Low-Voltage, Single Supply, Dual SPST,
SPDT Analog Switches
The Intersil ISL84541–ISL84544 devices are precision, dual
analog switches designed to operate from a single +2.7V to
+12V supply. Targeted applications include battery powered
equipment that benefit from the devices’ low power
consumption (5µW), low leakage currents (100pA max), and
fast switching speeds (t
= 35ns, t
ON
= 25ns). Cell phones,
OFF
for example, often face ASIC functionality limitations. The
number of analog input or GPIO pins may be limited and
digital geometries are not well suited to analog switch
performance. This family of parts may be used to “mux-in”
additional functionality while reducing ASIC design risk. Some
of the smallest packages are available alleviating board space
limitations, and making Intersil’s newest line of low-voltage
switches an ideal solution.
The ISL84541/ISL84542/ISL84543 are dual singlepole/single-throw (SPST) devices. The ISL84541 has two
normally open (NO) switches; the ISL84542 has two normal ly
closed (NC) switches; the ISL84543 has one NO and one NC
switch and can be used as an SPDT. The ISL84544 is a
committed SPDT, which is perfect for use in 2-to-1 multiplexer
applications.
Table 1 summarizes the performance of this family. For higher
performance, pin compatible versions, see the ISL43120 - 22
and ISL43210 datasheet.
TABLE 1. FEATURES AT A GLANCE
ISL84541ISL84542 ISL84543ISL84544
NUMBER OF
SWITCHES
SW 1 / SW 2NO / NONC / NC NO / NCSPDT
3.3V R
ON
3.3V tON / t
5V t
PACKAGES
5V R
ON
/ t
OFF
ON
OFF
2221
50Ω50Ω50Ω50Ω
50 / 20ns50 / 20ns 50 / 20ns50 / 20ns
30Ω30Ω30Ω30Ω
35 / 25ns35 / 25ns 35 / 25ns35 / 25ns
8 Ld PDIP,
8 Ld SOIC,
8 Ld SOT-23,
8 Ld MSOP
8 Ld PDIP,
8 Ld SOIC,
8 Ld SOT-23
8 Ld PDIP,
8 Ld SOIC,
6 Ld SOT-23
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied .
o
C to 70oC
o
C to 85oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300
(SOIC, MSOP and SOT-23 - Lead Tips Only)
NOTES:
3. Signals on NC, NO, COM, or IN exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings.
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. θ
JA
(oC/W)
JA
o
C to 150oC
o
o
C
C
Electrical Specifications - 5V SupplyTest Conditions: V+ = +4.5V to +5.5V, GND = 0V, V
Unless Otherwise Specified
TEMP
PARAMETERTEST CONDITIONS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ON Resistance, R
ON
ANALOG
V+ = 4.5V, I
See Figure 5
Matching Between Channels,
R
ON
∆R
ON
R
Flatness, R
ON
FLAT(ON)
NO or NC OFF Leakage Current,
NO(OFF)
or I
NC(OFF)
I
V+ = 5V, I
V+ = 5V, I
V+ = 5.5V, V
Note 7
= 1.0mA, VNO or VNC = 3.5V,
COM
= 1.0mA, VNO or VNC= 3.5V25-0.82Ω
COM
= 1.0mA, VNO or VNC = 1V, 2V, 3VFull-78Ω
COM
= 1V, 4.5V, VNO or VNC = 4.5V, 1V,
COM
o
(
C)
Full0-V+V
25-3060Ω
Full--75Ω
Full--4Ω
25-0.10.010.1nA
Full-5-5nA
= 2.4V, V
INH
INL
MIN
(NOTE 6)TYP
= 0.8V (Note 5),
MAX
(NOTE 6) UNITS
COM OFF Leakage Current,
I
COM(OFF)
COM ON Leakage Current,
I
COM(ON)
V+ = 5.5V, V
Note 7
V+ = 5.5V, V
COM
COM
4.5V, or Floating, Note 7
4
= 4.5V, 1V, VNO or VNC = 1V, 4.5V,
= 1V, 4.5V, or VNO or VNC = 1V,
25-0.1-0.1nA
Full-5-5nA
25-0.2-0.2nA
Full-10-10nA
ISL84541, ISL84542, ISL84543, ISL84544
Electrical Specifications - 5V SupplyTest Conditions: V+ = +4.5V to +5.5V, GND = 0V, V
Unless Otherwise Specified (Continued)
TEMP
PARAMETERTEST CONDITIONS
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
Turn-OFF Time, t
ON
OFF
Break-Before-Make Time Delay
(ISL84543, ISL84544), t
D
Charge Injection, QC
OFF IsolationR
Crosstalk (Channel-to-Channel)R
VNO or VNC = 3V, RL =1kΩ, CL = 35pF, VIN = 0 to 3V,
See Figure 1
VNO or VNC = 3V, RL =1kΩ, CL = 35pF, VIN = 0 to 3V,
See Figure 1
RL = 300Ω, CL = 35pF, VNO = VNC = 3V, VIN = 0 to 3V,
See Figure 3
= 1.0nF, VG = 0V, RG = 0Ω, See Figure 225-15pC
L
= 50Ω, CL = 5pF, f = 1MHz, See Figure 425-76-dB
L
= 50Ω, CL = 5pF, f = 1MHz, See Figure 625--90-dB
L
o
(
C)
25-35100ns
Full--240ns
25-2575ns
Full--150ns
Full210-ns
= 2.4V, V
INH
INL
MIN
(NOTE 6)TYP
= 0.8V (Note 5),
MAX
(NOTE 6) UNITS
NO or NC OFF Capacitance, C
COM OFF Capacitance,
C
COM(OFF)
COM ON Capacitance, C
COM(ON)
f = 1MHz, VNO or VNC = V
OFF
f = 1MHz, VNO or VNC = V
f = 1MHz, VNO or VNC = V
ISL84541/2/3
f = 1MHz, V
ISL84544
NO
or VNC = V
= 0V, See Figure 725-8-pF
COM
= 0V, See Figure 725-8-pF
COM
= 0V, See Figure 7,
COM
= 0V, See Figure 7,
COM
25-13-pF
25-20-pF
POWER SUPPLY CHARACTERISTICS
Power Supply RangeFull2.712V
Positive Supply Current, I+V+ = 5.5V, V
= 0V or V+, all channels on or offFull-10.00011µA
IN
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, V
Input Voltage High, V
INL
INH
Full--0.8V
Full2.4--V
NOTES:
5. V
= input voltage to perform proper function.
IN
6. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
o
7. Leakage parameter is 100% tested at high temp, and guaranteed by correlation at 25
C.
5
ISL84541, ISL84542, ISL84543, ISL84544
Electrical Specifications - 3.3V SupplyTest Conditions: V+ = +3.0V to +3.6V, GND = 0V, V
Unless Otherwise Specified
TEMP
PARAMETERTEST CONDITIONS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, V
ON Resistance, R
R
Matching Between Channels,
ON
∆R
ON
R
Flatness, R
ON
NO or NC OFF Leakage Current,
I
NO(OFF)
or I
NC(OFF)
COM OFF Leakage Current,
I
COM(OFF)
COM ON Leakage Current,
I
COM(ON)
ON
FLAT(ON)
ANALOG
V+ = 3V, I
V+ = 3.3V, I
V+ = 3.3V, I
1V, 1.5V
V+ = 3.6V, V
Note 7
V+ = 3.6V, V
Note 7
V+ = 3.6V, V
or floating, Note 7
= 1.0mA, VNO or VNC = 1.5V25-5080Ω
COM
= 1.0mA, VNO or VNC = 1.5V25-0.82Ω
COM
= 1.0mA, VNO or VNC = 0.5V,
COM
= 1V, 3V, VNO or VNC = 3V, 1V,
COM
= 3V, 1V, VNO or VNC = 1V, 3V,
COM
= 1V, 3V, or VNO or VNC = 1V, 3V,
COM
o
(
C)
(NOTE 6)TYP
Full0-V+V
Full--140Ω
Full--4Ω
25-610Ω
Full-712Ω
25-0.10.010.1nA
Full-5-5nA
25-0.10.010.1nA
Full-5-5nA
25-0.2-0.2nA
Full-10-10nA
INH
MIN
= 2.4V, V
= 0.8V (Note 5),
INL
MAX
(NOTE 6)UNITS
DYNAMIC CHARACTERISTICS
Turn-ON Time, t
ON
VNO or VNC = 1.5V, RL =1kΩ, CL = 35pF, VIN = 0 to 3V25-50120ns
Full200ns
Turn-OFF Time, t
OFF
VNO or VNC = 1.5V, RL =1kΩ, CL = 35pF, VIN = 0 to 3V25-2050ns
Full--120ns
Break-Before-Make Time Delay
(ISL84543, ISL84544), t
D
Charge Injection, QC
OFF IsolationR
RL = 300Ω, CL = 35pF, VNO or VNC = 1.5V,
V
= 0 to 3V
IN
= 1.0nF, VG = 0V, RG = 0Ω25-15pC
L
= 50Ω, CL = 5pF, f = 1MHz25-76-dB
L
Full330-ns
Crosstalk (Channel-to-Channel)25--90-dB
NO or NC OFF Capacitance, C
COM OFF Capacitance,
C
COM(OFF)
COM ON Capacitance, C
COM(ON)
f = 1MHz, VNO or VNC = V
OFF
f = 1MHz, VNO or VNC = V
f = 1MHz, VNO or VNC = V
f = 1MHz, V
NO
or VNC = V
= 0V25-8-pF
COM
= 0V25-8-pF
COM
= 0V, ISL84541/2/325-13-pF
COM
= 0V, ISL8454425-20-pF
COM
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+V+ = 3.6V, V
= 0V or V+, all channels on or offFull-1-1µA
IN
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, V
Input Voltage High, V
Input Current, I
INH
, I
INL
INH
INL
Full--0.8V
Full2.4--V
V+ = 3.6V, VIN = 0V or V+Full-1-1µA
6
ISL84541, ISL84542, ISL84543, ISL84544
Test Circuits and Waveforms
3V
LOGIC
INPUT
SWITCH
INPUT
SWITCH
OUTPUT
0V
V
NO
0V
t
ON
50%
90%
t
OFF
V
OUT
tr < 20ns
< 20ns
t
f
90%
SWITCH
LOGIC
INPUT
INPUT
NO or NC
IN
V+
GND
C
COM
RL
1kΩ
V
OUT
C
L
35pF
Logic input waveform is inverted for switches that have the opposite
logic sense.
FIGURE 1A. MEASUREMENT POINTS
FIGURE 1. SWITCHING TIMES
SWITCH
OUTPUT
V
OUT
LOGIC
INPUT
ON
Q = ∆V
OUT
∆V
x C
OUT
L
OFF
ON
V+
0V
FIGURE 2A. MEASUREMENT POINTSFIGURE 2B. TEST CIRCUIT
FIGURE 2. CHARGE INJECTION
OUT1
OUT2
3V
0V
0V
0V
90%
90%
t
D
t
D
LOGIC
INPUT
SWITCH
OUTPUT
V
SWITCH
OUTPUT
V
Repeat test for all switches. C
capacitance.
V
OUT
V
=
(NO or NC)
FIGURE 1B. TEST CIRCUIT
V+
R
G
NO or NC
V
G
V
NX
LOGIC
INPUT
NO1
NC2
IN
IN
GND
V+
1
2
GND
includes fixture and stray
L
R
L
------------------------------
RLR
+
ON()
C
COM
IN
LOGIC
INPUT
C
COM
1
V
OUT2
COM
2
R
L2
300Ω
300Ω
35pF
V
OUT
C
L
V
OUT1
R
L1
C
L2
C
L1
35pF
FIGURE 3A. MEASUREMENT POINTS (ISL84543 ONLY)
7
C
includes fixture and stray capacitance.
L
FIGURE 3B. TEST CIRCUIT (ISL84543 ONLY)
ISL84541, ISL84542, ISL84543, ISL84544
Test Circuits and Waveforms (Continued)
V
OUT
3V
0V
0V
t
D
FIGURE 3. BREAK-BEFORE-MAKE TIME
LOGIC
INPUT
SWITCH
OUTPUT
FIGURE 3C. MEASUREMENT POINTS (ISL84544 ONLY)
90%
V+
V
NX
LOGIC
INPUT
includes fixture and stray capacitance.
C
L
NO
NC
IN
GND
FIGURE 3D. TEST CIRCUIT (ISL84544 ONLY)
C
V
R
300Ω
OUT
C
L
L
35pF
COM
SIGNAL
GENERATOR
ANALYZER
FIGURE 4. OFF ISOLATION TEST CIRCUITFIGURE 5. R
SIGNAL
GENERATOR
R
L
0V or 2.4V
NO or NC
COM
NO1 or NC1
IN
1
GND
V+
IN
V+
COM1
IN
C
X
C
0V or 2.4V
2
0V or 2.4V
50Ω
RON = V1/1mA
V
NX
IMPEDANCE
ANALYZER
1mA
V
1
NO or NC
COM
GND
TEST CIRCUIT
ON
NO or NC
V+
IN
V+
IN
C
0.8V or 2.4V
C
0V or 2.4V
X
ANALYZER
COM2
R
L
NO2 or NC2
GND
NC
COM
GND
FIGURE 6. CROSSTALK TEST CIRCUITFIGURE 7. CAPACITANCE TEST CIRCUIT
8
ISL84541, ISL84542, ISL84543, ISL84544
Detailed Description
The ISL84541–ISL84544 dual analog switches offer precise
switching capability from a single 2.7V to 12V supply with
low on-resistance (30Ω) and high speed operation
(t
=35ns, t
ON
suited to portable battery powered equipment thanks to the
low operating supply voltage (2.7V), low power consumption
(5µW), low leakage currents (100pA max), and the tiny
SOT-23 packaging. High frequency applications also benefit
from the wide bandwidth, and the very high off isolation and
crosstalk rejection.
Supply Sequencing And Overvoltage Protection
With any CMOS device, proper power supply sequencing is
required to protect the device from excessive input currents
which might permanently damage the IC. All I/O pins contain
ESD protection diodes from the pin to V+ and to GND (see
Figure 8). To prevent forward biasing these diodes, V+ must
be applied before any input signals, and input signal voltages
must remain between V+ and GND. If these conditions cannot
be guaranteed, then one of the following two protection
methods should be employed.
Logic inputs can easily be protected by adding a 1kΩ resistor
in series with the input (see Figure 8). The resistor limits the
input current below the threshold that produces permanent
damage, and the sub-microamp input current produces an
insignificant voltage drop during normal operation.
Adding a series resistor to the switch input defeats the
purpose of using a low R
can be added in series with the supply pins to provide
overvoltage protection for all pins (see Figure 8). These
additional diodes limit the analog signal from 1V below V+ to
1V above GND. The low leakage current performance is
unaffected by this approach, but the switch resistance may
increase, especially at low supply voltages.
OPTIONAL
PROTECTION
RESISTOR
Power-Supply Considerations
The ISL8454X construction is typical of most CMOS analog
switches, except that they have only two supply pins: V+ and
GND. V+ and GND drive the internal CMOS switches and set
= 25ns). The devices are especially well
OFF
switch, so two small signal diodes
ON
OPTIONAL PROTECTION
DIODE
V+
IN
X
V
NO or NC
GND
OPTIONAL PROTECTION
DIODE
FIGURE 8. OVERVOLTAGE PROTECTION
V
COM
their analog voltage limits. Unlike switches with a 13V
maximum supply voltage, the ISL8454X 15V maximum supply
voltage provides plenty of room for the 10% tolerance of 12V
supplies, as well as room for overshoot and noise spikes.
The minimum recommended supply voltage is 2.7V. It is
important to note that the input signal range, switching times,
and on-resistance degrade at lower supply voltages. Refer to
the electrical specification tables and Typical Performance
curves for details.
V+ and GND also power the internal logic and level shifters.
The level shifters convert the logic levels to switched V+ and
GND signals to drive the analog switch gate terminals.
This family of switches cannot be operated with bipolar
supplies, because the input switching point becomes negative
in this configuration.
Logic-Level Thresholds
This switch family is TTL compatible (0.8V and 2.4V) over a
supply range of 3V to 11V (see Figure 15). At 12V the V
IH
level is about 2.5V. This is still below the TTL guaranteed
high output minimum level of 2.8V, but noise margin is
reduced. For best results with a 12V supply, use a logic
family the provides a V
greater than 3V.
OH
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
High-Frequency Performance
In 50Ω systems, signal response is reasonably flat even past
300MHz (see Figure 16). Figure 16 also illustrate s that the
frequency response is very consistent over a wide V+ range,
and for varying analog signal levels.
An off switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from a switch’s input to its output. Off Isolation
is the resistance to this feedthrough, while Crosstalk
indicates the amount of feedthrough from one switch to
another. Figure 17 details the high Off Isolation and
Crosstalk rejection provided by this family. At 10MHz, off
isolation is about 50dB in 50Ω systems, decreasing
approximately 20dB per decade as frequency increases.
Higher load impedances decrease Off Isolation and
Crosstalk rejection due to the voltage divider action of the
switch OFF impedance and the load impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal exceeds
V+ or GND.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
9
ISL84541, ISL84542, ISL84543, ISL84544
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analogsignal-path leakage current. All analog leakage current flows
Typical Performance Curves T
40
35
30
25
(Ω)
ON
20
R
15
10
85oC
25oC
-40oC
5
345678910111213
V+ (V)
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE
= 25oC, Unless Otherwise Specified
A
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog-signal
paths and V+ or GND.
45
40
35
30
25
20
15
30
(Ω)
25
ON
20
R
15
10
20
85oC
15
10
-40oC
5
04681012
2
25oC
85oC
25oC
-40oC
85oC
25oC
-40oC
V
COM
(V)
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE
V+ = 3.3V
V+ = 5V
V+ = 12V
0.5
0.4
0.3
0.2
0.1
0.25
0.2
0.15
(Ω)
0.1
ON
∆R
0.05
0.15
0.1
0.05
25oC
85oC
0
25oC
85oC
0
-40oC
0
04681012
FIGURE 11. R
-40oC
85oC
-40oC
25oC
85oC
2
ON
V
(V)
COM
MATCH vs SWITCH VOLTAGE
-40oC
V+ = 3.3V
V+ = 5V
V+ = 12V
25oC
60
50
40
30
20
Q (pC)
10
V+ = 3.3V
0
-10
-20
04681012
2
V+ = 5V
V
COM
V+ = 12V
(V)
FIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE
10
ISL84541, ISL84542, ISL84543, ISL84544
Typical Performance Curves T
100
90
80
70
60
(ns)
ON
t
50
40
30
20
23456789101112
85oC
-40oC
25oC
V+ (V)
= 25oC, Unless Otherwise Specified (Continued)
A
35
30
(ns)
25
OFF
t
-40oC
20
15
23456789101112
85oC
V+ (V)
FIGURE 13. TURN - ON TIME vs SUPPLY VOLTAGEFIGURE 14. TURN - OFF TIME vs SUPPLY VOLTAGE
3.0
2.5
V
INH
V+ = 3.3V to 12V
0
GAIN
-3
-6
-40oC
25oC
(V)
2.0
INL
AND V
1.5
INH
V
1.0
85oC
0.5
34678910111213
25
-40oC
25oC
-40oC
V+ (V)
85oC
85oC
25oC
V
INL
FIGURE 15. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
-10
V+ = 3V to 13V
-20
-30
-40
-50
-60
-70
CROSSTALK (dB)
-80
-90
-100
-110
1k100k1M100M 500M10k10M
ISOLATION
FREQUENCY (Hz)
CROSSTALK
10
20
30
40
50
60
70
80
90
100
110
FIGURE 17. CROSSTALK AND OFF ISOLATION
PHASE
NORMALIZED GAIN (dB)
RL = 50Ω
VIN = 0.2V
= 0.2V
V
IN
= 0.2V
V
IN
110100600
P-P
P-P
P-P
to 2.5V
to 4V
to 5V
(V+ = 3.3V)
P-P
(V+ = 5V)
P-P
(V+ = 12V)
P-P
FREQUENCY (MHz)
0
20
40
60
80
100
PHASE (DEGREES)
FIGURE 16. FREQUENCY RESPONSE
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
ISL84541: 66
ISL84542: 66
ISL84543: 66
OFF ISOLATION (dB)
ISL84544: 58
PROCESS:
Si Gate CMOS
11
ISL84541, ISL84542, ISL84543, ISL84544
Dual-In-Line Plastic Packages (PDIP)
N
D1
-C-
E1
-B-
A2
A
L
A
1
e
C
e
e
INDEX
AREA
BASE
PLANE
SEATING
PLANE
D1
B1
12 3N/2
-AD
e
B
0.010 (0.25)C AMBS
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between
English and Metric dimensions, the inch dimensions control.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication No. 95.
4. Dimensions A, A1 and L are measured with the package seated
in JEDEC seating plane gauge GS-3.
5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 inch
(0.25mm).
6. E andare measured with the leads constrained to be per-
7. e
e
pendicular to datum .
A
and eC are measured at the lead tips with the leads uncon-
B
strained. e
must be zero or greater.
C
-C-
8. B1 maximum dimensions do not include dambar protrusions.
Dambar protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3,
E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch
(0.76 - 1.14mm).
E8.3 (JEDEC MS-001-BA ISSUE D)
8 LEAD DUAL-IN-LINE PLASTIC PACKAGE
INCHESMILLIMETERS
SYMBOL
A-0.210-5.334
E
A10.015-0.39-4
A20.1150.1952.934.95-
B0.0140.0220.3560.558-
C
L
A
C
B
B10.0450.0701.151.778, 10
C0.0080.0140.2040.355D0.3550.4009.0110.165
D10.005-0.13-5
E0.3000.3257.628.256
E10.2400.2806.107.115
e0.100 BSC2.54 BSC-
e
A
e
B
0.300 BSC7.62 BSC6
-0.430-10.927
L0.1150.1502.933.814
N889
NOTESMINMAXMINMAX
Rev. 0 12/93
12
ISL84541, ISL84542, ISL84543, ISL84544
Mini Small Outline Plastic Packages (MSOP)
N
EE1
INDEX
AREA
AA1A2
-H-
SIDE VIEW
12
TOP VIEW
b
e
D
NOTES:
1. These package dimensions are within allowable dimensions of
JEDEC MO-187BA.
2. Dimensioning and tolerancing per ANSI Y14.5M-1994.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs and are measured at Datum Plane. Mold flash, protrusion
and gate burrs shall not exceed 0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions
and are measured at Datum Plane.Interlead flash and
protrusions shall not exceed 0.15mm (0.006 inch) per side.
5. Formed leads shall be planar with respect to one another within
0.10mm (0.004) at seating Plane.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
- H -
-A -
.
10. Datumsandto be determined at Datum plane
11. Controlling dimension: MILLIMETER. Converted inch dimensions are for reference only.
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data she ets are current before placin g orders. Information furn ished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or othe rwise under any patent or patent righ ts of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
16
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