®
ISL6594D
Data Sheet December 3, 2007
Advanced Synchronous Rectified Buck
MOSFET Drivers with Protection Features
The ISL6594D is high frequency MOSFET driver specifically
designed to drive upper and lower power N-Channel
MOSFETs in a synchronous rectified buck converter
topology. This driver combined with the ISL6594D Digital
Multi-Phase Buck PWM controller and N-Channel MOSFET s
forms a complete core-voltage regulator solution for
advanced microprocessors.
The ISL6594D drives both upper and lower gates over a range
of 4.5V to 13.2V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs between
gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. The ISL6594D includes an overvoltage protection
feature operational before VCC exceeds its turn-on
threshold, at which the PHASE node is connected to the
gate of the low side MOSFET (LGATE). The output voltage
of the converter is then limited by the threshold of the low
side MOSFET, which provides some protection to the
microprocessor if the upper MOSFET(s) is shorted.
The ISL6594D also features an input that recognizes a
high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the
controlled output voltage when operation is suspended. This
feature eliminates the need for the Schottky diode that may
be utilized in a power system to protect the load from
negative output voltage damage.
Ordering Information
PART NUMBER
(Note)
ISL6594DCBZ 6594 DCBZ 0 to +85 8 Ld SOIC M8.15
ISL6594DCBZ-T* 6594 DCBZ 0 to +85 8 Ld SOIC
ISL6594DCRZ 94DZ 0 to +85 10 Ld 3x3 DFN L10.3x3
ISL6594DCRZ-T* 94DZ 0 to +85 10 Ld 3x3 DFN
*Please refer to TB347 for details on reel specifications.
NOTE: These Intersil Pb-free plastic packaged products employ
special Pb-free material sets; molding compounds/die attach
materials and 100% matte tin plate PLUS ANNEAL - e3 termination
finish, which is RoHS compliant and compatible with both SnPb and
Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the
Pb-free requirements of IPC/JEDEC J STD-020.
PART
MARKING
TEMP.
RANGE (°C)
PA CKAGE
(Pb-free)
Tape and Reel
Tape and Reel
PKG.
DWG. #
M8.15
L10.3x3
FN9282.1
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Pin-to-pin Compatible with ISL6596
• Advanced Adaptive Zero Shoot-Through Protection
- Body Diode Detection
- Auto-zero of r
• Adjustable Gate Voltage for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
• Optimized for 3.3V PWM Input
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat
Sinking
• Dual Flat No-Lead (DFN) Package
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)
Conduction Offset Effect
DS(ON)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Technical Brief TB389 “PCB Land Pattern Design and
Surface Mount Guidelines for QFN (MLFP) Packages”
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
| Intersil (and design) is a registered trademark of Intersil Americas Inc.
All other trademarks mentioned are the property of their respective owners.
Copyright Intersil Americas Inc. 2006, 2007. All Rights Reserved
ISL6594D
Pinouts
UGATE
BOOT
PWM
GND
Block Diagram
ISL6594DCB
(8 LD SOIC)
TOP VIEW
1
2
3
4
VCC
PWM
+5V
13.6k
6.4k
8
PHASE
7
PVCC
VCC
6
LGATE
5
UVCC
Pre-POR OVP
FEATURES
POR/
CONTROL
LOGIC
ISL6594D
SHOOT-
THROUGH
PROTECTION
UGATE
(LVCC)
BOOT
N/C
PWM
GND
ISL6594DCR
(10 LD 3x3 DFN)
TOP VIEW
1
2
GND
3
4
5
BOOT
UGATE
PHASE
PVCC
UVCC = PVCC FOR ISL6594D
LGATE
10
9
8
7
6
PHASE
PVCC
N/C
VCC
LGATE
PAD
GND
FOR DFN DEVICES, THE PAD ON THE BOTTOM SIDE OF
THE PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.
2
FN9282.1
December 3, 2007
Typical Application - 4 Channel Converter Using ISL6592 and ISL6594D Gate Drivers
+12V
+5V
3
+3.3V
VDD
ISL6592
VID4
VID3
VID2
VID1
FROM µP
TO µP
FAULT
OUTPUTS
2
C I/F
December 3, 2007
FN9282.1
I
BUS
VID0
VID5
LL0
LL1
OUTEN
VCC_PWRGD
RESET_N
FAULT1
FAULT2
SDA
SCL
SADDR
V12_SEN
GND
OUT1
OUT2
ISEN1
OUT3
OUT4
ISEN2
OUT5
OUT6
ISEN3
OUT7
OUT8
ISEN4
OUT9
OUT10
ISEN5
ISEN5
OUT11
OUT12
ISEN6
TEMP_SEN
CAL_CUR_EN
CAL_CUR_SEN
VSENP
VSENN
1
UGATE
2
BOOT
3
PWM
4
GND
1
UGATE
2
BOOT
3
PWM
4
GND
1
UGATE
2
BOOT
3
PWM
4
GND
1
UGATE
2
BOOT
3
PWM
4
GND
ISL6594D
PHASE
PVCC
LGATE
ISL6594D
PHASE
PVCC
LGATE
ISL6594D
PHASE
PVCC
LGATE
ISL6594D
PHASE
PVCC
LGATE
VCC
VCC
VCC
VCC
8
7
6
5
8
7
6
5
ISL6594D
Vout
8
7
6
5
RTN
8
7
6
5
RTHERM
ISL6594D
Absolute Maximum Ratings Thermal Information
Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V
Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V
BOOT Voltage (V
Input Voltage (V
UGATE. . . . . . . . . . . . . . . . . . . V
V
BOOT-GND
PWM
- 3.5V (<100ns Pulse Width, 2µJ) to V
PHASE
LGATE. . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
GND - 5V (<100ns Pulse Width, 2µJ) to V
PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3V
GND - 8V (<400ns, 20µJ) to 30V (<200ns, V
ESD Rating
). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V
) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V
PHASE
- 0.3VDC to V
to V
DC
BOOT-GND
BOOT
BOOT
PVCC
PVCC
to 15V
DC
+ 0.3V
+ 0.3V
+ 0.3V
+ 0.3V
DC
<36V))
Human Body Model . . . . . . . . . . . . . . . . . . . .Class I JEDEC STD
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
Thermal Resistance θ
SOIC Package (Note 1) . . . . . . . . . . . . 100 N/A
DFN Package (Notes 2, 3). . . . . . . . . . 48 7
Maximum Junction Temperature (Plastic Package) . . . . . . . +150°C
Maximum Storage Temperature Range. . . . . . . . . .-65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Ambient Temperature Range. . . . . . . . . . . . . . . . . . . . 0°C to +85°C
Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C
Supply Voltage, V
Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . 5V to 12V ±10%
. . . . . . . . . . . . . . . . . . . . . . . . . . 6.8V to 13.2V
CC
NOTES:
is measured with the component mounted on a high effective thermal conductivity test board in free air.
1. θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
2. θ
JA
Tech Brief TB379.
3. For θ
, the “case temp” location is the center of the exposed metal pad on the package underside.
JC
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted.
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Bias Supply Current I
Gate Drive Bias Current I
VCC
I
VCC
PVCC
I
PVCC
POWER-ON RESET AND ENABLE
VCC Rising Threshold 6.1 6.4 6.7 V
VCC Falling Threshold 4.7 5.0 5.3 V
PWM INPUT (See Timing Diagram on page 6)
Input Current I
PWM
PWM Rising Threshold (Note 4) V
PWM Falling Threshold (Note 4) V
Typical Three-State Shutdown Window V
Three-State Lower Gate Falling Threshold V
Three-State Lower Gate Rising Threshold V
Three-State Upper Gate Rising Threshold V
Three-State Upper Gate Falling Threshold V
Shutdown Hold-off Time t
UGATE Rise Time (Note 4) t
LGATE Rise Time (Note 4) t
UGATE Fall Time (Note 4) t
LGATE Fall Time (Note 4) t
UGATE Turn-On Propagation Delay (Note 4) t
TSSHD
RU
RL
FU
FL
PDHU
ISL6594D, f
ISL6594D, f
ISL6594D, f
ISL6594D, f
V
= 3.3V - 400 - µA
PWM
V
= 0V - -350 - µA
PWM
= 12V - 1.70 - V
CC
= 12V - 1.30 - V
CC
= 12V 1.23 - 1.82 V
CC
= 12V - 1.18 - V
CC
= 12V - 0.76 - V
CC
= 12V - 2.36 - V
CC
= 12V - 1.96 - V
CC
V
= 12V, 3nF Load, 10% to 90% - 26 - ns
PVCC
V
= 12V, 3nF Load, 10% to 90% - 18 - ns
PVCC
V
= 12V, 3nF Load, 90% to 10% - 18 - ns
PVCC
V
= 12V, 3nF Load, 90% to 10% - 12 - ns
PVCC
V
= 12V, 3nF Load, Adaptive - 10 - ns
PVCC
= 300kHz, V
PWM
= 1MHz, V
PWM
= 300kHz, V
PWM
= 1MHz, V
PWM
= 12V - 4.5 - mA
VCC
= 12V - 5 - mA
VCC
= 12V - 7.5 - mA
PVCC
= 12V - 8.5 - mA
PVCC
- 245 - ns
(°C/W) θJC (°C/W)
JA
4
FN9282.1
December 3, 2007