
NO2
4
6578
GND
COM2
NOTE:
1. Switches Shown for Logic “0” Input.
V+
COM3
16
15
14
13
12
11
10
9
IN3-4
NO3
V+
IN3-4
NC4
NO4
COM4
NC3
NO3
COM3
12
11
10
9
NC4
NO4
COM4
NC3
Ordering Information
PART NO.
(BRAND)
ISL84780IR (780I)
ISL84780IR-T (780I)
ISL84780IV (84780IV)
ISL84780IV-T (84780IV)
TEMP.
RANGE (°C) PACKAGE
-40 to 85 16 Ld 3x3 Thin QFN L16.3x3A
-40 to 85 16 Ld 3x3 Thin QFN Tape and Reel
-40 to 85 16 Ld TSSOP M16.173
-40 to 85 16 Ld TSSOP Tape and Reel
Truth Table
LOGIC NC SW NO SW
0ONOFF
1OFFON
NOTE: Logic “0” 0.5V. Logic “1” 1.4V with a 3V supply.
Pin Descriptions
PIN FUNCTION
V+ System Power Supply Input (+1.6V to +3.6V)
GND Ground Connection
IN Digital Control Input
COM Analog Switch Common Pin
NO Analog Switch Normally Open Pin
NC Analog Switch Normally Closed Pin
PKG.
DWG. #
L16.3x3A
M16.173
2
FN6099.0
ISL84780
Absolute Maximum Ratings Thermal Information
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to 4.7V
Input Voltages
NO, NC, IN (Note 2) . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
Output Voltages
COM (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to ((V+) + 0.3V)
Continuous Current NO, NC, or COM . . . . . . . . . . . . . . . . . ±300mA
Peak Current NO, NC, or COM
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . ±500mA
ESD Rating:
HBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>6kV
MM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>300V
CDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>1kV
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
2. Signals on NC , NO , IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings.
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3. θ
JA
Thermal Resistance (Typical, Note 3) θ
(°C/W)
JA
16 Ld 3x3 TQFN Package . . . . . . . . . . . . . . . . . . . . 75
16 Ld TSSOP Package . . . . . . . . . . . . . . . . . . . . . . 150
Maximum Junction Temperature (Plastic Package). . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C
(Lead Tips Only)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to 85°C
Electrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, V
Unless Otherwise Specified
PARAMETER TEST CONDITIONS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ON Resistance, R
R
Matching Between Channels,
ON
R
ON
Flatness, R
R
ON
NO or NC OFF Leakage Current, I
NO(OFF)
or I
NC(OFF)
COM ON Leakage Current, I
COM(ON)
ON
FLAT(ON)
ANALOG
V+ = 2.7V, I (See Figure 5)
V+ = 2.7V, I max R
V+ = 2.7V, I (Note 7)
, (Note 9)
ON
COM
COM
COM
V+ = 3.3V, V
V+ = 3.3V, V
COM
or Floating
= 100mA, VNO or VNC = 0V to V+,
= 100mA, VNO or V
= 100mA, VNO or VNC = 0V to V+
= 0.3V, 3V, VNO or VNC = 3V, 0.3V 25 -3 - 3 nA
COM
= 0.3V, 3V, or VNO or VNC = 0.3V, 3V,
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
ON
V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF, (See Figure 1, Note 8)
Turn-OFF Time, t
OFF
Break-Before-Make Time Delay, t
Charge Injection, Q C
OFF Isolation R
Crosstalk (Channel-to-Channel) R
V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF, (See Figure 1, Note 8)
V+ = 3.3V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF,
D
(See Figure 3, Note 8)
= 1.0nF, VG = 0V, RG = 0, (See Figure 2) 25 - -97 - pC
L
= 50, CL = 5pF, f = 100kHz, V
L
(See Figure 4)
= 50, CL = 5pF, f = 100kHz, V
L
(See Figure 6)
Total Harmonic Distortion f = 20Hz to 20kHz, V
NO or NC OFF Capacitance, C
COM ON Capacitance, C
COM(ON)
f = 1MHz, VNO or VNC = V
OFF
f = 1MHz, VNO or VNC = V
COM
TEMP
= Voltage at
NC
= 1V
COM
= 1V
COM
= 2V
, RL = 32 25 - 0.002 - %
P-P
= 0V, (See Figure 7) 25 - 62 - pF
COM
= 0V, (See Figure 7) 25 - 125 - pF
COM
RMS
RMS
,
,
(NOTE 5)
(°C)
Full 0 - V+ V
25 - 0.4 0.6
Full - - 0.7
25 - 0.13 0.2
Full - - 0.2
25 - 0.05 0.15
Full - - 0.15
Full -20 - 20 nA
25 -4 - 4 nA
Full -30 - 30 nA
25 - 12 20 ns
Full - - 25 ns
25 - 8 14 ns
Full - - 17 ns
Full 1 3 - ns
25 - 68 - dB
25 - -98 - dB
= 1.4V, V
INH
MIN TYP
= 0.5V (Notes 4, 6),
INL
(NOTE 5)
MAX UNITS
3
FN6099.0
ISL84780
Electrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, V
= 1.4V, V
INH
= 0.5V (Notes 4, 6),
INL
Unless Otherwise Specified (Continued)
TEMP
PARAMETER TEST CONDITIONS
(°C)
(NOTE 5)
MIN TYP
(NOTE 5)
MAX UNITS
POWER SUPPLY CHARACTERISTICS
Power Supply Range Full 1.6 - 3.6 V
Positive Supply Current, I+ V+ = 3.6V, V
= 0V or V+ 25 - - 0.05 µA
IN
Full - - 1.5 µA
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, V
Input Voltage High, V
Input Current, I
INH
, I
INL
INH
INL
V+ = 3.6V, VIN = 0V or V+ (Note 8) Full -0.5 - 0.5 µA
Full - - 0.5 V
Full 1.4 - - V
NOTES:
4. V
= input voltage to perform proper function.
IN
5. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
6. Parts are 100% tested at +25°C. Limits across the full temperature range are guaranteed by design and correlation.
7. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal range.
8. Guaranteed not tested.
matching between channels is calculated by subtracting the channel with the highest max Ron value from the channel with lowest max Ron
9. R
ON
value, between NC1 and NC2, NC3 and NC4 or between NO1 and NO2, NO3 and NO4.
Electrical Specifications - 1.8V Supply Test Conditions: V+ = +1.65V to +2V, GND = 0V, V
= 1.0V, V
INH
= 0.4V (Note 4, 6),
INL
Unless Otherwise Specified
PARAMETER TEST CONDITIONS
TEMP
(°C)
(NOTE 5)
MIN TYP
(NOTE 5)
MAX UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ON Resistance, R
ON
ANALOG
V+ = 1.8V, I See Figure 5
= 100mA, VNO or VNC = 0V to V+,
COM
Full 0 - V+ V
25 - 0.54 0.9
Full - - 1
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
Turn-OFF Time, t
ON
OFF
Break-Before-Make Time Delay, t
V+ = 1.65V, VNO or VNC = 1.0V, RL =50, CL = 35pF, See Figure 1, Note 8
V+ = 1.65V, VNO or VNC = 1.0V, RL =50, CL = 35pF, See Figure 1, Note 8
V+ = 2.0V, VNO or VNC = 1.0V, RL =50Ω, CL = 35pF,
D
25 - 19 25 ns
Full - - 30 ns
25 - 11 17 ns
Full - - 22 ns
Full 1 5 - ns
See Figure 3, Note 8
Charge Injection, Q C
OFF Isolation R
= 1.0nF, VG = 0V, RG = 0, See Figure 2 25 - -52 - pC
L
= 50, CL = 5pF, f = 100kHz, V
L
COM
= 1V
RMS
,
25 - 68 - dB
See Figure 4
Crosstalk (Channel-to-Channel) R
NO or NC OFF Capacitance, C
COM ON Capacitance, C
OFF
COM(ON)
= 50, CL = 5pF, f = 100kHz, V
L
See Figure 6
f = 1MHz, VNO or VNC = V
f = 1MHz, VNO or VNC = V
COM
COM
COM
= 1V
RMS
,
25 - -98 - dB
= 0V, See Figure 7 25 - 62 - pF
= 0V, See Figure 7 25 - 125 - pF
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, V
Input Voltage High, V
Input Current, I
INH
, I
INL
INH
INL
V+ = 2.0V, VIN = 0V or V+ (Note 8) Full -0.05 - 0.05 µA
Full - - 0.4 V
Full 1.0 - - V
4
FN6099.0
Test Circuits and Waveforms
V
INH
LOGIC
INPUT
SWITCH
INPUT
SWITCH
OUTPUT
V
INL
V
NO
0V
t
ON
50%
90%
t
OFF
V
OUT
Logic input waveform is inverted for switches that have the opposite logic sense.
tr < 5ns
< 5ns
t
f
90%
ISL84780
SWITCH
LOGIC
INPUT
INPUT
NO or NC
IN
Repeat test for all switches. C capacitance.
V
OUT
V
=
(NO or NC)
V+
C
COM
R
R 50
L
ON()
GND
includes fixture and stray
L
------------------------------
RLR
+
V
OUT
C
L
35pF
L
FIGURE 1A. MEASUREMENT POINTS
SWITCH
OUTPUT
V
OUT
LOGIC
INPUT
ON
Q = ∆V
OUT
V
x C
OUT
OFF
L
FIGURE 2A. MEASUREMENT POINTS
FIGURE 1. SWITCHING TIMES
V
ON
INH
V
INL
FIGURE 2. CHARGE INJECTION
FIGURE 1B. TEST CIRCUIT
V+
C
R
G
NO or NC
V
G
GND
COM
IN
LOGIC
INPUT
V
OUT
C
L
FIGURE 2B. TEST CIRCUIT
V+
C
LOGIC INPUT
SWITCH
OUTPUT
V
OUT
V
INH
V
INL
0V
t
D
FIGURE 3A. MEASUREMENT POINTS
5
V
NX
90%
LOGIC
INPUT
includes fixture and stray capacitance.
C
L
FIGURE 3. BREAK-BEFORE-MAKE TIME
NO
COM
NC
IN
GND
FIGURE 3B. TEST CIRCUIT
R
50
V
OUT
C
L
L
35pF
FN6099.0
Test Circuits and Waveforms (Continued)
ISL84780
SIGNAL GENERATOR
ANALYZER
FIGURE 4. OFF ISOLATION TEST CIRCUIT FIGURE 5. RON TEST CIRCUIT
SIGNAL GENERATOR
R
L
0V or V+
NO or NC
COM
NO or NC
IN
1
GND
V+
V+
COM
V+
C
RON = V1/1mA
NO or NC
V
NX
IN
C
0V or V+
50
IMPEDANCE
ANALYZER
1mA
V
1
COM
GND
NO or NC
C
V
or V
INL
IN
V+
IN
INH
C
V
or V
INL
INH
ANALYZER
COM
R
L
NC or NO
GND
N.C.
FIGURE 6. CROSSTALK TEST CIRCUIT FIGURE 7. CAPACITANCE TEST CIRCUIT
Detailed Description
The ISL84780 is a bidirectional, quad single pole/double throw (SPDT) analog switch that offers precise switching capability from a single 1.6V to 3.6V supply with low on­resistance (0.36) and high speed operation (t t
= 8ns). The device is especially well suited for portable
OFF
battery-powered equipment due to its low operating supply voltage (1.6V), low power consumption (5.4µW max), low leakage currents (30nA max), and the tiny TQFN and TSSOP packages. The ultra low on-resistance and Ron flatness provide very low insertion loss and distortion to applications that require signal reproduction.
Supply Sequencing and Overvoltage Protection
With any CMOS device, proper power supply sequencing is required to protect the device from excessive input currents which might permanently damage the IC. All I/O pins contain ESD protection diodes from the pin to V+ and to GND (see Figure 8). To prevent forward biasing these diodes, V+ must be applied before any input signals, and the input signal
ON
= 12ns,
COM
GND
voltages must remain between V+ and GND. If these conditions cannot be guaranteed, then one of the following two protection methods should be employed.
Logic inputs can easily be protected by adding a 1k resistor in series with the input (See Figure 8). The resistor limits the input current below the threshold that produces permanent damage, and the sub-microamp input current produces an insignificant voltage drop during normal operation.
This method is not acceptable for the signal path inputs. Adding a series resistor to the switch input defeats the purpose of using a low R
switch, so two small signal
ON
diodes can be added in series with the supply pins to provide overvoltage protection for all pins (See Figure 8). These additional diodes limit the analog signal from 1V below V+ to 1V above GND. The low leakage current performance is unaffected by this approach, but the switch signal range is reduced and the resistance may increase, especially at low supply voltages.
6
FN6099.0
OPTIONAL PROTECTION DIODE
OPTIONAL PROTECTION RESISTOR
IN
X
V
NO or NC
FIGURE 8. OVERVOLTAGE PROTECTION
V+
GND
OPTIONAL PROTECTION DIODE
V
COM
Power-Supply Considerations
The ISL84780 construction is typical of most single supply CMOS analog switches, in that they have two supply pins: V+ and GND. V+ and GND drive the internal CMOS switches and set their analog voltage limits. Unlike switches with a 4V maximum supply voltage, the ISL84780 4.7V maximum supply voltage provides plenty of room for the 10% tolerance of 3.6V supplies, as well as room for overshoot and noise spikes.
The minimum recommended supply voltage is 1.6V but the part will operate with a supply below 1.5V. It is important to note that the input signal range, switching times, and on­resistance degrade at lower supply voltages. Refer to the electrical specification tables and Typical Performance curves for details.
V+ and GND also power the internal logic and level shifters. The level shifters convert the input logic levels to switched V+ and GND signals to drive the analog switch gate terminals.
This family of switches cannot be operated with bipolar supplies, because the input switching point becomes negative in this configuration.
ISL84780
High-Frequency Performance
In 50 systems, the signal response is reasonably flat even past 30MHz with a -3dB bandwidth of 104MHz (See Figure 15). The frequency response is very consistent over a wide V+ range, and for varying analog signal levels.
An OFF switch acts like a capacitor and passes higher frequencies with less attenuation, resulting in signal feedthrough from the switch input to its output. Off Isolation is the resistance to this feedthrough, while Crosstalk indicates the amount of feedthrough from one switch to another. Figure 16 details the high Off Isolation and Crosstalk rejection provided by this part. At 100kHz, Off Isolation is about 68dB in 50Ω systems, decreasing approximately 20dB per decade as frequency increases. Higher load impedances decrease Off Isolation and Crosstalk rejection due to the voltage divider action of the switch OFF impedance and the load impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected between each analog-signal pin and both V+ and GND. One of these diodes conducts if any analog signal exceeds V+ or GND.
Virtually all the analog leakage current comes from the ESD diodes to V+ or GND. Although the ESD diodes on a given signal pin are identical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or GND and the analog signal. This means their leakages will vary as the signal varies. The difference in the two diode leakages to the V+ and GND pins constitutes the analog­signal-path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite polarity. There is no connection between the analog signal paths and V+ or GND.
Logic-Level Thresholds
This switch family is 1.8V CMOS compatible (0.5V and 1.4V) over a supply range of 2.0V to 3.6V (See Figure 17). At 3.6V the V
level is about 1.27V. This is still below the 1.8V
IH
CMOS guaranteed high output minimum level of 1.4V, but noise margin is reduced.
The digital input stages draw supply current whenever the digital input voltage is not at one of the supply rails. Driving the digital input signals from GND to V+ with a fast transition time minimizes power dissipation.
7
FN6099.0
ISL84780
Typical Performance Curves T
0.55
0.5
V+ = 1.8V
0.45
(Ω)
ON
R
0.4
0.35
0.3 01234
V+ = 2.7V
V+ = 3V
V
COM
(V)
= 25°C, Unless Otherwise Specified
A
I
= 100mA
COM
V+ = 3.6V
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
(Ω) R
ON
0.6
85°C
0.55
25°C
0.5
-40°C
0.45
0.4
V+ = 1.8V
I
COM
= 100mA
0.4
85°C
0.35
(Ω)
ON
R
0.3
0.25
00.511.522.53
25°C
-40°C
V
COM
(V)
I
COM
V+ = 3V = 100mA
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE
100
50
0
Q (pC)
-50
V+ = 1.8V
V+ = 3V
0.35
0.3
0 0.5 1 1.5 2
V
(V)
COM
-100
-150
00.511.522.53
V
(V)
COM
FIGURE 11. ON RESISTANCE vs SWITCH VOLTAGE FIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE
50
40
30
(ns)
ON
t
20
10
0
11.522.533.544.5
85°C
-40°C
25°C
V+ (V)
20
15
(ns)
10
OFF
t
5
0
1
85°C
-40°C
1.522.533.544.5
25°C
V+ (V)
FIGURE 13. TURN-ON TIME vs SUPPLY VOLTAGE FIGURE 14. TURN-OFF TIME vs SUPPLY VOLTAGE
8
FN6099.0
ISL84780
Typical Performance Curves T
V+ = 3V
0
GAIN
-20
PHASE
NORMALIZED GAIN (dB)
RL = 50 VIN = 0.2V
1 10 100 600
P-P
to 2V
P-P
FREQUENCY (MHz)
= 25°C, Unless Otherwise Specified (Continued)
A
0 20
40 60 80
100
FIGURE 15. FREQUENCY RESPONSE FIGURE 16. CROSSTALK AND OFF ISOLATION
1.5
1.4
1.3
1.2
1.1
(V)
1
INL
0.9
0.8
AND V
0.7
INH
V
0.6
0.5
0.4
0.3
11.522.533.544.5
V
INH
V
INL
V+ (V)
FIGURE 17. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
PHASE (DEGREES)
-10 V+ = 3V
-20
-30
-40
-50
-60
-70
CROSSTALK (dB)
-80
-90
-100
-110 1k 100k 1M 100M 500M10k 10M
ISOLATION
CROSSTALK
FREQUENCY (Hz)
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND (QFN Paddle Connection: To Ground or Float)
TRANSISTOR COUNT:
228
PROCESS:
Si Gate CMOS
10 20
30
40
50
60
70
80
90
100 110
OFF ISOLATION (dB)
9
FN6099.0
ISL84780
Thin Shrink Small Outline Plastic Packages (TSSOP)
N
INDEX AREA
123
-A-
0.05(0.002)
D
SEATING PLANE
e
b
0.10(0.004) C AM BS
M
E1
-B-
A
-C-
0.25(0.010) BM M
E
α
A1
0.10(0.004)
GAUGE
PLANE
0.25
0.010
A2
NOTES:
1. These package dimensions are within allowable dimensions of JEDEC MO-153-AB, Issue E.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.15mm (0.006 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm (0.003 inch) total in excess of “b” dimension at maximum material condition. Minimum space between protrusion and adjacent lead is 0.07mm (0.0027 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimen­sions are not necessarily exact. (Angles in degrees)
M16.173
16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE
INCHES MILLIMETERS
SYMBOL
A - 0.043 - 1.10 -
A1 0.002 0.006 0.05 0.15 -
L
A2 0.033 0.037 0.85 0.95 -
b 0.0075 0.012 0.19 0.30 9 c 0.0035 0.008 0.09 0.20 -
D 0.193 0.201 4.90 5.10 3
E1 0.169 0.177 4.30 4.50 4
e 0.026 BSC 0.65 BSC -
c
E 0.246 0.256 6.25 6.50 ­L 0.020 0.028 0.50 0.70 6
N16 167
o
α
0
o
8
o
0
o
8
NOTESMIN MAX MIN MAX
-
Rev. 1 2/02
10
FN6099.0
ISL84780
Thin Quad Flat No-Lead Plastic Package (TQFN) Thin Micro Lead Frame Plastic Package (TMLFP)
)
A
6
INDEX
AREA
AREA
2X
2X
SEATING PLANE
(DATUM B)
(DATUM A)
INDEX AREA
FOR ODD TERMINAL/SIDE FOR EVEN TERMINAL/SIDE
0.15
6
4X
CC
C
C
4X P
4X P
NX L
e
1 2 3
B
AC0.15
0
8
C
L
D
9
D1
N
TOP VIEW
SIDE VIEW
NX b
D2
D2
N
e
(Nd-1)Xe
REF.
BOTTOM VIEW
NX b
5
L1
TERMINAL TIP
2X
D/2
D1/2
A3
5
0.10 BAMC
7
NX k
2
N
1
2 3
E2/2
SECTION "C-C"
L
10
0.15
C
A
E1/2
E1
A2
A
A1
8
E2
7
8
9 CORNER OPTION 4X
A1
E/2
9
B
/ /
0.10 C
0.08
9
(Ne-1)Xe
REF.
C
L
E
e
0.152XB
C
L1
C
L
10
L16.3x3A
16 LEAD THIN QUAD FLAT NO-LEAD PLASTIC PACKAGE
MILLIMETERS
SYMBOL
A 0.70 0.75 0.80 -
A1 - - 0.05 -
A2 - - 0.80 9
A3 0.20 REF 9
b 0.18 0.23 0.30 5, 8
D 3.00 BSC -
D1 2.75 BSC 9
D2 1.35 1.50 1.65 7, 8, 10
E 3.00 BSC -
E1 2.75 BSC 9
E2 1.35 1.50 1.65 7, 8, 10
e 0.50 BSC -
k0.20 - - -
L 0.30 0.40 0.50 8
N162
Nd 4 3
Ne 4 3
P- -0.609
θ --129
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P & θ are present when Anvil singulation method is used and not present for saw singulation.
10. Compliant to JEDEC MO-220WEED-2 Issue C, except for the E2 and D2 MAX dimension.
NOTESMIN NOMINAL MAX
Rev. 0 6/04
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Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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11
FN6099.0
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