Ultra Low ON-Resistance, Low Voltage,
Single Supply, Quad 2:1 Analog
Multiplexer
The Intersil ISL84780 device is a low ON-resistance, low
voltage, bidirectional, Quad SPDT (Dual DPDT) analog
switch designed to operate from a single +1.6V to +3.6V
supply. Targeted applications include battery-powered
equipment that benefit from low on-resistance, and fast
switching speeds (t
input is 1.8V logic-compatible when using a single +3V supply.
Cell phones, for example, often face ASIC functionality
limitations. The number of analog input or GPIO pins may be
limited and digital geometries are not well suited to analog
switch performance. This family of parts may be used to
“mux-in” additional functionality while reducing ASIC design
risk. The ISL84780 is offered in small form factor packages,
alleviating board space limitations.
The ISL84780 is a committed Quad SPDT that consists of
four normally open (NO) and four normally closed (NC)
switches. This configuration can also be used as a diff dual 2to-1 multiplexer/demultiplexer or a quad 2-to1
multiplexer/demultiplexer. The ISL84780 is pin compatible
with the MAX4780.
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
2. Signals on NC , NO , IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings.
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications - 3V SupplyTest Conditions: V+ = +2.7V to +3.3V, GND = 0V, V
= 1.4V, V
INH
= 0.5V (Notes 4, 6),
INL
Unless Otherwise Specified (Continued)
TEMP
PARAMETERTEST CONDITIONS
(°C)
(NOTE 5)
MINTYP
(NOTE 5)
MAXUNITS
POWER SUPPLY CHARACTERISTICS
Power Supply RangeFull1.6-3.6V
Positive Supply Current, I+V+ = 3.6V, V
= 0V or V+25--0.05µA
IN
Full--1.5µA
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, V
Input Voltage High, V
Input Current, I
INH
, I
INL
INH
INL
V+ = 3.6V, VIN = 0V or V+ (Note 8)Full-0.5-0.5µA
Full--0.5V
Full1.4--V
NOTES:
4. V
= input voltage to perform proper function.
IN
5. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
6. Parts are 100% tested at +25°C. Limits across the full temperature range are guaranteed by design and correlation.
7. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal range.
8. Guaranteed not tested.
matching between channels is calculated by subtracting the channel with the highest max Ron value from the channel with lowest max Ron
9. R
ON
value, between NC1 and NC2, NC3 and NC4 or between NO1 and NO2, NO3 and NO4.
Electrical Specifications - 1.8V SupplyTest Conditions: V+ = +1.65V to +2V, GND = 0V, V
= 1.0V, V
INH
= 0.4V (Note 4, 6),
INL
Unless Otherwise Specified
PARAMETERTEST CONDITIONS
TEMP
(°C)
(NOTE 5)
MINTYP
(NOTE 5)
MAXUNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ON Resistance, R
ON
ANALOG
V+ = 1.8V, I
See Figure 5
= 100mA, VNO or VNC = 0V to V+,
COM
Full0-V+V
25-0.540.9Ω
Full--1Ω
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
Turn-OFF Time, t
ON
OFF
Break-Before-Make Time Delay, t
V+ = 1.65V, VNO or VNC = 1.0V, RL =50Ω, CL = 35pF,
See Figure 1, Note 8
V+ = 1.65V, VNO or VNC = 1.0V, RL =50Ω, CL = 35pF,
See Figure 1, Note 8
V+ = 2.0V, VNO or VNC = 1.0V, RL =50Ω, CL = 35pF,
D
25-1925ns
Full--30ns
25-1117ns
Full--22ns
Full15-ns
See Figure 3, Note 8
Charge Injection, QC
OFF IsolationR
= 1.0nF, VG = 0V, RG = 0Ω, See Figure 225--52-pC
L
= 50Ω, CL = 5pF, f = 100kHz, V
L
COM
= 1V
RMS
,
25-68-dB
See Figure 4
Crosstalk (Channel-to-Channel)R
NO or NC OFF Capacitance, C
COM ON Capacitance, C
OFF
COM(ON)
= 50Ω, CL = 5pF, f = 100kHz, V
L
See Figure 6
f = 1MHz, VNO or VNC = V
f = 1MHz, VNO or VNC = V
COM
COM
COM
= 1V
RMS
,
25--98-dB
= 0V, See Figure 725-62-pF
= 0V, See Figure 725-125-pF
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, V
Input Voltage High, V
Input Current, I
INH
, I
INL
INH
INL
V+ = 2.0V, VIN = 0V or V+ (Note 8)Full-0.05-0.05µA
Full--0.4V
Full1.0--V
4
FN6099.0
Test Circuits and Waveforms
V
INH
LOGIC
INPUT
SWITCH
INPUT
SWITCH
OUTPUT
V
INL
V
NO
0V
t
ON
50%
90%
t
OFF
V
OUT
Logic input waveform is inverted for switches that have the opposite
logic sense.
tr < 5ns
< 5ns
t
f
90%
ISL84780
SWITCH
LOGIC
INPUT
INPUT
NO or NC
IN
Repeat test for all switches. C
capacitance.
V
OUT
V
=
(NO or NC)
V+
C
COM
R
R
50Ω
L
ON()
GND
includes fixture and stray
L
------------------------------
RLR
+
V
OUT
C
L
35pF
L
FIGURE 1A. MEASUREMENT POINTS
SWITCH
OUTPUT
V
OUT
LOGIC
INPUT
ON
Q = ∆V
OUT
∆V
x C
OUT
OFF
L
FIGURE 2A. MEASUREMENT POINTS
FIGURE 1. SWITCHING TIMES
V
ON
INH
V
INL
FIGURE 2. CHARGE INJECTION
FIGURE 1B. TEST CIRCUIT
V+
C
R
G
NO or NC
V
G
GND
COM
IN
LOGIC
INPUT
V
OUT
C
L
FIGURE 2B. TEST CIRCUIT
V+
C
LOGIC
INPUT
SWITCH
OUTPUT
V
OUT
V
INH
V
INL
0V
t
D
FIGURE 3A. MEASUREMENT POINTS
5
V
NX
90%
LOGIC
INPUT
includes fixture and stray capacitance.
C
L
FIGURE 3. BREAK-BEFORE-MAKE TIME
NO
COM
NC
IN
GND
FIGURE 3B. TEST CIRCUIT
R
50Ω
V
OUT
C
L
L
35pF
FN6099.0
Test Circuits and Waveforms (Continued)
ISL84780
SIGNAL
GENERATOR
ANALYZER
FIGURE 4. OFF ISOLATION TEST CIRCUITFIGURE 5. RON TEST CIRCUIT
SIGNAL
GENERATOR
R
L
0V or V+
NO or NC
COM
NO or NC
IN
1
GND
V+
V+
COM
V+
C
RON = V1/1mA
NO or NC
V
NX
IN
C
0V or V+
50Ω
IMPEDANCE
ANALYZER
1mA
V
1
COM
GND
NO or NC
C
V
or V
INL
IN
V+
IN
INH
C
V
or V
INL
INH
ANALYZER
COM
R
L
NC or NO
GND
N.C.
FIGURE 6. CROSSTALK TEST CIRCUITFIGURE 7. CAPACITANCE TEST CIRCUIT
Detailed Description
The ISL84780 is a bidirectional, quad single pole/double
throw (SPDT) analog switch that offers precise switching
capability from a single 1.6V to 3.6V supply with low onresistance (0.36Ω) and high speed operation (t
t
= 8ns). The device is especially well suited for portable
OFF
battery-powered equipment due to its low operating supply
voltage (1.6V), low power consumption (5.4µW max), low
leakage currents (30nA max), and the tiny TQFN and TSSOP
packages. The ultra low on-resistance and Ron flatness
provide very low insertion loss and distortion to applications
that require signal reproduction.
Supply Sequencing and Overvoltage Protection
With any CMOS device, proper power supply sequencing is
required to protect the device from excessive input currents
which might permanently damage the IC. All I/O pins contain
ESD protection diodes from the pin to V+ and to GND (see
Figure 8). To prevent forward biasing these diodes, V+ must
be applied before any input signals, and the input signal
ON
= 12ns,
COM
GND
voltages must remain between V+ and GND. If these
conditions cannot be guaranteed, then one of the following
two protection methods should be employed.
Logic inputs can easily be protected by adding a 1kΩ resistor
in series with the input (See Figure 8). The resistor limits the
input current below the threshold that produces permanent
damage, and the sub-microamp input current produces an
insignificant voltage drop during normal operation.
This method is not acceptable for the signal path inputs.
Adding a series resistor to the switch input defeats the
purpose of using a low R
switch, so two small signal
ON
diodes can be added in series with the supply pins to provide
overvoltage protection for all pins (See Figure 8). These
additional diodes limit the analog signal from 1V below V+ to
1V above GND. The low leakage current performance is
unaffected by this approach, but the switch signal range is
reduced and the resistance may increase, especially at low
supply voltages.
6
FN6099.0
OPTIONAL PROTECTION
DIODE
OPTIONAL
PROTECTION
RESISTOR
IN
X
V
NO or NC
FIGURE 8. OVERVOLTAGE PROTECTION
V+
GND
OPTIONAL PROTECTION
DIODE
V
COM
Power-Supply Considerations
The ISL84780 construction is typical of most single supply
CMOS analog switches, in that they have two supply pins:
V+ and GND. V+ and GND drive the internal CMOS
switches and set their analog voltage limits. Unlike switches
with a 4V maximum supply voltage, the ISL84780 4.7V
maximum supply voltage provides plenty of room for the
10% tolerance of 3.6V supplies, as well as room for
overshoot and noise spikes.
The minimum recommended supply voltage is 1.6V but the
part will operate with a supply below 1.5V. It is important to
note that the input signal range, switching times, and onresistance degrade at lower supply voltages. Refer to the
electrical specification tables and Typical Performance
curves for details.
V+ and GND also power the internal logic and level shifters.
The level shifters convert the input logic levels to switched
V+ and GND signals to drive the analog switch gate
terminals.
This family of switches cannot be operated with bipolar
supplies, because the input switching point becomes
negative in this configuration.
ISL84780
High-Frequency Performance
In 50Ω systems, the signal response is reasonably flat even
past 30MHz with a -3dB bandwidth of 104MHz (See
Figure 15). The frequency response is very consistent over a
wide V+ range, and for varying analog signal levels.
An OFF switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from the switch input to its output. Off Isolation
is the resistance to this feedthrough, while Crosstalk
indicates the amount of feedthrough from one switch to
another. Figure 16 details the high Off Isolation and
Crosstalk rejection provided by this part. At 100kHz, Off
Isolation is about 68dB in 50Ω systems, decreasing
approximately 20dB per decade as frequency increases.
Higher load impedances decrease Off Isolation and
Crosstalk rejection due to the voltage divider action of the
switch OFF impedance and the load impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND. One
of these diodes conducts if any analog signal exceeds V+
or GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analogsignal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and V+ or GND.
Logic-Level Thresholds
This switch family is 1.8V CMOS compatible (0.5V and 1.4V)
over a supply range of 2.0V to 3.6V (See Figure 17). At 3.6V
the V
level is about 1.27V. This is still below the 1.8V
IH
CMOS guaranteed high output minimum level of 1.4V, but
noise margin is reduced.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
7
FN6099.0
ISL84780
Typical Performance Curves T
0.55
0.5
V+ = 1.8V
0.45
(Ω)
ON
R
0.4
0.35
0.3
01234
V+ = 2.7V
V+ = 3V
V
COM
(V)
= 25°C, Unless Otherwise Specified
A
I
= 100mA
COM
V+ = 3.6V
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
(Ω)
R
ON
0.6
85°C
0.55
25°C
0.5
-40°C
0.45
0.4
V+ = 1.8V
I
COM
= 100mA
0.4
85°C
0.35
(Ω)
ON
R
0.3
0.25
00.511.522.53
25°C
-40°C
V
COM
(V)
I
COM
V+ = 3V
= 100mA
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE
100
50
0
Q (pC)
-50
V+ = 1.8V
V+ = 3V
0.35
0.3
00.511.52
V
(V)
COM
-100
-150
00.511.522.53
V
(V)
COM
FIGURE 11. ON RESISTANCE vs SWITCH VOLTAGEFIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE
50
40
30
(ns)
ON
t
20
10
0
11.522.533.544.5
85°C
-40°C
25°C
V+ (V)
20
15
(ns)
10
OFF
t
5
0
1
85°C
-40°C
1.522.533.544.5
25°C
V+ (V)
FIGURE 13. TURN-ON TIME vs SUPPLY VOLTAGEFIGURE 14. TURN-OFF TIME vs SUPPLY VOLTAGE
8
FN6099.0
ISL84780
Typical Performance Curves T
V+ = 3V
0
GAIN
-20
PHASE
NORMALIZED GAIN (dB)
RL = 50Ω
VIN = 0.2V
110100600
P-P
to 2V
P-P
FREQUENCY (MHz)
= 25°C, Unless Otherwise Specified (Continued)
A
0
20
40
60
80
100
FIGURE 15. FREQUENCY RESPONSEFIGURE 16. CROSSTALK AND OFF ISOLATION
1.5
1.4
1.3
1.2
1.1
(V)
1
INL
0.9
0.8
AND V
0.7
INH
V
0.6
0.5
0.4
0.3
11.522.533.544.5
V
INH
V
INL
V+ (V)
FIGURE 17. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
PHASE (DEGREES)
-10
V+ = 3V
-20
-30
-40
-50
-60
-70
CROSSTALK (dB)
-80
-90
-100
-110
1k100k1M100M 500M10k10M
ISOLATION
CROSSTALK
FREQUENCY (Hz)
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND (QFN Paddle Connection: To Ground or Float)
TRANSISTOR COUNT:
228
PROCESS:
Si Gate CMOS
10
20
30
40
50
60
70
80
90
100
110
OFF ISOLATION (dB)
9
FN6099.0
ISL84780
Thin Shrink Small Outline Plastic Packages (TSSOP)
N
INDEX
AREA
123
-A-
0.05(0.002)
D
SEATING PLANE
e
b
0.10(0.004)C AMBS
M
E1
-B-
A
-C-
0.25(0.010)BMM
E
α
A1
0.10(0.004)
GAUGE
PLANE
0.25
0.010
A2
NOTES:
1. These package dimensions are within allowable dimensions of
JEDEC MO-153-AB, Issue E.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.15mm (0.006
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. (Angles in degrees)
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land
Pattern Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P & θ are present when
Anvil singulation method is used and not present for saw
singulation.
10. Compliant to JEDEC MO-220WEED-2 Issue C, except for the E2
and D2 MAX dimension.
NOTESMINNOMINALMAX
Rev. 0 6/04
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
FN6099.0
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