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ISL6609, ISL6609A
Data Sheet August 10, 2005
Synchronous Rectified MOSFET Driver
The ISL6609, ISL6609A is a high frequency, MOSFET driver
optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. This driver
combined with an Intersil ISL63xx or ISL65xx multiphase
PWM controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.
The ISL6609, ISL6609A features 4A typical sink current for
the lower gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the lower
MOSFET due to the high dV/dt of the switching node.
The ISL6609, ISL6609A also features an input that
recognizes a high-impedance state, working together with
Intersil multiphase PWM controllers to prevent negative
transients on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage. In addition, the
ISL6609A’s bootstrap function is designed to prevent the
BOOT capacitor from overcharging, should excessively large
negative swings occur at the transitions of the PHASE node.
Ordering Information
PART NUMBER
(Note)
ISL6609CBZ 0 to 70 8 Ld SOIC M8.15
ISL6609CRZ 0 to 70 8 Ld 3x3 QFN L8.3x3
ISL6609ACBZ 0 to 70 8 Ld SOIC M8.15
ISL6609ACRZ 0 to 70 8 Ld 3x3 QFN L8.3x3
Add “-T” suffix for tape and reel.
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
TEMP.
RANGE (°C)
PACKAGE
(Pb-Free)
PKG.
DWG. #
FN9221.0
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
•0.4Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency
- Fast Output Rise and Fall
- Ultra Low Three-State Hold-Off Time (20ns)
• ISL6605 Replacement with Enhanced Performance
• BOOT Capacitor Overcharge Prevention (ISL6609A)
•Low V
Internal Bootstrap Diode
F
• Low Bias Supply Current
• Enable Input and Power-On Reset
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• Core Voltage Supplies for Intel® and AMD®
Microprocessors
• High Frequency Low Profile High Efficiency DC/DC
Converters
• High Current Low Voltage DC/DC Converters
• Synchronous Rectification for Isolated Power Supplies
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
1
AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
Copyright Intersil Americas Inc. 2005. All Rights Reserved. Intel® is a registered trademark of Intel Corporation.
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
Pinouts
ISL6609/09A(SOIC)
TOP VIEW
ISL6609, ISL6609A
ISL6609/09A (QFN)
TOP VIEW
UGATE
BOOT
PWM
GND
Block Diagram
1
2
3
4
8
7
6
5
PHASE
EN
VCC
LGATE
BOOT
PWM
UGATE
PHASE
7
8
1
2
GND
6
6
EN
5
VCC
43
LGATE
ISL6609 and ISL6609A
R
SHOOT-
THROUGH
BOOT
BOOT
UGATE
PHASE
VCC
LGATE
VCC
EN
PWM
VCC
4.25K
PROTECTION
CONTROL
LOGIC
4K
INTEGRATED 3Ω RESISTOR (R
) AVAILABLE ONLY IN ISL6609A
BOOT
GND
2
FN9221.0
August 10, 2005
ISL6609, ISL6609A
Typical Application - Multiphase Converter Using ISL6609 Gate Drivers
V
IN
+5V
+5V
PGOOD
VID
(OPTIONAL)
+5V
FB
VCC
VSEN
PWM
CONTROL
(ISL63XX
or ISL65XX)
FS/EN
GND
ISL6609
ISL6609
BOOT
UGATE
PHASE
LGATE
BOOT
UGATE
PHASE
LGATE
COMP
PWM1
PWM2
ISEN1
ISEN2
R
IS REQUIRED FOR SPECIAL POWER SEQUENCING APPLICATIONS
UGPH
(SEE APPLICATION INFORMATION SECTION ON PAGE 8)
VCC
EN
PWM
+5V
VCC
EN
PWM
R
UGPH
+V
V
IN
R
UGPH
CORE
3
FN9221.0
August 10, 2005
ISL6609, ISL6609A
Absolute Maximum Ratings Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
Input Voltage (V
BOOT Voltage (V
BOOT To PHASE Voltage (V
, V
EN
PWM
BOOT-GND
) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
). . . -0.3V to 25V (DC) or 36V (<200ns)
BOOT-PHASE
) . . . . . . -0.3V to 7V (DC)
-0.3V to 9V (<10ns)
PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)
GND -8V (<20ns Pulse Width, 10µJ) to 30V (<100ns)
UGATE Voltage . . . . . . . . . . . . . . . . V
V
- 5V (<20ns Pulse Width, 10µJ) to V
PHASE
- 0.3V (DC) to V
PHASE
BOOT
BOOT
LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V
GND - 2.5V (<20ns Pulse Width, 5µJ) to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to 125°C
HBM ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to 100°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125°C
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
1. θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.
2. θ
JA
, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.
3. θ
JC
Thermal Resistance (Notes 1, 2, & 3) θ
(°C/W) θJC(°C/W)
JA
SOIC Package (Note 1) . . . . . . . . . . . . 110 N/A
QFN Package (Notes 2 & 3) . . . . . . . . 95 36
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C
Maximum Storage Temperature Range. . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Electrical Specifications These specifications apply for T
= -40°C to 100°C, unless otherwise noted
A
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Bias Supply Current I
VCC
PWM pin floating, V
= 5V - 132 - µA
VCC
POR Rising -3.44.2
POR Falling 2.2 3.0 -
Hysteresis - 400 - mV
PWM INPUT
Sinking Impedance R
Source Impedance R
PWM_SNK
PWM_SRC
Three-State Rising Threshold V
Three-State Falling Threshold V
Three-State Shutdown Holdoff Time t
TSSHDtPDLU
= 5V (100mV Hysteresis) - 1.70 2.00 V
VCC
= 5V (100mV Hysteresis) 3.10 3.41 - V
VCC
or t
+ Gate Falling Time - 20 - ns
PDLL
2.75 4 5.5 kΩ
3 4.25 5.75 kΩ
EN INPUT
EN LOW Threshold 1.0 1.3 - V
EN HIGH Threshold -1.62.0V
SWITCHING TIME (See Figure 1 on Page 6)
UGATE Rise Time (Note 4) t
LGATE Rise Time (Note 4) t
UGATE Fall Time (Note 4) t
LGATE Fall Time (Note 4) t
UGATE Turn-Off Propagation Delay t
LGATE Turn-Off Propagation Delay t
RU
RL
FU
FL
PDLU
PDLL
V
= 5V, 3nF Load - 8.0 - ns
VCC
V
= 5V, 3nF Load - 8.0 - ns
VCC
V
= 5V, 3nF Load - 8.0 - ns
VCC
V
= 5V, 3nF Load - 4.0 - ns
VCC
V
= 5V, Outputs Unloaded - 18 - ns
VCC
V
= 5V, Outputs Unloaded - 25 - ns
VCC
4
FN9221.0
August 10, 2005
ISL6609, ISL6609A
Electrical Specifications These specifications apply for T
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
UGATE Turn-On Propagation Delay t
LGATE Turn-On Propagation Delay t
Three-state to UG/LG Rising Propagation
Delay
OUTPUT
Upper Drive Source Resistance R
Upper Drive Sink Resistance R
Lower Drive Source Resistance R
Lower Drive Sink Resistance R
NOTE:
4. Guaranteed by Characterization. Not 100% tested in production.
PDHU
PDHL
t
PTS
UG_SRC
UG_SNK
LG_SRC
LG_SNK
V
VCC
V
VCC
V
VCC
250mA Source Current - 1.0 2.5 Ω
250mA Sink Current - 1.0 2.5 Ω
250mA Source Current - 1.0 2.5 Ω
250mA Sink Current - 0.4 1.0 Ω
Functional Pin Description
Note: Pin numbers refer to the SOIC package. Check
diagram for corresponding QFN pinout.
UGATE (Pin 1)
Upper gate drive output. Connect to gate of high-side
N-Channel power MOSFET. A gate resistor is never
recommended on this pin, as it interferes with the operation
shoot-through protection circuitry.
BOOT (Pin 2)
Floating bootstrap supply pin for the upper gate drive.
Connect a bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge
used to turn on the upper MOSFET. See the Bootstrap
Considerations section for guidance in choosing the
appropriate capacitor value.
PWM (Pin 3)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
Three-state PWM Input section for further details. Connect this
pin to the PWM output of the controller.
GND (Pin 4)
Ground pin. All signals are referenced to this node.
= -40°C to 100°C, unless otherwise noted (Continued)
A
= 5V, Outputs Unloaded - 18 - ns
= 5V, Outputs Unloaded - 23 - ns
= 5V, Outputs Unloaded - 20 - ns
LGATE (Pin 5)
Lower gate drive output. Connect to gate of the low side
N-Channel power MOSFET. A gate resistor is never
recommended on this pin, as it interferes with the operation
shoot-through protection circuitry.
VCC (Pin 6)
Connect this pin to a +5V bias supply. Locally bypass with a
high quality ceramic capacitor to ground.
EN (Pin 7)
Enable input pin. Connect this pin high to enable and low to
disable the driver.
PHASE (Pin 8)
Connect this pin to the source of the upper MOSFET. This
pin provides the return path for the upper gate driver current.
Thermal Pad (in QFN only)
The metal pad underneath the center of the IC is a thermal
substrate. The PCB “thermal land” design for this exposed
die pad should include vias that drop down and connect to
one or more buried copper plane(s). This combination of
vias for vertical heat escape and buried planes for heat
spreading allows the QFN to achieve its full thermal
potential. This pad should be either grounded or floating,
and it should not be connected to other nodes. Refer to
TB389 for design guidelines.
5
FN9221.0
August 10, 2005
Timing Diagram
PWM
t
PDHU
t
PDLU
ISL6609, ISL6609A
2.5V
t
TSSHD
t
RU
UGATE
LGATE
t
PDLL
1V
1V
t
RL
t
PDHL
FIGURE 1. TIMING DIAGRAM
Operation and Adaptive Shoot-Through Protection
Designed for high speed switching, the ISL6609/09A MOSFET
driver controls both high-side and low-side N-Channel FETs
from one externally provided PWM signal.
A rising transition on PWM initiates the turn-off of the lower
MOSFET (see Timing Diagram). After a short propagation
delay [t
[t
] are provided in the Electrical Specifications. Adaptive
FL
shoot-through circuitry monitors the LGATE voltage and
turns on the upper gate following a short delay time [t
after the LGATE voltage drops below ~1V. The upper gate
drive then begins to rise [t
turns on.
A falling transition on PWM indicates the turn-off of the upper
MOSFET and the turn-on of the lower MOSFET. A short
propagation delay [t
gate begins to fall [t
monitors the UGATE-PHASE voltage and turns on the lower
MOSFET a short delay time, t
MOSFET’s gate voltage drops below 1V. The lower gate then
rises [t
prevent both the lower and upper MOSFETs from conducting
simultaneously (shoot-through), while adapting the dead
time to the gate charge characteristics of the MOSFETs
being used.
This driver is optimized for voltage regulators with large step
down ratio. The lower MOSFET is usually sized larger
compared to the upper MOSFET because the lower
MOSFET conducts for a longer time during a switching
period. The lower gate driver is therefore sized much larger
to meet this application requirement. The 0.4Ω on-resistance
], the lower gate begins to fall. Typical fall times
PDLL
] and the upper MOSFET
RU
] is encountered before the upper
PDLU
]. The adaptive shoot-through circuitry
FU
, after the upper
PDHL
], turning on the lower MOSFET. These methods
RL
PDHU
t
RU
t
PTS
t
TSSHD
t
FL
t
FU
t
PTS
and 4A sink current capability enable the lower gate driver to
absorb the current injected into the lower gate through the
drain-to-gate capacitor of the lower MOSFET and help
prevent shoot through caused by the self turn-on of the lower
MOSFET due to high dV/dt of the switching node.
Three-State PWM Input
A unique feature of the ISL6609/09A is the adaptable threestate PWM input. Once the PWM signal enters the shutdown
window, either MOSFET previously conducting is turned off.
]
If the PWM signal remains within the shutdown window for
longer than the gate turn-off propagation delay of the
previously conducting MOSFET, the output drivers are
disabled and both MOSFET gates are pulled and held low.
The shutdown state is removed when the PWM signal
moves outside the shutdown window. The PWM rising and
falling thresholds outlined in the Electrical Specifications
determine when the lower and upper gates are enabled.
During normal operation in a typical application, the PWM
rise and fall times through the shutdown window should not
exceed either output’s turn-off propagation delay plus the
MOSFET gate discharge time to ~1V. Abnormally long PWM
signal transition times through the shutdown window will
simply introduce additional dead time between turn off and
turn on of the synchronous bridge’s MOSFETs. For optimal
performance, no more than 100pF parasitic capacitive load
should be present on the PWM line of ISL6609/09A
(assuming an Intersil PWM controller is used).
Bootstrap Considerations
This driver features an internal bootstrap diode. Simply
adding an external capacitor across the BOOT and PHASE
pins completes the bootstrap circuit. The ISL6609A’s internal
6
FN9221.0
August 10, 2005
ISL6609, ISL6609A
bootstrap resistor is designed to reduce the overcharging of
the bootstrap capacitor when exposed to excessively large
negative voltage swing at the PHASE node. Typically, such
large negative excursions occur in high current applications
that use D
2
-PAK and D-PAK MOSFETs or excessive layout
parasitic inductance.
The following equation helps select a proper bootstrap
capacitor size:
Q
GATE
C
BOOT_CAP
Q
GATE
where Q
at V
GS1
control MOSFETs. The ∆V
--------------------------------------
≥
∆V
BOOT_CAP
QG1VCC•
-------------------------------
V
is the amount of gate charge per upper MOSFET
G1
GS1
•=
N
Q1
gate-source voltage and NQ1 is the number of
BOOT_CAP
term is defined as the
(EQ. 1)
allowable droop in the rail of the upper gate drive.
As an example, suppose two IRLR7821 FETs are chosen as
the upper MOSFETs. The gate charge, Q
sheet is 10nC at 4.5V (V
Q
is calculated to be 22nC at VCC level. We will
GATE
) gate-source voltage. Then the
GS
, from the data
G
assume a 200mV droop in drive voltage over the PWM
cycle. We find that a bootstrap capacitance of at least
0.110µF is required. The next larger standard value
capacitance is 0.22µF. A good quality ceramic capacitor is
recommended.
2.0
1.8
1.6
1.4
1.2
(µF)
1.0
0.8
BOOT_CAP
C
0.6
0.4
0.2
20nC
0.0
FIGURE 2. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
Q
50nC
VOLTAGE
= 100nC
GATE
0.30.0 0.1 0.2 0.4 0.5 0.6 0.90.7 0.8 1.0
∆V
(V)
BOOT
Power Dissipation
Package power dissipation is mainly a function of the
switching frequency (F
external gate resistance, and the selected MOSFET’s
internal gate resistance and total gate charge. Calculating
the power dissipation in the driver for a desired application is
critical to ensure safe operation. Exceeding the maximum
), the output drive impedance, the
SW
allowable power dissipation level will push the IC beyond the
maximum recommended operating junction temperature of
125°C. The maximum allowable IC power dissipation for the
SO8 package is approximately 800mW at room temperature,
while the power dissipation capacity in the QFN package,
with an exposed heat escape pad, is slightly better. See
Layout Considerations paragraph for thermal transfer
improvement suggestions. When designing the driver into an
application, it is recommended that the following calculation
is used to ensure safe operation at the desired frequency for
the selected MOSFETs. The total gate drive power losses
due to the gate charge of MOSFETs and the driver’s internal
circuitry and their corresponding average driver current can
be estimated with Equations 2 and 3, respectively,
P
Qg_TOTPQg_Q1PQg_Q2IQ
V
•
GS1
•
GS2
2
2
G1
QG1VCC
P
Qg_Q1
P
Qg_Q2
QG1UVCC NQ1••
------------------------------------------------------
I
DR
----------------------------------
QG2VCC
----------------------------------
V
V
GS1
where the gate charge (Q
particular gate to source voltage (V
corresponding MOSFET datasheet; I
VCC•++=
• NQ1•=
F
SW
• NQ2•=
F
SW
Q
LVCC NQ2••
G2
-----------------------------------------------------+
V
GS2
and QG2) is defined at a
and V
GS1
Q
GS2
is the driver’s total
quiescent current with no load at both drive outputs; N
and N
respectively. The I
are number of upper and lower MOSFETs,
Q2
product is the quiescent power of
Q VCC
(EQ. 2)
FSWIQ+•=
(EQ. 3)
) in the
Q1
the driver without capacitive load and is typically negligible.
The total gate drive power losses are dissipated among the
resistive components along the transition path. The drive
resistance dissipates a portion of the total gate drive power
losses, the rest will be dissipated by the external gate
resistors (R
and RG2, should be a short to avoid
G1
interfering with the operation shoot-through protection
circuitry) and the internal gate resistors (R
GI1
and R
GI2
) of
MOSFETs. Figures 3 and 4 show the typical upper and lower
gate drives turn-on transition path. The power dissipation on
the driver can be roughly estimated as:
P
DRPDR_UPPDR _LOWIQ
R
HI1
P
DR_UP
P
DR _LOW
R
EXT2RG1
--------------------------------------
R
+
HI1REXT1
R
HI2
--------------------------------------
R
+
HI2REXT2
R
GI1
-------------+=
N
Q1
VCC•++=
R
LO1
----------------------------------------+
R
+
LO1REXT1
R
LO2
----------------------------------------+
R
+
LO2REXT2
R
EXT2RG2
P
Qg_Q1
---------------------
•=
P
---------------------
•=
R
-------------+=
N
(EQ. 4)
2
Qg_Q2
2
GI2
Q2
7
FN9221.0
August 10, 2005
ISL6609, ISL6609A
VCC
FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH
VCC
R
R
FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH
R
R
HI2
LO2
HI1
LO1
BOOT
UGATE
PHASE
LGATE
GND
D
C
GD
G
R
GI1
R
G1
C
GS
S
C
GD
G
R
GI2
R
G2
C
GS
S
C
DS
Q1
D
C
DS
Q2
Layout Considerations
A good layout helps reduce the ringing on the switching
node (PHASE) and significantly lower the stress applied to
the output drives. The following advice is meant to lead to an
optimized layout:
• Keep decoupling loops (VCC-GND and BOOT-PHASE) as
short as possible.
• Minimize trace inductance, especially on low-impedance
lines. All power traces (UGATE, PHASE, LGATE, GND,
VCC) should be short and wide, as much as possible.
• Minimize the inductance of the PHASE node. Ideally, the
source of the upper and the drain of the lower MOSFET
should be as close as thermally allowable.
• Minimize the current loop of the output and input power
trains. Short the source connection of the lower MOSFET
to ground as close to the transistor pin as feasible. Input
capacitors (especially ceramic decoupling) should be
placed as close to the drain of upper and source of lower
MOSFETs as possible.
In addition, connecting the thermal pad of the QFN package
to the power ground through a via, or placing a low noise
copper plane underneath the SOIC part is recommended for
high switching frequency, high current applications. This is to
improve heat dissipation and allow the part to achieve its
full thermal potential.
Application Information
MOSFET and Driver Selection
The parasitic inductances of the PCB and of the power
devices’ packaging (both upper and lower MOSFETs) can
cause serious ringing, exceeding absolute maximum rating
of the devices. The negative ringing at the edges of the
PHASE node could increase the bootstrap capacitor voltage
through the internal bootstrap diode, and in some cases, it
may overstress the upper MOSFET driver. Careful layout,
proper selection of MOSFETs and packaging, as well as the
proper driver can go a long way toward minimizing such
unwanted stress.
The selection of D
a much better match (for the reasons discussed) for the
ISL6609A. Low-profile MOSFETs, such as Direct FETs and
multi-SOURCE leads devices (SO-8, LFPAK, PowerPAK),
have low parasitic lead inductances and can be driven by
either ISL6609 or ISL6609A (assuming proper layout
design). The ISL6609, missing the 3Ω integrated BOOT
resistor, typically yields slightly higher efficiency than the
ISL6609A.
2
-PAK, or D-PAK packaged MOSFETs, is
Upper MOSFET Self Turn-On Effects at Startup
Should the driver have insufficient bias voltage applied, its
outputs are floating. If the input bus is energized at a high
dV/dt rate while the driver outputs are floating, because of
self-coupling via the internal C
UGATE could momentarily rise up to a level greater than the
threshold voltage of the MOSFET. This could potentially turn
on the upper switch and result in damaging inrush energy.
Therefore, if such a situation (when input bus powered up
before the bias of the controller and driver is ready) could
conceivably be encountered, it is a common practice to
place a resistor (R
) across the gate and source of the
UGPH
upper MOSFET to suppress the Miller coupling effect. The
value of the resistor depends mainly on the input voltage’s
rate of rise, the C
GD/CGS
ratio, as well as the gate-source
threshold of the upper MOSFET. A higher dV/dt, a lower
C
DS/CGS
ratio, and a lower gate-source threshold upper
FET will require a smaller resistor to diminish the effect of
the internal capacitive coupling. For most applications, a
5k to 10kΩ resistor is typically sufficient, not affecting normal
performance and efficiency.
The coupling effect can be roughly estimated with the
following equations, which assume a fixed linear input ramp
and neglect the clamping effect of the body diode of the
upper drive and the bootstrap capacitor. Other parasitic
components such as lead inductances and PCB
capacitances are also not taken into account. These
equations are provided for guidance purpose only.
of the MOSFET, the
GD
8
FN9221.0
August 10, 2005
ISL6609, ISL6609A
Therefore, the actual coupling effect should be examined
using a very high impedance (10MΩ or greater) probe to
ensure a safe design margin.
V–
DS
----------------------------- ---- -
dV
-------
RC⋅
⋅
iss
dt
(EQ. 5)
C
issCGDCGS
+=
V
GS_MILLER
RR
UGPHRGI
dV
-------
⋅⋅=
dt
+=
1e
RC
–
rss
C
=
rssCGD
VCC
ISL6609/A
DU
DL
BOOT
C
BOOT
UGATE
PHASE
UGPH
R
C
GD
G
R
GI
VIN
D
C
GS
Q
UPPER
S
FIGURE 5. GATE TO SOURCE RESISTOR TO REDUCE
UPPER MOSFET MILLER COUPLING
C
DS
9
FN9221.0
August 10, 2005
ISL6609, ISL6609A
Quad Flat No-Lead Plastic Package (QFN)
Micro Lead Frame Plastic Package (MLFP)
L8.3x3
8 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE
(COMPLIANT TO JEDEC MO-220VEEC ISSUE C)
MILLIMETERS
SYMBOL
A 0.80 0.90 1.00 -
A1 - - 0.05 -
A2 - - 1.00 9
A3 0.20 REF 9
b 0.23 0.28 0.38 5, 8
D 3.00 BSC -
D1 2.75 BSC 9
D2 0.25 1.10 1.25 7, 8
E 3.00 BSC -
E1 2.75 BSC 9
E2 0.25 1.10 1.25 7, 8
e 0.65 BSC -
k0.25 - -
L 0.35 0.60 0.75 8
L1 - - 0.15 10
N82
Nd 2 3
Ne 2 3
P- -0.609
θ --129
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide
improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern
Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P & θ are present when
Anvil singulation method is used and not present for saw
singulation.
10. Depending on the method of lead termination at the edge of the
package, a maximum 0.15mm pull back (L1) maybe present. L
minus L1 to be equal to or greater than 0.3mm.
NOTESMIN NOMINAL MAX
Rev. 1 10/02
10
FN9221.0
August 10, 2005
ISL6609, ISL6609A
Small Outline Plastic Packages (SOIC)
N
INDEX
AREA
123
-A-
E
-B-
SEATING PLANE
D
A
-C-
0.25(0.010) BM M
H
L
h x 45°
α
e
B
0.25(0.010) C AM BS
M
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per
side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
A1
C
0.10(0.004)
M8.15 (JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
INCHES MILLIMETERS
SYMBOL
A 0.0532 0.0688 1.35 1.75 -
A1 0.0040 0.0098 0.10 0.25 -
B 0.013 0.020 0.33 0.51 9
C 0.0075 0.0098 0.19 0.25 D 0.1890 0.1968 4.80 5.00 3
E 0.1497 0.1574 3.80 4.00 4
e 0.050 BSC 1.27 BSC H 0.2284 0.2440 5.80 6.20 h 0.0099 0.0196 0.25 0.50 5
L 0.016 0.050 0.40 1.27 6
N8 87
α
0° 8° 0° 8° -
NOTESMIN MAX MIN MAX
Rev. 1 6/05
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
FN9221.0
August 10, 2005
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