intersil ISL6609, ISL6609A DATA SHEET

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ISL6609, ISL6609A

Data Sheet August 10, 2005

Synchronous Rectified MOSFET Driver

The ISL6609, ISL6609A is a high frequency, MOSFET driver
optimized to drive two N-Channel power MOSFETs in a
synchronous-rectified buck converter topology. This driver
combined with an Intersil ISL63xx or ISL65xx multiphase
PWM controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.

The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3nF load with less than
10ns rise/fall time. Bootstrapping of the upper gate driver is
implemented via an internal low forward drop diode,
reducing implementation cost, complexity, and allowing the
use of higher performance, cost effective N-Channel
MOSFETs. Adaptive shoot-through protection is integrated
to prevent both MOSFETs from conducting simultaneously.

The ISL6609, ISL6609A features 4A typical sink current for
the lower gate driver, enhancing the lower MOSFET gate
hold-down capability during PHASE node rising edge,
preventing power loss caused by the self turn-on of the lower
MOSFET due to the high dV/dt of the switching node.

The ISL6609, ISL6609A also features an input that
recognizes a high-impedance state, working together with
Intersil multiphase PWM controllers to prevent negative
transients on the controlled output voltage when operation is
suspended. This feature eliminates the need for the schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage. In addition, the
ISL6609A’s bootstrap function is designed to prevent the
BOOT capacitor from overcharging, should excessively large
negative swings occur at the transitions of the PHASE node.

Ordering Information

PART NUMBER

(Note)

ISL6609CBZ 0 to 70 8 Ld SOIC M8.15

ISL6609CRZ 0 to 70 8 Ld 3x3 QFN L8.3x3

ISL6609ACBZ 0 to 70 8 Ld SOIC M8.15

ISL6609ACRZ 0 to 70 8 Ld 3x3 QFN L8.3x3

Add “-T” suffix for tape and reel.

NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.

TEMP.

RANGE (°C)

PACKAGE

(Pb-Free)

PKG.

DWG. #

FN9221.0

Features

• Drives Two N-Channel MOSFETs

• Adaptive Shoot-Through Protection

•0.4Ω On-Resistance and 4A Sink Current Capability

• Supports High Switching Frequency

- Fast Output Rise and Fall

- Ultra Low Three-State Hold-Off Time (20ns)

• ISL6605 Replacement with Enhanced Performance

• BOOT Capacitor Overcharge Prevention (ISL6609A)

•Low V

Internal Bootstrap Diode

F

• Low Bias Supply Current

• Enable Input and Power-On Reset

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline

- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile

• Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

• Core Voltage Supplies for Intel® and AMD®
Microprocessors

• High Frequency Low Profile High Efficiency DC/DC
Converters

• High Current Low Voltage DC/DC Converters

• Synchronous Rectification for Isolated Power Supplies

Related Literature

• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”

1

AMD® is a registered trademark of Advanced Micro Devices, Inc. All other trademarks mentioned are the property of their respective owners.

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774

Copyright Intersil Americas Inc. 2005. All Rights Reserved. Intel® is a registered trademark of Intel Corporation.

| Intersil (and design) is a registered trademark of Intersil Americas Inc.

Pinouts

ISL6609/09A(SOIC)

TOP VIEW

ISL6609, ISL6609A

ISL6609/09A (QFN)

TOP VIEW

UGATE

BOOT

PWM

GND

Block Diagram

1

2

3

4

8

7

6

5

PHASE

EN

VCC

LGATE

BOOT

PWM

UGATE

PHASE

7

8

1

2

GND

6

6

EN

5

VCC

43

LGATE

ISL6609 and ISL6609A

R

SHOOT-

THROUGH

BOOT

BOOT

UGATE

PHASE

VCC

LGATE

VCC

EN

PWM

VCC

4.25K

PROTECTION

CONTROL

LOGIC

4K

INTEGRATED 3Ω RESISTOR (R

) AVAILABLE ONLY IN ISL6609A

BOOT

GND

2

FN9221.0

August 10, 2005

ISL6609, ISL6609A

Typical Application - Multiphase Converter Using ISL6609 Gate Drivers

V

IN

+5V

+5V

PGOOD

VID

(OPTIONAL)

+5V

FB

VCC

VSEN

PWM

CONTROL

(ISL63XX

or ISL65XX)

FS/EN

GND

ISL6609

ISL6609

BOOT

UGATE

PHASE

LGATE

BOOT

UGATE

PHASE

LGATE

COMP

PWM1

PWM2

ISEN1

ISEN2

R

IS REQUIRED FOR SPECIAL POWER SEQUENCING APPLICATIONS

UGPH

(SEE APPLICATION INFORMATION SECTION ON PAGE 8)

VCC

EN

PWM

+5V

VCC

EN

PWM

R

UGPH

+V

V

IN

R

UGPH

CORE

3

FN9221.0

August 10, 2005

ISL6609, ISL6609A

Absolute Maximum Ratings Thermal Information

Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V

Input Voltage (V
BOOT Voltage (V
BOOT To PHASE Voltage (V

, V

EN

PWM

BOOT-GND

) . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V

). . . -0.3V to 25V (DC) or 36V (<200ns)

BOOT-PHASE

) . . . . . . -0.3V to 7V (DC)

-0.3V to 9V (<10ns)

PHASE Voltage . . . . . . . . . . . . . . . . . . . . . GND - 0.3V to 15V (DC)

GND -8V (<20ns Pulse Width, 10µJ) to 30V (<100ns)

UGATE Voltage . . . . . . . . . . . . . . . . V

V

- 5V (<20ns Pulse Width, 10µJ) to V

PHASE

- 0.3V (DC) to V

PHASE

BOOT
BOOT

LGATE Voltage . . . . . . . . . . . . . . . GND - 0.3V (DC) to VCC + 0.3V

GND - 2.5V (<20ns Pulse Width, 5µJ) to VCC + 0.3V

Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to 125°C

HBM ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV

Recommended Operating Conditions

Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to 100°C

Maximum Operating Junction Temperature . . . . . . . . . . . . . . 125°C

Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

1. θ

JA

is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features.

2. θ

JA

, “case temperature” location is at the center of the package underside exposed pad. See Tech Brief TB379 for details.

3. θ

JC

Thermal Resistance (Notes 1, 2, & 3) θ

(°C/W) θJC(°C/W)

JA

SOIC Package (Note 1) . . . . . . . . . . . . 110 N/A

QFN Package (Notes 2 & 3) . . . . . . . . 95 36

Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150°C

Maximum Storage Temperature Range. . . . . . . . . . . -65°C to 150°C

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C

(SOIC - Lead Tips Only)

Electrical Specifications These specifications apply for T

= -40°C to 100°C, unless otherwise noted

A

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

VCC SUPPLY CURRENT

Bias Supply Current I

VCC

PWM pin floating, V

= 5V - 132 - µA

VCC

POR Rising -3.44.2

POR Falling 2.2 3.0 -

Hysteresis - 400 - mV

PWM INPUT

Sinking Impedance R

Source Impedance R

PWM_SNK

PWM_SRC

Three-State Rising Threshold V

Three-State Falling Threshold V

Three-State Shutdown Holdoff Time t

TSSHDtPDLU

= 5V (100mV Hysteresis) - 1.70 2.00 V

VCC

= 5V (100mV Hysteresis) 3.10 3.41 - V

VCC

or t

+ Gate Falling Time - 20 - ns

PDLL

2.75 4 5.5 kΩ

3 4.25 5.75 kΩ

EN INPUT

EN LOW Threshold 1.0 1.3 - V

EN HIGH Threshold -1.62.0V

SWITCHING TIME (See Figure 1 on Page 6)

UGATE Rise Time (Note 4) t

LGATE Rise Time (Note 4) t

UGATE Fall Time (Note 4) t

LGATE Fall Time (Note 4) t

UGATE Turn-Off Propagation Delay t

LGATE Turn-Off Propagation Delay t

RU

RL

FU

FL

PDLU

PDLL

V

= 5V, 3nF Load - 8.0 - ns

VCC

V

= 5V, 3nF Load - 8.0 - ns

VCC

V

= 5V, 3nF Load - 8.0 - ns

VCC

V

= 5V, 3nF Load - 4.0 - ns

VCC

V

= 5V, Outputs Unloaded - 18 - ns

VCC

V

= 5V, Outputs Unloaded - 25 - ns

VCC

4

FN9221.0

August 10, 2005