intersil ISL6608 DATA SHEET

®
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ISL6608
Data Sheet March 2004 FN9140.1
Synchronous Rectified MOSFET Driver with Pre-Biased Load Startup Capability
The ISL6608 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous­rectified buck converter topology. This driver combined with an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V) and minimizes gate drive losses due to MOSFET gate charge at high switching frequency applications. Each driver is capable of driving a 3000pF load with a low propagation delay and less than 10ns transition time. This product implements bootstrapping on the upper gate with an internal bootstrap Schottky diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
The ISL6608 features 4A sink current for the lower gate driver, which is capable of holding the lower MOSFET gate during the Phase node rising edge to prevent shoot-through power loss caused by the high dv/dt of the Phase node.
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Adaptive Shoot-Through Protection
•0.5Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency up to 2MHz
- Fast Output Rise/Fall Time and Low Propagation Delay
• Three-State PWM Input for Power Stage Shutdown
• Internal Bootstrap Schottky Diode
• Low Bias Supply Current (5V, 80µA)
• Diode Emulation for Enhanced Light Load Efficiency and Pre-Biased Startup Applications
• VCC POR (Power-On-Reset) Feature Integrated
• Low Three-State Shutdown Holdoff Time (Typically 160ns)
• Pin-to-Pin Compatible with ISL6605
• QFN Package:
- Compliant to JEDEC PUB95 MO-220
QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package footprint, which improves
PCB efficiency and has a thinner profile
• Pb-free Available as an Option
The ISL6608 also features a Three-State PWM input which, working together with Intersil multi-phase PWM controllers, will prevent a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is usually seen in a microprocessor power system for protecting the microprocessor from reversed output voltage events.
A diode emulation feature is integrated in the ISL6608 to enhance converter efficiency at light load conditions. Diode emulation also prevents a negative transient when starting up with a pre-biased voltage on the output. When diode emulation is enabled, the driver allows discontinuous conduction mode by detecting when the inductor current reaches zero and subsequently turns off the low side MOSFET, which prevents the output from sinking current and producing a negative transient on a pre-biased output (see Figures 6 and 7 on page 7).
Applications
• Core Voltage Supplies for FPGAs and PowerPC Microprocessors
• Point-Of-Load Modules with Pre-Biased Start-Up Requirements
• High Frequency and High Current DC-DC Converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices”
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
All other trademarks mentioned are the property of their respective owners.
Copyright © Intersil Americas Inc. 2004. All Rights Reserved
ISL6608
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Ordering Information
TEMP RANGE
PART NUMBER
ISL6608CB 0 to 70 8 Ld SOIC M8.15
ISL6608CB-T 8 Ld SOIC Tape and Reel
ISL6608CR 0 to 70 8 Ld 3x3 QFN L8.3x3
ISL6608CR-T 8 Ld 3x3 QFN Tape and Reel
ISL6608CBZ (Note) 0 to 70 8 Ld SOIC
ISL6608CBZ-T 8 Ld SOIC Tape and Reel (Lead-Free)
ISL6608CRZ (Note) 0 to 70 8 Ld 3x3 QFN
ISL6608CRZ-T 8 Ld 3x3 QFN Tape and Reel (Lead-Free)
ISL6608IB -40 to 85 8 Ld SOIC M8.15
ISL6608IB-T 8 Ld SOIC Tape and Reel
ISL6608IR -40 to 85 8 Ld 3x3 QFN L8.3x3
(°C) PACKAGE
(Lead-Free)
(Lead-Free)
PKG.
DWG. #
M8.15
L8.3x3
Pinouts
ISL6608CB (SOIC)
TOP VIEW
Ordering Information (Continued)
TEMP RANGE
PART NUMBER
ISL6608IR-T 8 Ld 3x3 QFN Tape and Reel
ISL6608IBZ (Note) -40 to 85 8 Ld SOIC
ISL6608IBZ-T (Note) 8 Ld SOIC Tape and Reel (Lead-Free)
ISL6608IRZ (Note) -40 to 85 8 Ld 3x3 QFN
ISL6608IRZ-T (Note) 8 Ld 3x3 QFN Tape and Reel (Lead-Free)
NOTE: Intersil Lead-Free products employ special lead-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which is compatible with both SnPb and lead-free soldering operations. Intersil Lead-Free products are MSL classified at lead-free peak reflow temperatures that meet or exceed the lead-free requirements of IPC/JEDEC J Std-020B.
ISL6608CR (3X3 QFN)
(°C) PACKAGE
(Lead-Free)
(Lead-Free)
TOP VIEW
PKG.
DWG. #
M8.15
L8.3x3
UGATE
BOOT
PWM
GND
1
2
3
4
8
7
6
5
PHASE
FCCM
VCC
LGATE
BOOT
PWM
UGATE
PHASE
7
8
1
2
GND
6
FCCM
6
VCC
5
43
LGATE
2
Block Diagram
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ISL6608
ISL6608
VCC
FCCM
PWM
10K
CONTROL
LOGIC
SHOOT-
THROUGH
PROTECTION
VCC
THERMAL PAD (FOR QFN PACKAGE ONLY)
BOOT
UGATE
PHASE
LGATE
GND
Typical Application - Multi-Phase Converter Using ISL6608 Gate Drivers
V
BAT
+5V
+5V
PGOOD
VID
+5V
FB
VSEN
CONTROL
VCC
MAIN
COMP
PWM1
PWM2
FCCM
ISEN1
ISEN2
VCC
FCCM
PWM
THERMAL PAD
+5V
DRIVE
ISL6608
BOOT
UGATE
PHASE
LGATE
V
BAT
+V
CORE
FS
DACOUT
GND
VCC
FCCM
PWM
THERMAL PAD
DRIVE
ISL6608
BOOT
UGATE
PHASE
LGATE
3
ISL6608
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ti
Absolute Maximum Ratings Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
BOOT Voltage (V Phase Voltage (V
Input Voltage (V
UGATE. . . . . . . . . . . . . . . . . . . . . . V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . -40°C to 125°C
). . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 22V
BOOT PHASE
, V
DE
) (Note 1). . . V
). . . . . . . . . . . . . . . -0.3V to VCC + 0.3V
PWM
PHASE
BOOT
- 0.3V to V
- 7V to V
BOOT
BOOT
+ 0.3V
+ 0.3V
Thermal Resistance (Typical, Notes 2, 3, 4) θ
SOIC Package (Note 2) . . . . . . . . . . . . 110 n/a
QFN Package (Notes 3, 4). . . . . . . . . . 82 16
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range. . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300°C
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Ambient Temperature Range . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . . 125°C
Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V ±10%
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The Phase Voltage is capable of withstanding -7V when the BOOT pin is at GND.
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. θ
JA
3. θ
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
JA
Tech Brief TB379.
4. For θ
5. Guaranteed by design, not tested.
, the “case temp” location is the center of the exposed metal pad on the package underside.
JC
(°C/W) θJC (°C/W)
JA
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Bias Supply Current I
POWER-ON RESET (POR)
VCC Rising - 3.40 4.00 V
VCC Falling T
Hysteresis - 500 - mV
BOOTSTRAP DIODE
Forward Voltage V
PWM INPUT
Input Current I
PWM Three-State Rising Threshold V
PWM Three-State Falling Threshold V
Three-State Shutdown Holdoff Time t
FORCED CONTINUOUS CONDUCTION MODE (FCCM) INPUT
FCCM LOW Threshold 0.50 - - V
FCCM HIGH Threshold T
VCC
PWM
TSSHD
PWM Pin Floating, V
A
T
A
V
F
V
V
V
V
V
V
A
T
A
VCC
PWM
PWM
VCC
VCC
VCC
VCC
VCC
VCC
= 0°C to 70°C 2.40 2.90 - V
= -40°C to 85°C 2.175 2.90 - V
= 5V, IF = 2mA 0.40 0.52 0.62 V
= 5V - 250 - µA
= 0V - -250 - µA
= 5V 0.80 1.00 1.20 V
= 5V, TA = 0°C to 70°C 3.40 3.65 3.90 V
= 5V, TA = -40°C to 85°C 3.05 3.65 4.10 V
= 5.5V - - 4.55 V
= 5V, TA = 0°C to 70°C 100 160 250 ns
= 5V, TA = -40°C to 85°C 80 160 250 ns
= 0°C to 70°C - - 2.00 V
= -40°C to 85°C - - 2.05 V
= 5V - 80 - µA
VCC
4
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