intersil ISL6523A DATA SHEET

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TM
ISL6523A
Data Sheet February 2002
VRM8.5 Dual PWM and Dual Linear Power System Controller
The ISL6523A provides the powe r control and prote ct ion for four output voltages in high-performance microprocessor and computer applications. The IC integrates two PWM controllers and two linear controllers, as well as the monitoring and protection functions into a 28-pin SOIC package. One PWM con trol ler regu late s th e m ic ropro ce ssor core voltage with a synchronous-rectified buck converter. The second PWM con t rol le r supplies the computer system’s AGTL+ 1.2V bus power with a standard buck converter. The linear controllers regulate power for the 1.5V AGP bus and the 1.8V power for the chipset core voltage and/or cache memory circuits.
The ISL6523A includes an Intel VRM8.5 compatible, TTL 5-input digital-to-a nalog converter (DAC) that adjusts the microprocessor core-targeted PWM output voltage from
1.050V to 1.825V in 25mV steps. The precision reference and voltage-mode control provid e ±1% stati c regu lation . The second PWM controller’s output provides a voltage level of
1.2V with ±3% accuracy. The linear regulators use external N-channel MOSFETs or bipolar NPN pass transistors to provide fixed o utput volt ages of 1. 5V ±3% (V ±3% (V
OUT4
).
OUT3
) and 1.8V
The ISL6523A monitors all the output voltages. A delayed­rising VTT (standard buck output) Power Good signal is issued before the core PWM starts to ramp up. Another system Power Good signal is issued when the core is within ±10% of the DAC setting and all other outputs are above their under- voltage levels. Additional built-in overvoltage protection for the core output uses the lower MOSFET to prevent output vol tages above 115% of the DAC setting. Th e PWM controllers’ overcurrent function monitors the output current by using the voltage drop across the upper MOSFET’s r
, eliminating the need for a current
DS(ON)
sensing resistor.
Ordering Information
PART NUMBER
ISL6523ACB 0 to 70 28 Ld SOIC M28.3 ISL6523EVAL1 Evaluation Board
TEMP.
RANGE (oC) PACKAGE
PKG.
NO.
FN9063
Features
• Provides 4 Regulated Voltages
- Microprocessor Core, AGTL+ Bus, AGP Bus Power, and North/South Bridge Core
• Drives N-Channel MOSFETs
• Linear Regulator Drives Compatible with both MOSFET and Bipolar Series Pass Transistors
• Simple Single-Loop Control Designs
- Voltage-Mode PWM Control
• Fast PWM Converter Transient Response
- High-Bandwidth Error Amplifiers
- Full 0% to 100% Duty Ratios
• Excellent Output Voltage Regulation
- Core PWM Output . . . . . . . . . . ±1% Over T em perature
- All Other Outputs . . . . . . . . . . . . .±3% Over Temperature
• VRM8.5 TTL-Compatible 5-Bit DAC Microprocessor Core Output Voltage Selection
- Wide Range . . . . . . . . . . . . . . . . . . . . 1.050V to 1.825V
• Power-Good Output Voltage Monitors
- Separate delayed VTT Power Good
• Overcurrent Fault Monitors
- Switching Regulators Do Not Require Extra Current
Sensing Elements, Use MOSFET’s r
DS(ON)
• Small Converter Size
- Constant Frequency Opera tio n
- 200kHz Internal Oscillator
Applications
Motherboard Power Regulation for Computers
Pinout
ISL6523A (SOIC)
TOP VIEW
VCC
UGATE2 PHASE2
VID3 VID2 VID1 VID0
VID25
PGOOD
VTTPG
OCSET2
VSEN2
SS24 SS13
VSEN4
1 2 3 4 5 6 7 8
9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
UGATE1 PHASE1 LGATE1 PGND OCSET1 VSEN1 FB1 COMP1 VSEN3 DRIVE3 GND VAUX DRIVE4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright © Intersil Americas Inc. 2002. All Rights Reserved
ISL6523A
VCC
OCSET1
VSEN1
POWER-ON
VAUX
RESET (POR)
PGOOD
200µA
-
+
1.10
x
-
+
0.90
x
-
+
1.15
x
VCC
DRIVE1
UGATE1
+
OC1
PHASE1
-
LGATE1
VCC
GATE
CONTROL
PWM1
PWM
COMP1
-
+
EA1
-
+
DRIVE
SYNCH
PGND
GND
TTL D/A
CONVERTER
DACOUT
28µA
(DAC)
VID25
VID0
VID1
VID3 VID2
COMP1
FB1
4.5V
OV
SS24
200µA
OCSET2
UV3
UV4
-
-
+
+
OC2
+
-
-
+
VSEN3
VAUX
1.5V
-
+
EA3
x0.75
x0.75
+
1.8V
-
+
-
EA4
DRIVE2
VCC
PWM
INHIBIT
SOFT-
LOGIC
START
& FAULT
FAULT
COMP2
+
-
PWM2
GATE
CONTROL
VCC
EA2
-
+
UV2
-
28µA
+
SET
1.2V
x0.90
+
4.5V
FIGURE 1. BLOCK DIAGRAM
SS13
OSCILLATOR
>
D
CLK
CLR
Q
Q
VTTPG
-
DRIVE3
2
DRIVE4
VSEN4
UGATE2
PHASE2
VSEN2
+5V
+12V
ISL6523A
IN
+3.3V
V
OUT2
1.2V
+5V
Q1
V
OUT1
V
OUT2
Q3
PWM2
CONTROLLER
PWM1
CONTROLLER
Q2
ISL6523A
IN
V
OUT3
Q4
LINEAR
CONTROLLER
LINEAR
CONTROLLER
Q5
V
OUT4
FIGURE 2. SIMPLIFIED POWER SYSTEM DIAGRAM
IN
IN
L
IN
C
IN
VCC
OCSET1
PGOOD
UGATE1 PHASE1
Q1
L
OUT1
POWERGOOD
V
OUT1
1.3V to 3.5V
C
OUT2
L
OUT2
CR2
Q3
OCSET2
UGATE2 PHASE2
VTT POWERGOOD
+3.3V
IN
V
OUT3
1.5V C
OUT3
V
OUT4
1.8V C
OUT4
Q5
Q4
C
VSEN2
VTTPG
ISL6523A
VAUX
DRIVE3
VSEN3
DRIVE4
VSEN4
SS24
SS24
FIGURE 3. TYPICAL APPLICATION
GND
LGATE1 PGND
VSEN1
FB1
COMP1
VID3 VID2 VID1
VID0 VID25
SS13
C
SS13
Q2
C
OUT1
3
ISL6523A
Absolute Maximum Ratings Thermal Information
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+15V
PGOOD, RT/FA ULT, DRIVE, PHASE, and
GAT E Voltage. . . . . . . . . . . . . . . . . . . GND - 0.3V to V
Input, Output or I/O Voltage. . . . . . . . . . . . . . . . . . G ND -0.3V to 7V
CC
+ 0.3V
ESD Classification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Resistance (Typical, Note 1)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
Maximum Storage Temperature Range. . . . . . . . . . -65
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . .300
(SOIC - Lead Tips Only)
Recommended Operating Conditions
Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . +12V ±10%
Ambient Tem perature Range. . . . . . . . . . . . . . . . . . . . 0
Junction Temper ature Range. . . . . . . . . . . . . . . . . . . 0
CAUTION: Stresses above those li sted in “Abs olute Maxi mum Ratings” may cause perman ent damag e to the device. T his is a stress on ly rating an d operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
1. θ
JA
o
C to 70oC
o
C to 125oC
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
VCC SUPPLY CURRENT
Nominal Supply Current I
CC
POWER-ON RESET
Rising VCC Threshold - - 10.4 V Falling VCC Threshold 8.2 - - V Rising VAUX Threshold -2.5- V VAUX Threshold Hysteresis -0.5- V Rising V
Threshold -1.26- V
OCSET1
OSCILLATOR
Free Running Frequency F Ramp Amplitude ∆V
OSC
OSC
DAC AND STANDARD BUCK REGULATOR REFERENCE
DAC (VID25-VID3) Input Low Voltage --0.8V DAC (VID25-VID3) Input High Voltage 2.0 - - V DACOUT Voltage Accuracy -1.0 - +1.0 % PWM2 Regulation Voltage -1.2- V PWM2 Regulation Voltage Tolerance -3- %
1.5V AND 1.8V LINEAR REGULATORS (V
OUT3
AND V
Regulation Tolerance -3- % VSEN3 Regulation Voltage VREG VSEN4 Regulation Voltage VREG VSEN3,4 Under-Voltage Level VSEN3,4 VSEN3 Under-Voltage Hysteresis VSEN3 Falling - 7 - % Output Drive Current VAUX-V
SYNCHRONOUS PWM CONTROLLER ERROR AMPLIFIER
DC Gain Note 2 - 88 - dB Gain-Bandwidth Product GBWP Note 2 - 15 - MHz Slew Rate SR COMP1 = 10pF, Note 2 - 6 - V/µs
PWM CONTROLLERS GATE DRIVERS
UGATE1,2 Source I UGATE1,2 Sink R
UGATE
UGATEVGATE-PHASE
UGATE1, LGATE1, UGATE2, DRIVE3, and
-9- mA
DRIVE4 Open
185 200 215 kHz
-1.9- V
)
OUT4
3 4
VSEN3,4 Rising - 75 - %
UV
DRIVE3,4
VCC = 12V, V
> 0.6V 20 40 - mA
UGATE1
(or V
) = 6V - 1 - A
UGATE2
-1.5- V
-1.8- V
= 1V - 1.7 3.5
θ
(oC/W)
JA
o
C to 150oC
P-P
o
C
o
C
4
0
ISL6523A
Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. Refer to Figures 1, 2 and 3 (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
LGATE Source I LGATE Sink R
PROTECTION
VSEN1 Over-Voltage (VSEN1/DACOUT) VSEN1 Rising - 120 - % OCSET1,2 Current Source I Soft-Start Current I
POWER GOOD
VSEN1 Upper Threshold (VSEN1/DACOUT)
VSEN1 Under-Voltage (VSEN1/DACOUT)
VSEN1 Hysteresis (VSEN1/D AC O UT ) VSEN1 Falling - 2 - % PGOOD Voltage Low V VSEN2 Under-Voltage VSEN2 Rising - 1.00 - V VSEN2 Hysteresis VSEN2 Falling - 60 - mV VTTPG Voltage Low V
NOTE:
2. Guaranteed by design
LGATE
LGATE
OCSET
SS13,24VSS13,24
PGOODIPGOOD
VTTPGIVTTPG
VCC = 12V, V V
= 1V - 1.4 3.0
LGATE
V
VSEN1 Rising 108 - 110 %
VSEN1 Rising 92 - 94 %
= 4.5V
OCSET
= 2.0V
= -4mA - - 0.8 V
= -4mA - - 0.8 V
= 1V - 1 - A
LGATE1
DC
DC
170 200 230 µA
-28- µA
Typical Performance Curve
140
C
= C
UGATE1
= 5V
V
IN
120
VCC = 12V
100
80
(mA)
CC
60
I
40
20
0
100 200 300 400 500 600 700 800 900 100
FIGURE 4. BIAS SUPPLY CURRENT vs FREQUENCY
= C
UGATE2
SWITCHING FREQUENCY (kHz)
LGATE1
= C
C = 4800pF
C = 3600pF
C = 1500pF
C = 660pF
Functional Pin Descriptions VCC (Pin 28)
Provide a 12V bi as s upp ly fo r t he IC t o this pin. This pin also provides the gate bias charge for all the MOSFETs controlled by the IC. The voltage at this pin is monitored for Power-On Reset (POR) purposes.
GND (Pin 17)
Signal ground for the IC. All voltage levels are measured with respect to this pin.
PGND (Pin 24)
This is the power ground connection. Tie the synchronous PWM converter’s lower MOSFET source to this pin.
VAUX (Pin 16)
Connect this pin t o the ATX 3.3V output. The voltage present at this pin is monitored for sequencing purposes. This pin provides the necessary base bias for the NPN pass transistors, as well as the current sunk through the 5k VID pull-up resistors.
SS13 (Pin 13)
Connect a capacitor from this pin to ground. This capacitor, along with an internal 28µA current source, sets the soft-start interval of the sync hronous sw itching con verter (V the AGP regulator (V
). A VTTPG high signal is also
OUT3
OUT1
) and
delayed by the time interval required by the charging of this capacitor from 0V to 1.25V (see Soft-Start details).
SS24 (Pin 12)
Connect a capacitor from this pin to ground. This capacitor, along with an internal 28µA current source, sets the soft-start interval of the st andard buck co nverter. Pulling this pin below
0.8V induces a chip reset (POR) and shutdown.
VTTPG (Pin 9)
VTTPG is an open collector output used to indicate the status of the st andard buck regul ator output volt age. This pin is pulled low when the output is below the under-voltage threshold or when the SS13 pin is below 1.25V.
5
ISL6523A
PGOOD (Pin 8)
PGOOD is an open collector output used to indicate the status of the output voltages. Th is pi n i s p ul led low when the synchronous regulator output is not within
±10% of the
DACOUT reference vol tage or w hen any of the other o utputs is below its under-voltage threshold.
VID3, VID2, VID1, VID0, VID25 (Pins 3-7)
VID3-25 are the TTL-compatible input pins to the 5-bit DAC. The logic states of these five pins program the internal voltage reference (D ACOUT). The leve l of DACOUT set s the microprocessor core converter output voltage (V
OUT1
), as well as the corresponding PGOOD and OVP thresholds. Each VID pin is connected to the VAUX pin through a 5k pull-up resistor.
OCSET1, OCSET2 (Pins 23, 10)
Connect a resistor (R drain of the corresponding upper MOSFET. R internal 200µA current source (I MOSFET’s on-resistance (r current (OC) trip point according to the following equation:
I
PEAK
I
----------------------------------------------------=
×
OCSETROCSET
r
DS ON()
An overcurrent trip cycles the soft-start function. The voltage at OCSET1 pin is monitored for power-on reset
(POR) purposes.
) from one of these pins to the
OCSET
), and the upper
OCSET
) set the converter over-
DS(ON)
OCSET
, an
PHASE1, PHASE2 (Pins 26, 2)
Connect the PHASE pins to the respective PWM converter’s upper MOSFET sources. These pins represent the gate drive return current p ath and a re used to monitor the volt age drop across the upper MOSFETs for overcurrent protection.
UGATE1, UGATE2 (Pins 27, 1)
Connect UGATE pins to the respective PWM converters’ upper MOSFET gate. These pins provide the gate drive for the upper MOSFETs.
LGATE1 (Pin 25)
Connect LGATE1 to the synchronous PWM converter’s lower MOSFET gate. Th is p in pro vid es th e gat e d riv e for the lower MOSFET.
COMP1 and FB1 (Pins 20, 21)
COMP1 and FB1 are the available external pins of the synchronous PWM regulator error amplifier. The FB1 pin is the inverting input of the error amplifier. Similarly, the COMP1 pin is the error am plifier output. Th ese pins are us ed to compensate the voltage-mode control feedback loop of the synchronous PWM converter.
VSEN1 (Pin 22)
This pin is connected to the synchronous PWM converters’ output voltage. The PGOOD and OVP comparator circuits use this signal to report output voltage status.
VSEN2 (Pin 11)
Connect this pin to the output of the standard buck PWM regulator. The voltage at this pin is regulated to a 1.5 V le ve l. This pin is also monitored for under-voltage events.
DRIVE3 (Pin 18)
Connect this pin to the gate/base of a N-type external pass transistor (MOSFET or bipolar). This pin provides the drive for the 1.5V regulator’s pass transistor.
VSEN3 (Pin 19)
Connect this pin to the output of the 1.5V linear regulator. This pin is monitored for undervoltage events.
DRIVE4 (Pin 15)
Connect this pin t o t he ba se of an external b ip ola r tra ns istor. This pin provides the drive for the 1.8V regulator’s pass transistor.
VSEN4 (Pin 14)
Connect this pin to the output of the linear 1.8V regulator. This pin is monitored for undervoltage events.
Description
Operation
The ISL6523A monitors and precisely controls 4 output voltage levels (Refer to Figures 1, 2, 3). It is designed for microprocessor computer applications with 3.3V , 5V, and 12V bias input from an ATX power supply. The IC has 2 PWM and two linear controllers. The first PWM controller (PWM1) is designed to regulate the microprocessor core voltage (V PWM1 controller drives 2 MOSFETs (Q1 and Q2) in a synchronous-rectified buck converter and regulates the core voltage to a level programmed by the 5-bit digital-to-analog converter (DAC). The second PWM controller (PWM2) is designed to regulate the AGTL+ bus voltage (V
OUT2
controller drives a MOSFET (Q3) in a standard buck converter and regulates the output voltage to a level of 1.2V. The two linear controllers supply the 1.5V advanced graphics port (AGP) bus power (V (V
).
OUT4
) and the 1.8V chipset core power
OUT3
Initialization
The ISL6523A automatically initializes in ATX-based systems upon receipt of input power. The Power-On Reset (POR) function continually monitors the input supply voltages. The POR monitors the bias vol tage (+1 2V VCC pin, the 5V input voltage (+5V and the 3.3V input voltage (+3.3V normal level on OCSET1 is equal to +5V voltage drop (se e o ver cu rrent pro tec tio n). The POR function initiates soft-start operation after all supply voltages exceed their POR thresholds.
) at the OCSET1 pin,
IN
) at the VAUX pin. The
IN
less a fixed
IN
OUT1
). PWM2
) at the
IN
).
6
ISL6523A
Soft-Start
The 1.8V supply designed to power the chipset (OUT4), cannot lag the ATX 3.3V by more than 2V , at any time. To meet this special requirement, the linear block controlling this output operates independently of the chip’s power-on reset. Thus, DRIVE4 is driven to raise the OUT4 voltage before the input supplies reach their POR levels. As seen in Figure 5, at time T0 the power is turned on and the input supplies ramp up. Immediately following, OUT4 is also ramped up, lagging the ATX 3.3V by about 1.8V. At time T1, the POR function initiates the SS24 soft-start sequence. Initially, the voltage on the SS24 pin rapidly increases to approximately 1V (this minimizes the soft-start interval). Then, an internal 28µA current source charges an external capacitor (C about 4.5V. As the SS24 voltage increases, the PWM2 error amplifier allows generation of PHASE pulses of increasing width that charge the output capacitor(s), providing a smooth transition to the final set voltage. The OUT4 reference (clamped to SS24) increasing past the intermediary level, established based on the ATX 3.3V presence at the VAUX pin, brings the output in regulation soon after T2.
ATX 12V
10V
ATX 5V
SS24
0V
3.0V
ATX 3.3V
V
OUT4
(1.8V)
) on the SS24 pin to
SS24
VTTPG
SS13
PGOOD
V
OUT1
(1.65V)
As the SS13 pin voltage increases, the pulse-width on the PHASE1 pin increases, bringing the OUT1 output within regulation limits. Similarly, the SS13 voltage clamps the reference voltage for OUT3, enabling a controlled output voltage ramp-up. At time T4, all output voltages are within power-good limits, situation reported by the PGOOD pin going high.
The T2 to T3 time interval is dependent upon the value of C
. The same capacitor is also responsible for the ramp-
SS13
up time of the OUT1 and OUT3 voltages. If selecting a different capacitor then recommend ed in the circuit application literature, consider the effects the dif f erent value will hav e on the ramp-up time and inrush currents of the OUT1 and OUT3 outputs.
Fault Protection
All four outputs a re monitored a nd protected ag ainst extr eme overload. The chip’s response to an output overload is selective, depending on the faulting output.
An overvoltage on V 1, 2, and 3, and latches the IC off. An under-voltage on V
output latches the IC off. A single overcurrent event
OUT4
on outputs 1 or 2, or an under-voltage event on output 3, increments the respective fault counter and triggers a shutdown of outputs 1, 2, and 3, followed by a soft-start re­start. After three consecutive fault events on either counter, the chip is latched of f. Removal of bi as power resets both the fault latch and the counters. Both counters are also reset by a successful start -up of all the out puts.
UV3
OC1
SS13
SS13UP
4V
output (VSEN1) disables outputs
OUT1
OC
LATCH
SRQ
>
COUNTER
R
INHIBIT1,2,3
SSDOWN
V
(1.2V)
OUT2
V
(1.5V)
OUT3
0V
T1 T2 T4T0 T5
FIGURE 5. SOFT-START INTERVAL
T3
TIME
As OUT2 increases past the 90% power-good level, the second soft-start (SS13) is released. Between T2 and T3, the SS13 pin voltage ramps from 0V to the valley of the oscillator’s triangle wave (at 1.25V). Contingent upon OUT2 remaining above 1.08V, the first PWM pulse on PHASE1 triggers the VTTPG pin to go high. The oscillator’s triangular wave form is compared to the clamped error amplifier output voltage.
7
0.8V
SS24
SS24UP
4V
OV
UV4
OC2
FIGURE 6. FAULT LOGIC - SIMPLIFIED SCHEMATIC
POR
SRQ
OC
LATCH
COUNTER
FAULT LATCH
S
Q
Q
R
R
>
FAULT
Figure 6 shows a simplified schematic of t he fault logic. The overcurrent latches are set depend ent upon the st ates of the overcurrent (OC1 and OC2), output 3 under-voltage (UV3)
I
ISL6523A
and the soft-start signals (SS13, SS24). Window comparators monitor the SS pins and indicate when the respective C
pins are fully charged to above 4.0V (UP
SS
signals). An under-volta ge on eith er linea r output (VSEN3 or VSEN4) is ignored until the respective UP signal goes high. This allows V
OUT3
and V
to increase without fault at
OUT4
start-up. Followi ng an overcurrent event (O C1, OC2, or UV3 event), bringing the SS24 pin below 0.8V resets the overcurrent latch and generates a soft-started ramp-up of the outputs 1, 2, and 3.
OUT1 Overvoltage Protection
During operation, a short across the synchronous PWM upper MOSFET (Q1) causes V
to increase. When the
OUT1
output exceeds the over-voltage threshold of 120% of DACOUT, the over-voltage comparator trips to set the fault latch and turns the lower MOSFET (Q2) on as needed to regulate the output voltage to the 120% threshold. This operation typically results in the blow of the input fuse, subsequent discharge of V
OUT1
.
A separate over-voltage circuit provides protection during the initial application of power. For voltages on the VCC pin below the power-on reset (and above ~4V), the output level is monitored for voltage s above 1.3V. Should VSEN1 exceed this level, the lower MOSFET, Q2, is driven on.
Overcurrent Protection
All outputs are protected against excessive overcurrents. Both PWM controllers use the upper MOSFET’s on­resistance, r against shorted outputs. Both linear regulators monitor their respective VSEN pins for under-voltage to protect against excessive current s.
Figure 7 illustrates the overcurrent protec tion with an overload on OUT2. The overload is applied at T0 and the current increases through the inductor (L comparator trips when the voltage acros s Q3 (i exceeds the level programmed by R outputs 1, 2, and 3, discharges s oft-start cap acitor C 28µA current sink, and increments the counter. Soft-start capacitor C
SS13
and initiates a soft-st art cycle with th e error amplifiers clamped by soft-start. With OUT2 still overloaded, the inductor current increases to trip the overcurrent comparator. Again, this inhibits the outputs, but the soft-st art vol tage continues increasing to above 4.0V before discharging. The counter increments to 2. The soft-start cyc le repeats at T3 and trips the overcurrent comparator. The SS pin voltage increases to above 4.0V at T4 and the counter increments to 3. This sets the fault latch to disable the converter.
The PWM1 controller oper ates in the same way as PWM2 to overcurrent faults. Additionally, the two linear controllers monitor the VSEN pins for under-voltage. Should excessive currents cause VSEN3 or VSEN4 to fall below the linear under-voltage threshold, the respective UV signals set the
to monitor the current for protection
DS(ON)
). At time T1, the OC2
OUT2
OCSET
is quickly discharged. C
SS24
r
D
DS(ON)
. This inhibits
SS24
recharges at T2
)
with
OC latch or the FAULT latch, providing respective C
SS
capacitors are fully charged. Blanking the UV signals during the C
charge interval allows the linear outputs to build above
SS
the under-voltage threshold during normal ope ration. Cycling the bias input power off then on resets the counter and the fault latch.
CHIP
1
FAULT
LATCH
0
4V
2V
SS13
SS24
0V
0A
INDUCTOR CURRENT
Resistors (R
COUNT
= 1
OVERLOAD
APPLIED
T1 T2 T3T0 T4
FIGURE 7. OVERCURRENT OPERATION
OCSET1
and R
DISABLED
COUNT
= 2
TIME
OCSET2
COUNT
= 3
) program the overcurrent trip levels for each PWM converter. As shown in Figure 8, the internal 200µA current sink (I R
OCSET (VSET
) that is referenced to VIN. The DRIVE signal
) develops a voltage across
OCSET
enables the overcurrent comparator (OVERCURRENT1 or OVERCURRENT2). When the voltage across the upper MOSFET (V comparator trips to set the overcurrent latch. Both V V
are referenced to VIN and a small capacitor across
DS
R
OCSET
helps V
DS(ON)
OCSET
) exceeds V
, the overcurrent
SET
track the variations of VIN due to
SET
and
MOSFET switching. The overcurrent function will trip at a peak inductor current (I
I
OCSETROCSET
=
PEAK
----------------------------------------------------
r
DS ON()
determined by:
PEAK)
×
The OC trip point varies with MOSFET’s rDS(ON) temperature variation s. To avoid overcurrent tripping in the normal operating load range, determine the ROCSET resistor value from the equation above with:
1. The maximum r
2. The minimum I
3. Determine I
PEAK
at the highest junction temperature
DS(ON)
from the specification table
OCSET
for I
PEAK
> I
OUT(MAX)
+ (∆I) /2,
where I is the outp ut indu ctor rip ple cur rent .
For an equation for the ripple current see the section under component guidelin es t itl ed ‘Out put Induct or Se le cti on’.
8
ISL6523A
OVERCURRENT TRIP:
VDSV
>
iDr
× I
DS ON()
OVER-
CURRENT
OC
+
-
PWM
CONTROL
FIGURE 8. OVERCURRENT DETECTION
SET
×>
OCSETROCSET
OCSET
I
OCSET
200µA
DRIVE
GATE
R
OCSET
V
VCC
UGATE
PHASE
V
PHASEVINVDS
V
OCSETVINVSET
SET
+
VIN = +5V
i
D
+
V
DS
=
=
OUT1 Voltage Program
The output voltage of the PWM1 converter is programmed to discrete levels between 1.050V and 1.825V. This output (OUT1) is designed to supply the core voltage of Intel’ s advanced microprocessors. The voltage identification (VID) pins program an internal voltage reference (DACOUT) with a TTL-compatible 5-bit digital-to-analog converter (DAC). The level of DACOUT also sets the PGOOD and OVP thresholds. Table 1 specifies the DACOUT voltage for the different combinations of connections on the VID pins. The VID pins can be left open for a logic 1 input, since they are internally pulled to the V A UX pin thro ugh 5k res istors. C hanging the VID inputs during operation is not recommended and could toggle the PGOOD signal and exercise the overvolt age protection. The output voltage program is Intel VRM8.5 compatible.
TABLE 1. OUT1 OUTPUT VOLTAGE PROGRAM
PIN NAME NOMINAL
010001.050
010001.050
010011.075
001101.100
001111.125
001001.150
001011.175
000101.200
000111.225
000001.250
000011.275
111101.300
111111.325
111001.350
111011.375
110101.400
110111.425
DACOUT
VOLTAGEVID3 VID2 VID1 VID0 VID25
TABLE 1. OUT1 OUTPUT VOLTAGE PROGRAM (Continued)
PIN NAME NOMINAL
110001.450
110011.475
101101.500
101111.525
101001.550
101011.575
100101.600
100111.625
100001.650
100011.675
011101.700
011111.725
011001.750
011011.775
010101.800
010111.825
NOTE: 0 = connected to GND, 1 = open or connected to 3.3V through pull-up resistors
DACOUT
VOLTAGEVID3 VID2 VID1 VID0 VID25
Application Guidelines
Soft-Start Interval
Initially, the soft-st art function clamps the error amplifier’s output of the PWM converters. This generates PHASE pulses of increasing width that charge the output capacitor(s). The resulting output voltages start-up as shown in Figure 5.
The soft-start functio n contro ls the ou tput vo ltag e rat e of rise to limit the current surge at start-up. The soft-start interval and the surge current are programmed by the soft-start capacitor, C increases the peak surge current. Using the recommended
0.1µF soft start capacitors ensure all output voltages ramp up to their set v al ues i n a q uic k an d c on trol led fashion, while meeting the system timing requirements.
Shutdown
Neither PWM output switches until the soft-start voltage (V
) exceeds the oscillator’s valley voltage. Additionally,
SS
the reference on each linear’s amplifier is clamped to the soft-start voltage. Holding the SS24 pin low (with an open drain or open collecto r signa l) turns off regulat ors 1, 2 a nd 3. Regulator 4 (MCH) will simply drop its output to the intermediate soft-start level. This output is not allowed to violate the 2V maximum potential gap to the ATX 3.3V output.
. Programming a faster soft-start interval
SS
9
ISL6523A
Layout Considerations
MOSFETs switch very fast and efficiently. The speed with which the current transitions from one device to another causes voltage spikes across the interconnecting impedances and parasitic circuit elements. The voltage spikes can degrade efficiency, radiate noise into the circuit, and lead to device overvoltage stress. Careful component layout and printed circuit desig n min im ize s the vol t ag e spikes in the c onverter. Consider, a s an exam ple, th e turn-of f transition of the upper MOSFET. Prior to turn-off, the upper MOSFET was carrying the full load current. During the turn­off, current stop s flowing in the uppe r MOSFET and is picked up by the lower MOSFET or Schottky diode. Any inductance in the switched current path generates a large voltage spike during the switching interval. Careful component selection, tight layout of the c ritica l comp onent s, an d short , wide circu it traces minimize the magnitude of voltage spikes.
There are two sets of critical components in a DC-DC converter using an ISL6523A controller. The switching power component s are the mo st crit ical b ecaus e they sw itch large amounts of e nergy, and as such, they tend to generate equally large amounts of noise. The critical small signal components are those connected to sensitive nodes or those supplying critical bypass current.
The power components and the controller IC should be placed first. Locate the input capacitors, especially the high­frequency ceramic de-coupling capacitors, clos e to the power switches. Locate the output inductor and output capacitors between the MOSFETs and the load. Locate the PWM controller close to the MOSFETs.
The critical small signal components include the bypass capacitor fo r VCC and the soft-start capacitor, C these components close to their connecting pins on the control IC. Minimize any leakage current paths from any SS node, since the internal current source is only 28µA.
A multi-layer printed circuit board is recommend ed. F igu re 9 shows the connections of the critical components in the converter. Note that the capacitors C
and C
IN
could represent numero us physica l capacit ors. Dedicate o ne solid layer for a ground plane and make all critical component ground connections with vias to this layer. Dedicate another so lid la yer as a po wer plane an d break thi s plane into smaller islands of common voltage levels. The power plane should support the input power and output power nodes. Use copper filled polygons on the top and bottom circuit layers for the PHASE nodes, but do not unnecessarily oversize these particular islands. Since the PHASE nodes are subjected to very high dV /dt volt age s, the stray capacitor formed between these islands and the surrounding circui try will te nd to co uple sw itch ing noi se. Us e
OUT
. Locate
SS
each
the remaining printed circuit layers for small signal wiring. The wiring traces from the control IC to the MOSFET gate and source should be sized to carry 2A peak currents.
L
IN
LOAD
OUT3
LOAD
+3.3V
IN
C
IN
+12V
C
C
OCSET2
R
OCSET2
Q3
L
OUT2
C
CR2
OUT2
C
SS24,13
C
OUT3
Q4
IN
KEY
ISLAND ON POWER PLANE LAYER ISLAND ON CIRCUIT PLANE LAYER VIA/THROUGH-HO LE CONN EC TIO N TO GROU ND PLAN E
VCC
OCSET2
UGATE2
PHASE2
SS24
SS13
ISL6523A
DRIVE3
PGND
GNDVCC
OCSET1
UGATE1
PHASE1
LGATE1
DRIVE4
C
OCSET1
Q2
Q5
R
OCSET1
Q1
L
OUT1
CR1
C
C
OUT1
OUT4
V
V
OUT4
OUT1
LOAD
LOAD
+5V
V
OUT2
V
FIGURE 9. PRINTED CIRCUIT BOARD POWER PLANES AND
ISLANDS
PWM1 Controller Feedback Compensation
Both PWM controllers use voltage-mode control for output regulation. This section highlights the design consideration for a voltage-mode controller requiring external compensation. Apply these methods and considerations only to the synchrono us PWM control ler. The considerations for the standard PWM controller are presented separately.
Figure 10 highlights the voltage-mode control loop for a synchronous-rectified buck converter. The output voltage (V
) is regulated to the Reference voltage level. The
OUT
reference voltage level is the DAC output voltage (DACOUT) for PWM1. The error amplifier output (V the oscillator (OSC) triangular wave to provide a pulse-width modulated wave with an amplitude of V The PWM wave is smoothed by the output filter (L
The modulator transfer function is the small-signal transfer function of V
OUT/VE/A
Gain, given by V
. This function is dominated by a DC
IN/VOSC
, and shaped by the output filter , with
a double pole break frequency at F
) is compared with
E/A
at the PHASE node.
IN
and a zero at F
LC
and CO)..
O
ESR
.
10
F
1
F
1
N
P
L
ISL6523A
V
IN
L
O
PHASE
(PARASITIC)
IN
Z
FB
Z
IN
C3
R1
FB
R3
C
ESR
V
O
OUT
V
OUT
V
OSC
OSC
PWM
COMP
­+
Z
V
E/A
FB
-
+
ERROR AMP
DETAILED COMPENSATION COMPONENTS
COMP
ISL6523A
DRIVER
DRIVER
REFERENCE
C2
C1
R2
-
+
DACOUT
Z
FIGURE 10. VOLT AGE-MODE BUCK CONVERTER
COMPENSATION DESIGN
Modulator Break Frequency Equations
F
LC
2π L
××
OCO
F
ESR
1
----------------------------------------=
The compensation network consists of the error amplifier (internal to the ISL6523A) and the impedance networks Z and Z
. The goal of the compensation network is to provide a
FB
closed loop transfer function with high 0dB crossing frequency (f
) and adequate phase margin. Phase margin is the
0dB
difference between the closed loop phase at f The equations below relate the compensation network’s poles, zeros and gain to the components (R1, R2, R3, C1, C2, and C3) in Figure 10. Use these guidelines for locating the poles and zeros of the compensation network:
1. Pick Gain (R2/R1) for desired converter bandwidth
2. Place 1
3. Place 2
4. Place 1
5. Place 2
ST
Zero Below Filter’s Double Pole (~75% FLC)
ND
Zero at Filter’s Double Pole
ST
Pole at the ESR Zero
ND
Pole at Half the Switching Frequency
6. Check Gain against Error Amplifier’s Open-Loop Gain
7. Estimate Phase Margin - Repeat if Necessary
1
-----------------------------------------=
2π ESR C
and 180o.
0dB
××
O
IN
Compensation Break Frequency Equations
-------------------------------------------------------=
Z1
Z2
-----------------------------------=
2π R× 2C1×
-------------------------------------------------------=
2π R1 R3+()C3××
1
F
P1
2π R
F
-----------------------------------=
P2
2π R× 3C3×
C1 C2×

----------------------
××
2

C1 C2+
1
Figure 11 shows an asymptotic plot of the DC-DC converter’s gain vs. frequency. The actual Modulator Gain has a high gain peak dependent on the quality factor (Q) of the output filter, which is not shown in Figure 11. Using the above guidelines should yield a Compensation Gain similar to the curve plotted. The open loop error amplifier gain bounds the compensation gain. Check the compensation gain at F
with the capabilities
P2
of the error amplifier. The Closed Loop Gain is constructed on the log-log graph of Figure 11 by adding the Modulator Gain (in dB) to the Compensation Gain (in dB). This is equivalent to multiplying the modulator transfer function to the compensation transfer function and plotting the gain.
OPEN LOOP
ERROR AMP GAIN
V

IN
----------------- -
log
20

V

PP
COMPENSATION
GAIN
CLOSED LOO
GAIN
10M1M100K10K1K10010
100
GAIN (dB)
-20
-40
-60
80
60
40
20
0
F
Z1
R2

------- -
log
20

R1
MODULATOR
GAIN
F
Z2
F
LCFESR
FREQUENCY (Hz)
F
F
P1
P2
FIGURE 11. ASYMPTOTIC BODE PLOT OF CONVERTER GAI
The compensation gain uses external impedance networks Z
and ZIN to provide a stab le, high bandwid th (BW) overal l
FB
loop. A stable control loop has a gain crossing with
-20dB/decade slope and a phase margin greater than 45 degrees. Include worst case component variations when determining phase margin.
PWM2 Controller Feedback Compensation
To reduce the number of external small-signal components required by a typical application, the standard PWM controller is internally stabilized. The only stability criteria that needs to be m et relates the mini mum value o f the outpu t inductor to the equivalent ESR of the output capacitor bank, as shown in the following equation:
1.75
10
×
OUT MIN()
ESR
------------------------------------------------=
OUT
2 π× BW×
where L
OUT(MIN)
current
- minimum output inductor value at full output
11
ISL6523A
ESR
- equivalent ESR of the output capacitor bank
OUT
BW - desired converter bandwidth (not to exceed 0.25 to
0.30 of the switching frequency) The design procedure for this output should follow the
following steps:
1. Choose number and type of output capacitors to me et the output transient requirements based on the dynamic loading characteristics of the output.
2. Determine the equiv alent ESR of the o utput cap acitor bank and calculate minimum output inductor value.
3. Verify that chosen inductor meets this minimum value criteria (at full output load). It is recommended the chosen output inductor be no more than 30% saturated at full output load.
Oscillator Synchronization
The PWM controllers use a triangle wave for comparison with the error amplifi er output to provide a pulse-width modulated signal. Should the output voltage of the two converters be programmed close to each other, then cross­talk between the converters could cause non-uniform PHASE pulse-widths and increased output voltage ripple. The ISL6523A avoids this pro blem by synchronizing th e two converters 180
o
out of phase.
Component Selection Guidelines
Output Capacitor Selection
The output capacitors for each output have unique requirements. In general the output capacitors should be selected to meet the dynamic regulation requirements. Additionally , the PWM converters require an output c apacitor to filter the current ripple. The load transient for the microprocessor core requires high quality capacitors to supply the high slew rate (di/dt) current demands.
PWM Output Capacitors
Modern microprocessors pr oduce tr ans ient lo ad r ates above 1A/ns. High frequency capacitors initially supply the transient current and slo w the load r at e-of -chan ge see n by the bulk capacitors. The bul k fil ter capaci to r value s ar e generally determ ine d by th e ES R (e ffect ive seri es resistance) and voltage ra ti ng req uir e ments ra th er tha n actual capacitance requirem ents.
edge. An aluminum electrolytic capacitor’s ESR value is related to the case size with lower ESR available in larger case sizes. However, the equivalent series inductance (ESL) of these capacitors increases with case size and can reduce the usefulness of the capacitor to high slew-rate transient loading. Unfortunately , ESL is not a spec ified parameter . W ork with your capacitor supplier and measure the capa citor’s impedance with frequency to select a suitable comp onent. In most cases, multiple electrolytic capac itors of sm all cas e size perform better than a single large case capacitor.
Linear Output Capacitors
The output capacitors for the linear regulators provide dynamic load current. Thus capacitors C
OUT3
and C
OUT4
should be selected for transient loa d regul ati on.
PWM Output Inductor Selection
Each PWM converter requires an outpu t inductor . The output inductor is selected to meet the output voltage ripple requirements and sets the converter’s response time to a load transient. Additionally, PWM2 output inductor has to meet the minimum value criteria for loop stability as described in paragrap h ‘PWM2 Controller Feedback Compensation’. The inductor value determines the converter’s ripple current and the ripp le vo ltage is a function of the ripple current. The ripple voltage and current are approximated by the followi ng equ ati ons :
V
INVOUT
------------------------------- -
I
F
S
Increasing the value of induct ance re duces th e ripple c urrent and voltage. However, large inductance values increase the converter’s response time to a load transient.
One of the parameters limiting the converter’s response to a load transient is the time required to change the inductor current. Given a sufficiently fast cont rol loop desig n, the ISL6523A will provide either 0% or 100% duty cycle in response to a load transient. The response time is the time interval required to slew the inductor current from an initial current value to the post-transient current level. During this interval the difference between the inductor current and the transient current level must be supplied by the output capacitor(s). Minimizing the response time can m inimi ze the output capacitance required.
V
OUT
--------------- -×=
L×
V
IN
I ESR×=
V
OUT
High frequency decoupling capacitors should be placed as close to the power pins of the load as phy sically possible. Be careful not to add inductance in the circuit board wiring that could cancel the usefulness of these low inductance components. Consult with the manufacturer of the load on specific decoupling requirements.
Use only specialized low-ESR capacitors intended for switching-regulator applications for the bulk capacitors. The bulk capacitor’s ESR determines the output ripple v oltage and the initial voltage drop following a high slew-rate transient’ s
12
The response time to a transient is different for the application of load and the removal of load. The following equations give the approximate response time interval for application and removal of a transient load:
t
RISE
where: I
TRAN
response time to the application of load, and t
LOI
×
TRAN
------------------------------- -= –
V
INVOUT
t
FALL
LOI
×
-------------------------------=
V
OUT
is the transient load current step, t
FALL
TRAN
RISE
is the
is the
response time to the removal of load. Be sure to check both
ISL6523A
of these equations at the minimum and maximum output levels for the worst case response time.
Input Capacitor Selection
The important pa rameters for the bulk input capacitor are the voltage rating and the RMS current rating. For reliable operation, select bulk input capacitors with voltage and current ratings above the maxim um input voltag e and largest RMS current required by the circuit. The capacitor voltage rating should be at least 1.25 times greater than the maximum input voltage. The maximum RMS current rating requirement for the input capacitors of a buck regulator is approximately 1/2 of t he DC outp ut load curren t. W orst -case RMS current draw in a circuit employing the ISL6523A amounts to the larges t RMS cu rren t dr aw of ei the r sw itchi ng regulator (likely the RMS of V
). Operating at 180o out-
OUT1
of-phase, the input-side RMS current of both switchers is less than the arithmetical sum of individual RMS input currents.
Use a mix of input bypass capacitors to control the voltage overshoot across the MOSFETs. Use ceramic capacitance for the high frequency decoupling and bulk capacitors to supply the RMS current. Smal l ceramic capacitors can be placed very close to the upper MOSFET to suppress the voltage induced in the parasitic circuit impedances.
For a through-hole design, several electrolytic capacitors (Panasonic HFQ series or Nichicon PL series or Sanyo MV-GX or equivalent) may be needed. For surface mount designs, solid tantalum capacitors can be used, but caution must be exercised w ith re gard to th e ca p ac it or s urg e cu rrent rating. These capacitors must be capable of handling the surge current at power-up. The TPS series available from AVX, and the 593D series from Sprague are both surge current tested.
MOSFET Selection/Considerations
The ISL6523A requires 5 external transistors. Three N-channel MOSFETs are employed by the PWM convert ers. The AGP and memory linear controllers can each drive a MOSFET or a NPN bipolar as a pass transistor. All these transistors should be selected based upon r gain, saturation voltages, gate supply requirements, and thermal management considerations.
DS(ON)
, current
The equations presented assume linear voltage-current transitions and do not model power losses due to the lower MOSFET’s body diode or the output capacitances associated with either M OSFET. The gate charge losses are dissipated by the contro ller IC (ISL 6523A) and do not contribute to the MOSFETs’ heat rise. Ensure that both MOSFETs are within their maximum junction temperature at high ambient temperature by calculating the temperature rise according to package thermal resistance specifications. A separate heatsink may be necessary depending upon MOSFET power , p ackage type , ambient te mperature a nd air flow.
P
P
The r
UPPER
LOWER
DS(ON)
2
I
r
× V
O
------------------------------------------------------------
2
I
r
× VINV
O
---------------------------------------------------------------------------------=
×
DS ON()
V
IN
DS ON()
V
IN
is different for the two equations above even if
OUT
I
× tSW× F
OVIN
----------------------------------------------------+=
()×
OUT
2
the same device is used for both. This is because the gate drive applied to the upper MOSFET is different than the lower MOSFET. Figure 12 shows the gate drive where the upper MOSFET’s gate-to-source voltage is approximately V
less the input supply. For +5V main power and +12VDC
CC
for the bias, the approximate gate-to-source voltage of Q1 is 7V. The lower gate drive voltage is 12V. A logic-le vel MOSFET is a good choice for Q1 and a logic-level MOSFET can be used for Q2 if it s absolute gate-to-source vo ltage rating exceeds the maximum voltage applie d to V
+12V
ISL6523A
-
+
VCC
UGATE PHASE
LGATE PGND
GND
+5V OR LESS
Q1
Q2
.
CC
NOTE: VGS VCC -5V
CR1
NOTE:
V
V
GS
CC
PWM1 MOSFET Selection and Considerations
In high-current PWM applications, the MOSFET power dissipation, package selection and heatsink are the dominant design factors. The power dissipation includes two main loss components: conduction losses and switching losses. These losses are distributed between the upper and lower MOSFETs according to the duty factor. The conduction losses are the main component of power dissipation for the lower MOSFET s. Only the upper MOSFET has significant switching losses, since the lower device turns on and off into near zero voltage.
13
FIGURE 12. UPPER GATE DRIVE - DIRECT V
CC
DRIVE
Rectifier CR1 is a clamp that catches the negative inductor swing during the dead time between the turn off of the lower MOSFET and the turn on of the upper MOSFET. For best results, the diode must be a surface-mount Schottky type to prevent the parasitic MOSFET body diode from conducting. It is acceptable to omit the diode and let the body diode of the lower MOSFET clamp the negative inductor swing, but one must ensure the PHASE node negative voltage swing does not exceed -3V to -5V peak. The diode's rated reverse
P
ISL6523A
breakdown voltage must be equal or greater to 1.5 times the maximum input voltage.
PWM2 MOSFET and Schottky Selection
The power di ssipation in PWM2 converter is similar to PWM1 except that the power losses of the lower device are dissipated in the Schottky. The equations below describe an approximation of this power loss distribution and assume linear voltage-current switching transitions.
2
I
r
P
P
MOS
SCH
× V
O
------------------------------------------------------------
IOVf× VINV
-------------------------------------------------------------=
×
DS ON()
V
IN
()×
V
IN
OUT
OUT
× tSW× F
I
OVIN
----------------------------------------------------+=
2
Linear Controllers Transistor Selection
The ISL6523A linear controllers are compatible with both NPN bipolar as well as N-cha nne l M OSF ET tran si sto r s. T he main criteria for selection of pass transistors for the linear
regulators is package selection for efficient removal of heat. The power dissipated in a linear regulator is
LINEARIOVINVOUT
()×=
Select a package and heatsink that maintains the junction temperature below the maximum desired temperature with the maximum expected ambient temperature.
When selecting bipolar NPN transistors for use with the linear controllers, insure the current gain at the given operating V
is sufficiently large to provide the desired
CE
output load current when the base is fed with the minimum driver output current.
In order to ensure the strict timing/level requirement of OUT4, an NPN transistor is recomm ended fo r use as a pas s element on this output (Q5). An low gate threshold NMOS could be used, but meeting the requirements would then depend on the VCC bias being sufficiently high to allow control of the MOSFET.
14
ISL6523A
ISL6523A DC-DC Converter Application Circuit
Figure 13 shows an application circuit of a power supply for a microprocessor computer system. The power supply provides the micropro cessor core v olt age (V bus voltage (V
+5V
+12V
+3.3V
GND GND
GND
V
(VTT)
OUT2
+1.2V
R7
10k
VTT
POWER GOOD
(AGP)
V
OUT3
+1.5V
(MCH)
V
OUT4
+1.8V
), the G T L bus voltage (V
OUT2
Q3
HUF76121
L2
2.0µH
+
C7
1000µF
Q4
HUF76107
+
C18
560µF
Q5
2SD1802
+
C21 560µF
C3
1nF
R2
2.2k
CR1
HSM835
+
C15
10µF
PHASE2
OUT1
OUT3
OCSET2
UGATE2
VSEN2
VTTPG
VAUX
DRIVE3
VSEN3
DRIVE4
VSEN4
), the AGP
), and the
L1
1µH
C2
1µF
10
1
2
11
9
U1
ISL6523A
16
18
19
15
14
28
17
VCC
GND
memory controller hu b volt age (V
) from +3.3V , +5VDC,
OUT4
and +12VDC. For detailed information on the circuit, including a Bill-o f-Materials and circui t board des cription, see Application Note AN9925. Also see the Intersil web site at www.intersil.com
+
C1
680µF
C5
23
8
27 26
25
24
22
21
20
7
6 5 4 3
12
13
OCSET1
PGOOD
UGATE1
PHASE1
LGATE1
PGND
VSEN1 FB1
COMP1
VID25
VID0 VID1 VID2 VID3
SS24
SS13
C22
0.1µF
C4
1nF
1.5k
2.2nF
R3
C13
270pF
C16
Q1
HUF76139
Q2
HUF76143
3.32k
R11
43k
C19
0.1µF
R8
R1
10k
C14
22nF
1µF
L3
1.8µH
R5
4.99k
R12
267k
POWER GOOD
+
C8-10
3x1000µF
R10
33
V
(CORE)
OUT1
+1.050V TO 1.825V
C12
0.30µF
R9
12.1k
15
FIGURE 13.
Small Outline Plastic Packages (SOIC)
N
1
ISL6523A
N
INDEX AREA
123
SEATING PLANE
-A­D
e
B
0.25(0.010) C AM BS
M
E
-B-
A
-C-
0.25(0.010) BM M
H
α
µ
A1
0.10(0.004)
L
h x 45
o
OTES:
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch)
0. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact.
M28.3 (JEDEC MS-013-AE ISSUE C)
28 LEAD WIDE BODY SMALL OUTLINE PLASTIC PACKAGE
INCHES MILLIMETERS
SYMBOL
A 0.0926 0.1043 2.35 2.65 -
A1 0.0040 0.0118 0.10 0.30 -
B 0.013 0.0200 0.33 0.51 9 C 0.0091 0.0125 0.23 0.32 ­D 0.6969 0.7125 17.70 18.10 3 E 0.2914 0.2992 7.40 7.60 4
e 0.05 BSC 1.27 BSC -
H 0.394 0.419 10.00 10.65 -
C
h 0.01 0.029 0.25 0.75 5 L 0.016 0.050 0.40 1. 27 6
N28 287
o
α
0
o
8
o
0
o
8
Rev. 0 12/93
NOTESMINMAXMINMAX
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All Intersil U.S. products are manufa ct ured , asse mbled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of In tersil or its subsidi ari es.
For information regarding Intersil Corporation and its products, see www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation 7585 Irvine Center Drive Suite 100 Irvine, CA 92618 TEL: (949) 341-7000 FAX: (949) 341-7123
Intersil Corporation 2401 Palm Bay Rd. Palm Bay, FL 32905 TEL: (321) 724-7000 FAX: (321) 724-7946
16
EUROPE
Intersil Europe Sarl Ave. William Graisse, 3 1006 Lausanne Switzerland TEL: +41 21 6140560 FAX: +41 21 6140579
ASIA
Intersil Corporation Unit 1804 18/F Guangdong Water Building 83 Austin Road TST, Kowloon Hong Kong TEL: +852 2723 6339 FAX: +852 2730 1433
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