intersil ISL6608 DATA SHEET

®
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ISL6608
Data Sheet March 2004 FN9140.1
Synchronous Rectified MOSFET Driver with Pre-Biased Load Startup Capability
The ISL6608 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous­rectified buck converter topology. This driver combined with an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V) and minimizes gate drive losses due to MOSFET gate charge at high switching frequency applications. Each driver is capable of driving a 3000pF load with a low propagation delay and less than 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
The ISL6608 features 4A sink current for the lower gate driver, which is capable of holding the lower MOSFET gate during the Phase node rising edge to prevent shoot-through power loss caused by the high dv/dt of the Phase node.
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Adaptive Shoot-Through Protection
•0.5Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency up to 2MHz
- Fast Output Rise/Fall Time and Low Propagation Delay
• Three-State PWM Input for Power Stage Shutdown
• Internal Bootstrap Schottky Diode
• Low Bias Supply Current (5V, 80µA)
• Diode Emulation for Enhanced Light Load Efficiency and Pre-Biased Startup Applications
• VCC POR (Power-On-Reset) Feature Integrated
• Low Three-State Shutdown Holdoff Time (Typically 160ns)
• Pin-to-Pin Compatible with ISL6605
• QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
• Pb-free Available as an Option
The ISL6608 also features a Three-State PWM input which, working together with Intersil multi-phase PWM controllers, will prevent a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is usually seen in a microprocessor power system for protecting the microprocessor from reversed output voltage events.
A diode emulation feature is integrated in the ISL6608 to enhance converter efficiency at light load conditions. Diode emulation also prevents a negative transient when starting up with a pre-biased voltage on the output. When diode emulation is enabled, the driver allows discontinuous conduction mode by detecting when the inductor current reaches zero and subsequently turns off the low side MOSFET, which prevents the output from sinking current and producing a negative transient on a pre-biased output (see Figures 6 and 7 on page 7).
Applications
• Core Voltage Supplies for FPGAs and PowerPC Microprocessors
• Point-Of-Load Modules with Pre-Biased Start-Up Requirements
• High Frequency and High Current DC-DC Converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices”
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
All other trademarks mentioned are the property of their respective owners.
Copyright © Intersil Americas Inc. 2004. All Rights Reserved
ISL6608
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Ordering Information
TEMP RANGE
PART NUMBER
ISL6608CB 0 to 70 8 Ld SOIC M8.15
ISL6608CB-T 8 Ld SOIC Tape and Reel
ISL6608CR 0 to 70 8 Ld 3x3 QFN L8.3x3
ISL6608CR-T 8 Ld 3x3 QFN Tape and Reel
ISL6608CBZ (Note) 0 to 70 8 Ld SOIC
ISL6608CBZ-T 8 Ld SOIC Tape and Reel (Lead-Free)
ISL6608CRZ (Note) 0 to 70 8 Ld 3x3 QFN
ISL6608CRZ-T 8 Ld 3x3 QFN Tape and Reel (Lead-Free)
ISL6608IB -40 to 85 8 Ld SOIC M8.15
ISL6608IB-T 8 Ld SOIC Tape and Reel
ISL6608IR -40 to 85 8 Ld 3x3 QFN L8.3x3
(°C) PACKAGE
(Lead-Free)
(Lead-Free)
PKG.
DWG. #
M8.15
L8.3x3
Pinouts
ISL6608CB (SOIC)
TOP VIEW
Ordering Information (Continued)
TEMP RANGE
PART NUMBER
ISL6608IR-T 8 Ld 3x3 QFN Tape and Reel
ISL6608IBZ (Note) -40 to 85 8 Ld SOIC
ISL6608IBZ-T (Note) 8 Ld SOIC Tape and Reel (Lead-Free)
ISL6608IRZ (Note) -40 to 85 8 Ld 3x3 QFN
ISL6608IRZ-T (Note) 8 Ld 3x3 QFN Tape and Reel (Lead-Free)
NOTE: Intersil Lead-Free products employ special lead-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which is compatible with both SnPb and lead-free soldering operations. Intersil Lead-Free products are MSL classified at lead-free peak reflow temperatures that meet or exceed the lead-free requirements of IPC/JEDEC J Std-020B.
ISL6608CR (3X3 QFN)
(°C) PACKAGE
(Lead-Free)
(Lead-Free)
TOP VIEW
PKG.
DWG. #
M8.15
L8.3x3
UGATE
BOOT
PWM
GND
1
2
3
4
8
7
6
5
PHASE
FCCM
VCC
LGATE
BOOT
PWM
UGATE
PHASE
7
8
1
2
GND
6
FCCM
6
VCC
5
43
LGATE
2
Block Diagram
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ISL6608
ISL6608
VCC
FCCM
PWM
10K
CONTROL
LOGIC
SHOOT-
THROUGH
PROTECTION
VCC
THERMAL PAD (FOR QFN PACKAGE ONLY)
BOOT
UGATE
PHASE
LGATE
GND
Typical Application - Multi-Phase Converter Using ISL6608 Gate Drivers
V
BAT
+5V
+5V
PGOOD
VID
+5V
FB
VSEN
CONTROL
VCC
MAIN
COMP
PWM1
PWM2
FCCM
ISEN1
ISEN2
VCC
FCCM
PWM
THERMAL PAD
+5V
DRIVE
ISL6608
BOOT
UGATE
PHASE
LGATE
V
BAT
+V
CORE
FS
DACOUT
GND
VCC
FCCM
PWM
THERMAL PAD
DRIVE
ISL6608
BOOT
UGATE
PHASE
LGATE
3
ISL6608
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ti
Absolute Maximum Ratings Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
BOOT Voltage (V Phase Voltage (V
Input Voltage (V
UGATE. . . . . . . . . . . . . . . . . . . . . . V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to 125°C
). . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 22V
BOOT PHASE
, V
DE
) (Note 1). . . V
). . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
PWM
PHASE
BOOT
- 0.3V to V
- 7V to V
BOOT
BOOT
+ 0.3V
+ 0.3V
Thermal Resistance (Typical, Notes 2, 3, 4) θ
SOIC Package (Note 2) . . . . . . . . . . . . 110 n/a
QFN Package (Notes 3, 4). . . . . . . . . . 82 16
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range. . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125°C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The Phase Voltage is capable of withstanding -7V when the BOOT pin is at GND.
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. θ
JA
3. θ
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
JA
Tech Brief TB379.
4. For θ
5. Guaranteed by design, not tested.
, the “case temp” location is the center of the exposed metal pad on the package underside.
JC
(°C/W) θJC (°C/W)
JA
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Bias Supply Current I
POWER-ON RESET (POR)
VCC Rising - 3.40 4.00 V
VCC Falling T
Hysteresis - 500 - mV
BOOTSTRAP DIODE
Forward Voltage V
PWM INPUT
Input Current I
PWM Three-State Rising Threshold V
PWM Three-State Falling Threshold V
Three-State Shutdown Holdoff Time t
FORCED CONTINUOUS CONDUCTION MODE (FCCM) INPUT
FCCM LOW Threshold 0.50 - - V
FCCM HIGH Threshold T
VCC
PWM
TSSHD
PWM Pin Floating, V
A
T
A
V
F
V
V
V
V
V
V
A
T
A
VCC
PWM
PWM
VCC
VCC
VCC
VCC
VCC
VCC
= 0°C to 70°C 2.40 2.90 - V
= -40°C to 85°C 2.175 2.90 - V
= 5V, IF = 2mA 0.40 0.52 0.62 V
= 5V - 250 - µA
= 0V - -250 - µA
= 5V 0.80 1.00 1.20 V
= 5V, TA = 0°C to 70°C 3.40 3.65 3.90 V
= 5V, TA = -40°C to 85°C 3.05 3.65 4.10 V
= 5.5V - - 4.55 V
= 5V, TA = 0°C to 70°C 100 160 250 ns
= 5V, TA = -40°C to 85°C 80 160 250 ns
= 0°C to 70°C - - 2.00 V
= -40°C to 85°C - - 2.05 V
= 5V - 80 - µA
VCC
4
ISL6608
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Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
SWITCHING TIME
V
UGATE Rise Time t
LGATE Rise Time t
UGATE Fall Time t
LGATE Fall Time t
UGATE Turn-Off Propagation Delay t
LGATE Turn-Off Propagation Delay t
UGATE Turn-On Propagation Delay t
LGATE Turn-On Propagation Delay t
UG/LG Three-state Propagation Delay t
Minimum LG On TIME in DCM (Note 5) t
OUTPUT
Upper Drive Source Resistance R
Upper Driver Source Current (Note 5) I
Upper Drive Sink Resistance R
Upper Driver Sink Current (Note 5) I
Lower Drive Source Resistance R
Lower Driver Source Current (Note 5) I
Lower Drive Sink Resistance R
Lower Driver Sink Current (Note 5) I
PDLU
PDLL
PDHU
PDHL
LGMIN
RU
RL
FU
FL
PTS
- 400 - ns
U
U
U
U
L
L
L
L
= 5V, 3nF Load - 8.0 - ns
VCC
V
= 5V, 3nF Load - 8.0 - ns
VCC
V
= 5V, 3nF Load - 8.0 - ns
VCC
V
= 5V, 3nF Load - 4.0 - ns
VCC
V
= 5V, Outputs Unloaded - 35 - ns
VCC
V
= 5V, Outputs Unloaded - 35 - ns
VCC
V
= 5V, Outputs Unloaded - 20 - ns
VCC
V
= 5V, Outputs Unloaded - 20 - ns
VCC
V
= 5V, Outputs Unloaded - 35 - ns
VCC
250mA Source Current - 1 2.5
V
UGATE-PHASE
250mA Sink Current - 1 2.5
V
UGATE-PHASE
250mA Source Current - 1 2.5
V
LGATE
250mA Sink Current - 0.5 1.0
V
LGATE
= 2.5V - 2.00 - A
= 2.5V - 2.00 - A
= 2.5V - 2.00 - A
= 2.5V - 4.00 - A
Functional Pin Description
UGATE (Pin 1 for SOIC-8, Pin 8 for QFN)
The UGATE pin is the upper gate drive output. Connect to the gate of high-side power N-Channel MOSFET.
BOOT (Pin 2 for SOIC-8, Pin 1 for QFN)
BOOT is the floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the PHASE pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See the Bootstrap Diode and Capacitor section under DESCRIPTION for guidance in choosing the appropriate capacitor value.
PWM (Pin 3 for SOIC-8, Pin 2 for QFN)
The PWM signal is the control input for the driver. The PWM signal can enter three distinct states during operation, see the three-state PWM Input section under DESCRIPTION for further details. Connect this pin to the PWM output of the controller.
GND (Pin 4 for SOIC-8, Pin 3 for QFN)
GND is the ground pin for the IC.
LGATE (Pin 5 for SOIC-8, Pin 4 for QFN)
LGATE is the lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET.
VCC (Pin 6 for SOIC-8, Pin 5 for QFN)
Connect the VCC pin to a +5V bias supply. Place a high quality bypass capacitor from this pin to GND.
FCCM (Pin 7 for SOIC-8, Pin 6 for QFN)
The FCCM pin enables or disables Diode Emulation. When FCCM is LOW, diode emulation is allowed. Otherwise, continuous conduction mode is forced (FCCM= Forced Continuous Conduction Mode). See the Diode Emulation section under DESCRIPTION for more detail.
PHASE (Pin 8 for SOIC-8, Pin 7 for QFN)
Connect the PHASE pin to the source of the upper MOSFET and the drain of the lower MOSFET. This pin provides a return path for the upper gate driver.
Thermal Pad (in QFN only)
The PCB “thermal land” design for this exposed die pad should include thermal vias that drop down and connect to one or more buried copper plane(s). This combination of vias for vertical heat escape and buried planes for heat spreading allows the QFN to achieve its full thermal potential. This pad should be grounded. Refer to TB389 for design guidelines.
5
ISL6608
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Description
Theory of Operation
Designed for speed, the ISL6608 dual MOSFET driver controls both high-side and low-side N-Channel FETs from one externally provided PWM signal.
A rising edge on PWM initiates the turn-off of the lower MOSFET (see Figure 1, Timing Diagram). After a short propagation delay [t Typical fall times [t Specifications section. Adaptive shoot-through circuitry monitors the LGATE voltage. When LGATE has fallen below 1V, UGATE is allowed to turn ON. This prevents both the lower and upper MOSFETs from conducting simultaneously, or shoot-through.
A falling transition on PWM indicates the turn-off of the upper MOSFET and the turn-on of the lower MOSFET. A short
PWM
], the lower gate begins to fall.
PDLL
] are provided in the Electrical
FL
t
PDHU
t
PDLU
2.5V
propagation delay [t gate begins to fall [t
] is encountered before the upper
PDLU
]. The upper MOSFET gate-to-source
FU
voltage is monitored, and the lower gate is allowed to rise after the upper MOSFET gate-to-source voltage drops below 1V. The lower gate then rises [t
], turning on the lower
RL
MOSFET.
This driver is optimized for converters with large step down compared to the upper MOSFET because the lower MOSFET conducts for a much longer time in a switching period. The lower gate driver is therefore sized much larger to meet this application requirement.
The 0.5 on-resistance and 4A sink current capability enable the lower gate driver to absorb the current injected to the lower gate through the drain-to-gate capacitor of the lower MOSFET and prevent a shoot through caused by the high dv/dt of the phase node.
t
TSSHD
UGATE
LGATE
t
PDLL
t
RU
1V
t
FL
t
FU
1V
t
RL
t
PDHL
FIGURE 1. TIMING DIAGRAM
t
FL
t
t
TSSHD
PTS
t
RU
t
FU
t
PTS
6
ISL6608
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Typical Performance Waveforms
FIGURE 2. LOAD TRANSIENT (0 to 30A, 3-PHASE) FIGURE 3. LOAD TRANSIENT (30 to 0A, 3-PHASE)
FIGURE 4. DCM TO CCM TRANSITION AT NO LOAD FIGURE 5. CCM TO DCM TRANSITION AT NO LOAD
INDUCTOR CURRENT
VOUT
FIGURE 6. PRE-BIASED STARTUP IN CCM MODE (FCCM = HI) FIGURE 7. PRE-BIASED STARTUP IN DCM MODE (FCCM = LO)
7
INDUCTOR CURRENT
VOUT
ISL6608
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Diode Emulation
Diode emulation allows for higher converter efficiency under light-load situations. With diode emulation active (FCCM = LO), the ISL6608 will detect the zero current crossing of the output inductor and turn off LGATE. This ensures that discontinuous conduction mode (DCM) is achieved. This prevents the low side MOSFET from sinking current, and no negative spike at the output is generated during pre-biased startup (See Figure 7 on page 7). The LGATE has a minimum ON time of 400ns in DCM mode. Diode emulation is asynchronous to the PWM signal. Therefore, the ISL6608 responds to the FCCM input immediately after it changes state. Refer to Figures 2 to 7 on page 7 for details.
Intersil does not recommend Diode Emulation used with the r
DS(ON)
of the freewheeling MOSFET current sensing topology. The turn-OFF of the low side MOSFET forces the forward current going through the body diode of the MOSFET. If the current sampling circuit of the controller is activated during the body diode conduction, a diode voltage drop, instead of a much smaller MOSFET’s r
DS(ON)
voltage drop, is sampled. This will falsely trigger the over current protection function of the controller.
The ISL6608 works with DCR, upper MOSFET, or power resistor current sensing topologies to start up from pre­biased load with no problem.
Three-State PWM Input
A unique feature of the ISL6608 and other Intersil drivers is the addition of a shutdown window to the PWM input. If the PWM signal enters and remains within the shutdown window for a set holdoff time (typically 160ns), the output drivers are disabled and both MOSFET gates are pulled and held low. The shutdown state is removed when the PWM signal moves outside the shutdown window. Otherwise, the PWM rising and falling thresholds outlined in the ELECTRICAL SPECIFICATIONS determine when the lower and upper gates are enabled.
Adaptive Shoot-Through Protection
Both drivers incorporate adaptive shoot-through protection to prevent upper and lower MOSFETs from conducting simultaneously and shorting the input supply. This is accomplished by ensuring the falling gate has turned off one MOSFET before the other is allowed to turn on.
During turn-off of the lower MOSFET, the LGATE voltage is monitored until it reaches a 1V threshold, at which time the UGATE is released to rise. Adaptive shoot-through circuitry monitors the upper MOSFET gate-to-source voltage during UGATE turn-off. Once the upper MOSFET gate-to-source voltage has dropped below a threshold of 1V, the LGATE is allowed to rise.
Internal Bootstrap Diode
This driver features an internal bootstrap Schottky diode. Simply adding an external capacitor across the BOOT and PHASE pins completes the bootstrap circuit. The bootstrap capacitor must have a maximum voltage rating above VCC + 5V and its capacitance value can be chosen from the following equation:
Q
GATE
C
BOOT
Q
where Q at V control MOSFETs. The ∆V allowable droop in the rail of the upper drive. The previous relationship is illustrated in Figure 8.
As an example, suppose an upper MOSFET has a gate charge, Q the drive voltage over a PWM cycle is 200mV. One will find that a bootstrap capacitance of at least 0.125µF is required. The next larger standard value capacitance is 0.15µF. A good quality ceramic capacitor is recommended.
------------------------
V
BOOT
QG1VCC
-------------------------------
GATE
GS1
(µF)
BOOT_CAP
C
FIGURE 8. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE
V
is the amount of gate charge per upper MOSFET
G1
gate-source voltage and NQ1 is the number of
GATE
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 20nC
0.0
=
N
GS1
Q1
term is defined as the
BOOT
, of 65nC at 5V and also assume the droop in
Q
= 100nC
GATE
5
0
n
C
0.30.0 0.1 0.2 0.4 0.5 0.6 0.90.7 0.8 1.0
VOLTAGE
V
BOOT_CAP
(V)
8
ISL6608
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Power Dissipation
Package power dissipation is mainly a function of the switching frequency and total gate charge of the selected MOSFETs. Calculating the power dissipation in the driver for a desired application is critical to ensuring safe operation. Exceeding the maximum allowable power dissipation level will push the IC beyond the maximum recommended
operating junction temperature of 125°C. The maximum
allowable IC power dissipation for the SO-8 package is approximately 800mW. When designing the driver into an application, it is recommended that the following calculation
be performed to ensure safe operation at the desired frequency for the selected MOSFETs. The power dissipated by the driver is approximated as below and plotted as in Figure 9.
Pf
where f and V and Q
MOSFET selection and any external capacitance added to
the gate pins. The I of the driver and is typically negligible.
1.5V
QUVLQ
sw
sw
represent the upper and lower gate rail voltage. QU
L
are the upper and lower gate charge determined by
L
+()I
U
L
is the switching frequency of the PWM signal. VU
DDQ VCC
V
+=
DDQ
CC
product is the quiescent power
Layout Consideration
For heat spreading, place copper underneath the IC whether it has an exposed pad or not. The copper area can be extended beyond the bottom area of the IC and/or connected to buried copper plane(s) with thermal vias. This combination of vias for vertical heat escape, extended copper plane, and buried planes for heat spreading allows the IC to achieve its full thermal potential.
Place each channel power component as close to each other as possible to reduce PCB copper losses and PCB parasitics: shortest distance between DRAINs of upper FETs and SOURCEs of lower FETs; shortest distance between DRAINs of lower FETs and the power ground. Thus, smaller amplitudes of positive and negative ringing are on the switching edges of the PHASE node. However, some space in between power components is required for good airflow. The gate traces from the drivers to the FETs should be kept short and wide to reduce the inductance of the traces and promote clean drive signals.
1000
POWER (mW)
QU=100nC Q
900
800 700
600
500
400
300 200
100
=200nC
L
0
0 200 400 600 800 1000 1200 1400 1600 1800 2000
FIGURE 9. POWER DISSIPATION vs FREQUENCY
QU=50nC
=100nC
Q
L
FREQUENCY (kHz)
QU=50nC
=50nC
Q
L
QU=20nC
=50nC
Q
L
9
ISL6608
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Quad Flat No-Lead Plastic Package (QFN) Micro Lead Frame Plastic Package (MLFP)
L8.3x3
8 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-220VEEC ISSUE C)
MILLIMETERS
SYMBOL
A 0.80 0.90 1.00 -
A1 - - 0.05 -
A2 - - 1.00 9
A3 0.20 REF 9
b 0.23 0.28 0.38 5, 8
D 3.00 BSC -
D1 2.75 BSC 9
D2 0.25 1.10 1.25 7, 8
E 3.00 BSC -
E1 2.75 BSC 9
E2 0.25 1.10 1.25 7, 8
e 0.65 BSC -
k0.25 - -
L 0.35 0.60 0.75 8
L1 - - 0.15 10
N82
Nd 2 3
Ne 2 3
P- -0.609
θ --129
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
2. N is the number of terminals.
3. Nd and Ne refer to the number of terminals on each D and E.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip.
6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature.
7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance.
8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389.
9. Features and dimensions A2, A3, D1, E1, P & θ are present when Anvil singulation method is used and not present for saw singulation.
10. Depending on the method of lead termination at the edge of the package, a maximum 0.15mm pull back (L1) maybe present. L minus L1 to be equal to or greater than 0.3mm.
NOTESMIN NOMINAL MAX
Rev. 1 10/02
10
Small Outline Plastic Packages (SOIC)
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ISL6608
N
INDEX AREA
123
-A­D
e
B
0.25(0.010) C AM BS
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Inter­lead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact.
E
-B-
SEATING PLANE
A
-C-
M
0.25(0.010) BM M
H
α
µ
A1
0.10(0.004)
L
h x 45
o
C
M8.15 (JEDEC MS-012-AA ISSUE C)
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
INCHES MILLIMETERS
SYMBOL
A 0.0 532 0.0688 1.35 1.75 -
A1 0.0040 0.0098 0.10 0.25 -
B 0.013 0.020 0.33 0.51 9 C 0.0075 0.0098 0.19 0.25 ­D 0.1890 0.1968 4.80 5.00 3 E 0.1 497 0.1574 3.80 4.00 4
e 0.050 BSC 1.27 BSC -
H 0.2284 0.2440 5.80 6.20 ­h 0.0099 0.0196 0.25 0.50 5 L 0.016 0.050 0.40 1.27 6
N8 87
o
α
0
o
8
o
0
o
8
Rev. 0 12/93
NOTESMIN MAX MIN MAX
-
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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